2SA1316
2003-03-24
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1316
For Low Noise Audio Amplifier Applications and
Recommended for the First Stages of MC Head
Amplifiers
• Very low noise in the region of low signal source impedance
equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
• Low pulse noise. Low 1/f noise
• Low base spreading resistance: rbb’ = 2.0 Ω (typ.)
• Complementary to 2SC3329
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −80 V
Collector-emitter voltage VCEO −80 V
Emitter-base voltage VEBO −5 V
Collector current IC −100 mA
Base current IB −20 mA
Collector power dissipation PC 400 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −80 V, IE = 0 −0.1 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 −0.1 µA
Collector-emitter breakdown voltage V (BR) CEO I
C = −1 mA, IB = 0 −80 V
DC current gain hFE
(Note)
VCE = −6 V, IC = −2 mA 200 700
Collector-emitter saturation voltage VCE (sat) I
C = −10 mA, IB = −1 mA −0.1 V
Base-emitter voltage VBE V
CE = −6 V, IC = −2 mA −0.6 V
Base spreading resistance rbb’ V
CE = −6 V, IC = −1 mA, f = 100 MHz 2.0 Ω
Transition frequency fT V
CE = −6 V, IC = −1 mA, f = 100 MHz 50 MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz 6.2 pF
VCE = −6 V, IC = −0.1 mA
f = 10 Hz, RG = 10 kΩ 1 6
VCE = −6 V, IC = −0.1 mA
f = 1 kHz, RG = 10 kΩ 0.5 2
Noise figure NF
VCE = −6 V, IC = −0.1 mA
f = 1 kHz, RG = 100 Ω 2.5
dB
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
2SA1316
2003-03-24
2
2SA1316
2003-03-24
3
2SA1316
2003-03-24
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000707EA
A
RESTRICTIONS ON PRODUCT USE
