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®
FN6057
ISL74422BRH
Radiation Hardened, 9A, Non-Inverting
Power MOSFET Driver
The radiation harde ned ISL74422BRH is a non-inverting,
monolithic high-speed MOSFET driver designed to convert a
5V CMOS logic input signal into a high current output at
voltages up to 18V. Its fast rise/fall times and high current
output allow very quick control of even the largest power
MOSFETs in high frequency applications.
The input of the ISL74422BRH ca n be directly driven by our
IS-1825ASRH and IS-1845ASRH PWM devices. The 9A
high current output minimizes power losses in MOSFETs by
rapidly charging and discharging large gate capacitances. A
supply UVLO (Under Voltage Lock Out) circuit insures
predictable turn-on and turn-off of the dr iver.
Constructed with the Intersil dielectrically isolated Rad-Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to single event latch-up and have been specifically
designed to provide highly relia ble performance in harsh
radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-03248. A “hot-link” is provided
on our website for downloading.
Pinout ISL74422BRHF (FLATPACK CDFP4-F16)
TOP VIEW
NOTES:
1. Pin 3 provides the supply voltage for the control logic. It is not
internally connected to pins 15 and 16 for noise immunity
purposes, but it must be connected externally.
2. Pin 5 is the control logic return. It is not internally connected to
pins 8 and 9 for noise immunity purposes, but it must be
connected externally.
3. Pins 8 and 9 must be connected to GND.
4. Pins 12 and 13 must be externally connected.
5. Pins 15 and 16 must be connected to VS.
Features
• QML Qualified per MIL-PRF-38535 Requireme nts
• Electrically Screened to DSCC SMD # 5962-03248
• Radiation Environment
- Total Dose (Max) . . . . . . . . . . . . . . . . . . . . 300krad(SI)
- Latch-Up Immune
•I
PEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A (Min)
•T
FALL (CL = 10nF). . . . . . . . . . . . . . . . . . . . .135ns (Max)
•T
RISE (CL = 10nF) . . . . . . . . . . . . . . . . . . . . .135ns (Max)
• Prop Delay High-Low (CL = 10nF). . . . . . . . .175ns (Max)
• Prop Delay Low-High (CL = 10nF). . . . . . . . . 175ns (Max)
• Rising UVLO Threshold . . . . . . . . . . . . . . . . . . 7.5V (Max)
• Falling UVLO Threshold. . . . . . . . . . . . . . . . . . .6.0V (Min)
• UVLO Hysteresis . . . . . . . . . . . . . . . . . . . . . . . .0.3V (Min)
• Wide Supply Voltage Range . . . . . . . . . . . . . . . 8V to 18V
• Low Stand-by Current Consumption
- Input Low . . . . . . . . . . . . . . . . . . . . . . . . . .2.1mA (Max)
- Input High . . . . . . . . . . . . . . . . . . . . . . . . . .2.7mA (Max)
Applications
• Switching Power Supplies
• DC/DC Converters
• Motor Controllers
NC
NC
VS (IB)
VIN
GND (IB)
NC
NC
GND (OB)
2
3
4
5
6
7
8
116
15
14
13
12
11
10
9
VS (OB)
VS (OB)
NC
+VOUT
-VOUT
NC
NC
GND (OB)
Ordering Information
ORDERING NUMBER INTERNAL
MKT. NUMBER TEMP.
RANGE (oC)
5962F0324801VXC ISL74422BRHVF -55 to 125
5962F0324801QXC ISL74422BRHQF -55 to 125
ISL74422BRHF/PROTO ISL74422BRHF/PROTO -55 to 125
Data Sheet October 2003
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is grant ed by impl icati on or ot herwise under any pate nt or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4191µm x 4826µm (165 mils x 190 mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
40
Metallization Mask Layout ISL74422BRH
(3) VS (IB) (15, 16) VS (OB)
(13) +VOUT
(12) -VOUT
(8, 9) GND (OB)(5) GND (IB)
(4) VIN
ISL74422BRH
