MPTE-10C - ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

June, 2002 – Rev. 2 1Publication Order Number:

1N6382/D

1N6382 - 1N6389 Series

(ICTE-10C - ICTE-36C,

MPTE-8C - MPTE-45C)

1500 Watt Peak Power

Mosorb Zener Transient

Voltage Suppressors

Bidirectional*

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high–energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetic axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

Specification Features:

•Working Peak Reverse Voltage Range – 8 V to 45 V

•Peak Power – 1500 Watts @ 1 ms

•ESD Rating of Class 3 (>16 KV) per Human Body Model

•Maximum Clamp Voltage @ Peak Pulse Current

•Low Leakage < 5 A Above 10 V

•Response Time is Typically < 1 ns

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16″ from the case for 10 seconds

POLARITY: Cathode band does not imply polarity

MOUNTING POSITION: Any

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation (Note 1)

@ TL ≤ 25°CPPK 1500 Watts

Steady State Power Dissipation

@ TL ≤ 75°C, Lead Length = 3/8″

Derated above TL = 75°C

PD5.0

Watts

mW/°C

Thermal Resistance, Junction–to–Lead RJL 20 °C/W

Operating and Storage

Temperature Range TJ, Tstg – 65 to

+175 °C

1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C

per Figure 2.

*Please see 1N6373 – 1N6381 (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)

for Unidirectional Devices

AXIAL LEAD

CASE 41A

PLASTIC

L = Assembly Location

MPTE–xxC = ON Device Code

ICTE–xxC = ON Device Code

1N63xx = JEDEC Device Code

YY = Year

WW = Work Week

Device Package Shipping

ORDERING INFORMATION

MPTE–xxC Axial Lead 500 Units/Box

MPTE–xxCRL4 Axial Lead 1500/Tape & Reel

ICTE–xxC* Axial Lead 500 Units/Box

ICTE–xxCRL4 Axial Lead 1500/Tape & Reel

ICTE

–xxC

YYWW

1N63xx Axial Lead 500 Units/Box

1N63xxRL4 Axial Lead 1500/Tape & Reel

MPTE

–xxC

63xx

YYWW

http://onsemi.com

*ICTE–10C Not Available in 500 Units/Box

Bi–Directional TVS

IPP

VRWM

VCVBR

VRWM VC

VBR

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

http://onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

VBR Maximum Temperature Variation of VBR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

VRWM

IR@

Breakdown Voltage VC @ IPP (Note 4) VC (Volts) (Note 4)

JEDEC

Device

RWM

(Note 2)

VRWM VBR (Note 3) (Volts) @ ITVCIPP

VBR

(ON Device)

Marking (Volts) (A) Min Nom Max (mA) (Volts) (A)

= 1 A

= 10 A (mV/°C)

1N6382

(MPTE–8C) 1N6382

MPTE–8C 8.0 25 9.4 – – 1.0 15 100 11.3 11.5 8.0

1N6383

(MPTE–10C) 1N6383

MPTE–10C 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 12

1N6384

(MPTE–12C) 1N6384

MPTE–12C 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 14

1N6385

(MPTE–15C) 1N6385

MPTE–15C 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 18

1N6386

(MPTE–18C) 1N6386

MPTE–18C 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 21

1N6387

(MPTE–22C) 1N6387

MPTE–22C 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 26

1N6388

(MPTE–36C) 1N6388

MPTE–36C 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 50

1N6389

(MPTE–45C) 1N6389

MPTE–45C 45 2.0 52.9 – – 1.0 78.9 19 63.3 70 60

ICTE–10C* ICTE–10C* 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 8.0

ICTE–12C ICTE–12C 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 12

ICTE–15C ICTE–15C 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 14

ICTE–18C ICTE–18C 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 18

ICTE–22C ICTE–22C 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 21

ICTE–36C ICTE–36C 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 26

NOTES:

2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to

or greater than the dc or continuous peak operating voltage level.

3. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.

4. Surge current waveform per Figure 4 and derate per Figures 1 and 2.

*Not Available in the 500 Units/Box.

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

http://onsemi.com

Figure 1. Pulse Rating Curve

100

0 25 50 75 100 125 150 175 200

PEAK PULSE DERATING IN % OF

PEAK POWER OR CURRENT @ T

A= 25 C°

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Pulse Derating Curve

25 50 75 100 125 150 175 200

PD, STEADY STATE POWER DISSIPATION (WATTS)

TL, LEAD TEMPERATURE (°C)

3/8″

100

001 2 3 4

t, TIME (ms)

, VALUE (%)

tr ≤ 10 s

PEAK VALUE - IPP

HALF VALUE - IPP

PULSE WIDTH (tP) IS DEFINED AS

THAT POINT WHERE THE PEAK

CURRENT DECAYS TO 50% OF IPP

1s 10s 100 s 1 ms 10 ms

100

, PULSE WIDTH

PPK, PEAK POWER (kW)

NONREPETITIVE

PULSE WAVEFORM

SHOWN IN FIGURE 5

0.1s

IPP

Figure 3. Steady State Power Derating Figure 4. Pulse Waveform

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

http://onsemi.com

1N6373, ICTE-5, MPTE-5,

through

1N6389, ICTE-45, C, MPTE-45, C

1.5KE6.8CA

through

1.5KE200CA

Figure 5. Dynamic Impedance

1000

500

200

100

1000

500

200

100

0.3 0.5 0.7 1 2 3 5 7 10 20 30

VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

0.3 0.5 0.7 1 2 3 5 7 10 20 30

VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

IT, TEST CURRENT (AMPS)

VBR(MIN)=6.0 to 11.7V

TL=25°C

tP=10s

VBR(NOM)=6.8 to 13V

20V

24V 43V

75V

180V

120V

19V

21.2V 42.4V

Figure 6. Typical Derating Factor for Duty Cycle

DERATING FACTOR

1 ms

10 s

0.7

0.5

0.3

0.05

0.1

0.2

0.01

0.02

0.03

0.07

100 s

0.1 0.2 0.5 2 5 10 501 20 100

D, DUTY CYCLE (%)

PULSE WIDTH

10 ms

TL=25°C

tP=10s

IT, TEST CURRENT (AMPS)

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

http://onsemi.com

APPLICATION NOTES

RESPONSE TIME

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. In this situation, there is a time delay associated

with the capacitance of the device and an overshoot

condition associated with the inductance of the device and

the inductance of the connection method. The capacitance

effect is of minor importance in the parallel protection

scheme because it only produces a time delay in the

transition from the operating voltage to the clamp voltage as

shown in Figure 7.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This inductive

effect produces an overshoot in the voltage across the

equipment or component being protected as shown in

Figure 8. Minimizing this overshoot is very important in the

application, since the main purpose for adding a transient

suppressor is to clamp voltage spikes. These devices have

excellent response time, typically in the picosecond range

and negligible inductance. However, external inductive

effects could produce unacceptable overshoot. Proper

circuit layout, minimum lead lengths and placing the

suppressor device as close as possible to the equipment or

components to be protected will minimize this overshoot.

Some input impedance represented by Zin is essential to

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25°C. If the duty cycle increases,

the peak power must be reduced as indicated by the curves

of Figure 6. Average power must be derated as the lead or

ambient temperature rises above 25°C. The average power

derating curve normally given on data sheets may be

normalized and used for this purpose.

At first glance the derating curves of Figure 6 appear to b e

in error as the 10 ms pulse has a higher derating factor than

the 10 s pulse. However, when the derating factor for a

given pulse of Figure 6 is multiplied by the peak power value

of Figure 1 for the same pulse, the results follow the

expected trend.

TYPICAL PROTECTION CIRCUIT

Vin

Vin (TRANSIENT)

Zin

LOAD

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

Figure 7. Figure 8.

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

http://onsemi.com

OUTLINE DIMENSIONS

1500 Watt Peak Power Mosorb

Transient Voltage Suppressors – Axial Leaded

MOSORB

CASE 41A–04

ISSUE D

DIM

MIN MAX MIN MAX

MILLIMETERS

0.335 0.374 8.50 9.50

INCHES

B0.189 0.209 4.80 5.30

D0.038 0.042 0.96 1.06

K1.000 --- 25.40 ---

P--- 0.050 --- 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD FINISH AND DIAMETER UNCONTROLLED

IN DIMENSION P.

4. 041A-01 THRU 041A-03 OBSOLETE, NEW

STANDARD 041A-04.

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

http://onsemi.com

Notes

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

http://onsemi.com

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make

changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

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SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

1N6382/D

Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.

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