APT11058B2FLL APT11058LFLL 1100V 20A 0.580 POWER MOS 7 R FREDFET (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID TO-264 * Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol T-MAXTM D G S All Ratings: TC = 25C unless otherwise specified. Parameter APT11058B2FLL_LFLL UNIT 1100 Volts Drain-Source Voltage 20 Continuous Drain Current @ TC = 25C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 568 Watts Linear Derating Factor 4.55 W/C PD TJ,TSTG 1 80 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 C 300 Amps 20 (Repetitive and Non-Repetitive) 1 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1100 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 10A) TYP MAX UNIT Volts 0.580 Ohms Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 4-2004 Characteristic / Test Conditions 050-7181 Rev A Symbol APT11058B2FLL_LFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 550V tf ID = 20A @ 25C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 700 VDD = 733V, VGS = 15V 210 ID = 20A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 nC 12 RG = 0.6 Eon UNIT pF 120 160 20 105 16 8 40 ID = 20A @ 25C Turn-off Delay Time MAX 4135 680 VDD = 550V Rise Time td(off) TYP VGS = 10V Qgs tr MIN J 1450 VDD = 733V VGS = 15V ID = 20A, RG = 5 270 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP MAX 20 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 80 Diode Forward Voltage 2 (VGS = 0V, IS = -20A) 1.3 Volts 18 V/ns Peak Diode Recovery dt UNIT dv/ dt 5 t rr Reverse Recovery Time (IS = -20A, di/dt = 100A/s) Tj = 25C 340 Tj = 125C 640 Q rr Reverse Recovery Charge (IS = -20A, di/dt = 100A/s) Tj = 25C 1.78 Tj = 125C 4.47 IRRM Peak Recovery Current (IS = -20A, di/dt = 100A/s) Tj = 25C 11.4 Tj = 125C 16.4 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.22 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.5 Note: 0.10 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7181 Rev A 4-2004 0.25 0.15 0.3 0.05 0 SINGLE PULSE 0.1 0.05 10-5 10-4 C/W 4 Starting Tj = +25C, L = 12.50mH, RG = 25, Peak IL = 20A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID20A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 UNIT t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 40 RC MODEL 0.0893 Power (watts) 0.0842 0.0485 0.0102F 0.106F 0.980F ID, DRAIN CURRENT (AMPERES) Junction temp. (C) Case temperature. (C) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 TJ = -55C 30 TJ = +25C 20 TJ = +125C 10 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 20 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 14 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 20 6V 15 10 5.5V 5 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 NORMALIZED TO V = 10V @ 10A GS 1.30 1.20 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 3 I D V 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 10A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 4-2004 ID, DRAIN CURRENT (AMPERES) 16 0 -50 6.5V 30 1.15 18 2.5 35 7V 050-7181 Rev A 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 50 VGS =15,10 & 7.5V 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 60 APT11058B2FLL_LFLL 45 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10,000 100S 10 5 1mS 1 10mS C, CAPACITANCE (pF) Ciss 1 10 100 1100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I D = 20A VDS= 220V 12 VDS= 550V 8 VDS= 880V 4 0 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE td(off) V DD R G = 5 J L = 100H 40 TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE tf 40 V DD R G 30 = 733V = 5 T = 125C J L = 100H tr 10 td(on) 0 5 0 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G 10 15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5 10 2500 = 733V T = 125C J L = 100H E ON includes diode reverse recovery. 1500 Eon 1000 500 Eoff 0 0 = 5 SWITCHING ENERGY (J) SWITCHING ENERGY (J) TJ =+150C 20 20 4-2004 100 50 = 733V T = 125C 60 0 200 60 tr and tf (ns) td(on) and td(off) (ns) 80 2000 Crss 100 70 100 2500 Coss 10 120 0 1,000 TC =+25C TJ =+150C SINGLE PULSE .1 050-7181 Rev A APT11058B2FLL_LFLL 20,000 OPERATION HERE LIMITED BY RDS (ON) IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 80 5 10 15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 2000 Eon 1500 Eoff 1000 V DD I D = 733V = 20A T = 125C 500 J L = 100H EON includes 0 diode reverse recovery. 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT11058B2FLL_LFLL 90% 10% Gate Voltage Gate Voltage T 125C J TJ125C td(off) td(on) Drain Voltage 90% tf 90% tr Drain Current 5% 10% 5% 10% 0 Drain Voltage Switching Energy Drain Current Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF120 IC V DD V CE G D.U.T. Figure 20, Inductive Switching Test Circuit T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain Source 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 4-2004 4.50 (.177) Max. 25.48 (1.003) 26.49 (1.043) 050-7181 Rev A Drain Drain 20.80 (.819) 21.46 (.845)