Schottky Detector Diodes
Rev. V3
Schottky Detector Diodes
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• Wide Selection of Packages for Stripline, Coax-
ial, and Waveguide Detectors
• Chip Diodes Available
• Both P and N Type Diodes
• Excellent Sensitivity Through Ka-Band
• Low 1/F Noise
Description
This family of low capacitance Schottky diodes is
designed to give superior performance in video
detectors and power monitors from 100 MHz
through 40 GHz. They have low junction capaci-
tance and repeatable video impedance. These
diodes are available in a wide range of ceramic,
stripline and axial lead packages and as bondable
chips. Both P and N type diodes are offered.
Applications
Detectors and power monitors in stripline, coaxial
and waveguide circuits through 40 GHz.
Case Styles
(See appendix for complete dimensions)
Schottky Detector Diodes
Rev. V3
Schottky Detector Diodes
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Maximum Ratings
Packaged N Type Silicon Schottky
Detector Diodes
These low barrier packaged detector diodes are
suitable for use in stripline, waveguide, and coaxial
detectors. They feature high sensitivity and low l/f
noise. These diodes are listed by increasing test
frequency, grouped by packages style and de-
creasing Tss. Other case styles than those speci-
fied may be available.
Specifications @ TA = +25°C
Model Number 1 Case Style Test Frequency (GHz) Maximum2,3 Tang.
Signal Sensitivity TSS
(dBm)
Video Impedance 3,4
Range
Min./Max.
(k Ohms)
MA40053 54 3 -55 1/2
MA40064 119 3 -55 1/2
MA40202 54 10 -55 1/2
MA40201 119 10 -55 1/2
MA40207 120 10 -55 1/2
MA40205 119 16 -52 1/2
MA40215 120 16 -52 1/2
MA40268 120 36 -49 1/2
Notes:
1. Schottky barrier junction diodes are thermocompression bonded in case style 119 and 120. Case style 54 uses pressure contacts. The
standard case style is given for each model number. Other case styles may be available.
2. The video amplifier bandwidth is 1 MHz and the nominal amplifier noise figure is 3 dB. DC Impedance is 10 k ohms. The DC bias is 20
µA.
3. RF Power = 30 dBm. The DC forward bias is +20 µA.
4. Measured at the indicated test frequency and at -30 dBm RF power.
Temperature Ratings
Storage Operating Temperature
-65°C to +150°C
(Case Styles 54, 119, 120, 135, 135A, 186, 276)
-65°C to +125°C (Case Styles 137, 213)
Power Ratings @ 25°C
Maximum Peak Incident RF Power
Maximum CW RF Power
Derate Linearity to Zero at 150°C
S-X Band 1 Watt - 1 microsecond maximum pulse length
Ku-K Band 0.5 W - 1 microsecond maximum pulse length
S-X Band 150 mW (maximum)
Ku-K Band 100 mW (maximum)
Solder Temperature
For case styles 54, 119, 186, 276
For case style 120
For case styles 137 and 213
230°C for 5 seconds, 1 mm from package
200°C for 5 seconds
150°C for 5 seconds, 1 mm from package
Schottky Detector Diodes
Rev. V3
Schottky Detector Diodes
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
N Type Silicon Schottky Detector Diodes
These low barrier packaged detector diodes are
suitable got use in striping applications. They fea-
ture high sensitivity, and low l/f noise. These diodes
are listed by increasing frequency, and grouped by
package style and TSS. Case styles other than those
specified may be available. For additional informa-
tion, contact the factory.
Model Number Case Style Test Frequency
(GHz)
Minimum1 Tang.
Signal Sensitivity TSS
(dBm)
Video Impedance 2
Range
Min./Max.
(K Ohms)
MA40261 186 3 -55 1/2
MA40143 213 3 -50 1/2
MA40108 137 10 -52 1/2
MA40070 137 10 -50 1/2
MA40264 186 10 -55 1/2
MA40147 213 10 -55 1/2
MA40207-276 276 10 -55 1/2
MA40215-276 276 16 -52 1/2
Packaged P Type Silicon Schottky
Detector Diodes
This series of low barrier P type detector diodes
has good voltage sensitivity and low l/f noise than
similar capacitance N type Schottky diodes. They
are listed by case style.
Model Number Case Style Test Frequency
(GHz)
Minimum1 Tang.
Signal Sensitivity TSS
(dBm)
Video Impedance 2
Range
Min./Max.
(Ohms)
Minimum 2
Sensitivity
(mV/mW)
MA40252 54 10 -55 1.2/1.8 5000
MA40251 119 10 -55 1.2/1.8 5000
MA40257 120 10 -55 1.2/1.8 5000
MA40257-276 276 10 -55 1.2/1.8 5000
Specifications @ TA = +25°C
Notes:
1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. The Input Impedance is 10 k Ohms and DC Bias is 20 µA.
2. Pinc = -30 dBm. The DC forward bias is +20 µA.
Schottky Detector Diodes
Rev. V3
Schottky Detector Diodes
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
N Type Silicon Schottky Chip
Detector Diodes
These low barrier N type chip detector diodes are
suitable for use in microstrip applications. They
feature sensitivity, and low l/f noise. These diodes
are listed by increasing frequency.
Model
Number Case
Style
Test
Frequency
(GHz)
Nominal 1,5
TSS
(dBm)
Minimum Reverse
Voltage VR
(Volts)
Nominal 3
Forward Voltage
(Volts)
Nominal 4 Total
Capacitance
(pF)
MA40220 135 10.0 -52 2.0 0.3 0.12
MA40222 135 16.0 -52 2.0 0.3 0.09
P Type Silicon Schottky Chip
Detector Diodes
These low barrier P type chip detector diodes are
suitable for use in microstrip or stripline circuits.
These diodes are listed by increasing test fre-
quency.
Model
Number Case
Style
Test
Frequency
(GHz)
Nominal 1,5
TSS
(dBm)
Minimum Reverse
Voltage VR
(Volts)
Nominal 3
Forward Voltage
(Volts)
Nominal 4 Total
Capacitance
(pF)
MA40270 135A 10.0 -52 4.0 0.4 0.12
MA40272 135A 16.0 -52 4.0 0.4 0.09
Notes:
1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. Impedance is 10 k Ohms and DC Bias is +20 µA. Wafers are evalu-
ated on a sample basis for TSS.
2. Voltage rating is measured at 10 µA reverse bias current.
3. Forward voltage is measured at a forward current of 1 mA.
4. Capacitance is measured at 0 V and 1 MHz.
5. RF power = -30 dBm. The DC forward bias is +20 µA. Meas ured at the indicated test frequency and at -30 dBm RF power with RL = 10 k
Ohms and DC forward bias +20 µA
Schottky Detector Diodes
Rev. V3
Schottky Detector Diodes
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical Performance Curves
Nominal Output Voltage at X-Band (With Forward Bias) Nominal Output Voltage at X-Band (With Zero Bias)
Nominal Tangential Signal Sensitivity vs. Frequency Nominal Tangential Signal Sensitivity vs. Bias
Current at X-Band
Nominal Video Impedance vs. Bias Current
