2SD2112
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
1. Base
2. Collector
3. Emitter
1232.6 kΩ
(Typ) 160 Ω
(Typ)
1
2
3
ID
2SD2112
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage VCBO 120 V
Collector to emitter voltage VCEO 120 V
Emitter to base voltage VEBO 7V
Collector current IC6A
Collector peak current IC(peak) 12 A
Collector power dissipation PC2W
P
C
*
125
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*16A
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 120 — — V IC = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 120 — — V IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO 7——VI
E
= 50 mA, IC = 0
Collector cutoff current ICBO ——10µAV
CB = 100 V, IE = 0
ICEO ——10 V
CE = 100 V, RBE = ∞
DC current transfer ratio hFE 1000 — 20000 VCE = 3 V, IC = 3 A*1
Collector to emitter saturation VCE(sat)1 — — 1.5 V IC = 3 A, IB = 6 mA*1
voltage VCE(sat)2 — — 3.0 IC = 6 A, IB = 60 mA*1
Base to emitter saturation VBE(sat)1 — — 2.0 V IC = 3 A, IB = 6 mA*1
voltage VBE(sat)2 — — 3.5 IC = 6 A, IB = 60 mA*1
C to E diode forward voltage VD— — 3.0 V ID = 6 A*1
Note: 1. Pulse test.
See switching characteristic curve of 2SD1606.
2SD2112
3
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
20
10
5
2
0.2
0.5
1.0
Collector current IC (A)
0.1
0.05
0.0233010 100 300
Collector to emitter voltage VCE (V)
Ta = 25°C
1 shot pulse
1 µs
PW = 10 ms
1 ms
100 µs
Area of Safe Operation
DC Operation(T
C
= 25°C)
iC(peak)
IC(max)
TC = 25°C
IB = 0
10
8
6
4
2
01
Collector current IC (A)
2
Collector to emitter voltage VCE (V)
354
Typical Output Characteristics
0.5 mA
1.0
3.0
1.5
2.5
2.0
30,000
10,000
300
3,000
1,000
100
30
0.1 0.3
DC current transfer ratio hFE
1.0
Collector current IC (A)
310
T
C
= 75°C
–25°C
25°C
VCE = 3 V
DC Current Transfer Ratio
vs. Collector Current
2SD2112
4
Saturation Voltage
vs. Collector Current
10
3
1.0
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
0.3
0.1
0.03
0.01
0.1 0.3 3
Collector current IC (A)
1.0 10
VBE(sat)
VCE(sat)
200
IC/IB = 200
TC = 25°C
500
10
3
1.0
0.3
0.1
1m 10m 100m 1.0 10 100 1000
TC= 25°C
Thermal resistance θj-c (°C/W)
Transient Thermal Resistance
Time t (s)
2SD2112
5
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examples described herein.
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