TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DUAL ULTRAFAST POWER RECTIFIER Qualified per MIL-PRF-19500/616 DEVICES LEVELS 1N6657 1N6658 1N6659 1N6657R 1N6658R 1N6659R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) (Per Diode) Parameters / Test Conditions Peak Repetitive Reverse Voltage Symbol Value Unit 1N6657, R 1N6658, R 1N6659, R VRWM 100 150 200 Vdc TC = +100C IF 15 Adc Peak Surge Forward Current IFSM 150 A(pk) Thermal Resistance - Junction to Case Rjc 2.3 C/W Average Forward Current (1) TO-254 Note: (1) Derate @ 300mA/C above TC = 100C (2) Pulse Test; 300S, duty cycle 2% ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. VBR 100 150 200 Max. Unit *1 *2 *3 OFF CHARACTERTICS Breakdown Voltage (2) IR = 500Adc Forward Voltage (2) IF = 10Adc IF = 20Adc 1N6657, R 1N6658, R 1N6659, R Reverse Leakage Current (2) VR = 100V VR = 150V VR = 200V 1N6657, R 1N6658, R 1N6659, R Reverse Leakage Current VR = 100V, TC = +100C VR = 150V, TC = +100C VR = 200V, TC = +100C 1N6657, R 1N6658, R 1N6659, R Vdc VF1 VF2 1.0 1.2 Vdc IR1 10 Adc *1 *2 *3 1N6657R, 1N6658R, 1N6659R IR2 1.0 mAdc Reverse Recovery Time IF = 1.0A, IR = 1A, IRR = 100mA trr 35 nS Junction Capacitance VR = 10Vdc, f = 1.0MHz, VSIG = 50mV(p-p) max CJ 150 pF T4-LDS-0068 Rev. 1 (082207) 1N6657, 1N6658, 1N6659 Page 1 of 1