2N3476~2N3581 Numerical Index gle MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS = ory = = = &| ce | REPLACE- | PAGE Po JE] Ts | Vee | Woe | = fre @ Ic Veesan @ Ic e| ft. le WE 1215 | ment | numper| USE & 5 2 Sg) |B] Tel =a @ 25C | S| C | (volts) | (volts) | = | (min) (max) 3S} (volts) 3 3 5|3 2N3476 S| N LPA 150W{ Cf 150} 150 150 O} 700) LOK 4.0A 3.5 9.0A1 100 E 4.0K] E 2N3477 S| N LPA 150W] C| 150] 200 200 O| 700) 1OK 4.0A 3.5 9.0A|{ 100 E 4.0K] E 2N3478 Ss} N RFA O.2W} A} 200 30 45 0 25) 150 2,0M 25 E 750M] T 2N3479 thru Unijunction Transistors, see Table on Page 1-174 2N3484 2N3485 | S| P 8-169 | HSS| 2.0W|] C] 200|/ 60 40 | O} 40] 120) 0.15A 0.4} O.15A 200M| T 2N3485A| S| P 8-169 ASS 2.0W!) GC} 200 60 60 0 40) 120) 0.154 0.4) 0.154 200M) T 2N3486 | S} P 8-169 | HSS} 2.0W] C}] 200} 60 40 | Q} 100] 300] 0.15A 0.4] 0,15A 200M; T 2N3486A| S| P 8-169 | HSS} 2.0W] C|] 200] 60 60 | O| 100; 300} 0.15A 0.47 0.154 200M; T 2N3487 S| N 7-169 LPA 115W] C] 200 80 60 0 20 60 3.0A 0.3 1.0A 20 E 10M} T 2N3488 | S| N 7-169 | LPA] 115w] C] 200] 100 80 | O} 20} 60} 3.0A 0.3) 1.0A] 20 | E 10M} T 2N3489 S| N 7-169 LPA 115W} C| 200; 120 100 0 15 45 3.0A 0.3 1.0A 20 E 10M] T 2N3490 S| N 7-169 LPA 115W} C{ 200 80 60 a 40] 120 5.0A 0.3 1.0A 40 E 10M] T 2N3491 | S| N 7-169 | LPA| 1L15W] C] 200} 100 80 | OF 40} 120] 5.0A 0.3] 1.0A} 40 | E 10M] T 2N3492 S| N 7-169 LPA 115W] C} 200] 120 100 0 30 90 5.0A 0.3 1.0A 40 E 10M] T 2N3493 8| N 8-228 HSS| 0.15W} AJ] 200 12 8.0 0 40] 120 0.5M 0.15 10* 400M; T 2N3494 | S| P 8-230 ) VID} 06.6W}) A} 200) 80 80 | OF 35 0.14 0.3 1OM} 40 ] E}] 200M] T 2N3495 | S] P 8-230 | VID} 0.6W] A] 200) 120 | 120 | O| 35 O.1M] 0.35 10M} 40 | EJ} 150M; T 2N3496 | S| P 8-230 | VID}; O.4wW] A} 200] 80 80 | Oo} 35 0.1A 0.3 1oM{ 40 ; E|} 200M] T 2N3497 | S| P 8-230 | VID} O.4w{ A} 200] 120 | 120 | Of 35 O.1M] 0.35 10M; 40 | E|] 150M} T 2N3498 S| N 8-232 VID 1.0w] A] 200] 100 100 Q 40} 120] 0.15A 0.2 LOM 50 E 150M] T 2N3499 { S| N 8-232 | VID} L.0w! Al 200) 106 | 100 | GO} 100] 300) 0.154 0.2 LOM) 75 ) E} 150M) T 2N3500 S|_N 8-232 VID 1.0W] A} 200} 150 150 0 40{ 120] 0.15A 0.2 10M 50 E 150M] T 2N3501 | S| N 8-232 | VID} 1.0W}] A} 200] 150 | 150 | O| 100] 300] 0.15A 0.2 LOM] 75 | Ef 150M] T 2N3502 | S| Pj 2N2905 | 8-169 | HSS| 0.7W] A] 200) 45 45 | O|] 115] 300 50M} 0.25 50M} 135 ] E| 200M} T 2N3503 | S| P| 2N2905A| 8-169 | HSS} 0.7W{ A] 200] 60 60 | O}] 115] 300 50M} 0.25 50M] 135 } E|] 200M] T 2N3504 S} Pj} 2N2907 8-169 HSS O.4W} A} 200 45 45 ) 115) 300 50M 0.25 50M} 135 E Z00M| T 2N3505 S| P|] 2N2907A| 8-169 HSs 0.4wW| A} 200 60 60 O; 115] 300 50M 0.25 50M] 135 E 200M| T 2N3506 S| N 8-238 HSS 1.0w] A] 200 60 40 0 40] 200 1.5A 1.0 1.5A 60M] T 2N3507 5S] N 8-238 HSs 1.0Ww] AJ] 200 80 50 0 30} 150 1.5A 1.0 1.5A 60M] T 2N3508 Ss; N 8-240 HSS 0.4w] A} 200 40 20 0 40] 120 10M 0,25 10M 500M| T 2N3509 S| N 8-240 HSS 0.4W1 Al 200 40 20 QO}; 100!) 300 10M 0.25 10M SOOM} T 2N3510 S|] N 8-243 HSS| 0.36W] A] 200 40 10 25] 150] 0.15A 0.25 10M 20 E 350M| T 2N3511 SEN 8-243 HSS; 0.36W] Ay 200 40 15 oO 30{ 120] 0.154 0.25 10M 20 E 450M| T 2N3512 S| N] 2N2537 8-151 HSs 0.8W| A} 200 60 35 a 10 . 1.0 0.5A 250M| T 2N3513 S| N] 2N2480A| 11-6 DFA| 0.25W] A} 200 80 40 Qa 50] 200 1.2 50M 50 E 50M} T 2N3514 S|) N DFA] 0.25W) Ay 175 80 40 0 50) 260 1.2 50M 50 E 50M| T 2N3515 S|] N 11-39 DFA] 0.25w] A| L75 80 40 0 50} 200 1.2 50M 50 E 50M! T 2N3516 S| N DFA{ 0.25Wi A| 200] 100 60 0 50! 200 1.2 50M 50 E 60M| T 2N3517 S| N DFA] 0.25W] A} 175] 100 60 50| 200 1,2 50M 50 E 60M] T 2N3518 S| N 11-39 DFA| 0.25W] A] 175] 100 60 oO 50] 200 1.2 50M 50 E 60M| T 2N3519 S| N DFA) Q.25W) A} 175 60 30 QO} 150) 600 1.0 5.0M] 150 Ez 60M) T 2N3520 | S| N DFA] 0.25W] A| 175] 60 30 | Of 150] 600 1.0]; 5.0M] 150 | E 60M] T 2N3521 S| N DFA 0.3W| A} 200 70 55 O} 100] 300 1.0 10M 30M| T 2N3522 S} ON DFA} 0.25W} A} 200 70 55 QO} 100; 300 1.0 10M 30M| T 2N3523 S| N DFA] 0.25Wy} A} 175 70 53 O} 100; 300 1.0 10M 30M} T 2N3524 S| N DFA| 0.25W] Al 175 70 55 QO! L100} 300 1.0 LOM 30M) T 2N3525 Thyristor, see Table on Page 1-154 2N3526 | S{ N VID} O.8wl| A} 200] 130 } 120 | O} 30] 120 30M 1.0 5OM| 25 | E 40M] T 2N3527 S} P AFA O.4wj A] 200 30 30 0 25 75 0.1N 0.1N] 100 E 5.0M| T 2N3528 thru Thyristors, see Table on Page 1-154 2N3541 2N3543 s{ N HPA 6ow|] Cc] 200 65 60 0 10 80 4.5A 1.0 4.5A L50M| T 2N3544 S| N 9-78 RFC O.3W} A] 175 25 25 Ss 25 10M 600M] T 2N3545 | S} P HSS] 0.36W] A] 200] 20 20 | O] 40) 120 10M 0.2 10M 250M| T 2N3546 S| P 8-246 HSS; 0.36W| Al 200 15 12 0 30; 120 10M 0.15 10M 7OOM) T 2N3547 | S| P LNA] 0.36W] A] 200| 60 60 | O}| 100] 500) 1.0m 1.0 10M/ 120 | E 45M] T 2N3548 | S| P LNA| 0.4W] A] 200] 60 45 1 O| 100] 300 10* 1.0 10M} 150 |] E 60M) T 2N3549 | S| P LNA} 0.4W;] Aj] 200] 60 60 | O| 100) 500 10* 1.0 10M] 150 | E 60M] T 2N3550 S| P LNA O.4w} A} 200 60 45 Oy; 200] 600 10* 0.9 5,0M} 300 E 60M| T 2N3551 Ss) N PHS 40w) Cy} 175] 115 60 o 20 90 210A 1.0 10A 40M| T 2N3552 8S] N PHS 40w] C| 175] 140 80 0 20 90 10A 1,0 LOA 40M| T 2N3553 S| N 6-69 HPA 7.0W}] C}] 200 65 40 10] 100] 0.254 1.0] 0,254 400M] T 2N3554 S| N Hss 0.8Ww; A} 200 60 30 0 25] 100} 0.75A O.7{ 0.754 150M] T 2N3555 thru 2N3562 2N3563 S| N RFA O.2W{ A] 125 30 12 0 20| 200 8.0M 20 E 600M] T 2N3564 | S| N RFA] 0.2W} Aj 125} 30 15 | 0; 20} 500 15M 0.3 20M] 20 | E{ 400M] T 2N3565 S| N} MPS6514| 5-109 AFA 0.2W] Af 125 30 25 OF 150] 600 1.0M 120 E 40M) T 2n3566 | s| N} mesesia] 5-109 | ara} o.3w] A] 125{ 40 } 30 | of 150] ooo) lom] i.o} Ov ta 40m] T 2N3567 | S| N| MPS6530] 5-118 | AFA] O.3w| A] 125] 80 | 40 | O} 40} 120] 0.15A] 0.25) 0.15A 60M] T 2N3568 Sj N AFA O.3w}] A} 125 80 60 Oo 40] 120] 0.154 0.25] O.15A 60M, T 2N3569 S|} N} MPS6531} 5-118 AFA O.3W} Ay 125 80 40 Of 100] 300] 0.15A 0.25} O,15A 60M| T 2N3570 S| N RFA 0.2W}] A] 200 30 15 0 20} 150 5.0M 20 E 1.5G] T 2N3571 S| N RFA O.2w} A} 200 25 15 0 20{ 200 5.0M 20 E 1.5) T 2N3572 S| N RFA O.2w] A} 200 25 13 0 20| 300 5.0M 20 E 1.0G] T 2N3573 thru 2N3575 2N3576 Ss; P HSS| 0.36wW| A[ 200 20 15 Oo 40| 120 10M 0.15 LOM 400m| T 2N3577 S|] N HPA 85w] C] 175] 100 80 oO 12 60 1.0A 5.25 1,0A 12 E 10M] T 2N3578 2N3579 P VID] O.4W|] Aj 200; 60 60 | O| 30) 120); 1.0m 0.5) 5.0M/ 30] E 80M) T 2N3580 | S| P VID] O.4w] A} 200] 60 60 | O} 60; 240/ 1.0M 0.5) 5.0M} 60] E 80M] T 2N3581 S| P VID 0.4W} A} 200 50 40 0 50} 150 0.1M 0.5 5.0M 50 E 30M| T 1-140 RF Transistors RF TRANSISTOR SELECTOR GUIDES SMALL-SIGNAL TRANSISTORS (Listed in order of operating test frequency and power gain) Min Gpe (dB) f Min Pout (mW)* Type Material Polarity MHz Typ Conversion Gain (dB)f 2N3324 Ge P 10 24 2N2273 Ge P 30 10 2N741, A Ge P 30 16 2N2929 Ge P 60 26 2N700 Ge P 70 20 2N700A Ge P 70 22 2N3323 Ge P 100 11 2N707, A Si N 100 200* 2N1562 Ge P 160 5,0 2N1693 Ge P 160 5.0 2N1561 Ge P 160 6.0 2N1692 Ge P 160 6.0 MM1941 si N 175 7.0 2N4072, 3 Si N 175 10 2N3286 Ge P 200 14 2N3294 Si N 200 14 2N918 Si N 200 15 2N2708 Si N 200 15 2N3281 Ge P 200 16 2N3282 Ge P 200 16 2N3283 Ge P 200 16 2N3284 Ge P 200 16 2N3291, 2 Si N 200 16 2N3127 Ge P 200 17 2N3279, 80 Ge P 200 17 2N3287 thru 90 Si N 200 17 2N3307, 8 Si P 200 17 2N3785 Ge Pp 200 18 2N3783, 4 Ge P 200 20 MM5002 Ge P 200 20 MM5001 Ge P 200 22 MM5000 Ge P 200 24 2N3137 Si N 250 6.0 MM1803 Si N 250 7.5 2N2857 Si N 450 12.5 2N3839 Si N 450 12.5 2N4959 Si P 450 15 2N4958 Si P 450 16 2N4957 Si P 450 17 2N1141, 2, 3 Ge P 500 10 typ 2N1195 Ge P 500 10 typ AF239 Ge P 800 11.2G 2N3544 Si N 1000 10* MM1501 Si N 1500 150* MM1500 Si N 1500 250* MM380 Ge P 1500 fax MM1139 Ge P 108 to 10.7 227 9-62N3.544 (siLICON) Q CASE 22 (TO-18) MAXIMUM RATINGS - RF Transistors NPN silicon annular transistor for VHF and UHF oscillator applications. Collector connected to case Ves =25V P= 10 mW @ 1.0GHz Rating Symbol Value Unit Collector-Base Voltage Von 25 Volts Collector-Emitter Voltage Vors 25 Volts Emitter-Base Voltage Ves 3.0 Volts Collector Current Io 100 mA Power Dissipation @ Tr = 25C Po 400 mW Derate above 25C 2.67 mwW/C Power Dissipation @ T Az 25C Pp 300 mW Derate above 25C 2.0 mW/C Junction Temperature Ty +175 c Storage Temperature T stg -65 to +175 C SHORT 330 pF :" { 1000 pF O 5042 ADJUSTABLE LINE TEST CIRCUIT y 0.25 DIA ~ CAPACITIVE LINK COUPLING S00 POWER METER | | oe ona 9-78 (1K me CAVITY) NOTES: 1. SET Vee = 12 Vde. 2. ADJUST Veg FOR Ic == 12 mAde. 3. SEY ADJUSTABLE LINE FOR MAXIMUM POWER OUTPUT. RF Transistors 2N3544 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol Conditions Imin| Typ |Max] Unit Collector-Base = -- Breakdown Voltage BVCBO Io = 10 nAdc, Ip =0 25) 30 Vde Collector-Emitter Breakdown Voltage BVocgs | Ic = 10HA, Veg = 9 25] 30 | -- | Vde Collector Cutoff Current Iono Vop = 15 Vdc, In =0 -- |0.01]/0.1] puAde Emitter Cutoff Current l3Bo Ven = 3 Vdc, Io =0 --| 0.1710 7 pAde DC Current Gain her Vor = 10 Vdc, 1,710 mAdc 25} 50 | -- -- : Vv = 10 Vdc, 1, =10 mAdc, AC Current Gain [Heol CE Cc f = 100 MH 6 9 15 -- ; V4, = 15 Vdc, 1. =0, Collector Output Capacitance Cob CB E ='100 wz) 77 | 77 2.5 pF Collector-Base Time Constant TH Co Vos = 10 Vde.los oe --| -- | 10] ps i f{ =1.0GHz, V_. = 12 Vdc, 10] 16 } -- Ww Oscillator Power Output Pout Lei 3 mAde Cc m 2N3553 (siLICON) 2N3632 For Specifications, See 2N3375 Data Sheet 9-79