BUV21G - ON Semiconductor - Datasheet.Live

February, 2006 − Rev. 10 1Publication Order Number:

BUV21/D

BUV21

SWITCHMODEt Series

NPN Silicon Power

Transistor

This device is designed for high speed, high current, high power

applications.

Features

•High DC Current Gain:

hFE min = 20 at IC = 12 A

•Low VCE(sat), VCE(sat)

max = 0.6 V at IC = 8 A

•Very Fast Switching Times:

TF max = 0.4 ms at IC = 25 A

•Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO(SUS) 200 Vdc

Collector−Base Voltage VCBO 250 Vdc

Emitter−Base Voltage VEBO 7 Vdc

Collector−Emitter Voltage (VBE = −1.5 V) VCEX 250 Vdc

Collector−Emitter Voltage (RBE = 100 W)VCER 240 Vdc

Collector−Current − Continuous

− Peak (PW v 10 ms) IC

ICM 40

50 Adc

Apk

Base−Current Continuous IB8 Adc

Total Device Dissipation @ TC = 25_CPD250 W

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to 200 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case qJC 0.7 _C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

40 AMPERES

NPN SILICON POWER

METAL TRANSISTOR

200 VOLTS − 250 WATTS

http://onsemi.com

MARKING DIAGRAM

Device Package Shipping

ORDERING INFORMATION

BUV21 TO−204 100 Units / Tray

BUV21G TO−204

(Pb−Free) 100 Units / Tray

BUV21G

AYWW

MEX

TO−204AE (TO−3)

CASE 197A

BUV21 = Device Code

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

BUV21

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

200

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current at Reverse Bias:

(VCE = 250 V, VBE = −1.5 V)(TC = 25_C unless otherwise noted)

(VCE = 250 V, VBE = −1.5 V, TC = 125_C)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEX

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

3.0

12.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Cutoff Current

(VCE = 160 V)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEO

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

3.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Reverse Voltage

(IE = 50 mA)

ÎÎÎÎÎ

VEBO

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Cutoff Current

(VEB = 5 V)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

IEBO

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with base forward biased

(VCE = 20 V, t = 1 s)

(VCE = 140 V, t = 1 s)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

IS/b

ÎÎÎ

0.15

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 12 A, VCE = 2 V)

(IC = 25 A, VCE = 4 V)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

hFE

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 12 A, IB = 1.2 A)

(IC = 25 A, IB = 3 A)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

0.6

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 25 A, IB = 3 A)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product

(VCE = 15 V, IC = 2 A, f = 4 MHz)

ÎÎÎÎÎ

ÎÎÎ

8.0

ÎÎÎÎ

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS (Resistive Load)

ÎÎÎÎÎÎÎÎÎ

Turn-on Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 25 A, IB1 = IB2 = 3 A,

VCC = 100 V, RC = 4 W)

ÎÎÎÎÎ

ton

ÎÎÎ

ÎÎÎÎ

1.0

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

1.8

ÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

0.4

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Figure 1. Power Derating

1.0

TC, TEMPERATURE (°C)

40 80 160 200

0.4

0.8

0.6

0.2

120

DERATING FACTOR

BUV21

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IC, COLLECTOR CURRENT (A)

Figure 2. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

10 200

0.1

100

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25_C, TJ(pk) is

variable depending on power level. Second breakdown

limitations do not derate the same as thermal limitations.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

Figure 3. “On” Voltages Figure 4. DC Current Gain

100

IC, COLLECTOR CURRENT (A)

110

VCE = 5 V

Figure 5. Resistive Switching Performance

3.0

0 5 10 15 25

VCE = 100 V

IC/IB1 = 8

IB1 = IB2

t, TIME (s)μ

2.0

1.0

0.4

0.3

0.2

ton

2.0

IC, COLLECTOR CURRENT (A)

110

1.6

IC/IB = 8

0.8

1.2

0.4

Figure 6. Switching Times Test Circuit

V, VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

VBE

VCE

VCC

IB2

IB1 RB

RC − RB: Non inductive resistances

VCC = 100 V

RC=4 W

RB= 2.2 W

10,000 mF

BUV21

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PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 197A−05

ISSUE K

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T− SEATING

PLANE

2 PL

0.30 (0.012) Y M

0.25 (0.010) T

−Q−

−Y−

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BUV21/D

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