HI-201HS S E M I C O N D U C T O R High Speed Quad SPST CMOS Analog Switch December 1993 Features Description * * * * * * * The HI-201HS is a monolithic CMOS Analog Switch featuring very fast switching speeds and low ON resistance. The integrated circuit consists of four independently selectable SPST switches and is pin compatible with the industry standard HI-201 switch. Fast Switching Times, tON = 30ns, tOFF = 40ns Low "ON" Resistance of 30 Pin Compatible with Standard HI-201 Wide Analog Voltage Range (15V Supplies) of 15V Low Charge Injection (15V Supplies) 10pC TTL Compatible Symmetrical Switching Analog Current Range of 80mA Applications * * * * * * High Speed Multiplexing High Frequency Analog Switching Sample and Hold Circuits Digital Filters Operational Amplifier Gain Switching Networks Integrator Reset Circuits Fabricated using silicon-gate technology and the Harris Dielectric Isolation process, this TTL compatible device offers improved performance over previously available CMOS analog switches. Featuring maximum switching times of 50ns, low ON resistance of 50 maximum, and a wide analog signal range, the HI-201HS is designed for any application where improved switching performance, particularly switching speed, is required. (A more detailed discussion on the design and application of the HI-201HS can be found in Application Note 543.) Ordering Information Functional Diagram PART NUMBER V+ SOURCE TTL LOGIC INPUT LEVEL SHIFTER AND DRIVER SWITCH GATE CELL INPUT GATE DRAIN OUTPUT V- 0 1 ON OFF o PACKAGE HI1-0201HS-5 0 C to +75 C 16 Lead Ceramic DIP -25oC to +85oC 16 Lead Plastic DIP o o HI1-0201HS-2 -55 C to +125 C 16 Lead Ceramic DIP HI1-0201HS-4 -25oC to +85oC 16 Lead Ceramic DIP o o HI4P0201HS-5 0 C to +75 C 20 Lead PLCC HI3-0201HS-5 0oC to +75oC 16 Lead Plastic DIP HI1-0201HS-7 0oC to +75oC 16 Lead Ceramic DIP HI9P0201HS-5 SWITCH o HI3-0201HS-4 HI4-0201HS/883 LOGIC TEMP. RANGE o o -55 C to +125 C 0oC to +75oC o o 20 Lead LCC 16 Lead SOIC (W) HI9P0201HS-9 -40 C to +85 C 16 Lead SOIC (W) HI1-0201HS/883 -55oC to +125oC 16 Lead Ceramic DIP HI1-0201HS -8 o o -55 C to +125 C 16 Lead Ceramic DIP Pinouts 11 IN3 OUT4 7 10 OUT3 A4 8 9 A3 (c) Harris Corporation 1993 19 2 17 V+ IN 1 4 18 IN 2 V- 5 17 V+ 6 16 6 16 GND 7 15 GND 7 15 4 3 IN 4 8 14 IN 3 9 10 11 12 13 9-82 14 IN 3 IN 4 8 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright OUT 2 6 20 9 10 11 12 13 OUT 3 IN4 A2 12 NC 1 A3 5 1 A1 GND 18 IN 2 IN 1 4 V- 5 2 A4 13 V+ OUT 1 4 3 OUT 4 V- OUT 2 14 IN2 HI201HS (PLCC) TOP VIEW 20 19 OUT 3 15 OUT2 3 1 A3 2 IN1 2 A4 OUT1 3 OUT 4 1 A2 16 A2 A1 A1 HI201HS (LCC) TOP VIEW OUT 1 HI-201HS (CDIP, PDIP, SOIC) TOP VIEW File Number 3123 HI-201HS Schematic Diagrams TTL/CMOS REFERENCE CIRCUIT VCC SWITCH CELL MP42 V+ MP45 MP44 MP43 P41 Q MN31 QN41 QN43 QN42 C48 R42 QN44 D41 5V ANALOG IN QN45 QP44 ANALOG OUT MP33 MP32 VR1 MN32 MN33 R41 C49 D42 5.6V MP31 QP41 Q QP42 V- MN42 MN44 MN45 VEE DIGITAL INPUT BUFFER AND LEVEL SHIFTER MN46 MP51 MP52 MP4 QN6 QN9 QN7 IX4 IX3 IQ MP8 QN8 MP3 MP7 VR1 IX2 IX1 MP5 MP6 MP10 MP9 MP11 MP12 QN1 IQ C1 MN11 VEE QN4 VA QP1 QN5 QN2 QP4 VR1 QP5 VCC R3 R2 Q C2 MP13 MN5 CFF MN9 MN6 QP6 QP9 MN3 MN4 QP8 MN52 MN51 REPEAT FOR EACH LEVEL SHIFTER 9-83 MN10 MN13 QP7 IX2 MP14 QP2 IX3 IX1 MN12 Q R1 MN7 MN8 MN14 Specifications HI-201HS Absolute Maximum Ratings Thermal Information Supply Voltage (Between Pins 4 and 13) . . . . . . . . . . . . . . . . . . 36V Digital Input Voltage (Pins 1, 8, 9, 16) . . . . . . . . . (V+) +4V, (V-) -4V Analog Input Voltage (One Switch). . . . . . . . . . . . . . . . . . (V+) +2.0V Pins 2, 3, 6, 7, 10, 11, 14, 15 . . . . . . . . . . . . . . . . . . . . . . . (V-) -2.0V Peak Current (S or D) (Pulse at 1ms, 10% Duty Cycle Max.) . . . . . . . . . . . . . . . . . 50mA Continuous Current Any Terminal (Except S or D) . . . . . . . . . . 25mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance JA JC Ceramic DIP . . . . . . . . . . . . . . . . . . . . . . 80oC/W 24oC/W Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . 100oC/W PLCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80oC/W SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100oC/W Operating Temperature HI-201HS-2,-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC HI-201HS-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25oC to +85oC HI-201HS-5,-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +75oC HI-201HS-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC Junction Temperature Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications Supplies = +15V, -15V; VAH (Logic Level High) = 2.4V, VAL (Logic Level Low) = +0.8V, GND = 0V, Unless Otherwise Specified HI-201HS-2/-8 HI-201HS-5/-4/-9/-7 TEST CONDITIONS TEMP MIN TYP MAX MIN TYP MAX UNITS tON, Switch On Time (Note 3) +25oC - 30 50 - 30 50 ns tOFF1, Switch Off Time (Note 3) +25oC - 40 50 - 40 50 ns tOFF2, Switch Off Time (Note 3) +25oC - 150 - - 150 - ns +25oC - 180 - - 180 - ns PARAMETER SWITCHING CHARACTERISTICS Output Settling Time 0.1% "Off Isolation" (Note 4) +25oC - 72 - - 72 - dB Crosstalk (Note 5) +25oC - 86 - - 86 - dB Charge Injection (Note 6) +25oC - 10 - - 10 - pC CS(OFF), Input Switch Capacitance +25oC - 10 - - 10 - pF CD(OFF), +25oC - 10 - - 10 - pF CD(ON), +25oC - 30 - - 30 - pF CA, Digital Input Capacitance +25oC - 18 - - 18 - pF CDS(OFF), Drain-To-Source Capacitance +25oC - 0.5 - - 0.5 - pF VAL, Input Low Threshold Full - - 0.8 - - 0.8 V VAH, Input High Threshold +25oC 2.0 - - 2.0 - - V Full 2.4 - - 2.4 - - V +25oC - -200 - - -200 - A Full - - -500 - - -500 A +25oC - 20 - - 20 - A Full - - +40 - - +40 A Full -15 - +15 -15 - +15 V +25oC - 30 50 - 30 50 Full - - 75 - - 75 +25oC - 3 - - 3 - % Output Switch Capacitance DIGITAL INPUT CHARACTERISTICS IAL, Input Leakage Current (Low) IAH, Input Leakage Current (High) VAH = 4.0V ANALOG SWITCH CHARACTERISTICS VS, Analog Signal Range RON, On Resistance RON Match (Note 2) 9-84 Specifications HI-201HS Electrical Specifications Supplies = +15V, -15V; VAH (Logic Level High) = 2.4V, VAL (Logic Level Low) = +0.8V, GND = 0V, Unless Otherwise Specified (Continued) TEST CONDITIONS PARAMETER IS(OFF), Off Input Leakage Current ID(OFF), Off Output Leakage Current ID(ON), On Leakage Current HI-201HS-2/-8 HI-201HS-5/-4/-9/-7 TEMP MIN TYP MAX MIN TYP MAX UNITS +25oC - 0.3 10 - 0.3 10 nA Full - - 100 - - 50 nA +25oC - 0.3 10 - 0.3 10 nA Full - - 100 - - 50 nA +25oC - 0.1 10 - 0.1 10 nA Full - - 100 - - 50 nA +25oC - 120 - - 120 - mW Full - - 240 - - 240 mW +25oC - 4.5 - - 4.5 - mA Full - - 10.0 - - 10.0 mA +25oC - 3.5 - - 3.5 - mA Full - - 6 - - 6 mA POWER SUPPLY CHARACTERISTICS (Note 7) PD, Power Dissipation I+, Current (Pin 13) I-, Current (Pin 4) NOTES: 1. Absolute maximum ratings are limiting values, applied individually, beyond which the serviceability of the circuit may be impaired. Functional operability under any of these conditions is not necessarily implied. 2. VOUT = 10V, IOUT = 1mA. 3. RL = 1k, CL = 35pF, VIN = +10V, VA = +3V. (See Switching Waveforms). 4. VA = 3V, RL = 1k, CL = 10pF, VIN = 3VRMS, f = 100kHz. 5. VA = 3V, RL = 1k, VIN = 3VRMS, f = 100kHz. 6. CL = 1000pF, VIN = 0V, RIN = 0V, Q = CL x VO. 7. VA = 3V or VA = 0 for all switches. Switching Waveforms V = 3.0V DIGITAL AH INPUT 50% 50% VAL = 0V tOFF1 tON 90% SWITCH OUTPUT 0V 90% tOFF2 10% TOP: TTL Input (2V/Div.) BOTTOM: Output (5V/Div.) HORIZONTAL: 100ns/Div. FIGURE 1A. FIGURE 1B. FIGURE 1. SWITCH tON AND tOFF TIMES 9-85 HI-201HS Typical Performance Curves 80 80 70 70 60 60 ON RESISTANCE () ON RESISTANCE () V+ = +15V, V- = -15V 50 +125oC 40 +25oC 30 -55oC 10 -5 0 +5 ANALOG INPUT (V) +10 0 -15 +15 V+ = +12V, V- = -12V V+ = +15V, V- = -15V -10 -5 0 +5 +10 +15 ANALOG INPUT (V) FIGURE 3. "ON" RESISTANCE vs ANALOG SIGNAL LEVEL AND POWER SUPPLY VOLTAGE 100.0 100.0 LEAKAGE CURRENT (nA) LEAKAGE CURRENT (nA) 30 10 FIGURE 2. "ON" RESISTANCE vs ANALOG SIGNAL LEVEL AND TEMPERATURE 10.0 1.0 0.10 0.01 25 75 V+ = +15V, V- = -15V LEAKAGE CURRENT (pA) 6 5 I+ 4 I3 2 1 -15 5 25 45 65 0.10 75 125 FIGURE 5. ID(ON) vs TEMPERATURE 7 -35 1.0 TEMPERATURE (oC) FIGURE 4. IS(OFF) OR ID(OFF) vs TEMPERATURE 0 -55 10.0 0.01 25 125 TEMPERATURE (oC) SUPPLY CURRENT (mA) 40 20 -10 V+ = +8V, V- = -8V V+ = +10V, V- = -10V 50 20 0 -15 TA = +25oC 85 105 125 TEMPERATURE (oC) FIGURE 6. SUPPLY CURRENT vs TEMPERATURE 100 80 V+ = +15V, V- = -15V V = 0V I 60 ISOFF VD = 0V DOFF S 40 20 IDON 0 -20 -40 -60 ISOFF/IDOFF -80 -100 -120 -140 -160 -180 -200 -14 -12 -10 -8 -6 -4 -2 0 2 4 ANALOG INPUT (V) 6 8 10 12 14 FIGURE 7. LEAKAGE CURRENT vs ANALOG INPUT VOLTAGE Theoretically, leakage current will continue to decrease below +25oC. But due to environmental conditions, leakage measurements below this temperature are not representative of actual switch performance. 9-86 HI-201HS Typical Performance Curves (Continued) IAH1 LEAKAGE CURRENT (nA) LEAKAGE CURRENT (A) 60 40 VAL = 0V, VAH2 = 3V, VAH1 = 5V 20 0 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200 -220 -240 -260 -280 25 45 55 65 75 35 IAH2 IAL 85 95 105 115 125 TEMPERATURE (oC) FIGURE 8. DIGITAL INPUT LEAKAGE CURRENT vs TEMPERATURE 10 9 V+ = +15V, V- = -15V, TA = +25oC 8 ISOFF VD = 0V 7 IDOFF VS = 0V 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -16.0 -15.5 -15.0 -14.5 -14.0 +14.0 +14.5 +15.0 +15.5 +16.0 ANALOG INPUT (V) FIGURE 9. LEAKAGE CURRENT vs ANALOG INPUT VOLTAGE 180 350 tOFF2 160 RL = 1K, CL = 35pF, TA = +25oC 300 120 SWITCHING TIME (ns) SWITCHING TIME (ns) 140 V+ = +15V V- = -15V RL = 1k CL = 35pF 100 80 60 tOFF1 40 tOFF2 200 150 100 tON -35 -15 5 25 45 65 85 105 0 5 125 6 TEMPERATURE (oC) 350 300 SWITCHING TIME (ns) SWITCHING TIME (ns) 350 250 200 tOFF2 175 150 tOFF1 100 7 8 9 10 11 12 9 10 11 12 13 14 15 13 14 V+ = +15V, RL = 1k CL = 35pF, TA = +25oC 250 200 tOFF2 150 100 tOFF1 tON 50 tON 6 8 FIGURE 11. SWITCHING TIME vs POSITIVE AND NEGATIVE SUPPLY VOLTAGE V- = -15V, RL = 1k CL = 35pF, TA = +25oC 300 7 POSITIVE AND NEGATIVE SUPPLY (V) FIGURE 10. SWITCHING TIME vs TEMPERATURE 50 5 tOFF1 tON 50 20 0 -55 250 0 -5 15 POSITIVE SUPPLY (V) -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 NEGATIVE SUPPLY (V) FIGURE 12. SWITCHING TIME vs POSITIVE SUPPLY VOLTAGE FIGURE 13. SWITCHING TIME vs NEGATIVE SUPPLY VOLTAGE Theoretically, leakage current will continue to decrease below +25oC. But due to environmental conditions, leakage measurements below this temperature are not representative of actual switch performance. 9-87 HI-201HS Typical Performance Curves (Continued) 3.0 350 V + = +15V, V- = -15V, RL = 1k CL = 35pF, VAL = 0V, TA = +25oC 250 200 tOFF2 150 100 tOFF1 50 2.5 INPUT LOGIC THRESHOLD (V) SWITCHING TIME (ns) 300 2.0 1.8 1.5 1.0 0.5 tON 0 0 1 2 3 4 DIGITAL INPUT AMPLITUDE (V) 0 5 5 FIGURE 14. SWITCHING TIME vs INPUT LOGIC AMPLITUDE 6 7 8 9 10 11 12 13 POWER SUPPLY VOLTAGE (V) 14 15 FIGURE 15. INPUT SWITCHING THRESHOLD vs POSITIVE AND NEGATIVE SUPPLY VOLTAGES 40 50 VO OUT IN CDON 35 30 30 CAPACITANCE (pF) CHARGE INJECTION (pC) 40 CL 20 VA 10 QOUT QO = CL x VO 0 -10 -20 25 20 15 -30 V+ = +15V, V- = -15V CL = 1000pF, RIN = 0 -40 -50 -10 -5 0 ANALOG INPUT (V) +5 5 CDSOFF 0 -15 +10 FIGURE 16. CHARGE INJECTION vs ANALOG INPUT 140 120 -5 -10 0 +5 ANALOG INPUT (V) 140 V+ = +15V, V- = -15V VIN = 3VRMS, VA = 3V 80 RL = 100 IN VIN 40 OUT VO RL = 1k RL = 1k 100K 1M FREQUENCY (Hz) 100 IN 80 60 OUT VO1 VIN 40 RL = 1k VO2 RL = 1k 20 OFF ISOLATION = 20LOG VIN VO 0 10K +15 V+ = +15V, V- = -15V VIN = 3VRMS, VA = 3V 120 100 60 +10 FIGURE 17. CAPACITANCE vs ANALOG INPUT CROSSTALK (dB) OFF ISOLATION (dB) CDOFF OR CSOFF 10 20 CROSSTALK = 20LOG 0 10K 10M FIGURE 18. OFF ISOLATION vs FREQUENCY VO2 VO1 100K 1M FREQUENCY (Hz) FIGURE 19. CROSSTALK vs FREQUENCY 9-88 10M HI-201HS Test Circuit V+ = +15V 13 SWITCH INPUT 3 VIN = +10V VA SWITCH OUTPUT VO 2 RL 1k 1 CL 35pF HI-201HS LOGIC INPUT 4 5 VO = VIN V- = -15V RL RL + RON CL INCLUDES CFIXTURE + CPROBE GND FIGURE 20. SWITCHING TEST CIRCUIT (tON, tOFF1, tOFF2) Switching Characteristics Typical delay, tON, tOFF, settling time and switching transients in this circuit. If RL or CL is increased, there will be corresponding increases in rise and/or fall RC times.. V+ = +15V OUT VO N RL 1k VA CL 35pF HI-201HS LOGIC INPUT V- = -15V GND FIGURE 21A. LOGIC INPUT 3 LOGIC INPUT (V) 2 1 0 tO FIGURE 21B. FIGURE 21. SWITCHING CHARACTERISTICS vs INPUT VOLTAGE 9-89 HI-201HS Switching Characteristics (Continued) +10 +5 +5 0 0 tO tO 22A. VIN = +10V 22B. VIN = +5V +5 0 0 +5 -5 tO tO 22C. VIN = 0V 22D. VIN = -5V 0 -5 -10 tO 22E. VIN = -10V FIGURE 22. VO - OUTPUT SWITCHING WAVEFORMS 9-90 HI-201HS Application Information Power Supply Considerations Logic Compatibility The electrical characteristics specified in this data sheet are guaranteed for power supplies VS = 15V. Power supply voltages less than 15V will result in reduced switch performance. The following information is intended as a design aid only. The HI-201HS is TTL compatible. Its logic inputs (Pins 1, 8, 9, 16) are designed to react to digital inputs which exceed a fixed, internally generated TTL switching threshold. The HI-201HS can also be driven with CMOS logic (0V-15V), although the switch performance with CMOS logic will be inferior to that with TTL logic (0V-5V). POWER SUPPLY VOLTAGES 12 < VS 15V The logic input design of the HI-201HS is largely responsible for its fast switching speed. It is a design which features a unique input stage consisting of complementary vertical PNP and NPN bipolar transistors. This design differs from that of the standard HI-201 product where the logic inputs are MOS transistors. Although the new logic design enhances the switching speed performance, it also increases the logic input leakage currents. Therefore, the HI-201HS will exhibit larger digital input leakage currents in comparison to the standard HI-201 product. Charge Injection Charge injection is the charge transferred, through the internal gate-to-channel capacitances, from the digital logic input to the analog output. To optimize charge injection performance for the HI-201HS, it is advisable to provide a TTL logic input with fast rise and fall times. If the power supplies are reduced from 15V, charge injection will become increasingly dependent upon the digital input frequency. Increased logic input frequency will result in larger output error due to charge injection. SWITCH PERFORMANCE Minimal Variation VS < 12V Parametric variation becomes increasingly large (increased ON resistance, longer switching times). VS < 10V Not Recommended. VS > 16V Not Recommended. Single Supply The switch operation of the HI-201HS is dependent upon an internally generated switching threshold voltage optimized for 15V power supplies. The HI-201HS does not provide the necessary internal switching threshold in a single supply system. Therefore, if single supply operation is required, the HI-300 series of switches is recommended. The HI-300 series will remain operational to a minimum +5V single supply. Switch performance will degrade as power supply voltage is reduced from optimum levels (15V). So it is recommended that a single supply design be thoroughly evaluated to ensure that the switch will meet the requirements of the application. For Further Information See Application Notes 520, 521, 531, 532, 543 and 557. 9-91 HI-201HS Die Characteristics DIE DIMENSIONS: 2440m x 2860m x 485m 25m METALLIZATION: Type: CuAl Thickness: 16kA 2kA GLASSIVATION: Type: Nitride Over Silox Nitride Thickness: 3.5kA 1kA Silox Thickness: 12kA 2kA WORST CASE CURRENT DENSITY: 9.5 x 104A/cm2 Metallization Mask Layout HI-201HS A1 A2 OUT2 OUT1 IN2 IN1 V+ V- GND IN4 IN3 OUT4 OUT3 A4 A3 9-92