weber MLE O i H8SS4Se CO085H 8 i Data Sheet No. PD-9.320F INTERNATIONAL RECTIFIER 7-37-2( INTERNATIONAL RECTIFIER | [TaR HEXFET TRANSISTORS IRF9530 0 IRF9531 : P-Channel! IRF9OS532 8 IRF9S533 TO-220AB Plastic Package = P-Channel Versatility The HEXFET technology is the key to International Rectifiers a i advanced line of power MOSFET transistors. The efficient geometry = rom a cnastic Package and unique processing of the HEXFET design achieve very low on- = Low Drive Cuerent state resistance combined with high transconductance and extreme device ruggedness. = Ease of Paralileling = Excellent Temperature Stability The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of paralleling, and excellent Product Summary temperature stability. The P-Channel IRF9530 device is an approximate Vv R electrical complement to the N-Channel IRF520 HEXFET. Part Number DS DS(on) Ip | . IRF9530 -100V 0.309 -12A P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit IRF9531 ~60V 0.302 -12A simplification. Thay are also very useful in drive stages because of IRF9532 -100V 0.402 -10A the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode IRF9533 -60V 0.402 -10A converters, control circuit and pulse amplifiers. 4041 TERM 4 CASE STYLE AND DIMENSIONS servant Hr oeemetsho| TERM T6210 103) | 3 79 (0.1495 L- 132 (0.052) 4 | 0 1397 122(0 048) = 648 (0 255) 10.54 (0.415) . | 625 (02451 TERM 3 - SOURCE TERM Z -ORAIN MAX. 1509 (0 5941 14 84 (05841 TERM 1 - GATE WW 45) Mi TT 5 (0.45) MIN 1570 a0) _ $320 170) 1 15.09 (0.694) tr rau] MAX 396 (0 156) 229 (0090) - . 385 (0 140) 533 (0.2t0) 13.97 (0550) Sag sar 1347 (0530) x) f* J SECTION X-X 51 (0.020) 47018) Cc] ao F | | 0939 (0.037) 140 (2 088) a 0 686 (0.0271 115 {0 045} 289 (0 144) 764 (0 104} Case Style TO-220AB Dimensions in Millimeters and (Inches) C-33711 D 5 4855452 0008589 QO _ IRF9530, IRF9531, IRF9532, IRF9533 Devices T-39-21 wate t INTERNATIONAL RECTIFIER Absolute Maximum Ratings Parameter IRF9530 IRF9531 IRF9532 (RF9533 Units Vos Drain - Source Voltage -100 -60 -100 -60 Vv VoGR Drain - Gate Voitage (Rag = 20 kt} O -100 -60 -100 -60 Vv Ip @Tc = 26C Continuous Drain Current -12 12 -10 710 A Ip @ Tg = 100C Continuous Drain Current 75 -7.5 -6.5 6.5 A IDM Pulsed Drain Current @ -48 -48 -40 -40 A Ves Gate - Source Voltage 20 v Pp @Tg = 25C Max. Power Dissipation 76 {See Fig. 14) WwW Linear Derating Factor 0.6 {See Fig. 14) wik@ IL Inductive Current, Clamped (See Fig. 15 and 16)L = 100nH A -48 { -48 i -40 I -40 Tig Storage Fomperature Range . 88 to 160 c Lead Tamperature 300 (0.063 in. (1.6mm) from case far 10s} C Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min, | Typ. | Max. Units Test Conditions BVpsg_Orain - Source Breakdown Voltage IRF9530 | | _ _ _ IRF9532 100 v Ves = OV IRF9531 _ inzo833 | ~ = - v Ip = -250xA Vasith) Gate Threshald Voltage ALL -2.0 _ -4.0 Vv Vos = Ves: Ip = -250nA Iggg _ Gate-Source Leakage Forward ALL _ =__|_-500 nA Vas = -20V lggg _ Gate-Source Leakage Reverse ALL = _ 500 nA Vas = 20V Ipsg Zero Gate Voltage Drain Current ALL =~ _ -250 BA Vpg = Max. Rating, Vgg = OV - {-1000 BA Vpg = Max. Rating x 0.8, Vgg = OV, Te = 125C IDton) On-State Drain Current @ IRF9530 {49 _ _ A IRFO5S1 Vos? Ipton) 7 Veg = -10V 1RFOS32 DS ? Dion) * DS(onj max. GS inrosaz | 0 | ~ | A Roston) Static Drain-Source On-State IRF9530 _ Resistance @) IRF9S31 0.26) 0.30} 2 Vee = A0V, 1p = -6.5A IRF9532 1 _ jos0} 040] a ase , IRF9533 . . . Sts Forward Transconductance @ ALL 2.0 | 3.8 _ st) Vos > 'ptoni * Boston) max.: 'p = 8-5A Ciss Input Capacitance ALL _ 500 | 700 pF Vag = OV, Vpg = -25V, f = 1.0 MHz Coss _ Output Capacitance ALL _ 300 | 450 pF See Fig. 10 . Crss Reverse Transfer Capacitance ACL _ 100 | 200 pF . taion) Turn-On Delay Time ALL _ 30 60 ns Vop = 0.5 BVpgg Ip = ~6.5A, 2, = SOR tr Rise Time ALL - 70 140 as See Fig. 17 tafoff) _ Turn-Off Delay Time ALL. _ 70 140 ns (MOSFET switching times are essentially ty Fall Time ALL _ 70 140 ns independent of operating temperature.) Qg Total Gate Charge ALL _ 25 45 nc Veg = 7-1 5V, Ip = -15A.Vog = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially independent of operating temperature.) Qgs Gate-Source Charge ALL - 13 - nc Qga Gate-Draln {"Miller} Charge ALL - 12 - nc Lp internal Drain Inductance - 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbal showing the to center of die. interna! device ALL inductances. = 4.5 - au Measured from the drain lead, 6mm (0.25 in.) fram package to center of die. Ls Internal Source Inductance ALL - 7.5 - nH Measured from the source lead, 6mm . (0.25 in.) from. . Package to source o bonding pad, -. Thermal Resistance - Ringe Junction-to-Case ALL | 1.67 | Kw@ , Rincs _Case-to-Sink ALL - 4.0 - KW@ Mounting surface flat, smooth, and greased. RindA _Junction-to-Ambient ALL = - 80 KWw Typical socket mount : C-338Tone ete * LE D i 4455452 0008590 & IRF9530, IRF9531, IRF9532, IRF9533 Devices INTERNATIONAL RECTIFIER Source-Drain Diode Ratings and Characteristics T-39-21 Is Continuous Source Current IRF9530 _ _ 12 A Modified MOSFET symbol (Body Diode) IRF9531 showing the integral - IRF9532 reverse P-N junction rectifier. inposaa} ~ | ~ | tO] A - ism Pulse Source Current IRF9530 _ _ . (Body Diode) @ IRF9531 48] A , IRF9532 imposa3{ ~ {| | 404 A Vgp __ Diode Forward Voltage @ IRF9530 _ _ Tn = 25 =e = IRF9531 -6.3 Vv Cc = 25C, Ig 12A, Vag = OV. IRF9532 Tr = 25 = = IRF9533 ~ -6.0 v C= 25C, Ig 10A, Vag = OV tr Reverse Recovery Time ALL ~ 300 - ns Ty = 150C, Ip = -12A, dip/dt = 100 A/us Orr Reverse Recovered Charge ALL - 1.8 Xe Ty = 150C, Ip = ~12A, dip/dt = 100 A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. @Ty = 25C to 150C. @Pulse Test: Pulse width < 300g, Duty Cycle < 2%. KW = CIW WIK = WIP Ip, ORAIN CURRENT (AMPERES) a -10 -20 -30 40 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS} ~60 Fig. 1 Typical Output Characteristics Ip, ORAIN CURRENT {AMPERES) <1 -2 Vog, ORAIN-TO-SOURCE VOLTAGE {VOLTS} -3 4 Fig. 3 Typical Saturation Characteristics C-339 Repetitive Rating: Pulse width limited by max, junction temperature. Ip, DRAIN CURRENT (AMPERES) See Transient Thermal Impedance Curve (Fig. 5). Ip, DRAIN CURRENT (AMPERES) AS 0.2 Al Bs TEST 1 t Vos > 'pfon) x Fios(on) max. 2 4 6 38 Veg, GATE-TO-SOURCE VOLTAGE (VOLTS) -10 Fig. 2 Typical Transfer Characteristics -10 AREA IS LIMITED BY 10 Ty = 150C MAX, . Rihic = 1.67 KW PULSE 2 5 -10 -20 0 -100 -200 -500 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) . Fig. 4 Maximum Safe Operating AreaLLE D 52 g00a541 4 . IRF9530, IRF9531, IRF9532, IRF9533 Device 1239-91 INTERNATIONAL RECTIFIER - a z 2 <= ce FE to - 35 : Ba 0s a By h az 02 u8 zs Ot +t) >] . 3 = a-_ t7 -_ 2" SH RAL IG 1. OUTY FACTOR, O= 4 en THERMAL IMPEDANCE) OUT! Dea 5 002 2. PER UNIT BASE = Ripyg = 1.67 DEG. CW. $ 3. Tym - Te =Pom 2thucltl. . 0.01 10-5 2 5 10-4 2 10-3 2 10-2 2 5 10-1 2 5 10 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal !mpedance, Junction-to-Case Vs. Pulse Duration ~100 ye Tye Ty = 12590 fs: TRANSCONDUCTANCE (SIEMENS) (pa, REVERSE DRAIN CURRENT (AMPERES) Vos> 'Dfon) xf max. -05 at PULSE TEST 7 02 -O.t - . a 4 8 12 16 -20 0 -2 4 - -8 -10 . Ip, ORAIN CURRENT (AMPERES) Vp, SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 1,15 = a (NORMALIZED) I to a DRAIN-TO-SOURCE ON RESISTANCE Ros(on)- 0.85 BVpss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 075 f > -40 0 40 80 120 160 40 0 40 80 120 : Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Ty, JUNCTION TEMPERATURE (C) , Fig. 9 Normalized On-Resistance Vs. Temperature C-340ales TF LLE DO 5 4yassus2 gogasie2 oa IRF9530, IRF9531, IRF9532, IRF9533 Devices INTERNATIONAL RECTIFIER 1000 Ves= f=1MHz Cisg = Cgg + Egy, Cds SHORTED 800 Crs = Cog - Cys Cod Coss = Cas + Tes * Cod 600 =Cygt Cog 400 C, CAPACITANCE (pF) 200 0 -10 -20 -30 ~40 -50 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 1.0 08 0.6 04 Ip, DRAIN CURRENT (AMPERES) 02 Ros(on} DRAIN-TOSOURCE ON RESISTANCE (OHMS) Ris{on) MEASUREO WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL} Q -10 -20 30 -40 60 Ip, ORAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. a \ 70 N 50 N \ 40 N 40 Pp, POWER DISSIPATION (WATTS) 20 Nd ; N N 0 20 40 60 80 100 120 140 Te, CASE TEMPERATURE (C) Fig. 14 Power Vs, Temperature Derating Curve C-341 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) . 4 o N Ip=-I5A FOR TEST CIRCUIT SEE FIGURE 18 Vos = - 80V, IRF930, 9532 Vos = -20V tot Vos =-50V ] | 1 | -20 0 12.0 ~4.8 Q 25 8 50 16 24 Og, TOTAL GATE CHARGE {nC} 11 Typical Gate Charge Vs. Gate-to-Source Voltage IRF932, 9533 18 32 40 100 125 150 Tg, CASE TEMPERATURE (2} | T-39-21 . 13 Maximum Drain Currant Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK IL IL Vop =O5BVoss Ec =0.75 BVpss Fig. 15 ~ Clamped Inductive Test Circuit Fig. 16 Clamped Inductive Waveformsselene TA BLE D i 4855452 0008593 1 i IRF9530, IRF9531, IRF9532, IRF9533 Devices T-39-21 INTERNATIONAL RECTIFIER ly os i SAME TYPE 12 BATTERY VARY tp TO CBTAIN REQUIRED PEAK I *Yos Veg = -10Vp ety Ig 'p t CURRENT CURRENT ~ SAMPLING SAMPLING RESISTOR RESISTOR Fig. 17 Switching Time Test Circuit Fig. 18 Gate Charge Test Circuit 4012 19'0 a1 e . ta n = ut 2 108 < = 3 ua 8 = =z wi = 16 = & 104 10 10? i 0.0001 . 50 70 90 110 140 180 0 7a 90 110 130 150 TEMPERATURE (C) TEMPERATURE (C) *Eig. 19 Typical Time to Accunulated 1% Failure *Fig. 20 Typical High Temperature Reverse Bias (HTRB) Failure Rate *The data shown Is correct as of April 15, 1987. This information is updated on a quarterly basis; for the latest reliability data, please contact your local IR field office. C-342