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Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice. REV:A
QW-G7083
kV
A
W
5
90
ESD
IPP
PPP
°C
-55 to +150
-55 to +125
TJ
Operating temperature range
Peak pulse current ( tp = 8/20us)
Peak pulse power ( tp = 8/20us)
Parameter Symbol Value Unit
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Storage temperature range TSTG
±15
°C
V
5
VRWM
Reverse stand-off voltage
Parameter Conditions Symbol Min Typ
Max
Unit
Leakage current
Clamping voltage
IPP = 1A, TP = 8/20us,
I/O Pin to GND VCV
uA
IPP = 5A, TP = 8/20us,
I/O Pin to GND VCV
VRWM = 5V IR0.1
IT = 1 mA VBR
Breakdown voltage 6 V
9
Electrical Characteristics (at TA=25°C unless otherwise noted)
Maximum Rating (at TA=25°C unless otherwise noted)
12
18
VF
Forward voltage V
1.2
Junction capacitance VR = 0V, f = 1MHZ
I/O Pin to GND CjpF
0.5 0.7
15
SMD ESD Protection Diode