1
Features
Serial Peripheral Interfa ce (SPI) Compatible
Supports SPI Modes 0 (0,0) and 3 (1,1)
2.1 MHz Clock Rate
128-byte Page Mode Only for Write Operations
Low-voltage and Standard-voltage Operation
5.0 (VCC = 4.5V to 5.5V)
2.7 (VCC = 2.7V to 5.5V)
1.8 (VCC = 1.8V to 3.6V)
Block Write Protection
Protect 1/4, 1/2, or Entire Array
Write Protect (WP) Pin and Write Disable Instructions for
Both Hardware and Software Data Protection
Self-Timed Write Cycle (5 ms Typical)
High Reliability
Endurance: 100,000 Write Cycles
Data Retention: >40 Years
ESD Prote ction: >3000 V
20-lead JEDEC SOIC and 8-pad Leadless Array Package
Description
The AT25 P1024 pr ovides 1, 048,576 bi ts of seri al electric ally era sable prog ramma ble
read only memory (EEPROM) organized as 131,072 words of 8 bits each. The device
is op timi zed for u se in m any ind ustri al and comm erc ial a ppli catio ns w he re lo w pow er
and low vol tage ope ratio n are ess ential. T he AT25P 1024 is availab le in spac e sav ing
20-lead JEDEC SOIC and 8-pad LAP packages.
Rev. 1082D10/99
SPI Serial
EEPROMs
1M (131,072 x 8)
AT25P1024
Preliminary
Pin Configurations
Pin Name Function
CS Chip Select
SCK Serial Data Clock
SI Serial Data Input
SO Serial Data Output
GND Ground
VCC Power Supply
WP Write Protect
HOLD Suspends Serial Input
NC No Connect
(continued)
20-lead SOIC
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
CS
SO
NC
NC
NC
NC
NC
NC
WP
GND
VCC
HOLD
NC
NC
NC
NC
NC
NC
SCK
SI
8-pad Leadless Array
Bottom View
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
CS
SO
WP
GND
AT25P1024
2
The AT25P1024 is enabled through the Chip Select pin
(CS) and accessed via a 3-wire interface consisting of
Serial Data Input (SI), Serial Data Output (SO), and Serial
Clock (S CK). All pr ogramming cy cles are co mpletely s elf-
timed, and no separate ERASE cycle is required before
WRITE.
BLOCK WRITE protection is enabled by programming the
status register with top ¼, top ½ or entire array of write pro-
tection. Separate program enable and program disable
instructions are provided for additional data protection.
Hardware data protection is provided via the WP pin to pro-
tect against inadv ertent write attempts to the status regis-
ter. The HOLD pin may be used to suspend any serial
communication without resetting the serial sequence.
Block Diag ram
Absolute Maxim u m Ratings*
Operating Temperature.................................. -55°C to +125°C*NOTICE: Stresses be yond those listed under Absolute
Maximum Ratings may cause permanent dam-
age t o the device. Th is is a s tress ratin g only and
functio nal oper a tion of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device rel iability.
Storage Temperature..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground.....................................-1.0V to +7.0V
Maximu m Op er ati ng Voltage ...... ...... ..... ....................... .. 6.25V
DC Output Current...................... ...... ..... ...... ................. 5.0 mA
131,072 x 8
AT25P1024
3
Note: 1. This parameter is characterized and is not 100% tested.
Note: 1. VIL and VIH max are reference only and are not tested.
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).
Symbol Test Conditions Max Units Conditions
COUT Output Capacit anc e (S O) 8 pF V OUT = 0V
CIN Input Capacitance (CS, SCK, SI, WP, HOLD)6pFV
IN = 0V
DC Characteristics
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V,
TAC = 0°C to +70°C, VCC = +1.8V to +5.5V (unless otherwise noted).
Symbol Parameter Test Condition Min Typ Max Units
VCC1 Supply Voltage 1.8 3.6 V
VCC2 Supply Voltage 2.7 5.5 V
VCC3 Supply Voltage 4.5 5.5 V
ICC1 Supply Current VCC = 5.0V at 1 MHz, SO = Open Read 2.0 5.0 mA
ICC2 Supply Current VCC = 5.0V at 2 MHz, SO = Open Write 4.0 7.0 mA
ISB1 Standby Current VCC = 1.8V, CS = VCC 0.1 3.0 µA
ISB2 Standby Current VCC = 2.7V, CS = VCC 0.2 3.0 µA
ISB3 Standby Current VCC = 5.0V, CS = VCC 2.0 7.0 µA
IIL Input Leakage VIN = 0V to VCC -3.0 3.0 µA
IOL Output Lea ka ge VIN = 0V to VCC, TAC = 0°C to 70°C -3.0 3.0 µA
VIL(1) Input Low Voltage -0.6 VCC x 0.3 V
VIH(1) Input High Voltage VCC x 0.7 VCC + 0.5 V
VOL1 Output Lo w Voltage 4.5V VCC 5.5V IOL = 3.0 mA 0.4 V
VOH1 Outp ut High Voltage IOH = -1.6 mA VCC - 0.8 V
VOL2 Output Lo w Voltage 1.8V VCC 3.6V IOL = 0.15 mA 0.2 V
VOH2 Outp ut High Voltage IOH = -100 µA VCC - 0.2 V
AT25P1024
4
AC Characteristics
Applicable over recommended operating range from TA = -40°C to +85°C, VCC = As Specified,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol Parameter Voltage Min Max Units
fSCK SCK Clock Frequency 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
0
0
0
2.1
1.0
0.5 MHz
tRI Input Rise Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
2
2
2µs
tFI Input Fall Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
2
2
2µs
tWH SCK High Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
200
400
800 ns
tWL SCK Low Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
200
400
800 ns
tCS CS High Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
250
500
1000 ns
tCSS CS Setup Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
100
250
1000 ns
tCSH CS Hold Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
150
250
1000 ns
tSU Data In Setup Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
30
50
100 ns
tH Data In Hold Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
50
50
100 ns
tHD Hold Setup Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
100
100
400 ns
tCD Hold Hold Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
200
300
400 ns
tVOutput Valid 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
0
0
0
200
400
800 ns
tHO Output Hold Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
0
0
0ns
AT25P1024
5
Note: 1. This parameter is characterized and is not 100% tested.
tLZ Hold to Output Low Z 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
0
0
0
100
200
300 ns
tHZ Hold to Output High Z 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
100
200
300 ns
tDIS Output Disable Time 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
200
250
1000 ns
tWC Write Cycle Tim e 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6
5
10
10 ms
Endurance(1) 5.0V, 25°C, Page Mode 4.5 - 5.5
2.7 - 5.5
1.8 - 3.6 100K Write Cycles
AC Characteristics (Continued)
Applicable over recommended operating range from TA = -40°C to +85°C, VCC = As Specified,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol Parameter Voltage Min Max Units
AT25P1024
6
Serial Interface Description
MASTER: The device that generates the serial clock.
SLAVE: B e ca us e t he Se r ia l Cloc k pi n ( SCK ) is al w ays an
input, the AT25P1024 always operates as a slave.
TRANSMITTER/RECEIVER: The AT25P1024 has
separate pins designated for data transmission (SO) and
reception (SI) .
MSB: The Most Significant Bit (MSB) is the first bit
transmitted and received.
SERIAL OP-CO DE: After the device is selected with CS
going low, the fi rst byte w ill be rece ived. Thi s byte contai ns
the op-code that defines the operations to be performed.
INVALID OP-CODE: If an invali d op-cod e is r eceive d, no
data will b e shift ed into t he AT25P 1024, an d the ser ial o ut-
put pin ( SO) wi ll rema in in a high imped ance s tate un til th e
falling edge of CS is detected again. This will reinitialize the
serial communication.
CHIP SELECT: The AT25P1024 is selected when the CS
pin is lo w. Wh en th e dev i ce is not s ele ct ed, data will not b e
accepted via the SI pin, and the serial output pin (SO) will
remain in a high impedance state.
HOLD: The HOLD pin is u sed in conj unctio n wit h the CS
pin to select the AT25P1024. When the device is selected
and a serial sequence is underway, HOLD can be used to
pause the serial communication with the master device
without re settin g the seria l sequ ence. To pa use, the HOLD
pin must be brought low while the SCK pin is low. To
resume serial communication, the HOLD pin is brought
high while the SCK pin is low (SCK may still toggle during
HOLD). Inputs to the SI pin will be ignored while the SO pin
is in the high impedance state.
WRITE PROTECT: The write protect pin (WP) will allow
normal read/write operations wh en held high. When the
WP pin i s brough t low an d WPE N bit is 1, all wri te opera-
tions to the status register are inhibited. WP going low
while CS is st ill low will interr upt a write to the statu s regis-
ter. If the internal write cycle has already been initiated, WP
going low will have no effect on any write operation to the
status register. The WP pin function is blocked when the
WPEN bi t in the statu s re gister is 0. This will allow the
user to install th e AT25 P1024 in a s ystem wi th the WP pin
tied to ground and still be able to write to the status regis-
ter. All WP pin functions are enabled when the WPEN bit is
set to 1.
SPI Serial Interface
MASTER:
MICROCONTROLLER SLAVE:
AT25P1024
DATA OUT (MOSI)
DATA IN (MISO)
SERIAL CLOCK (SPI CK)
SS0
SS1
SS2
SS3
SI
SO
SCK
CS
SI
SO
SCK
CS
SI
SO
SCK
CS
SI
SO
SCK
CS
AT25P1024
7
Functional Description
The AT25P1024 is designed to interface directly with the
synchronous serial peripheral interface (SPI) of the 6800
type series of microcontrollers.
The AT25P1024 utilizes an 8-bit instruction register. The
list of instructions and their operation codes are contained
in Table 1. All instructions, addresses, and data are trans-
ferred with the MS B first and st art with a high- to-low trans i-
tion.
WRITE ENABLE (WREN): The dev ice w ill power u p in th e
write disable state when VCC is applied. All programming
instr ucti ons m ust t herefo re be p rec eded by a W rite Enab le
instruction.
WRITE DISABLE (WRDI): To protect the device against
inadver ten t writ es, the Wr it e Dis abl e i nst ru ction disabl es all
programmi ng modes . The WRDI ins tructio n is ind ependen t
of the status of the WP pin .
READ STATUS REGISTER (RDSR): The Read Status
Register instruction provides access to the status register.
The REA DY/BUSY and Write Enable status of the devi ce
can be determined by the RDSR instruction. Similarly, the
Block Writ e Pr otec tion bits i ndicate th e exten t o f prote ctio n
employed. These bits are set by using the WRSR i nstruc-
tion.
WRITE STATUS REGISTER (WRSR): The WRSR instruc-
tion allows the user to select one of four levels of protec-
tion. The AT2 5P1024 is divi ded into four array se gments.
Top quarter (1/4), top half ( 1/2), or all of the memory seg-
ments can be protected. Any of the data within any
select ed segment will the refore be READ only . Th e block
write protection le vels and correspond ing status register
control bits are shown in Table 4.
The three bits, BP0, BP1, and WPEN are nonvolatile cells
that have the s ame properti es and function s as the regular
memory cells (e.g. WREN, tWC, RDSR).
The WRSR instruction also allows the user to enable or
disable the write protect (WP) pin through the use of the
Write Protect Enable (WPEN) bit. Hardware write protec-
tion is enabl e d w h en th e W P pin is low and the WPEN bit is
1. Hardware write protection is disabl ed when either the
WP pin is high or the WPEN bit is 0. When the device is
hardware write protected, writes to the Status Register,
includi ng the Bl ock Protec t bits and the WPEN bi t, and the
block- protec ted sec tions in the memory a rra y are dis able d.
Writes are only allowed to sections of the memory which
are not block-protected.
Table 1. Instruction Set for the AT25P1024
Instruction
Name Instruction
Format Operation
WREN 0000 X110 Set Write Enable Latch
WRDI 0000 X100 Reset Wr ite Enable Latch
RDSR 0000 X101 Read Status Register
WRSR 0000 X001 Wr ite Status Register
READ 0000 X011 Read Data from Memory Array
WRITE 0000 X010 Wr ite Data to Memory Array
Table 2. Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
WPEN X X X BP1 BP0 WEN RDY
Table 3. Read Status Register Bit Definition
Bit Definition
Bit 0 (RDY)Bit 0 = 0 (RDY) indicates the device is READY.
Bit 0 = 1 indicates the write cycle is in progress.
Bit 1 (WEN) Bit 1 = 0 i ndicates the de vice is not WRITE ENABLED .
Bit 1 = 1 indicates the device is WRITE ENABLED.
Bit 2 (BP0) See Table 4.
Bit 3 (BP1) See Table 4.
Bits 4-6 are 0s when device is not in an internal write cycle.
Bit 7 (WPEN) See T able 5.
Bits 0-7 are 1s during an internal write cycle.
Table 4. Block Write Protect Bits
Level
Status Register Bits Array Addresses Protected
BP1 BP0 AT25P1024
0 0 0 None
1(1/4) 0 1 01800 - 01FFFF
2(1/2) 1 0 010000 - 01FFFF
3(All) 1 1 0000 - 01FFFF
AT25P1024
8
NOTE: When the WPEN bit is hardware write protected, it
cannot be changed back to 0, as long as the WP pin is
held low.
READ SEQUENCE (READ): Reading the AT25P1024
via the SO (Serial Output) pin requires the following
sequence. After the CS line is pulled low to select a device,
the READ op-code is transmitted via the SI line followed by
the byte ad dress to be read (Refer to Table 6). U pon com-
pletion, any data on the SI lin e will be ignored. The data
(D7-D0) at the specified address is then shifted out onto
the SO line. If only one byte is to be read, the CS line
should be driv en high afte r the da ta come s out. T he REA D
sequence can be continued since the byte address is auto-
matically in cremented a nd data will continue to be shifted
out. When the highest address is reached, the address
counter will roll over to the lowest address allowing the
entire memory to be read in one continuous READ cycle.
WRITE SEQUENCE (WRITE): In order to program the
AT25P10 24, two separate instruc tions must be executed.
First, the device must be write enabled via the Write
Enable ( WREN) Ins truc tio n. T hen a Write (W RITE ) In stru c-
tion may be executed. Also, the address of the memory
location(s) to be programmed must be out side the pro-
tected address field l ocation selected by the Block Write
Protectio n Level. During an internal write c ycle, all com-
mands will be ignored except the RDSR instruction.
A Write Instr uction r equires the foll owing s equence. After
the CS line is pulled lo w to sel ect the dev ice, the W RITE
op-code i s transmitted via the SI line followed by the by te
addres s and the data (D7 -D0) to be program med (Refer to
Table 6 ). Progr am mi ng will s tart after the CS p in is broug ht
high. (The LOW to High transition of the CS pin mu st oc cur
during t he SCK lo w time imm ediately after clocking i n the
D0 (LSB) data bit.
The READY /BUSY statu s of the device can be deter mined
by initiating a READ STATUS REGISTER (RDSR) Instruc-
tion. If Bit 0 = 1, the WRITE cyc le is stil l in progr es s. If Bit 0
= 0, the WRITE cycle has ended. Only the READ STATUS
REGISTER instruction is enabled during the WRITE pro-
gramming cycle.
The A T2 5P1024 is c apable of a 128-byte PA GE WRITE
operati on ONLY. Content of the p age in the array will not
be gu aranteed if l ess than 12 8 bytes of data is rec eived
(byte op erati on i s not s upp or ted ). Afte r e ach by te o f dat a is
received, the seve n low order address bits are internally
incremented by one; the high order bits of the address will
remain constant. If more than 128 bytes of data are trans-
mitted, the address c ou nter wi ll roll ov er an d the previ ous ly
written data will be overwritten. The AT25P1024 is auto-
matically returned to the write disable state at the comple-
tion of a WRITE cycle.
NOTE: If the device is not Write enabled (WREN), the
device wil l i gno re the Wr it e in st ru cti on and wil l r etu rn to th e
standby state, when CS is brought high. A new CS fa lling
edge is required to re-initiate the serial communication.
Table 5. WPEN Operation
WPEN WP WEN Protected
Blocks Unprotected
Blocks Status
Register
0 X 0 Protected Protected Protected
0 X 1 Protected Writable Writable
1 Low 0 Protected Protected Protected
1 Low 1 Protected Writable Protected
X High 0 Protected Protected Protected
X High 1 Protected Writable Writable
Table 6. Addr ess Key
Address AT25P1024
ANA16 - A0
Dont Care Bi ts A23 - A17
AT25P1024
9
Timing Diagrams (for SPI Mode 0 (0, 0))
Synchronous Data Timing
WREN Timing
WRDI Timing
SO V
OH
V
OL
HI-Z HI-Z
t
V
VALID IN
SI V
IH
V
IL
t
H
t
SU
t
DIS
SCK V
IH
V
IL
t
WH
t
CSH
CS V
IH
V
IL
t
CSS
t
CS
t
WL
t
HO
AT25P1024
10
RDSR Timing
WRSR Timing
READ Timing
CS
SCK 01234567891011121314
SI INSTRUCTION
SO 76543210
DATA OUT
MSB
HIGH IMPEDANCE
CS
SI
SCK
HIGH IMPEDANCE
INSTRUCTION
3-BYTE ADDRESS
01234
4
5
5
6
6
7
7
8 9 10 11 28
23 22 21 3
... 21
321
0
0
29 30 31 32 33 34 35 36 37 38
SO
AT25P1024
11
WRITE Timing
HOLD Timing
CS
SCK
SI
SO
3-BYTE ADDRESS 1st BYTE DATA-IN 128th BYTE DATA-IN
INSTRUCTION
HIGH IMPEDANCE
0123456789101128
232221 3 10 654321072
29 30 31 32 33 34
1051
1052
1054
1053
1055
SO
SCK
HOLD
t
CD
t
HD
t
HZ
t
LZ
t
CD
t
HD
CS
AT25P1024
12
Ordering Informat ion
tWC (max)
(ms) ICC (max)
(µA) ISB (max)
(µA) fMAX
(kHz) Ordering Code Package Operation Range
5 7000 7.0 2100 AT25P1024C1-10CC
AT25P1024W1-10SC 8C1
20S Commercial
(0°C to 70°C)
7000 7.0 2100 AT25P1024C1-10CI
AT25P1024W1-10SI 8C1
20S Industrial
(-40°C to 85°C)
10 2000 3.0 1400 AT25P1024C1-10CC-2.7
AT25P1024W1-10SC-2.7 8C1
20S Commercial
(0°C to 70°C)
2000 3.0 1000 AT25P1024C1-10CI-2.7
AT25P1024W1-10SI-2.7 8C1
20S Industrial
(-40°C to 85°C)
10 1000 3.0 500 AT25P1024C1-10CC-1.8
AT25P1024W1-10SC-1.8 8C1
20S Commercial
(0°C to 70°C)
1000 3.0 500 AT25P1024C1-10CI-1.8
AT25P1024W1-10SI-1.8 8C1
20S Industrial
(-40°C to 85°C)
Package Type
8C1 8-pad, 0.300" Wide, Leadless Array Package (LAP)
20S 20-lead, 0.300" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
Options
Blank Standard Device (4.5V to 5.5V)
-2.7 Low-voltage (2.7V to 5.5V)
-1.8 Low-voltage (1.8V to 3.6V)
AT25P1024
13
Packaging Information
*Controlling dimension: millimeters
5.10 (0.201)
4.90 (0.193)
8.10 (0.319)
7.90 (0.311) 0.38 (0.015)
0.30 (0.012)
1.14 (0.045)
0.94 (0.037)
4.76 (0.187)
4.66 (0.183)
0.34 (0.013)
0.24 (0.009)
0.95 (0.037)
0.85 (0.033)
0.92 (0.036)
0.82 (0.032)
1.22 (0.048)
1.12 (0.044) 1
2
3
4
8
7
6
5
TOP VIEW SIDE
VIEW
BOTTOM VIEW
1.32 (0.052)
1.22 (0.048)
0.299 (7.60)
0.291 (7.39)
0.020 (0.508)
0.013 (0.330)
0.420 (10.7)
0.393 (9.98)
PIN 1
.050 (1.27) BSC
0.513 (13.0)
0.497 (12.6)
0.012 (0.305)
0.003 (0.076)
0.105 (2.67)
0.092 (2.34)
0
8REF
0.035 (0.889)
0.015 (0.381)
0.013 (0.330)
0.009 (0.229)
8C1, 8-pad, 0.300" Wide,
Leadless Array Package (LAP)
Dimensions in Millimeters and (Inches)*
20S, 20-lead, 0.300" Wide,
Plastic Gull Wing Small Outline (JEDEC SOIC)
Dimensions in Inches and (Millimeters)
© Atmel Corporation 1999.
Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Companys standard war-
ranty which is detailed in Atmels Ter ms and Conditions located on the Companys web site. The Company assumes no responsibility for
any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without
notice, and does not make any commitment to update the inform ation contained herein. No licenses to patents or other intellectual prop-
erty of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmels products are
not authorized for use as critical components in life support devices or systems.
Mar ks b eari ng ® and/or are registered trademarks and trademarks of Atmel Corporation.
Ter ms and product names in this document may be trademarks of others.
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1082D10/99/xM