Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION ASYNCHRONOUS SRAM HIGH DENSITY, LOW POWER (UtRAM) HIGH-SPEED ASYNCHRONOUS FAST SRAM ASYNCHRONOUS SRAM ORDERING INFORMATION SYNCHRONOUS SRAM SPB & FT SRAM NtRAM LATE-WRITE R-R SRAM DDR / II / II+ SRAM QDR / II / II+ SRAM SYNCHRONOUS SRAM ORDERING INFORMATION MULTI-CHIP PACKAGE NAND/DRAM NOR/SRAM and NOR/UtRAM OneNAND/DRAM NOR/DRAM MOST COMMON MCPS FUSION MEMORY OneNANDTM moviNANDTM Flex-OneNANDTM OneDRAMTM HARD DRIVES HARD DISK DRIVES FLASH-ENABLED DRIVES HYBRID HARD DRIVES FLASH SOLID STATE DRIVES EXTERNAL OPTICAL DRIVES EXTERNAL DVD INTERNAL OPTICAL DRIVES INTERNAL DVD INTERNAL COMBO INTERNAL CD PAGE 3 3-4 4-5 5-6 6 7 7 8-10 11 12 13 13 14 15 15-16 16-17 17 18 19 21 21 22 22 22 23 23 23 23 24-25 26 26 27 28-30 31 32 DDR3 / DDR2 SDRAM MEMORY AND STORAGE DDR3 SDRAM UNBUFFERED MODULES Density 512MB 1GB 2GB NOTES: Org 64Mx64 128Mx64 256Mx64 Speed (Mbps) 800/1066/1333 800/1066/1333 800/1066/1333 E7=DDR3-800 (5-5-5) Part Number M378B6474CZ0-C(F7/F8/H9) M378B2873CZ0-C(F7/F8/H9) M378B5673CZ0-C(F7/F8/H9) F8 = DDR3-1066 (7-7-7) Rank 1 1 2 G9=DDR3-1333 (8-8-8) Composition 1Gb(64M x16) * 4 1Gb(128M x8) * 8 1Gb(128M x8) * 16 Package RoHS RoHS RoHS Voltage: 1.5V DDR3 SDRAM COMPONENTS Density 1Gb 1Gb 1Gb NOTES: Org 256M x4 128M x8 64M x16 E7=DDR3-800 (6-6-6) Speed (Mbps) 800/1066/1333 800/1066/1333 800/1066/1333 F8 = DDR3-1066 (7-7-7) Part Number K4B1G0446C-ZC(F7/F8/H9) K4B1G0846C-ZC(F7/F8/H9) K4B1G1646C-ZC(F7/F8/H9) G9=DDR3-1333 (9-9-9) Package 94ball FBGA 94ball FBGA 112ball FBGA Package Dimension 11x18mm 11x18mm 11x18mm Voltage: 1.5V DDR2 SDRAM REGISTERED MODULES Density 512MB 1GB 1GB 1GB 1GB 2GB 2GB 2GB 2GB 2GB 2GB 4GB 4GB NOTES: Org 64Mx72 128Mx72 128Mx72 128Mx72 128Mx72 256Mx72 256Mx72 256Mx72 256Mx72 256Mx72 256Mx72 512Mx72 512Mx72 CC=PC2-3200 (DDR2-400 @ CL=3) Speed (Mbps) 400/533/667 400/533 400/533 400/533/667 400/533/667 400/533 400/533 400/533 400/533/667 400/533/667 533/667 400/533 400/533/667 Part Number M393T6553EZA-C(CC/D5/E6) M393T2950EZ3-C(CC/D5) M393T2953EZ3-C(CC/D5) M393T2950EZA-C(CC/D5/E6) M393T2953EZA-C(CC/D5/E6) M393T5750EZ3-C(CC/D5) M393T5660CZ3-C(CC/D5) M393T5663CZ3-C(CC/D5) M393T5750EZ3-C(CC/D5/E6) M393T5660CZA-C(CC/D5/E6) M393T5663CZA-C(D5/E6) M393T5160CZ0-C(CC/D5) M393T5160CZA-C(CC/D5/E6) D5=PC2-4200 (DDR2-533 @ CL=4) Parity Register Y N N Y Y N N N Y Y Y N Y E6=PC2-5300 (DDR2-667 @ CL=5) Rank 1 1 2 1 2 2 1 2 2 1 2 2 2 Composition (64M x8)*9 (128M x4)*18 (64M x8)*18 (128M x4)*18 (64M x8)*18 (128M x4)*36 (256M x4)*18 (128M x8)*18 (128M x4)*36 (256M x4)*18 (128M x8)*18 st. (512M x4)*18 st. (512M x4)*18 Voltage:1.8V Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Module Height=1.2" DDR2 SDRAM FULLY BUFFERED MODULES Density 512MB 512MB 1GB 1GB 2GB 2GB 4GB 4GB NOTES: Org 64Mx72 64Mx72 128Mx72 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72 50=Intel AMB Speed (Mbps) 533 667 533 667 533 667 533 533 60: IDT AMB Part Number M395T6553EZ4-CD5(50/60/20) M395T6553EZ4-CE6(50/60/20) M395T2953EZ4-CD5(50/60/20) M395T2953EZ4-CE6(50/60/20) M395T5750EZ4-CD5(50/60/20) M395T5750EZ4-CE6(50/60/20) M395T5160CZ4-CD5(50/60/20) M395T5160CZ4-CE6(50/60/20) Voltage for AMB:1.5V Rank 1 1 2 2 2 2 2 2 Voltage for DRAM:1.8V Composition (64M x8)*9 (64M x8)*9 (64M x8)*18 (128M x4)*36 st. (512M x4)*18 st. (512M x4)*18 Module Height=1.2" Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free 20: NEC AMB DDR2 DRAM SODIMM MODULES Density 512MB 1GB 1GB 2GB NOTES: Org 64Mx64 128Mx64 128Mx64 256Mx64 CC=PC2-3200 (DDR2-400 @ CL=3) AUGUST 2007 Speed (Mbps) 533/667 533/667 533/667 533/667 Part Number M470T6554EZ3-C(D5/E6) M470T2953EZ3-C(D5/E6) M470T2864DZ3-C(D5/E6) M470T5663CZ3-C(D5/E6) D5 =PC2-4200 (DDR2-533 @ CL=4) BR-07-ALL-001 E6=PC2-5300 (DDR2-667 @ CL=5) Rank 2 2 2 2 Composition (32M x16)*8 (64M x8)*16 (64M x16)*8 st.(256M x8)*8 Voltage: 1.8V Package Lead-free Lead-free Lead-free Lead-free Module Height=1.2" SAMSUNG SEMICONDUCTOR, INC. 3 MEMORY AND STORAGE DDR2 / DDR SDRAM DDR2 SDRAM UNBUFFERED MODULES Density 512MB 1GB 1GB 2GB NOTES: Org 64Mx64 128Mx64 128MX72 256Mx64 CC=PC2-3200 (DDR2-400 @ CL=3) Module Height =1.2" Speed (Mbps) 533/667/800 533/667/800 533/667/800 533/667 D5 = PC2-4200 (DDR2-533 @ CL=4) F7=PC2-6400 Part Number M378T6553EZS-C(D5/E6/E7/F7) M378T2953EZ3-C(D5/E6/E7/F7) M378T2863DZS-C(D5/E6/E7/F7) M378T5663DZ3-C(D5/E6) E6=PC2-5300 (DDR2-667 @ CL=5) Rank 1 2 1 2 Composition (64M x8)*8 (64M x8)*16 (128MX8)*9 (128M x8)*16 Package Lead-free Lead-free Lead-free Lead-free E7=PC2-6400 (DDR2-800 @ CL=5) Voltage: 1.8V DDR2 SDRAM COMPONENTS Density 512Mb 512Mb 512Mb 1Gb 1Gb 1Gb 1Gb Org 128M x4 64M x8 32M x16 256M x4 128M x8 128M x8 64M x16 NOTES: CC=DDR2-400 (3-3-3) Speed (Mbps) 400/533/667 400/533/667/800 400/533/667 533/667 533/667 533/667 533/667 Part Number K4T51043QE-ZC(CC/D5/E6) K4T51083QE-ZC(CC/D5/E6/E7) K4T51163QE-ZC(CC/D5/E6) K4T1G044QC-ZC(D5/E6) K4T1G084QD-ZC(D5/E6) K4T1G084QD-ZC(D5/E6) K4T1G164QD-ZC(D5/E6) D5 = DDR2-533 (4-4-4) E6=DDR2-667 (5-5-5) Package Dimension 10x11mm 10x11mm 11x13mm 11x18mm 11x18mm 11x18mm 11x18mm Package 60ball FBGA 60ball FBGA 84ball FBGA 68ball FBGA 68ball FBGA 68ball FBGA 84ball FBGA E7=DDR2-800 (5-5-5) Voltage: 1.8V DDR SDRAM 1U DIMM MODULES: REGISTERED Density 512MB 1GB 2GB NOTES: Org 64Mx72 128Mx72 256Mx72 B0 = DDR266 (133MHz @ CL=2.5) Type: 184-pin Speed (Mbps) 333/400 333/400 333/400 A2 = DDR266 (133MHz @ Cl=2) Composition (64Mx8)*9 (128Mx4)*18 (128Mx4)*36 Part Number M312L6523DZ3 - CB3/CCC M312L2920DZ3 -CB3/CCC M312L5720DZ3-CB3/CCC B3 = DDR333 (166MHz @ CL=2.5) Component Package FBGA FBGA FBGA # Banks Module 1 1 2 Notes Pb-free Pb-free Pb-free CC = DDR400 (200MHz @ CL=3) DDR DRAM SODIMM MODULES Density 512MB 1GB 1GB NOTES: Org 64Mx64 128MX64 128MX64 B0 = DDR266 (133MHz @ CL=2.5) Type: 200-pin, Double Sided Speed (Mbps) 333 333 333 A2 = DDR266 (133MHz @ Cl=2) Height(in): 1.25 Composition (32M x 16)*4 (64M x 8)*16 (64M x 8)*16 Part Number M470L6524DU0-CB300 M470L2923BN0 - C(L)B3 M470L2923DV0-CB300 B3 = DDR333 (166MHz @ CL=2.5) Notes Pb-free Pb-free CC = DDR400 (200MHz @ CL=3) DDR SDRAM DIMM MODULES: UNBUFFERED Density 512MB 512MB 1GB 1GB NOTES: 4 Org 64MX64 64Mx72 128Mx64 128Mx72 B0 = DDR266 (133MHz @ CL=2.5) Type: 184-pin SAMSUNG SEMICONDUCTOR, INC. Speed (Mbps) 333/400 333/400 333/400 333/400 A2 = DDR266 (133MHz @ Cl=2) Package: TSOP components Composition (64M x8) *8 (64M x 8)*9 (64M x 8)*16 (64M x 8)*18 Part Number M368L6523DUS-CB3/CCC M381L6523DUM-CB3/CCC M368L2923DUN-CB3/CCC M381L2923DUM-CB3/CCC B3 = DDR333 (166MHz @ CL=2.5) Voltage: 2.5V BR-07-ALL-001 Notes Pb-free Pb-free Pb-free Pb-free CC = DDR400 (200MHz @ CL=3) AUGUST 2007 DDR SDAM / SDRAM MEMORY AND STORAGE DDR SDRAM COMPONENTS Density 256M 256M 256M 256M 256M 256M 512M 512M 512M 512M 512M 512M 512M 512M NOTES: Org 64Mx4 64Mx4 32Mx8 32Mx8 16Mx16 16Mx16 128Mx4 128Mx4 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 32Mx16 B0 = DDR266 (133MHz @ CL=2.5) Speed (Mbps) 266 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 A2 = DDR266 (133MHz @ Cl=2) Part Number K4H560438H-UC(L)B0 K4H560438H-ZC(L)CC/B3 K4H560838H-UC(L)B3/CCC K4H560838H-ZC(L)B3/CCC K4H561638H-UC(L)/B3/CCC K4H561638H-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H510838D-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H511638D-UC(L)B3/CCC K4H511638D-ZC(L)B3/CCC K4H511638D-UC(L)B3/CCC B3 = DDR333 (166MHz @ CL=2.5) Package 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 60 ball FBGA 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 66 pin TSOP 60 ball FBGA 66 pin TSOP Notes Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free CC = DDR400 (200MHz @ CL=3) 1U SDRAM DIMM MODULES, PC133 / PC100 COMPLIANT: REGISTERED LOW-PROFILE DIMMs (1.2-INCH HEIGHT) Density 128MB** 256MB 512MB 1GB 1GB 2GB Org 16Mx72 32Mx72 64Mx72 128Mx72 128Mx72 256Mx72 NOTES: St.= Stacked components Speed PC133 PC133 PC133 PC133 PC133 PC133 Composition (16x8)*9 (32Mx8)*9 (64Mx4)*18 (St.128Mx4)*18 (128Mx4)*18 (St.128Mx4)*18 Type: 168 pin, Double sided Part Number M390S1723TU - C7A00 M390S3253HUU - C7A00 M390S6450HUU - C7A00 M390S2858ETU - C7A00 M390S2950DUU - C7A00 M390S5658DUU - C7A00 Package: TSOP Components Voltage: 3.3V # Banks Module 1 1 2 2 2 2 Refresh 4K 8K 8K 8K 8K 8K Remarks stacked stacked, avail Q204 SDRAM SODIMM MODULES Density 128MB 256MB 256MB 512MB 512MB Org 16Mx64 32Mx64 32Mx64 64Mx64 64Mx64 NOTES: DS = Double-Sided Speed PC133 PC133 PC133 PC133 PC133 Composition (8Mx16)*8 (16Mx16)*8 (32Mx16)*4 (32Mx16)*8 (64Mx8)*16 L = Commercial Temp., Low Power Interface: SSTL-2 Part Number M464S1724ITS-L7A00 M464S3254HUS-L7A00 M464S3354DUS-C(L)7A M464S6554DUS-C(L)7A M464S6453HV0-C75/L7500 # Banks: 4 Height (in) 1.15 1.25 1.25 1.18 1.25 Latency: CL6 # Banks Module 1 1 1 1 2 Refresh: 8K/32ms SDRAM DIMM MODULES, PC133 COMPLIANT: UNBUFFERED Density 128MB 256MB 256MB 256MB 256MB 512MB 1GB Org 16Mx72 32Mx64 32Mx72 32Mx64 32Mx64 64Mx64 128Mx64 NOTES: Type: 168 pin AUGUST 2007 Speed (Mbps) PC133 PC133 PC133 PC133 PC133 PC133 PC133 Package: TSOP components Composition 128M: (16Mx8)*9 256M: (16Mx8)*16 256M: (16Mx8)*18 256M: (32Mx8)*8 256M: (32Mx8)*8 256M: (32Mx8)*16 512M: (64Mx8)*16 Part Number M374S1723KUS-C7A00 M366S3323KUS- C7A00 M374S3323KUS-C7A00 M366S3253HUS-C7A00 M366S3253HUS-C7A00 M366S6453HUS-C7A00 M366S2953DUS-C7A00 # Banks Module 1 2 2 1 1 2 2 Voltage: 3.3V BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 5 MEMORY AND STORAGE SDRAM / MOBILE SDRAM SDRAM COMPONENTS Density 64Mb** 64Mb** 128Mb** 128Mb** 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb Org 8Mx8 4Mx16 16Mx8 8Mx16 64Mx4 32Mx8 16Mx16 128Mx4 64Mx8 128Mx4 64Mx8 32Mx16 NOTES: 1 L = Commercial Temp., Low Power 2 # Banks: 4 Speed (Mbps) 133 133/143/166 133 133/166 133 133 133/166 133 133 133 133 133 3 Package: TC = TSOP; UC = Lead Free 4 Voltage: 3.3V Part Number K4S640832K-UC(75)000 K4S641632K-UC(L)(75/60)000 K4S280832I-UC(L)(75)000 K4S281632I-UC(L)(75/60)000 K4S560432H-UC(L)(75)000 K4S560832H-UC(L)(75)000 K4S561632H-UC(L)(75/60)000 K4S510632D-UC(L)(75)000 K4S510732D-UC(L)(75)000 K4S510432D-UC(L)(75)000 K4S510832D-UC(L)(75)000 K4S511632D-UC(L)(75)000 Refresh 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K 8K 8K Pkg TSOP 54 54 54 54 54 54 54 54 54 54 54 54 Remarks stacked stacked 5 Speed: PC133 (133MHz CL=3/PC100 CL2) 6 For Ind. Temp., check with SSI Marketing MOBILE SDRAM COMPONENTS Density 64Mb 64Mb 64Mb 128Mb 128Mb 128Mb 128Mb 128Mb 128Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb Org 4Mx16 4Mx16 4Mx16 8MX16 8MX16 8MX16 4MX32 4MX32 4MX32 16Mx16 16Mx16 16Mx16 16Mx16 8Mx32 8Mx32 8Mx32 8Mx32 32Mx16 32Mx16 32Mx16 32Mx16 16Mx32 16Mx32 16Mx32 16Mx32 NOTES: (1) Package: Leaded / Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X /Z: 54balls BOC Mono J /V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch 6 Part Number K4M641633K-(1)(2)(3)(4) K4M64163LK-(1)(2)(3)(4) K4M64163PK-(1)(2)(3)(4) K4M281633H-(1)(2)(3)(4) K4M28163LH-(1)(2)(3)(4) K4M28163PH-(1)(2)(3)(4) K4M283233H-(1)(2)(3)(4) K4M28323LH-(1)(2)(3)(4) K4M28323PH-(1)(2)(3)(4) K4M561633G-(1)(2)(3)(4) K4M56163LG-(1)(2)(3)(4) K4M56163PG-(1)(2)(3)(4) K4X56163PG-(1)(2)(3)(4) K4M563233G-(1)(2)(3)(4) K4M56323LG-(1)(2)(3)(4) K4M56323PG-(1)(2)(3)(4) K4X56323PG-(1)(2)(3)(4) K4M511633E-(1)(2)(3)(4) K4M51163LE-(1)(2)(3)(4) K4M51163PE-(1)(2)(3)(4) K4X51163PE-(1)(2)(3)(4) K4M513233E-(1)(2)(3)(4) K4M51323LE-(1)(2)(3)(4) K4M51323PE-(1)(2)(3)(4) K4X51323PE-(1)(2)(3)(4) S/D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP (2) Temp & Power: C: Commercial (-25 ~ 70'C), Normal SAMSUNG SEMICONDUCTOR, INC. L: Commercial, Low, i-TCSR F: Commercial, Low, i-TCSR & PASR & DS E: Extended (-25~85'C), Normal N: Extended, Low, i-TCSR G: Extended, Low, i-TCSR & PASR & DS I: Industrial (-40~85'C), Normal BR-07-ALL-001 Refresh 4K 4K 4K 4K 4K 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K P: Industrial, Low H: Industrial, Low, i-TCSR & PASR & DS PASR & TCSR (3)~(4) Speed: Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 Power 3.0V 2.5V 1.8V 3.0V 2.5V 1.8V 3.0V 2.5V 1.8V 3.0V 2.5V 1.8V 1.8V 3.0V 2.5V 1.8V 1.8V 3.0V 2.5V 1.8V 1.8V 3.0V 2.5V 1.8V 1.8V # Pins TSOP/BGA FBGA-54balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-90balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-60balls FBGA-90balls FBGA-90balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-60balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3 AUGUST 2007 RDRAM / GRAPHICS MEMORY MEMORY AND STORAGE RIMMTM MODULES Density 128MB ECC 256MB ECC 512MB ECC 128MB NON-ECC 256MB NON-ECC Org x18 x18 x18 x16 x16 Speed (Mbps) 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps # of Devices 4 8 16 4 8 Part Number MR18R1624EG0-CM8/T9 MR18R1628EG0-CM8/T9 MR18R162GEG0-CM8/T9 MR16R1624EG0-CM8/T9 MR16R1628EG0-CM8/T9 Component 288Mb 288Mb 288Mb 256Mb 256Mb Speed (Mbps) 800/1066 800/1066 Part Number K4R881869E-GCM8/T9 K4R271669F-SCK8/S8 Refresh 16K/32ms 16K/32ms Package 92ball FBGA 54ball FBGA Package VDD/VDDQ 136 FBGA* RDRAM COMPONENTS Density 288Mb 128Mb * Org x18 x16 NOTES: Voltage: 2.5 v GRAPHICS MEMORY SELECTION GUIDE Type GDDR4 Density 512Mb Org 16Mx32 Part Number K4U52324Q GDDR3 512Mb 16Mx32 K4J52324Q 136 FBGA* 256Mb 8Mx32 K4J55323Q 136 FBGA 512Mb 32Mx16 K4N51163Q 84 FBGA 256Mb 256Mb 128Mb 8Mx16 16Mx16 16Mx16 4Mx32 K4N56163Q K4D551638 K4D263238 K4D261638 GDDR2 GDDR1 NOTES: *lead free only * clock cycle time Part No. Suffix Description 07 08 09 1A 11 0.71ns 0.83ns 0.90ns 1ns 1.11ns (1400MHz) (1200MHz) (1100MHz) (1000MHz) (900MHz) 84 FBGA 66 TSOPII 144 FBGA 66 TSOPII Speed 1.8/1.8V 1.95/1.95V 1.8/1.8V 1.9/1.9V 1.8/1.8V 1.9/1.9V 1.8/1.8V 1.9/1.9V 1.8/1.8V 2.5/2.5V 2.5/2.5V 2.5/2.5V Bin (MHz) 1100/1200/1400 1600 CS 700/800 900/1000/1200 700/800/ 900/1000 350/400 450/500 350/400/450/500 200/250 200/250 200/250 ** all products are 4 banks 12 1.25ns (800MHz) 14 1.429ns (700MHz) 16 1.667ns (600MHz) 20 2.0 ns (500MHz) 22 2.2 ns (450MHz) 25 2.5 ns (400MHz) 2A 2.86 NS (350MHz) 33 40 50 3.3 ns 4.0 ns 5.0 ns (300MHZ) (250MHz) (200MHz) Product chart for fusion memory solution, OneDRAM, is on page 23. AUGUST 2007 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 7 MEMORY AND STORAGE DRAM Ordering Information DRAM ORDERING INFORMATION K 1 1. 2. 4 2 X 3 X 4 X 5 X 6 X 7 Memory (K) DRAM:4 X 8 X 9 X 10 11 X 12 X 15 S: SSTL-2, 2.2V, 1.8V U: DRSL, 1.8V, 1.2V 72: 72M, 8K/32ms Y: SSTL(LP), 2.5V, 2.5V A:Advanced Dram Technology 88: 288M, 16K/32ms M: 1st Generation B:DDR3 SDRAM 89: 288M, 8K/32ms A: 2nd Generation D: DDR SGRAM 1G: 1G, 8K/64ms B: 3rd Generation E: EDO 2G: 2G, 8K/64ms C: 4th Generation F: FP 4G: 4G, 8K/64ms D: 5th Generation H: DDR SDRAM 2A: 128M, 4K/64ms with TCSR E: 6th Generation J: GDDR3 SDRAM 5A: 256M, 8K/64ms with TCSR F: 7th Generation K: Mobile SDRAM PEA 6A: 64M, 4K/64ms with TCSR G: 8th Generation R: Direct RDRAM S: SDRAM V: Mobile DDR SDRAM PEA X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM 8. 4~5. Density, Refresh 111: 1G, 64K/16ms 17: 16M, 4K/64ms 26: 128M, 4K/32ms 27: 128M, 16K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 40: 4M, 512/8ms 41: 4M, 1K/16ms 44: 144M, 16K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 57: 256M, 16K/32ms 58: 256M, 8K/32ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms SAMSUNG SEMICONDUCTOR, INC. 01: x1 02: x2 03: x2 (Including x1) 04: x4 05: x4 (2CS) J: 11th Generation K: 12th Generation Y: Partial DRAM(2nd) Z: Partial DRAM (for RAMOSTAK Product) 07: x8 Stack (Flexframe) U: GDDR4 SDRAM 16: 16M, 2K/32ms I: 10th Generation 06: x4 Stack (Flexframe) T: DDR SDRAM II 15: 16M, 1K/16ms X 18 H: 9th Generation 6~7. Organization N: DDR SGRAM II PEA: Power Efficient Address X 17 10. Generation 80: 8M, 2K/32ms M: Mobile SDRAM X 16 68: 768M, 8K/64ms Small Classification L: Mobile L2RAM 8 X 14 66: 64M, 8K/64ms 76: 576M, 32K/32ms 3. X 13 9. 08: x8 09: x9 15: x16 (2CS) 16: x16 17: x16 (Including x8/ x4) 18: x18 30: x32 (2CS, 2CKE) 31: x32 (2CS) 32: x32 36: x36 11. " ----" 12. Package - Advanced DRAM Technology A8: x8 Stack (70-mono) G: WBGA Bank T: TSOP2 Z: BOC(LF) L: TSOP2-400F(LF) 1: 1Bank 2: 2Bank 3: 4Bank - DDR SDRAM 4: 8Bank 5: 16Bank 6: 32Bank J: TSOP2-400(LF, DDP) T: TSOP2-400 K: TSOP2-400(DDP) U: TSOP2-400(LF) Interface,VDD,VDDQ G: BOC, WBGA Z: BOC(LF) 0: NONE, NONE, NONE P: BOC(DDP) Q: ISM 1: TTL, 5.0V, 5.0V N: STSOP2 V: STSOP2(LF) 2: LVTTL, 3.3V, 3.3V S: POP(DDP) X: POP(LF, DDP) 3: LVTTL, 3.0V, 3.0V - DDR SDRAM II 4: LVTTL, 2.5V, 2.5V G: BOC Z: BOC(LF) 5: SSTL(LP), 1.8V, 1.8V S: BOC(Smaller) Y: BOC(Smaller, LF) 6: SSTL, 1.5V, 1.5V R: WLP 7: SSTL-2, 3.3V, 2.5V - DDR3 SDRAM 8: SSTL-2, 2.5V, 2.5V G: BOC 9: RSL, 2.5V, 2.5V - DDR SGRAM A: SSTL, 2.5V, 1.8V E: FBGA(LF, DDP) H: SSTL-2 DLL, 3.3V, 2.5V J: FBGA(DDP) V: FBGA(LF) J: LVTTL, 3.0V, 1.8V P: FBGA(LLDDP) M: FBGA(1DQS) L: LVTTL, 2.5V, 1.8V N: FBGA(1DQS,LF) H: BOC M: LVTTL, 1.8V, 1.5V L: TSOP2-400(LF) T: TSOP2-400 N: LVTTL, 1.5V, 1.5V Q: TQFP U: TQFP(LF) Z: BOC(LF) G : FBGA P: LVTTL, 1.8V, 1.8V Q: SSTL, 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V BR-07-ALL-001 AUGUST 2007 DRAM Ordering Information MEMORY AND STORAGE DRAM ORDERING INFORMATION K 1 4 2 X 3 X 4 X 5 X 6 - DDR SGRAM II G: FBGA, BOC X 7 X 8 X 9 X 10 11 X 12 Mobile DDR SDRAM Z: BOC (LF) - GDDR3 SDRAM X 13 X 14 X 15 X 16 X 17 X 18 E: Extended, Normal 1: MCP 6: MCP(LF) N: Extended, Low 4: 96-FBGA 5: 96-FBGA(LF) G: Extended, Low, PASR & TCSR A: 136-FBGA, BOC B: 136-FBGA, BOC(LF) 7: 90-FBGA 8: 90-FBGA(LF) U: Extended, Super Low G: FBGA, BOC V: FBGA, BOC(LF) F: WBGA(LF, 0.8MM) J: WBGA S: Extended, Super Low, PASR & TCSR L: WBGA(0.8MM) T: TSOP2 X: Extra Extend, Normal - Direct RDRAM F: WBGA G: WBGA(LF)3) V: WBGA(LF) Q: ISM I: Industrial, Normal H: WBGA(LF, B/ L 320) J: MWBGA(LF) S: POP X: POP(LF, DDP) P: Industrial, Low M: BGA(R) packages1) (M)2) Mobile DDR SDRAM PEA N: BGA(R) packages 6: POP MONO(LF) 7: 90-FBGA D: Industrial, Super Low R: 54-WBGA 8: 90-FBGA(LF) F: 60-FBGA(LF) T: Industrial, Super Low, PASR & TCSR T: 54-WBGA(LF) L: 60-FBGA Q: ISM - WAFER,CHIP BIZ Level Classification S: POP(DDP) X: POP(LF, DDP) 0: NONE, NONE P: MWBGA S: 54-BGA(R) packages - EDO B: SOJ-300 J: SOJ-400 XDR DRAM J: BOC(LF) N: STSOP2 H: Industrial, Low, PASR & TCSR 1: DC test only P: BOC T: TSOP2-400 U: TSOP2-400(LF) SDRAM F: TSOP2-300 H: TSOP2-300(LF) 1: MCP 2: 90-FBGA(DDP) 3: 90-FBGA(DDP, LF) 4: 96-FBGA - FP 2: DC test, WBI 3: DC, several AC test, WBI 14~15. Speed (Wafer/Chip Biz/BGD: 00) B: SOJ-300 J: SOJ-400 5: 96-FBGA(LF) A: 52-CSP(LF) - DDR SDRAM F: TSOP2-300 H: TSOP2-300(LF) G: CSP(except 54 Pin) R: 54-CSP A0: 10ns@CL2 A1: 8ns B: 54-CSP(LF) D: 90-FBGA(LF) A2: 7.5ns@CL2 E: 90-FBGA (LF, MCP) S: 90-FBGA AA :7.5ns@CL2,TRCD2,TRP2 M: 90-FBGA(MCP) F: Smaller 90FBGA N: STSOP2 T: TSOP2-400 U: TSOP2-400(LF) B0: 7.5ns@CL2.5 B3: 6ns@CL2.5 1: MCP 6: MCP(LF) H: Smaller 90FBGA(LF) K: TSOP2-400(DDP) B4: 5ns@CL2.5 C3: 6ns@CL3 2: 90-FBGA(DDP) 3: 90-FBGA(DDP,LF) N: STSOP2 V: STSOP2(LF) C4: 5ns@CL3 C5: 3.75ns@CL3 4: 96-FBGA 5: 96-FBGA(LF) T: TSOP2-400 U: TSOP2-400(LF) CA: 5.5ns@CL3 R: 54-CSP B: 54-CSP(LF) Y: 54-CSP(DDP) P: 54-CSP(LF, DDP) CC: 5ns@CL3,TRCD3,TRP3 J: WBGA V: WBGA(LF) X: BOC Z: BOC(LF) CE: 5ns@CL3, TRCD3, TRPS3(2.5V) M: FBGA(MCP) E: FBGA(LF, MCP) DRAM COMMON D4: 5ns@CL4 F: Smaller 90 FBGA C: CHIP BIZ M0: 10ns@CL1.5 H: Smaller 90 FBGA(LF) (M): Mirror (LF): Lead Free - Mobile SDRAM Y: 54-CSP(DDP) P: 54-CSP(LF, DDP) T: TSOP2-400 Q: ISM S: 90-FBGA D: 90-FBGA(LF) W: WAFER CD: 4ns@CL3 DS: Daisychain <Only DDR SDRAM TPB code> S0: SH BIN(TPB) V0: SH 2/ 2/ 2 BIN 13. Temp, Power W0: SH 3/ 3/ 3 BIN X0: Uniq. BIN - COMMON (Temp, Power) Y0: SH 3/ 4/ 4 BIN Mobile SDRAM PEA 0: NONE, NONE - DDR SDRAM II F: Smaller 90-FBGA A: Automotive, Normal C4: 5ns@CL3 C: Commercial, Normal CC: 5ns@CL3,TRCD3,TRP3 J: Commercial, Medium CF: 3.75ns@CL3(1.9V) L: Commercial, Low D4: 5ns@CL4 D5: 3.75ns@CL4 F: Commercial, Low, PASR & TCSR D6: 3.0ns@CL4 D7: 2.5ns@CL4 B: Commercial, Super Low DH: 3ns@CL4(1.9V) R: Commercial, Super Low, PASR & TCSR DS: Daisychain Sample E4: 5ns@CL5 K: Commercial, Reduced E5: 3.75ns@CL5 E6: 3.0ns@CL5 E7: 2.5ns@CL5 F6: 3.0ns@CL6 H: Smaller 90-FBGA(LF) S: 90-FBGA D: 90-FBGA(LF) C5: 3.75ns@CL3 F7: 2.5ns@CL6 - DDR3 SDRAM E7: 2.5ns@CL5 F6: 3.0ns@CL6 F7: 2.5ns@CL6 AUGUST 2007 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 9 MEMORY AND STORAGE DRAM Ordering Information DRAM ORDERING INFORMATION K 1 4 2 X 3 X 4 X 5 X 6 X 7 X 8 X 9 X 10 11 X 12 40: 40ns 45: 45ns C3: 7.5ns@CL3 50: 50ns 60: 60ns CA: 9ns@CL3 X 14 X 15 X 16 X 17 X 18 - GDDR3 SDRAM - Mobile DDR SDRAM PEA - EDO & FP (tRAC) X 13 C6: 6ns@CL3 11: 1.1ns 12: 1.25ns 14: 1.429ns 15: 1.5ns(667MHz) 16: 1.667ns 18: 1.818ns 20: 2.0ns 22: 2.2ns - Direct RDRAM (tCC, tRAC) - Mobile L2RAM C6: 300MHz, 53.3ns w/ consumer PKG L0: 100Mhz, CL3 C8: 400MHz, 45ns w/ consumer PKG L2: 166Mhz, CL4 25: 2.5ns 30: 3.0ns C9: 533MHz, 32ns w/ consumer PKG - SDRAM (tCC: Default CL3) 33: 3.3ns 36: 3.6ns G6: 300MHz(3.3ns), 53.3ns 10: 10ns, PC66 40: 4.0ns 1A: 1.0ns K7: 356MHz(2.8ns), 45ns 15: 15ns K8: 400MHz(2.5ns), 45ns 1H: 10ns@CL2, PC100 1L: 10ns, PC100 M8: 400MHz(2.5ns), 40ns 33: 3.3ns 40: 4ns M9: 533MHz(1.9ns), 35ns 45: 4.5ns 50: 5ns N1: 600MHz(1.667ns), 32ns 55: 5.5ns 56: 5.6ns A2: 2.4Gbps, 36ns, 16Cycles N9: 533MHz(1.9ns), 32ns 60: 6ns 67: 6.7ns A3: 3.2Gbps, 27ns, 16Cycles P3: 667Mhz(1.5ns), 31ns 70: 7ns 74: 7.4ns B3: 3.2Gbps, 35ns, 20Cycles R6: 800Mhz(1.25ns), 27ns 75: 7.5ns, PC133 B4: 4.0Gbps, 28ns, 20Cycles S8: 400MHz, 45ns SC 7B: 7.5ns PC133, CL3, TRCD2, TRP2 C3: 3.2Gbps, 35ns, 24Cycles S9: 533MHz(1.9ns), 35ns SC 7C: 7.5ns PC133, CL2, TRCD2, TRP2 C4: 4.0Gbps, 28ns, 24Cycles T9: 533MHz(1.9ns), 32ns, tDAC 3 80: 8ns DS: Daisychain Sample DS: Daisychain Sample 96: 9.6ns *SC (Short channel) DP: Daisychain (PCB) L1: 133Mhz, CL3 12: 12ns 2A: 2.86ns 90: 9ns 15: 1.5ns(667MHz) XDR DRAM DRAM COMMON DS: Daisychain DY: Daisychain (Sanyo PCB) - Mobile SDRAM - GDDR4 SDRAM 00: NONE 16. Packing Type (16 digit) 15: 15ns@CL2 1H: 10ns@CL2 < Only SDRAM TPB Code > 1L: 10ns@CL3 75: 7.5ns@CL3 S0: 7.0ns BIN T0: 5.5ns BIN Common to all products, except of Mask ROM 80: 8ns@CL3 U0: 6.0ns BIN V0: 7.5ns BIN Divided into TAPE & REEL(In Mask ROM, divided into 90: 9.0ns@CL3(12ns@CL2) W0: 8.0ns BIN G0: 5.6ns BIN TRAY, AMMO Packing Separately) 95: 9.5ns@CL3(12ns@CL2) - DDR SGRAM (tCC: Default CL3) DP: Daisychain (PCB) 20: 2.0ns 21: 2.1ns(475MHz) Type DS: Daisychain Sample 22: 2.2ns(450MHz) 25: 2.5ns Component TAPE & REEL DY: Daisychain (Sanyo PCB) 30: 3ns 33: 3.3ns - Mobile SDRAM PEA 35: 3.5ns 36: 3.6ns 3N 3.32ns(301MHz) 40: 4ns 75: 7.5ns@CL3 45: 4.5ns 50: 5ns 90: 9.0ns@CL3(12ns@CL2) 55: 5.5ns 1L: 10ns@CL3 60: 6ns@CL3 - Mobile DDR SDRAM Packing Type New Marking T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y 60: 6ns (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M 70: 7ns 2A: 2.86ns(350MHz) C0: 15ns@CL3 C2: 10ns@CL3 2B: 2.94ns(340MHz) 2C: 2.66ns(375MHz) C3: 7.5ns@CL3 C6: 6ns@CL3 5A: 5ns@CL3(TRCD3, TRP3) CA: 9ns@CL3 < Only SDRAM TPB Code> NOTES: DP: Daisychain (PCB) S0: 4.0ns BIN 1) gBGA(R) packages are registered trademarks of Tessera. DS: Daisychain - DDR SGRAM II 2) (M): Mirror DY: Daisychain (Sanyo PCB) 12: 1.25ns 14: 1.429ns 15: 1.5ns (667MHz) 16: 1.667ns 18: 1.818ns 1K: 1.996ns 2A: 2.86ns(350MHz) 20: 2ns 22: 2.2ns 25: 2.5ns 30: 3.0ns 33: 3.3ns 3) (LF): Lead Free 37: 3.75ns 10 SAMSUNG SEMICONDUCTOR, INC. BR-07-ALL-001 AUGUST 2007 NAND Flash MEMORY AND STORAGE NAND FLASH DISCRETE COMPONENTS Density SLC NAND 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 2Gb 2Gb 4Gb 8Gb 16Gb 32Gb MLC NAND 8Gb 16Gb 32Gb 64Gb Part Number Organization Voltage(V) Package Comments K9F5608x0D-PCB K9F5608x0D-JIB K9F1208x0C-PCB K9F1208x0C-JIB K9F1G08U0B-PCB K9F1G08R0B-JIB K9F2G08U0A-PCB K9F2G08R0A-JIB K9F4G08U0A-PCB K9K8G08U0A-PCB K9WAG08U1A-PCB K9NBG08U5A-PCB x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 1.8V; 3.3V 1.8V; 3.3V 1.8V; 3.3V 1.8V; 3.3V 3.3V 1.8V 3.3V 1.8V 3.3V 3.3V 3.3V 3.3V TSOP48 BGA63 TSOP48 BGA63 TSOP48 BGA63 TSOP48 BGA63 TSOP48 TSOP48 TSOP48 TSOP48 DDP QDP DSP K9G8G08U0M-PCB K9LAG08U0M-PCB K9HBG08U1M-PCB K9MCG08U5M-PCB x8 x8 x8 x8 3.3V 3.3V 3.3V 3.3V TSOP48 TSOP48 TSOP48 TSOP48 mono; moving to A-die DDP QDP DSP Product charts for flash fusion memory products - OneNAND, moviNAND and Flex-OneNAND - are located on page 23. AUGUST 2007 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 11 MEMORY AND STORAGE NAND Flash Ordering Information NAND FLASH ORDERING INFORMATION K 1 9 2 X 3 X 4 X 5 X 6 1. Memory (K) 3. Small Classification (SLC: Single Level Cell, MLC: Multi Level Cell, SM: SmartMedia, S/B: Small Block) A: SLC + Muxed I/F Chip B: Muxed I/F Chip S: SLC Single SM D: SLC Dual SM Q: 4CHIP SM T: SLC SINGLE (S/B) E: SLC DUAL (S/B) R: SLC 4DIE STACK (S/B) F: SLC Normal G: MLC Normal K: SLC 2-Die Stack W: SLC 4-Die Stack J: Non-Muxed OneNAND U: 2 STACK MSP V: 4 STACK MSP 4~5. Density 16: 16M 32: 32M 56: 256M 80: 8M 2G: 2G 8G: 8G 6~7. Organization 00: NONE 16: x16 X 8 X 9 X 10 11 8. Vcc 2. NAND Flash: 9 12: 512M 28: 128M 40: 4M 64: 64M 1G: 1G 4G: 4G 00: NONE X 7 08: x8 X 12 X 13 X 14 X 15 X 16 X 17 X 18 13. Temp C: 5.0V(4.5V~5.5V) D: 2.65V(2.4V~2.9V) E: 2.3V~3.6V Q: 1.8V(1.7V~1.95V) T: 2.4V~3.0V U: 2.7V~3.6V V: 3.3V(3.0V~3.6V) W: 2.7V~5.5V,3.0V~5.5V 0: NONE C: Commercial 0: NONE I: Industrial 14. Bad Block B: Include Bad Block D: Daisychain Sample L: 1~5 Bad Block N: Ini. All Good, Add. 10 Blocks S: All Good Block 0: NONE 9. Mode 15. NAND-Reserved O: Normal 1: Dual nCE & Dual Rn/B 4: Quad nCE & Single RnB A: Mask Option 1 0: Reserved 16. Packing Type (16 digit) 10. Generation Common to all products, except of Mask ROM Divided into TAPE & REEL(In Mask ROM, divided into M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Y: Partial NAND(2nd) Z: Partial NAND(1st) M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Y: Partial NAND(2nd) Z: Partial NAND(1st) TRAY, AMMO Packing Separately) Type Packing Type Component TAPE & REEL New Marking T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M 11. "--" 12. Package A: COB C: CHIP BIZ E: TSOP1(LF,1217) G: FBGA J: FBGA(LF) L: LGA P: TSOP1(LF) R: TSOP2-R T: TSOP2 W: WAFER 12 SAMSUNG SEMICONDUCTOR, INC. B: TBGA D: 63-TBGA F: WSOP1(LF) H: TBGA(LF) K: TSOP1(1217) M: tLGA Q: TSOP2(LF) S: SMARTMEDIA V: WSOP Y: TSOP1 BR-07-ALL-001 AUGUST 2007 Asynchronous SRAM MEMORY AND STORAGE UtRAM (High Density & Low Power) Density 32Mbit Part Number K1S321611C K1S32161CD K1S32161BCD K1S32161CD Organization 2Mx16 2Mx16 2Mx16 2Mx16 Vcc (V) 3 3 1.8 3 Speed (ns) 70 70 70 70 Operating Temp I I I E Operating Current (mA) 35 35 35 35 Standby Current (uA) 100 100 100 100 Package 48-FBGA 48-FBGA 48-FBGA 48-TBGA Production Status Mass Production Mass Production Mass Production Mass Production Operating Current (mA) 65, 55 80, 65 65, 55 80, 65 Standby Current (uA) 20, 5 20, 5(1.2) 20, 5 20, 5 Package 44SOJ, 44TSOP2, 48TBGA 44SOJ, 44TSOP2, 48TBGA 36 SOJ, 44 TSOP2 36 SOJ, 44 TSOP2 Production Status Mass Production Mass Production Mass Production Mass Production HIGH-SPEED (4Mbit) ASYNCHRONOUS FAST SRAM Density 4Mbit Part Number K6R4016C1D K6R4016V1D K6R4008C1D K6R4008V1D Organization 256Kx16 256Kx16 512Kx8 512Kx8 Vcc (V) 5 3.3 5 3.3 Speed (ns) 10 10 10 10 Operating Temp I I I I NOTE: Ordering Information: http://www.samsung.com/Products/Semiconductor/Support/Label_CodeInfo/Async_SRAM.pdf AUGUST 2007 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 13 Asynchronous SRAM Ordering Information MEMORY AND STORAGE ASYNCHRONOUS SRAM ORDERING INFORMATION K 1 6 2 X 3 X 4 X 5 1. Memory (K) X 7 X 8 X 9 X 10 11 M: 1st Generation A: 2nd Generation C: 4th Generation E: 6th Generation G: 8th Generation 3. Small Classification E: Corner Vcc/Vss + Fast SRAM F: fCMOS Cell + LPSRAM H: High Speed(LPSRAM) X: High Voltage(LPSRAM) J: BICMOS L: Poly Load Cell + LPSRAM R: Center Vcc/Vss + Fast SRAM T: TFT Cell + LPSRAM B: 3rd Generation D: 5th Generation F: 7th Generation H: 9th Generation 12. Package 08: 256K 16: 16M 32: 32M 64: 64M 09: 512K 20: 2M 40: 4M 80: 8M 04: x4 18: x18 08: x8 24: x24 A: TBGA(LF) C: CHIP BIZ E: TBGA G: SOP J: SOJ L: TSOP1-0813.4F(LF) P: TSOP1-0820F(LF) Q: TSOP2-400R(LF) T: TSOP W: WAFER B: SOP(LF) D: DIP F: FBGA H: BGA K: SOJ(LF) R: TSOP-R U: TSOP2-400(LF) Z: UBGA 6~7. Organization 8. Vcc 5: 1.5V Q: VDD 3.0V/VDDQ 1.8V R: 1.65V~2.2V S: 2.5V T: 2.7V~3.6V V: 3.3V W: 2.2V~3.3V C: 5.0V U: 3.0V * Exception - 1MFSRAM B-ver 32-SOJ-300 > S 28-SOJ-300 > S - 512K/1M/2M/4M LPSRAM 32-TSOP1-0813.4F > Y 32-TSOP1-0813.4 > Y 32-TSOP1-0813.4R > N - 4M LPSRAM 32-TSOP2-400F > V 32-TSOP2-400R > M 9. Mode 1: CS Low Active 2: CS1, CS2 - Dual Chip Select Signal 3: Single Chip Select with /LB,/UB(tOE) 4: Single Chip Select with /LB,/UB(tCS) 5: Dual Chip Select with /LB,/UB(tOE) 6: Dual Chip Select with /LB,/UB(tCS) 7: I/Os Control with /BYTE 8: CDMA Function 9: Multiplexed Address A: Mirror Chip Option 14 SAMSUNG SEMICONDUCTOR, INC. X 13 X 14 X 15 X 16 X 17 X 18 14~15. Speed (tAA) 11. " ----" 4~5. Density 01: x1 16: x16 32: x32 X 12 10. Generation 2. Async SRAM: 6 06: 64K 10: 1M 30: 3M 60: 6M X 6 13. 1st Chip Speed - COMMON (Temp,Power) A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal D: Extended,Low Low E: Extended,Normal F: Industrial,Low Low I: Industrial,Normal L: Commercial,Low M: Military,Normal N: Extended,Low P: Industrial,Low Q: Automotive,Low R: Industrial,Super Low T: Extended,Super Low U: Commercial,Ultra Super Low 0: NONE,NONE - WAFER, CHIP BIZ Level Division 0: NONE,NONE 1: Hot DC sort 2: Hot DC,selected AC sort 3: Cold/Hot DC,selected AC sort BR-07-ALL-001 - fCMOS Cell + LPSRAM & Poly Load Cell + LPSRAM & TFT Cell + LPSRAM 10: 100ns 12: 120ns 15: 150ns 25: 25ns(only fCMOS Cell) 30: 300ns 35: 35ns(except Poly Load Cell) 45: 45ns(except fCMOS Cell) 55: 55ns 60: 60ns(only fCMOS Cell) 70: 70ns 85: 85ns 90: 90ns(only fCMOS Cell) DS: Daisychain Sample - High Speed (LPSRAM) 20: 20ns 25: 25ns - High Voltage (LPSRAM) 55: 55ns 70: 70ns 85: 85ns - Corner Vcc/Vss + Fast SRAM 10: 10ns 12: 12ns 13: 13ns 15: 15ns 17: 17ns 20: 20ns 25: 25ns 30: 30ns 35: 35ns 45 :45ns - BICMOS & Center Vcc/Vss + Fast SRAM 06: 6ns 08: 8ns 09: 9ns 10: 10ns 12: 12ns 13: 13ns 15: 15ns 17: 17ns 20: 20ns 25: 25ns 30: 30ns(only Center Vcc/Vss + Fast SRAM) 35: 35ns(only Center Vcc/Vss + Fast SRAM) 7A: 7.2ns(only BICMOS) 8A: 8.6ns(only BICMOS) DS: Daisychain Sample - Async SRAM COMMON 00: NONE (Containing Wafer, CHIP BIZ, Exception code) 16. Packing Type (16 digit) - Common to all products, except of Mask ROM - Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type Component TAPE & REEL New Marking T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M AUGUST 2007 Synchronous SRAM MEMORY AND STORAGE SPB & FT (36Mbit) SRAM Part Number K7A323630C K7A321830C K7B323635C K7B321835C NOTES: Organization 1Mx36 2Mx18 1Mx36 2Mx18 Operating Mode SPB SPB SB SB Vdd (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Access Time tCD(ns) 3.1 3.1 7.5 7.5 Speed tCYC (MHz) 200 200 118 118 I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free Status Comments 2E1D 2E1D Ind Temp only Ind Temp only Speed tCYC (MHz) 250, 167 200 250, 167 200 117 117 I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free Status Comments 2E1D 2E2D 2E1D 2E2D - Package 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) Status Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Comments 2E1D 2E1D 2E1D 2E1D - Status Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Comments 2E1D 2E1D 2E1D 2E1D 2E1D Status Comments 2E1D = 2-cycle Enable and 1-cycle Disable 200MHz could cover 167MHz, 133MHz speed option SPB & FT (18Mbit) SRAM Part Number K7A163630B K7A163631B K7A161830B K7A161831B K7B163635B K7B161835B NOTES: Organization 512Kx36 512Kx36 1Mx18 1Mx18 512Kx36 1Mx18 Operating Mode SPB SPB SPB SPB SB SB Vdd (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Access Time tCD(ns) 2.6, 3.5 3.1 2.6, 3.5 3.1 7.5 7.5 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option SPB & FT (8Mbit) SRAM Part Number K7A803600B K7A803609B K7A801800B K7A801809B K7B803625B K7B801825B NOTES: Organization 256x36 256x36 512x18 512x18 256x36 512x18 Operating Mode SPB SPB SPB SPB SB SB Vdd (V) 3.3 3.3 3.3 3.3 3.3 3.3 Access Time tCD(ns) 3.5 2.6 3.5 2.6 6.5 6.5 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable Speed tCYC (MHz) 167 250 167 250 133 133 I/O Voltage (V) 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 Recommended speed options for SPB are 250MHz and 167MHz Recommended access speed option for SB is 6.5ns SPB & FT (4Mbit) SRAM Part Number K7A403600B K7A401800B K7A403609B K7A401809B K7A403200B K7B403625B K7B401825B NOTES: Organization 128Kx36 256Kx18 128Kx36 256Kx18 128Kx32 128Kx36 256Kx18 Operating Mode SPB SPB SPB SPB SPB SB SB Vdd (V) 3.3 3.3 3.3 3.3 3.3 3.3 3.3 Access Time tCD(ns) 3.5 3.5 2.4 2.4 3.5 6.5 6.5 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable Speed tCYC (MHz) 167 167 250 250 167 133 133 I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) Recommended speed options for SPB are 250MHz and 167MHz Recommended access speed option for SB is 6.5ns NtRAMTM (72Mbit) SRAM Part Operating Number Organization Mode Vdd (V) K7N643645M 2Mx36 SPB 2.5 K7N641845M 4Mx18 SPB 2.5 NOTES: Access Time tCD(ns) 2.6, 3.5 2.6, 3.5 Speed tCYC (MHz) 250, 167 250, 167 I/O Voltage (V) 2.5 2.5 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option AUGUST 2007 BR-07-ALL-001 Package 100TQFP, 165FBGA 100TQFP, 165FBGA All packages are Pb-free SAMSUNG SEMICONDUCTOR, INC. 15 MEMORY AND STORAGE Synchronous SRAM NtRAMTM (36Mbit) SRAM Part Number K7N323635C K7N321835C K7M323631C K7M321831C NOTES: Organization 1Mx36 2Mx18 1Mx36 2Mx18 Operating Mode SPB SPB FT FT Vdd (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Access Time tCD(ns) 2.6, 3.5 2.6, 3.5 7.5 7.5 Speed tCYC (MHz) 250, 167 250, 167 118 118 Recommended speed options for SPB are 250MHz and 167MHz 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP 100TQFP Status Recommended access speed option for SB is 7.5ns NtRAMTM (18Mbit) SRAM Part Number K7N161831B K7N163631B K7M161835B K7M163635B NOTES: Organization 1Mx18 512Kx36 1Mx18 512Kx36 Operating Mode SPB SPB FT(SB) FT(SB) Vdd (V) 3.3, 2.5 3.3, 2.5 3.3 3.3 Access Time tCD(ns) 2.6, 3.5 2.6, 3.5 6.5 6.5 Speed tCYC (MHz) 250, 167 250, 167 133 133 I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Package Status "100TQFP, 165FBGA" "100TQFP, 165FBGA" 100TQFP 100TQFP 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option / 6.5ns could cover 7.5ns speed option All packages are Pb-free NtRAM (8Mbit) SRAM Part Number K7N803601B K7N801801B K7N803609B K7N801809B K7N803645B K7N801845B K7N803649B K7N801849B K7M801825B K7M803625B NOTE: Organization 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 512Kx18 256Kx36 Operating Mode SPB SPB SPB SPB SPB SPB SPB SPB FT FT Vdd (V) 3.3 3.3 3.3 3.3 2.5 2.5 2.5 2.5 3.3 3.3 Access Time tCD(ns) 3.5 3.5 2.6 2.6 3.5 3.5 2.6 2.6 6.5 6.5 Speed tCYC (MHz) 167 167 250 250 167 167 250 250 133 133 Vdd (V) 3.3 3.3 Access Time tCD(ns) 3.0 3.0 Speed tCYC (MHz) 200 200 Access Time Vdd (V) tCD(ns) 1.8 / 2.5V 1.6, 2.0 1.8 / 2.5V 1.6, 2.0 Speed tCYC (MHz) 300,250 300,250 I/O Voltage (V) 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 2.5 2.5 2.5 2.5 3.3, 2.5 3.3, 2.5 Package 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP Status Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Package 100TQFP 100TQFP Status Not for new designs Not for new designs All packages are Pb-free NtRAM (4Mbit) SRAM Part Number K7N403609B K7N401809B NOTE: Organization 128Kx36 256Kx18 Operating Mode SPB SPB I/O Voltage (V) 3.3,2.5 3.3,2.5 All packages are Pb-free LATE-WRITE R-R (32Mbit) SRAM Part Number K7P321874C K7P323674C 16 Organization 2Mx18 1Mx36 Operating Mode SP SP SAMSUNG SEMICONDUCTOR, INC. I/O Voltage (V) 1.5 (Max 1.8) 1.5 (Max 1.8) BR-07-ALL-001 Package 119BGA 119BGA Status C/S C/S AUGUST 2007 Synchronous SRAM MEMORY AND STORAGE LATE-WRITE R-R (16Mbit) SRAM Part Number K7P161874C K7P163674C Organization 1Mx18 512Kx36 Operating Mode SP SP Vdd (V) 2.5 2.5 Access Time tCD(ns) 2 1.6 Speed tCYC (MHz) 250 300 I/O Voltage (V) 1.5 (Max 1.9) 1.5 (Max.1.9) Package 119BGA 119BGA Status C/S C/S Access Time tCD(ns) 1.6 1.6 2.0 2.0 Speed tCYC (MHz) 300 300 250 250 I/O Voltage (V) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) Package 119BGA 119BGA 119BGA 119BGA Status Not for new designs Not for new designs Not for new designs Not for new designs LATE-WRITE R-R (8Mbit) SRAM Part Number K7P801811B K7P803611B K7P801866B K7P803666B Organization 512Kx18 256Kx36 512Kx18 256Kx36 Operating Mode SP SP SP SP Vdd (V) 3.3 3.3 2.5 2.5 LATE-WRITE R-R & R-L (4Mbit) SRAM Part Number K7P401822B K7P401823B K7P403622B Organization 256Kx18 256Kx18 128Kx36 Operating Mode SP SP SP Vdd (V) 3.3 3.3 3.3 Access Time tCD(ns) 2.5,2.7,3.0 6.5 2.5,2.7,3.0 Speed tCYC (MHz) 250,200,167 167 250,200,167 I/O Voltage (V) 2.5/3.3 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA Status Not for new designs Not for new designs Not for new designs Vdd (V) 2.5 2.5 Access Time tCD (ns) 1.7/1.9/2.1 1.7/1.9/2.1 Cycle Time (MHz) 333, 330, 250 333, 330, 250 I/O Voltage (V) 1.5(Max 2.0) 1.5(Max 2.0) Package 153BGA 153BGA Status Not for new designs Not for new designs Vdd (V) 1.8~2.5 1.8~2.5 Access Time tCD (ns) 2.3 2.3 Cycle Time (MHz) 330, 300 330, 300 I/O Voltage (V) 1.5~1.9 1.5~1.9 Package 153BGA 153BGA Status Vdd (V) 1.8~2.5 1.8~2.5 1.8~2.5 1.8~2.5 Access Time tCD (ns) 2.0 2.0 2.0 2.0 Cycle Time (MHz) 400, 375, 333 400, 375, 333 400, 375, 333 400, 375, 333 I/O Voltage (V) 1.5~1.8 1.5~1.8 1.5~1.8 1.5~1.8 Package 153BGA 153BGA 153BGA 153BGA Status EOL in June07 EOL in June07 DDR (8Mbit) SRAM Part Number K7D803671B K7D801871B Organization 256Kx36 512Kx18 DDR (16Mbit) SRAM Part Number K7D161874B K7D163674B Organization 1Mx18 512Kx36 DDR (32Mbit) SRAM Part Number K7D321874A K7D323674A K7D321874C K7D323674C AUGUST 2007 Organization 2Mx18 1Mx36 2Mx18 1Mx36 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 17 MEMORY AND STORAGE Synchronous SRAM DDR II CIO/SIO (18Mbit) SRAM Part Number K7I161882B K7I161884B K7J161882B K7J163682B K7I163682B K7I163684B NOTES: Organization 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36 Access Time tCD (ns) 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 2B = Burst of 2 4B = Burst of 4 Cycle Time (MHz) 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 SIO = Separate I/O Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Status Comments CIO-2B CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B CIO = Common I/O DDR II CIO/SIO (36Mbit) SRAM Part Number K7I321882C K7I321884C K7J321882C K7I323682C K7I323684C K7J323682C NOTES: Organization 2Mx18 2Mx18 2Mx18 1Mx36 1Mx36 1Mx36 Access Time tCD (ns) 0.45 0.45 0.45 0.45 0.45 0.45 Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 Cycle Time (MHz) 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Production Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Status Comments CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O C-die will support high-speed bins only 330, 300, 250MHz, which can cover slow-speed bins (200MHz, 167MHz) using stable DLL circuit. DDR II CIO/SIO (72Mbit) SRAM Part Number K7I641882M K7I641884M K7J641882M K7I643682M K7I643684M K7J643682M NOTES: Organization 4Mx18 4Mx18 4Mx18 2Mx36 2Mx36 2Mx36 Access Time Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 2B = Burst of 2 Cycle Time tCD (ns) 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 4B = Burst of 4 I/O (MHz) 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 SIO = Separate I/O Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Status Comments CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO = Common I/O DDR II+ CIO (18Mbit) SRAM Part Number K7K1618T2C K7K1636T2C NOTE: Organization 1Mx18 512Kx36 Vdd (V) 1.8 1.8 Access Time tCD (ns) 0.45 0.45 Cycle Time (MHz) 450, 400, 333 450, 400, 333 I/O Voltage (V) 1.5 1.5 Package 165FBGA 165FBGA I/O Voltage (V) 1.5 1.5 Production Package 165FBGA 165FBGA Status Comments DDRII + CIO-2B DDRII + CIO-2B Status Comments DDRII + CIO-2B DDRII + CIO-2B Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand. DDR II+ CIO (36Mbit) SRAM Part Number K7K3218T2C K7K3236T2C NOTE: 18 Organization 2Mx18 1Mx36 Vdd (V) 1.8 1.8 Access Time tCD (ns) 0.45 0.45 Cycle Time (MHz) 450, 400, 333 450, 400, 333 Offer 2-clock latency now; we can also support 2.5-clock latency with 450MHz speed based on demand. SAMSUNG SEMICONDUCTOR, INC. BR-07-ALL-001 AUGUST 2007 Synchronous SRAM MEMORY AND STORAGE QDR I, II (18Mbit) SRAM Part Number K7R160982B K7R161882B K7R161884B K7Q161862B K7Q161864B K7R163682B K7R163684B K7Q163662B K7Q163664B NOTES: Organization 2Mx9 1Mx18 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36 512Kx36 Vdd (V) 1.8 1.8 1.8 1.8v / 2.5v 1.8v / 2.5v 1.8 1.8 1.8v / 2.5v 1.8v / 2.5v 2B = Burst of 2 NOTES: Organization 4Mx9 2Mx18 2Mx18 1Mx36 1Mx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M Organization 8Mx9 4Mx18 4Mx18 2Mx36 2Mx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 Part Number K7S1618T4C K7S1636T4C Organization 1Mx18 512Kx36 Vdd (V) 1.8 1.8 Status Comments QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B Access Time tCD (ns) 0.45 0.45 0.45 0.45 0.45 Cycle Time (MHz) 300, 250, 200 300, 250, 200 333, 300, 250 300, 250, 200 333, 300, 250 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Status Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Status Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B I/O Voltage (V) 1.5 1.5 Package 165FBGA 165FBGA Status Comments QDR II + 4B QDR II + 4B I/O Voltage (V) 1.5 1.5 Production Package 165FBGA 165FBGA Status Comments QDR II + 4B QDR II + 4B Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 Access Time tCD (ns) 0.45 0.45 Cycle Time (MHz) 450, 400, 333 450, 400, 333 Offer 2-clock latency now; we can also support 2.5-clock latency with 450MHz speed based on demand. QDR II+ (36Mbit) SRAM Part Number K7S3218T4C K7S3236T4C NOTE: Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 2B = Burst of 2 4B = Burst of 4 The recommended speed bins are 250MHz, 200MHz for 2B part, 300MHz, 250MHz for 4B part. QDR II+ (18Mbit) SRAM NOTE: I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 2B = Burst of 2 4B = Burst of 4 C-die will support high-speed bins only 300, 250, 200MHz, which can cover slow-speed bin (167MHz) using stable DLL circuit. QDR II (72Mbit) SRAM NOTES: Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 167 167 250,200,167 300,250,200,167 167 167 4B = Burst of 4 QDR II (36Mbit) SRAM Part Number K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 2.5 2.5 0.45,0.45,0.50 0.45,0.45,0.45,0.50 2.5 2.5 Organization 1Mx36 2Mx18 Vdd (V) 1.8 1.8 Access Time tCD (ns) 0.45 0.45 Cycle Time (MHz) 450, 400, 333 450, 400, 333 Offer 2-clock latency now; we can also support 2.5-clock latency with 450MHz speed based on demand. AUGUST 2007 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 19 Synchronous SRAM Ordering Information MEMORY AND STORAGE SYNCHRONOUS SRAM ORDERING INFORMATION K 1 7 2 X 3 X 4 X 5 1. Memory (K) 2. Sync SRAM: 7 3. Small Classification A: Sync Pipelined Burst B: Sync Burst C: Custom Product D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O L: Late Select M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM X 6 X 7 X 8 X 9 X 10 11 X 12 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 70: 2.5V,HSTL,4-1-1-1 71: 2.5V,HSTL,3-1-1-1 73: 1.5V,1.8V,HSTL,All 74: 1.8V,2.5V,HSTL,All 80: 1.8V,LVCMOS,2E1D 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 85: 1.8V,LVCMOS,2E2D,Hi SPEED 88: 1.8V,HSTL,R-R 91: 1.5V,HSTL,All 95: 1.0V,HSTL,All T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4 P: Sync Pipe 10. Generation Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+ 4~5. Density 10: 1M 20: 2M 40: 4M 64: 72M 80: 8M 16: 18M 32: 36M 44: 144M 6~7. Organization 08: x8 18: x18 36: x36 72: x72 11. "--" 12. Package 09: x9 32: x32 44: x144 8~9. Vcc, Interface, Mode 00: 3.3V,LVTTL,2E1D WIDE 01: 3.3V,LVTTL,2E2D WIDE 08: 3.3V,LVTTL,2E2D Hi SPEED 09: 3.3V,LVTTL,Hi SPEED 11: 3.3V,HSTL,R-R 12: 3.3V,HSTL,R-L 14: 3.3V,HSTL,R-R Fixed ZQ 22: 3.3V,LVTTL,R-R 23: 3.3V,LVTTL,R-L 25: 3.3V,LVTTL,SB-FT WIDE 30: 1.8/2.5/3.3V,LVTTL,2E1D 31: 1.8/2.5/3.3V,LVTTL,2E2D 35: 1.8/2.5/3.3V,LVTTL,SB-FT 44: 2.5V,LVTTL,2E1D 45: 2.5V,LVTTL,2E2D 49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 20 M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Z: TEMPORARY CODE SAMSUNG SEMICONDUCTOR, INC. H: BGA,FCBGA,PBGA G: BGA, FCBGA, FBGA (LF) F: FBGA E: FBGA (LF) Q: (L)QPF P: (L)QFP(LF) C: CHIP BIZ W: WAFER 13. Temp, Power X 13 X 14 - WAFER, CHIP BIZ Level Division 0: NONE,NONE X 16 X 17 X 18 14~15. Speed - Sync Burst,Sync Burst + NtRAM & < Mode is R-L >(Clock Accesss Time) 10: 10ns(Sync Burst, Sync Burst + NtRAM) 38: 3.8ns 43: 4.3ns 48: 4.8ns 50: 5ns(Only Sync Pipe) 55: 5.5ns 60: 6ns 65: 6.5ns 67: 6.7ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns 90: 9ns - Other Small Classification (Clock Cycle Time) 10: 100MHz 11: 117MHz 13: 133MHz 14: 138MHz 15: 150MHz 16: 166MHz 17: 175MHz 18: 183MHz 19: 143MHz 20: 200MHz 21: 200MHz(2.0ns) 22: 225MHz 25: 250MHz 26: 250MHz(1.75ns) 27: 275MHz 30: 300MHz 33: 333MHz 35: 350MHz 36: 366MHz(t-CYCLE) 37: 375MHz 40: 400MHz(t-CYCLE) 42: 425MHz 45: 450MHz 50: 500MHz(except Sync Pipe) 6A: 600MHz 6F: 650Mhz(Only CSRAM) 7F: 750MHz 16. Packing Type (16 digit) - Common to all products, except of Mask ROM - Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type - COMMON (Temp,Power) 0: NONE,NONE (Containing of Error handling code) A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal E: Extended,Normal I: Industrial,Normal X 15 Packing Type Component TAPE & REEL New Marking T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M 1: Hot DC sort 2: Hot DC, selected AC sort BR-07-ALL-001 AUGUST 2007 MCPs MEMORY AND STORAGE MCP: NAND/DRAM DENSITY FLASH DRAM Memory Combination FLASH 256Mb 256Mb 256Mb 512Mb ND256256 ND256512 NDD256512512 ND512256 1.8V 3.0V 3.0V 1.8V 2.7V 1.8V 2.65V 1.8V 1.8V 1.8V 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V 1.8V 1.8V 256Mb 512Mb 1Gb 256Mb 512Mb 512Mb ND512512 VCC (V) DRAM 1.8V 2.5V 2.5V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V(D) 1.8V(D) 1.8V 1.8V 2.65V 1.8V 1.8V 1.8V ORGANIZATION FLASH DRAM Part No. Size x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 K5D5657ACC-D090000 K5D5613HCA-D075000 KAL005005M-DGYY000 K5D1257ACC-D090000 K5D12571CM-D090000 K5E1257ACM-D075000 K5D1258DCA-A090000 K5D12121CM-D090000 K5D12131CM-D090000 K5D1213ACE-D090000 K5D1G572CM-D075000 K5E1G58ACM-D060000 K5D1G12ACD-D075000 TBD K5E1G131CA-D075000 KAL00X001M-AJYY000 KAL00X00VM-DJYY000 KAG001002A-DJJY000 KAG006003B-DJJ5000 K5E2G12ACM-D075000 KAL009001M-D1YY000 K5E2G1GACM-D060000 10.5x13x1.4 10.5x13x1.2 10.5X13X1.4 10.5x13x1.2 10.5x13x1.4 10.5x13x1.2 10.5x13x1.2 10.5x13x1.4 10.5x13x1.4 10.5x13x1.2 10.5x13x1.2 10.5x13x1.2 10.5x13x1.4 10.5x13x1.2 10.5x13x1.4 11.5x13x1.4 10.5x13x1.4 11.5x13x1.4 10.5x13x1.4 12.0x14x1.4 12x14x1.4 12x14x1.2 x16 x32 x16 x16 x16 x16 x32 x16 x32 x32 x16 x32 x16 x32 x32 x32 x16 x32(D) x16 x16 x32 x32 PACKAGE INFORMATION Type 107FBGA 137FBGA 137FBGA 107FBGA 107FBGA 107FBGA 137FBGA 107FBGA 137FBGA 137FBGA 107FBGA 107FBGA 107FBGA 137FBGA 137FBGA 137FBGA 137FBGA 137FBGA 137FBGA 107FBGA 137FBGA 137FBGA 1Gb 256Mb ND1G256 1Gb 512Mb ND1G512 1Gb 1Gb 2Gb 512Mb NND1G1G512 2Gb 1Gb NOTES: 1. N = NAND, D= DRAM memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. NDD256256256 = 256Mb NAND + 256Mb DRAM + 256Mb DRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5D5629ACC-D090T00) 3. (D) Denotes DDR SDRAM packaged in MCP 4. (L) Denotes Large Block NAND packaged in MCP NDD1G512512 ND2G512 NDD2G512512 ND2G1G MCP: NOR/SRAM AND NOR/UtRAM DENSITY FLASH SRAM Memory Combination FLASH VCC (V) SRAM FLASH SRAM BOOT ORGANIZATION NOR OPR. Part No. PACKAGE INFORMATION Size Type 32Mb RC3208 RU3216 RU6432 1.8V 3.0V 3.0V 1.8V 3.0V 1.8V 3.0V 1.8V 3.0V 1.8V 2.7V 1.8V x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 TOP TOP/BOM TOP TOP TOP/BOT TOP TOP/BOT BOT TOP/BOT TOP TOP/BOT TOP Sync. Mux, Ut2 Async. No Page Async. No Page Async. DeMux Async. Page Mode Sync Mux Async Page Mode Sync Mux Async Page Mode Sync Mux, Ut2 Async Page Mode Sync DeMux 8x9.2x1.2 8x11x1.2 8x11.6x1.4 8x12x1.2 8x11.6x1.2 8.0x9.2x1.2 8x11.6x1.2 8x9.2x1.2 8x11.6x1.2 8x9.2x1.2 8x11.6x1.2 8x11.6x1.3 64Mb 8Mb 16Mb 32Mb 128Mb 32Mb 128Mb 64Mb RU12832 RU12864 RC12864 256Mb 64Mb RU25664 RC25664 256Mb 128Mb RU256128 NOTES: 1.8V 3.0V 3.0V 1.8V 3.0V 1.8V 3.0V 1.8V 3.0V 1.8V 2.7V 1.8V x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 x16 K5N3208ATM-SF66000 TBD K5J6332CTM-D770000 K5L6532ATM-D870000 K5L2931CAA-D770000 K5L2931CAM-D770000 K5L2963CAM-D770000 K5N2866ABM-DF66000 K5L5563CAM-D770000 K5N5666ATM-SS66000 K5L5527CAM-D770000 K5L5628ATA-DF66000 56FBGA 69FBGA 69FBGA 115FBGA 64FBGA 56FBGA 64FBGA 56FBGA 84FBGA 56FBGA 84FBGA 84FBGA 1. R= NOR, S= SRAM, U= UtRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. RRU646432 = 64Mb NOR + 64Mb NOR + 32Mb UtRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5A3240CTM-F755T00) 3. All NOR Flash have demuxed Add/Data lines unless otherwise indicated in NOR OPR column. 4. All packages are pin compatible to Spansion's MCP pin out. AUGUST 2007 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 21 MEMORY AND STORAGE MCPs MCP: OneNAND/DRAM DENSITY FLASH DRAM Memory Combination 256Mb 256Mb OD256256 3.3V 3.3V 1.8V 1.8V 1.8V 512Mb 512Mb OD512512 1Gb 512Mb OD1G512 2Gb 512Mb OD2G512 NOTES: FLASH VCC (V) DRAM 3.3V 1.8V 1.8V 1.8V 1.8V ORGANIZATION FLASH DRAM Part No. Size x16 x16 x16 x16 x16 K5R5658VCM-DR75000 K5R5658LCM-DR75000 K5R1213ACB-DK75000 K5W1G12ACD-DK75000 K5R2G12ACM-DK90000 8x13x1.4 8x13x1.4 11.5x13x1.4 11.5x13x1.4 11.5x13x1.4 x32 x32 x32 x16(D) x16 PACKAGE INFORMATION Type 188FBGA 188FBGA 202FBGA 167FBGA 202FBGA 1. O= OneNAND, D= DRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. OD1G512 = 1Gb OneNAND + 512Mb SDRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5R5658VCM-DR75T00) 3. (D) Denotes DDR SDRAM packaged in MCP. 4. All OneNAND Flash have demuxed Add/Data lines. MCP: NOR/DRAM DENSITY Memory FLASH SRAM Combination FLASH VCC (V) SRAM FLASH DRAM BOOT ORGANIZATION NOR OPR. Part No. PACKAGE INFORMATION Size Type 64Mb 64Mb 512Mb 512Mb 3.0V 3.0V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V x32 x32(D) x16(D) x16 TOP TOP TOP T+B Async. No Page Async. No Page Sync MLC Sync 10x11x0.8 10.5x12x1.4 11x10x1.3 11.5x13x1.4 NOTES: 256Mb 512Mb 256Mb 512Mb RD64256 RD64512 RRD512256 RRD256256512 x16 x16 x16 x16 K5H6358LTM-D7750CD K5Y6313LTM-D790000 KAS35000AM-S44Y000 KAS280003M-DUU5000 145FBGA 151FBGA 133FBGA 167FBGA 1. R= NOR, D= DRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. RDD32128128 = 32Mb NOR + 128Mb DRAM + 128Mb DRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5H6358ETA-D775T00) 3. All NOR Flash have demuxed Add/Data lines MCP: MOST COMMONLY USED MCP CONFIGURATIONS Memory NAND Density DRAM Density/Organization Voltage (NAND-DRAM) Package NAND & DRAM 256Mb 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 2Gb 2Gb 64Mb 128Mb 128Mb 256Mb 256Mb 256Mb 512Mb 1Gb 1Gb 128Mb (x16) 256Mb (x16) 512Mb (x32) 256Mb (x16/x32) 512Mb (x16/x32) 256Mb (x16) 512Mb (x16/x32) 512Mb (x16/x32) 1Gb (x32) 32Mb 32Mb 64Mb 64Mb 128Mb 256Mb (x32) 512Mb (x16/x32) 512Mb (x16/x32) 1Gb (x16/x32) 1.8V - 1.8V 2.65V - 1.8/1.8V 3V - 3/2.5V 2.65/1.8V - 1.8V 2.65/1.8V - 1.8V 2.65V - 1.8V 3.0/2.65/1.8V - 3.0/2.65/1.8V 3.0/2.65/1.8V - 3.0/2.65/1.8V 2.65/1.8V - 1.8V 3.0V - 3.0V 3.0/1.8V - 3.0/1.8V 3.0/1.8V - 3.0/1.8V 3.0V - 3.0V 3.0V - 3.0V 3.3V - 3.3/1.8V 1.8V-1.8V 1.8V-1.8V 1.8V-1.8V 107FBGA 107FBGA 137FBGA 107FBGA/137FBGA 107FBGA/137FBGA 107FBGA 137/107FBGA 137/107FBGA 137FBGA 69FBGA 56FBGA/64FBGA 64FBGA 84FBGA 84FBGA 188FBGA/167FBGA 167FBGA/202FBGA 167FBGA/202FBGA 202FBGA NOR & UtRAM OneNAND & DRAM NOTES: 22 This list represents the most commonly used MCPs; more options are available. All NAND organization is x8; all NOR and UtRAM organization is x16 each. SAMSUNG SEMICONDUCTOR, INC. BR-07-ALL-001 AUGUST 2007 Fusion Memory MEMORY AND STORAGE FLASH: OneNAND OneNAND is a monolothic IC that combines a NAND flash array with a NOR flash interface plus an SRAM buffer. It's ideal for high-performance, high-density applications. Density 256Mb 256Mb 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 1Gb 2Gb 4Gb NOTE: Org X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 Speed (MHz) 54Mhz 54Mhz 66MHz 54MHz 66MHZ 54MHz 66MHz 54MHZ 66MHz 83Mhz 83Mhz 83Mhz All parts are lead free Voltage(V) 3.3 1.8 1.8 3.3 3.3 1.8 1.8 3.3 3.3 1.8 1.8 1.8 Part Number KFG5616U1A-PIB5000 KFG5616Q1A-DEB5000 KFG5616Q1A-DEB6000 KFG5616U1A-DIB5000 KFG5616U1A-DIB6000 KFG1216Q2B-DEB5000 KFG1216Q2B-DEB6000 KFG1216U2B-DIB5000 KFG1216U2B-DIB6000 KFG1G16Q2B-DEB8000 KFG2G16Q2M-DEB8000 KFH4G16Q2M-DEB8000 Package 48TSOP (12x20) 67 FBGA 67 FBGA FBGA (7x9) FBGA (7x9) 63 FBGA 63 FBGA FBGA (9.5x12) FBGA (9.5x12) 63 FBGA(10x13) 63 FBGA (11x13) 63 FBGA (10x13) Temperature Industrial Extended Extended Industrial Industrial Extended Extended Industrial Industrial Extended Extended Extended Comments For ordering information, refer to page 11. FLASH: moviNAND Combining high-density MLC NAND flash with an MMC controller in a single chip that has an MMC interface, moviNAND delivers dense, cost-effective storage for embedded applications. Density 512MB 1GB 2GB 2GB 2GB 4GB 4GB 4GB 8GB NOTE: Org x8 x8 x8 x8 x8 x8 x8 x8 x8 Speed (MHz) 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz All parts are lead free. Voltage(V) 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 Part Number KMAIN0000A-S998000 KMAFN0000M-S998000 KMBDN0000M-S998000 KMBDE0000A-S998000 KMAKE0000M-B998000 KMCEN0000M-S998000 KMCEE0000A-S998000 KMBLE0000M-B998000 KMCME0000M-B998000 Package 153FBGA 169FBGA 169FBGA 153FBGA 169FBGA 169FBGA 153FBGA 169FBGA 169FBGA Package Size 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.2t 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.2t 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.3t Comments For ordering information, refer to page 11. FLASH: FLEX-OneNAND A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables partitioning into SLC and MLC areas so the chip can be configured for storage or high-speed access. Density 4Gb 8Gb 16Gb NOTE: Org x16 x16 x16 Speed (MHz) Voltage(V) Part Number Package DDP DDP QDP Comments ES ES ES All parts are lead free DRAM: OneDRAM OneDRAM is a dual-port, low power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications. Density 512Mb NOTE: Org X16 Speed (MHz) 133MHz Voltage(V) Part Number Package Comments Coming Second Half 2007 All parts are lead free AUGUST 2007 BR-07-ALL-001 AUGUST 2007 23 MEMORY AND STORAGE Hard Disk Drives 3.5" HARD DISK DRIVES Family T1665 T1335 T133 S166S P120S P120 P80SD P80SD Capacity (GB) 500 500 320 320 400 400 300 400 300 160 120 80 80 40 40 250 250 250 200 160 120 80 160 160 120 120 80 RPM 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 Interface SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 PATA PATA SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 PATA PATA SATA-2 SATA-2 SATA-2 PATA PATA PATA PATA PATA Buffer 8 16 8 16 8 16 8 8 8 8 8 2 8 2 8 8 8 8 8 8 8 8 2 8 2 8 2 Model HD500LJ HD501LJ HD320KJ HD321KJ HD400LI HD401LI HD300LI HD400LD HD300LD HD161HJ HD120HJ HD081GJ HD082GJ HD041GJ HD042GJ SP2504C SP2004C SP2514N SP2014N HD160JJ HD120IJ HD080HJ SP1644N SP1654N SP1243N SP1253N SP0842N RPM 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 5400 Interface SATA SATA SATA SATA SATA SATA SATA SATA PATA PATA PATA SATA SATA SATA PATA PATA PATA SATA PATA Buffer 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 Model HM250JI HM160HI HM121HI HM080GI HM061GI HM160JI HM120II HM080HI HM160JC HM120IC HM080HC HM120JI HM100JI HM060HI HM120JC HM100JC HM060HC HM040HI MP0402H 2.5" HARD DISK DRIVES Family M5S M80S M80 M60S M60 M40S M40S 24 Capacity (GB) 250 160 120 80 60 160 120 80 160 120 80 120 100 60 120 100 60 40 40 SAMSUNG SEMICONDUCTOR, INC. BR-07-ALL-001 AUGUST 2007 MEMORY AND STORAGE 1.8" HARD DISK DRIVES Family N1 (3600rpm) N1 (4200rpm) AUGUST 2007 Capacity (GB) 60 60 40 40 30 30 20 20 60 60 40 40 30 30 20 20 RPM 3600 3600 3600 3600 3600 3600 3600 3600 4200 4200 4200 4200 4200 4200 4200 4200 Interface PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA BR-07-ALL-001 Buffer 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Model HS061HA HS061HP HS041HA HS041HP HS031GA HS031GP HS021GA HS021GP HS060HB HS060HQ HS040HB HS040HQ HS030GB HS030GQ HS020GB HS020GQ SAMSUNG SEMICONDUCTOR, INC. 25 MEMORY AND STORAGE Flash-Enabled Drives 2.5" HYBRID HARD DRIVES Family MH80S Capacity (GB) 160 120 80 RPM 5400 5400 5400 Interface SATA SATA SATA Buffer 8 8 8 Model HM16HJI HM12HII HM08HHI NAND-FLASH BASED SSD Capacity 4GB 8GB 16GB 32GB 4GB 8GB 16GB 32GB 64GB 8GB 16GB 32GB 26 Form Factor 2.5" 2.5" 2.5" 2.5" 1.8" 1.8" 1.8" 1.8" 1.8" Slim Card Module Slim Card Module Slim Card Module SAMSUNG SEMICONDUCTOR, INC. Idle Power 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W Part Number MC4GE04G5APP-0XA MC8DE08G5APP-0XA MC8DE16G5APP-0XA MCAQE32G5APP-0XA MC4GE04G8APR-0X MC8DE08G8APR-0XA MCAQE16G8APR-0XA MCBOE32G8APR-0XA BR-07-ALL-001 Noise 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB Interface ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 AUGUST 2007 Optical Storage Solutions MEMORY AND STORAGE EXTERNAL DVD DRIVES Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Burst Transfer Rate (Max) External DVD Writer SE-S184M External 163x50x232mm USB 2.0 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media Type MB/s Write MB/s DVD+R 24.3 18x 16.2 DVD+R DL 10.8 8x 10.8 DVD+RW 10.8 8x 10.8 DVD-R 24.3 18x 16.2 DVD-R DL 10.8 8x 10.8 DVD-RAM 21.6 12x 21.6 DVD-RW 8.1 6x 10.8 DVD-ROM 21.6 CD-ROM 7.2 CD-R 7.2 48x 6.0 CD-RW 7.2 32x 6.0 PIO Mode 16.6MB/s Ultra DMA Mode 2 33.3MB/s Read 12x 8x 8x 12x 8x 12x 8x 16x 48x 40x 40x Slot-in Slim External DVD Writer SE-T084L External, Slot-in, Slim 143x19x157mm USB 2.0 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 130ms Media Type MB/s Write MB/s DVD+R 10.8 8x 10.8 DVD+R DL 8.1 6x 10.8 DVD+RW 10.8 8x 10.8 DVD-R 10.8 8x 10.8 DVD-R DL 5.4 4x 10.8 DVD-RAM 6.75 5x 6.75 DVD-RW 8.1 6x 10.8 DVD-ROM 10.8 CD-ROM 3.6 CD-R 3.6 24x 3.6 CD-RW 3.6 24x 3.6 LightScribe V1.2 <20min Draft <20min Draft Full Labling Time <28min Normal <28min Normal <36min Best <36min Best Supported Disks Other DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R LightScribe DVDR / LightScribe CD-R RoHS Compliant Both 12cm and 8cm standard round discs supported Vertical Mount ing Supported Operates on either AC Adaptor or USB Power Read 8x 8x 8x 8x 8x 5x 8x 8x 24x 24x 24x Manual Disc Ejection in case of power loss AUGUST 2007 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 27 MEMORY AND STORAGE Optical Storage Solutions INTERNAL DVD DRIVES Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Burst Transfer Rate (Max) Internal DVD-ROM Drives SH-D163A/B SH-D162C Internal Internal 148.2x42x170mm 148.2x42x184mm S-ATA EIDE / ATAPI 198KB 256KB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD: 150ms DVD: 150ms CD: 130ms CD: 130ms Media Activity MB/s Read Media Activity MB/s Read Type Type DVD Read 21.6 48x DVD Read 21.6 48x CD Read 7.2 16x CD Read 7.2 16x Internal DVD Writer SH-S182D/M/F Internal 148.2x42x170mm EIDE / ATAPI 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media MB/sWrite MB/s Read Type DVD+R 24.3 18x 16.2 12x DVD+R DL 10.8 8x 10.8 8x DVD+R DL (SH-S128F) 10.8 10x 10.8 8x DVD+RW 10.8 8x 10.8 8x DVD-R 24.3 18x 16.2 12x DVD-R DL 10.8 8x 10.8 8x DVD-RAM 16.2 12x 16.2 12x DVD-RW 8.1 6x 10.8 8x DVD-ROM 21.6 16x CD-ROM 7.2 48x CD-R 7.2 48x 6.0 40x CD-RW 4.8 32x 6.0 40x S-ATA 1.5Gb/s PIO Mode 4 16.6MB/s PIO Mode 4 16.6MB/s DMA Mode 2 16.6MB/s Ultra DMA Mode 2 33.3MB/s Ultra DMA Mode 2 33.3MB/s LightScribe V1.2 Full Labling Time <20min Draft (SH-S128M only) <28min Normal (SH-S128M only) <36min Best (SH-S128M only) Supported Disks DVD+R / DVD+RW / DVD-RAM DVD+R / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R (SH-S128M only) Other 28 RoHS Compliant RoHS Compliant RoHS Compliant Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported Buffer Under Run Free Motorized Tray Motorized Tray MPEG II Card and Soft MPEG Compatible MPEG II Card and Soft MPEG Compatible SAMSUNG SEMICONDUCTOR, INC. BR-07-ALL-001 AUGUST 2007 Optical Storage Solutions MEMORY AND STORAGE INTERNAL DVD DRIVES Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Burst Transfer Rate (Max) 20x DVD Writer SH-S202G Internal 148.2x42x170mm EIDE / ATAPI 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media MB/s Write MB/s Read Type DVD+R 27.0 20x 21.6 16x DVD+R DL 16.2 12x 16.2 12x DVD+RW 10.8 8x 16.2 12x DVD-R 27.0 20x 21.6 16x DVD-R DL 16.2 12x 16.2 12x DVD-RAM 16.2 12x 16.2 12x DVD-RW 8.1 6x 16.2 12x DVD-ROM 21.6 12x CD-ROM 7.2 48x CD-R 7.2 48x 6.0 40x CD-RW 4.8 32x 6.0 40x Internal S-ATA DVD Writer SH-S183A/L Internal 148.2x42x170mm S-ATA 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media MB/s Write MB/s Read Type DVD+R 24.3 18x 16.2 12x DVD+R DL 10.8 8x 10.8 8x DVD+RW 10.8 8x 10.8 8x DVD-R 24.3 18x 16.2 12x DVD-R DL 10.8 8x 10.8 8x DVD-RAM 16.2 12x 21.6 12x DVD-RW 8.1 6x 10.8 8x DVD-ROM 21.6 16x CD-ROM 7.2 48x CD-R 7.2 48x 6.0 40x CD-RW 4.8 32x 6.0 40x 20x S-ATA DVD Writer SH-S203B Internal 148.2x42x170mm S-ATA 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media MB/s Write MB/s Read Type DVD+R 27.0 20x 21.6 16x DVD+R DL 21.6 16x 16.2 12x DVD+RW 10.8 8x 16.2 12x DVD-R 27.0 20x 21.6 16x DVD-R DL 16.2 12x 16.2 12x DVD-RAM 16.2 12x 16.2 12x DVD-RW 8.1 6x 16.2 12x DVD-ROM 21.6 16x CD-ROM 7.2 48x CD-R 7.2 48x 6.0 40x CD-RW 4.8 32x 6.0 40x PIO Mode 16.6MB/s S-ATA S-ATA Ultra DMA Mode 2 33.3MB/s LightScribe V1.2 Full Labling Time 1.5Gb/s 1.5Gb/s <20min Draft (SH-S183L only) <28min Normal (SH-S183L only) <36min Best (SH-S183L only) Supported Disks DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R (SH-S183L only) Other RoHS Compliant RoHS Compliant RoHS Compliant Buffer Under Run Free Buffer Under Run Free Buffer Under Run Free Motorized Tray Supports Mt. Rainier AUGUST 2007 BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 29 MEMORY AND STORAGE Optical Storage Solutions INTERNAL DVD DRIVES Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) SN-T082A/L Internal 128x12.7x129mm EIDE / ATAPI 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 110ms CD-ROM: 110ms Media MB/s Write MB/s Read Type DVD+R 10.8 8x 10.8 8x DVD+R DL 8.1 6x 10.8 8x DVD+RW 10.8 8x 10.8 8x DVD-R 10.8 8x 10.8 8x DVD-R DL 5.4 4x 10.8 8x DVD-RAM 6.75 5x 6.75 5x DVD-RW 8.1 6x 10.8 8x DVD-ROM 10.8 8x CD-ROM 3.6 24x CD-R 3.6 24x 3.6 24x CD-RW 3.6 24x 3.6 24x Slim DVD Writers SN-S082M Internal 128x12.7x129mm EIDE / ATAPI 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 110ms CD-ROM: 110ms Media MB/s Write MB/s Read Type DVD+R 10.8 8x 10.8 8x DVD+R DL 8.1 6x 10.8 8x DVD+RW 10.8 8x 10.8 8x DVD-R 10.8 8x 10.8 8x DVD-R DL 5.4 4x 10.8 8x DVD-RAM 6.75 5x 6.75 5x DVD-RW 8.1 6x 10.8 8x DVD-ROM 10.8 8x CD-ROM 3.6 24x CD-R 3.6 24x 3.6 24x CD-RW 3.6 24x 3.6 24x Burst Transfer Rate (Max) SN-S082D Internal 128x12.7x129mm EIDE / ATAPI 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 110ms CD-ROM: 110ms Media MB/s Write MB/s Read Type DVD+R 10.8 8x 10.8 8x DVD+R DL 8.1 6x 10.8 8x DVD+RW 10.8 8x 10.8 8x DVD-R 10.8 8x 10.8 8x DVD-R DL 5.4 4x 10.8 8x DVD-RAM 6.75 5x 6.75 5x DVD-RW 8.1 6x 10.8 8x DVD-ROM 10.8 8x CD-ROM 3.6 24x CD-R 3.6 24x 3.6 24x CD-RW 3.6 24x 3.6 24x PIO Mode 4 16.6MB/s DMA Mode 2 16.6MB/s Ultra DMA Mode 2 33.3MB/s LightScribe V1.2 Full Labling Time Supported Disks <20min Draft (SN-T082L only) <20min Draft <28min Normal (SN-T082L only) <28min Normal <36min Best (SN-T082L only) <36min Best DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R (SM-T082L only) LightScribe DVDR / LightScribe CD-R Other Slot-In Type Loader RoHS Compliant RoHS Compliant Supports disc buringin from USB BUS Power Buffer Under Run Free Buffer Under Run Free Both 12cm and 8cm round discs supported Drawer Type Tray Drawer Type Tray Manual Disc Ejection in case of power loss 30 SAMSUNG SEMICONDUCTOR, INC. BR-07-ALL-001 AUGUST 2007 Optical Storage Solutions MEMORY AND STORAGE INTERNAL COMBO DRIVES Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Burst Transfer Rate (Max) Supported Disks Other Internal Combo Slim Drive SN-M242D Internal 128x12.7x129mm EIDE / ATAPI 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB DVD: 120ms CD: 130ms Media Type Activity MB/s Read Internal Combo Drives SH-M523A/B SH-M522C Internal Internal 148.2x42x170mm 148.2x42x184mm S-ATA EIDE / ATAPI 2MB 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD: 150ms DVD: 150ms CD: 130ms CD: 130ms Media Type Activity MB/s Read Media Type Activity MB/s Read CD CD CD DVD CD CD CD DVD Record Rewrite Read Read PIO Mode 4 16.6MB/s DMA Mode 2 16.6MB/s Ultra DMA Mode 2 33.3MB/s 24x 24x 24x 8x Record Rewrite Read Read S-ATA DVD+R / DVD+RW / DVD-RAM 7.8 4.8 7.8 21.6 52x 32x 52x 16x 1.5Gb/s DVD+R / DVD+RW / DVD-RAM CD CD CD DVD Record Rewrite Read Read 7.8 4.8 7.8 21.6 PIO Mode 4 16.6MB/s DMA Mode 2 16.6MB/s Ultra DMA Mode 2 33.3MB/s 52x 32x 52x 16x DVD+R / DVD+RW / DVD-RAM DVD-R / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-I / CD-Extra / CD-Text CD-I / CD-Extra / CD-Text CD-I / CD-Extra / CD-Text RoHS Compliant RoHS Compliant RoHS Compliant Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported Drawer Type Tray Motorized Tray Motorized Tray Buffer Under Run Free AUGUST 2007 3.6 3.6 3.6 10.8 Buffer Under Run Free Buffer Under Run Free Supports Mt. Rainier Supports Mt. Rainier BR-07-ALL-001 SAMSUNG SEMICONDUCTOR, INC. 31 MEMORY AND STORAGE Optical Storage Solutions INTERNAL CD DRIVES Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Burst Transfer Rate (Max) Supported Disks Internal CD-ROM Drives SH-C523A SH-C522C Internal Internal 148.2x42x184mm 148.2x42x184mm S-ATA EIDE / ATAPI 96KB 96KB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer CD: 90ms CD: 90ms Media Type Activity MB/s Read Media Type Activity MB/s Read CD Read 7.8 52x CD Read 7.8 52x S-ATA 1.5Gb/s CD-ROM Slim Drive SN-C242C Internal 128x12.7x129mm EIDE / ATAPI 96KB CD-RW Type 80 700MB / CD-R Type 90 800MB CD: 130ms Media Type Activity MB/s Read CD Read 3.6 24x PIO Mode 4 16.6MB/s PIO Mode 4 16.6MB/s DMA Mode 2 16.6MB/s DMA Mode 2 16.6MB/s Ultra DMS Mode 2 33.3MB/s CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex DVD+R / DVD+RW / DVD-RAM / DCD-R DVD-ROM / DVD-Video / Video-CD / Photo CD CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-I / CD-Extra / CD-Text / CD-I / CD-Extra / CD-Text Other RoHS Compliant RoHS Compliant RoHS Compliant Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported Motorized Tray Motorized Tray Drawer Type Tray Optional Ultra DMA Burst Transfer 80mm and 120mm CD Disc Diameter INTERNAL CD DRIVES Internal CD-RW Drive Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Burst Transfer Rate Supported Disks Other 32 SH-R522C Internal 148.2x42x184mm EIDE / ATAPI 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB CD: 100ms Media Type Activity MB/s CD Record 7.8 CD Rewrite 4.8 CD Read 7.8 PIO Mode 4 16.6MB/s DMA Mode 2 16.6MB/s Ultra DMA Mode 2 33.3MB/s CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Text RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray Buffer Under Run Free Supports Mt. Rainier SAMSUNG SEMICONDUCTOR, INC. Read 52x 32x 52x BR-07-ALL-001 AUGUST 2007 Samsung offers the industry's broadest memory portfolio and has maintained its leadership in memory technology for 14 straight years. Its DRAM, flash and SRAM products are found in computers - from ultra-mobile portables to powerful servers - and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industry's widest line of storage products. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products. For more information, visit our website: www.usa.samsungsemi.com Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specifications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes. This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation any consequential or incidental damages. www.usa.samsungsemi.com Copyright 2007. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. All other names and brands may be claimed as the property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice. BR-07-ALL-001 Printed 8/07