TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
1
77 GHz Transceiver Switch
Key Features
•
I/O Compatible with MA4GC6772
•
3 Antenna Ports
•
Receive, Source, and LO Ports
•
2.5 dB RX/TX Insertion Loss Typical
•
40 dB Source/Mixer Isolation Typical
•
25 dB Ant/Ant Isolation Typical
•
Bias Supply: 1.3V@40mA
•
Die Size: 1.70 x 2.16 x 0.1 mm
Primary Applications
•
Automotive Radar
•
Instrumentation
Note: Datasheet is subject to change without notice.
TGS4307
Product Description
The TGS4307 is a 77 GHz switch matrix for
use in automotive radar transceivers. The
switch is designed using TriQuint’s proven
VPIN diode production process.
Three antenna ports may be selected
independently and directed to a source (J5)
or a receive (J4) port. Additionally, the
source port can be directed to the LO port
for use with a downconverting mixer.
Measured Fixtured
Data
Bias: 1.3V @ 40mA
Radar Application Schematic
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
70 71 72 73 74 75 76 77 78 79 80
Frequency (GHz)
Insertion Loss (dB)
Receive Path
Transmit Path
LO Path
-80
-70
-60
-50
-40
-30
-20
-10
0
70 71 72 73 74 75 76 77 78 79 80
Frequency (GHz)
Isolation (dB)
Ant / Ant
Source / Ant
Source / LO
Source / RX
J1
TGS4307
J3
J2
J6
IF
J5
J4
RX Port
Source
Port
LO Port
B1 B3
B2
B4
B5
B4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
2
TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
V+Positive Supply Voltage 2 V 2/
V-Negative Supply Voltage -8 V 2/
I+Positive Supply Current (Quiescent) 80 mA 2/, 3/
PIN Input Continuous Wave Power TBD
PDPower Dissipation 160 mW 2/
TMMounting Temperature (30 Seconds) 320 0C
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Control line B1, B2, B3 maximum current = 20 mA
Control line B4, B5 maximum current = 40 mA
TGS4307
PARAMETER TYPICAL UNITS
Frequency Range 75 - 80 GHz
Bias Supply 1.3V @ 40mA
Insertion Loss, Port J3 to J4 (RX) 2.5 dB
Insertion Loss, Port J1 to J5 (TX) 2.5 dB
Insertion Loss Source to LO, Port J5 to J6 (RX) 1.8 dB
Isolation Source to RX, Port J4 to J5 (RX) >40 dB
Isolation Source to Antenna, Port J1 to J5 (RX) >40 dB
Isolation Antenna to Antenna, Port J1 to J3 (RX,TX) 25 dB
Isolation Source to LO, Port J5 to J6 (TX) 20 dB
Return Loss >8 dB
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
3
Preliminary Measured Data
Bias: 1.3V @ 40mA
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Frequency (GHz)
Insertion Loss (dB)
Receive Path
Transmit Path
LO Path
-80
-70
-60
-50
-40
-30
-20
-10
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Frequency (GHz)
Isolation (dB)
Ant / Ant
Source / Ant
Source / LO
Source / RX
Ant/Ant
Source/LO
Source/RX
Source/Ant
LO Path
Receive Path
Transmit Path
TGS4307
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
4
Preliminary Measured Data
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Frequency (GHz)
Return Loss (dB)
RL @ RX Port
RL @ Antenna Port
Antenna 3 to RX Port
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Frequency (GHz)
Return Loss (dB)
RL @ Antenna Port
RL @ Source Port
Source Port to Antenna 1
TGS4307
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
5
Preliminary Measured Data
Source Port to LO Port
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
65 67 69 71 73 75 77 79 81 83 85 87 89 91
Frequency (GHz)
Return Loss (dB)
RL @ LO Port
RL @ Source Port
TGS4307
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
6
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
1
2
34
5
6
7
8
9
10
11
0
0
0.103
(0.004)
0.341
(0.013)
0.717
(0.028) 1.657
(0.065)
1.760
(0.069)
0.103
(0.004)
0.335
(0.013)
0.775
(0.031)
1.274
(0.050)
1.873
(0.074)
2.038
(0.080)
1.638
(0.064)
1.230
(0.048)
0.880
(0.035)
0.123
(0.005)
2.160
(0.085)
2.058
(0.081)
1.870
(0.074)
1.274
(0.050)
0.463
(0.018)
0.123
(0.005)
Units: millimeters (inches)
Thickness: 0.1016 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pads
Chip size tolerance: +/- 0.05 (0.002)
GND IS BACKSIDE OF MMIC
Bond Pad # 1 (Antenna Port 1)
Bond Pad # 2 (VB1)
Bond Pad # 3 (Antenna Port 2)
Bond Pad # 4 (VB2)
Bond Pad # 5 (VB3)
Bond Pad # 6 (Antenna Port 3)
Bond Pad # 7 (VB5)
Bond Pad # 8 (Source Port)
Bond Pad # 9 (LO Port)
Bond Pad # 10 (VB4)
Bond Pad # 11 (Receiver Port)
0.100 x 0.100 (0.004 x 0.004)
0.140 x 0.100 (0.006 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.140 (0.004 x 0.006)
0.140 x 0.100 (0.006 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.140 x 0.100 (0.006 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.140 (0.004 x 0.006)
0.100 x 0.100 (0.004 x 0.004)
TGS4307
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
7
Assembly Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
B1 B2 B3
B4 B5
Note: Unused Ports should be terminated with 50 Ω.
Substrate: GaAs
εr
=12.9
Thickness=4mil
Note: Ribbon bond is acceptable
(instead of 3 bondwires)
Recommended Interconnect Scheme
Substrate: Alumina
εr
=9.8
Thickness=5mil
External Interface (TFN) Switch MMIC
Microstrip Trace
Width=120mm (50Ω)
3 Bondwires
Gap ~4mil
Diameter=0.7mil
Height< 1mil
5mil
3mil
RF I/O Pad
TFN
TGS4307
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
8
Function Selected Antenna
(B1, B2, or B3)
Unused Antennas
(B1, B2, or B3)
B4 B5
Transmit -5 to 0V +10mA each +20mA 0V
Receive -5 to 0V +10mA each 0V +20mA
Bias State Table
Forward voltage is ~ +1.3V to achieve bias current
Application Schematic
GaAs
MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
J1
TGS4307
J3
J2
J6
IF
J5
J4
RX Port
Source
Port
LO Port
B1 B3
B2
B4
B5
B4
TGS4307
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
9
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 3000C (30 seconds max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Wedge bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 2000C.
TGS4307
