4-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
JANSR2N7438 UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -100 V
Drain to Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID7A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID4A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 21 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT25 W
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT10 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS 21 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS7A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 21 A
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300
1.0
oC
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V -100 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS,
ID = 1mA TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V
Zero Gate Voltage Drain Current IDSS VDS = -80V,
VGS = 0V TC = 25oC--25µA
TC = 125oC - - 250 µA
Gate to Source Leakage Current IGSS VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage VDS(ON) VGS = -12V, ID = 7A - - -2.31 V
Drain to Source On Resistance rDS(ON)12 ID = 4A,
VGS = -12V TC = 25oC - 0.230 0.300 Ω
TC = 125oC - - 0.492 Ω
Turn-On Delay Time td(ON) VDD = -50V, ID = 7A,
RL = 7.14Ω, VGS = -12V,
RGS = 7.5Ω
- - 30 ns
Rise Time tr- - 50 ns
Turn-Off Delay Time td(OFF) - - 50 ns
Fall Time tf- - 50 ns
Total Gate Charge (Not on slash sheet) Qg(TOT) VGS = 0V to -20V VDD = -50V,
ID = 7A - - 60 nC
Gate Charge at 12V Qg(12) VGS = 0V to -12V - 36 40 nC
Threshold Gate Charge (Not on slash sheet) Qg(TH) VGS = 0V to -2V - - 2.3 nC
Gate Charge Source Qgs - 6.3 7.3 nC
Gate Charge Drain Qgd -1619nC
Thermal Resistance Junction to Case RθJC --5
oC/W
Thermal Resistance Junction to Ambient RθJA - - 175 oC/W
JANSR2N7438