TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/616
T4-LDS-0068 Rev. 1 (082207) Page 1 of 1
DEVICES LEVELS
1N6657 1N6657R JAN
1N6658 1N6658R JANTX
1N6659 1N6659R JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions Symbol Value Unit
Peak Repetitive Reverse Voltage 1N6657, R 100
1N6658, R 150
1N6659, R
VRWM
200
Vdc
Average Forward Current (1) TC = +100°C IF 15 Adc
Peak Surge Forward Current IFSM 150 A(pk)
Thermal Resistance - Junction to Case Rθjc 2.3 °C/W
Note:
(1) Derate @ 300mA/°C above TC = 100°C
(2) Pulse Test; 300µS, duty cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Breakdown Voltage (2)
IR = 500µAdc
1N6657, R
1N6658, R
1N6659, R
VBR
100
150
200
Vdc
Forward Voltage (2)
IF = 10Adc
IF = 20Adc
VF1
VF2 1.0
1.2 Vdc
Reverse Leakage Current (2)
VR = 100V
VR = 150V
VR = 200V
1N6657, R
1N6658, R
1N6659, R
IR1 10 µAdc
Reverse Leakage Current
VR = 100V, TC = +100°C
VR = 150V, TC = +100°C
VR = 200V, TC = +100°C
1N6657, R
1N6658, R
1N6659, R
IR2 1.0 mAdc
Reverse Recovery Time
IF = 1.0A, IR = 1A, IRR = 100mA trr 35 nS
Junction Capacitance
VR = 10Vdc, f = 1.0MHz, VSIG = 50mV(p-p) max CJ 150 pF
TO-254
• 1 • 2 • 3
1N6657, 1N6658, 1N6659
• 1 • 2 • 3
1N6657R, 1N6658R, 1N6659R