APT106N60B2_LC6 APT106N60B2_LC6 600V 106A 0.035 COOL MOS Power Semiconductors APT106N60B2C6 Super Junction MOSFET T-Max(R) * Ultra Low RDS(ON) TO-264 * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated APT106N60LC6 * Extreme dv/dt Rated D * Dual die (parallel) * Popular T-MAX and TO-264 Packages G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol VDSS ID S All Ratings per die: TC = 25C unless otherwise specified. Parameter APT106N60B2_LC6 UNIT 600 Volts Drain-Source Voltage Continuous Drain Current @ TC = 25C 1 106 68 Continuous Drain Current @ TC = 100C 2 Amps 318 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 20 Volts PD Total Power Dissipation @ TC = 25C 833 Watts TJ,TSTG Operating and Storage Junction Temperature Range -55 - to 150 TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 3 ( Id = 18.6A, Vdd = 50V ) 3.4 EAS Single Pulse Avalanche Energy ( Id = 18.6A, Vdd = 50V ) 2200 C 260 2 18.6 Amps mJ STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 500A) 650 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 4 TYP MAX UNIT Volts 0.035 (VGS = 10V, ID = 53A) Ohms Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 50 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) 500 Gate-Source Leakage Current (VGS = 20V, VDS = 0V) 200 nA 3.5 Volts Gate Threshold Voltage (VDS = VGS, ID = 3.4mA) 2.5 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com A 050-7208 Rev B 6-2014 Symbol APT106N60B2_LC6 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge 5 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr Turn-off Delay Time tf TYP VGS = 0V VDS = 25V f = 1 MHz 8390 VGS = 10V VDD = 300V ID = 106A @ 25C 308 Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 MAX 229 nC 50 160 25 79 ns 277 164 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 106A, RG = 4.3 2995 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID =106A, RG = 4.3 4055 3775 J 4200 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX IS Continuous Source Current (Body Diode) 92 ISM Pulsed Source Current 318 VSD Diode Forward Voltage dv 2 (Body Diode) 4 /dt Peak Diode Recovery /dt dv (VGS = 0V, IS = -106A) 0.9 7 UNIT Amps 1.2 Volts 15 V/ns t rr Reverse Recovery Time (IS = -106A, /dt = 100A/s) Tj = 25C 1400 ns Q rr Reverse Recovery Charge (IS = -106A, di/dt = 100A/s) Tj = 25C 45 C IRRM Peak Recovery Current Tj = 25C 47 Amps di (IS = -106A, di/dt = 100A/s) THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RJC Junction to Case RJA Junction to Ambient WT Package Weight Torque MIN TYP MAX UNIT 0.15 C/W 40 0.22 oz 6.2 g Mounting Torque (TO-264 Package), 4-40 or M3 screw 1 Continuous current limited by package lead temperature. 4 Pulse Test: P 2 Repetitive Rating: Pulse width limited by maximum junction temperature 5 See MIL-STD-750 Method 3471 3 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f . Pulse width tp limited by Tj max. 6 Eon includes diode reverse recovery. 10 in*lbf 1.1 N*m D = 0.9 0.14 0.12 0.7 0.10 0.5 0.08 0.06 Note: P DM ZJC, THERMAL IMPEDANCE (C/W) 7 Maximum 125C diode commutation speed = di/dt 600A/s Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 050-7208 Rev B 6-2014 UNIT pF 7115 INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 106A @ 25C RG = 4.3 Rise Time td(off) MIN 0.3 0.04 t2 t 0.1 0.02 0 t1 SINGLE PULSE 0.05 10-5 10-4 Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 10-2 10-3 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 APT106N60B2_LC6 TYPICAL PERFORMANCE CURVES 225 15V 120 175 7.0V 150 6.5V 125 6.0V 100 75 5.5V 50 5V 25 40 V GS = 10V @ 106A TJ= -55C TJ= 125C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics 100 1.60 VGS = 10V 1.20 TJ= 25C 120 NORMALIZED TO VGS = 20V 0.80 ID, DRAIN CURRENT (A) 0.40 80 60 40 20 0 0 100 150 200 250 ID, DRAIN CURRENT (A) FIGURE 4, RDS(ON) vs Drain Current 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 5, Maximum Drain Current vs Case Temperature 3.00 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.20 0 50 2.50 2.00 1.50 1.00 0.50 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Breakdown Voltage vs Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, On-Resistance vs Temperature 1000 1.20 ID, DRAIN CURRENT (A) 1.10 1.00 0.90 0.80 0.70 0.60 -50 0 50 100 150 TC, CASE TEMPERATURE (C) FIGURE 8, Threshold Voltage vs Temperature 100 10 1ms 100s 10ms 100ms 1 0.1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 9, Maximum Safe Operating Area 050-7208 Rev B 6-2014 RDS(on), DRAIN-TO-SOURCE ON RESISTANCE 60 0 2.00 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 80 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics 0.85 100 20 4.5V 0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 10V ID, DRAIN CURRENT (A) IC, DRAIN CURRENT (A) 200 140 TYPICAL PERFORMANCE CURVES 10,000 1000 Coss 100 Crss 10 100 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 10, Capacitance vs Drain-To-Source Voltage 100 I = 106A D 12 VDS= 120V 10 VDS= 300V 8 VDS=480V 6 4 2 0 0 100 200 300 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 11, Gate Charges vs Gate-To-Source Voltage 400 350 TJ= +150C TJ = =25C 10 td(off) 300 250 V DD R 200 G = 400V = 4.3 T = 125C J L = 100H 150 100 50 1 250 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 12, Source-Drain Diode Forward Voltage V DD R G td(on) 0 8000 = 400V = 4.3 150 100 tr 50 50 100 150 ID (A) FIGURE 13, Delay Times vs Current V DD 7000 tf T = 125C J L = 100H 200 tr, and tf (ns) 200 td(on) and td(off) (ns) IDR, REVERSE DRAIN CURRENT (A) 200 0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss SWITCHING ENERGY (J) C, CAPACITANCE (pF) 20,000 0 APT106N60B2_LC6 14 30,000 R G 200 = 400V = 4.3 Eoff T = 125C J 6000 L = 100H 5000 diode reverse recovery. EON includes Eon 4000 3000 2000 1000 0 0 14000 50 100 150 200 ID (A) FIGURE 14 , Rise and Fall Times vs Current V DD D SWITCHING ENERGY (uJ) T = 125C J L = 100H 10000 050-7208 Rev B 6-2014 = 400V I = 106A 12000 Eoff EON includes diode reverse recovery. 8000 6000 Eon 4000 2000 0 0 10 20 30 40 50 RG, GATE RESISTANCE (Ohms) FIGURE 16, Switching Energy vs Gate Resistance 0 0 50 100 150 200 ID (A) FIGURE 15, Switching Energy vs Current TYPICAL PERFORMANCE CURVES APT106N60B2_LC6 Gate Voltage 10% 90% TJ = 125C td(on) 10% 5% tf Drain Current 90% tr Gate Voltage td(off) TJ = 125C Drain Voltage 10% 5% 0 Drain Current Drain Voltage Switching Energy Switching Energy FIGURE 17, Turn-on Switching Waveforms and Definitions FIGURE 18, Turn-off Switching Waveforms and Definitions APT30DF60 APT60DQ60 IC V DD V CE G D.U.T. Figure 20, Switching Test Test CircuitCircuit FIGURE 19,Inductive Inductive Switching T-MAX(R) (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e3 100% Sn Plated TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drai n 4.50 (.177) Max. 0.40 (.016) 1.016(.040) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drai n Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) Gate Drain Source 050-7208 Rev B 6-2014 Drai n 20.80 (.819) 21.46 (.845) APT106N60B2_LC6 Disclaimer: 050-7208 Rev B 6-2014 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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