Samsung Semiconductor, Inc.
Product Selection Guide
Memory and Storage
August 2007
MEMORY AND ST ORA GE
DRAM
DDR3 SDRAM
DDR2 SDRAM
DDR SDRAM
SDRAM
MOBILE SDRAM
RDRAM
GRAPHICS DDR SDRAM
DRAM ORDERING INFORMATION
FLASH
NAND FLASH
NAND FLASH ORDERING INFORMATION
ASYNCHRONOUS SRAM
HIGH DENSITY, LOW POWER (UtRAM)
HIGH-SPEED ASYNCHRONOUS FAST SRAM
ASYNCHRONOUS SRAM ORDERING INFORMATION
SYNCHRONOUS SRAM
SPB & FT SRAM
NtRAM
LATE-WRITE R-R SRAM
DDR / II / II+ SRAM
QDR / II / II+ SRAM
SYNCHRONOUS SRAM ORDERING INFORMATION
MULTI-CHIP PACKAGE
NAND/DRAM
NOR/SRAM and NOR/UtRAM
OneNAND/DRAM
NOR/DRAM
MOST COMMON MCPS
FUSION MEMORY
OneNAND™
moviNAND™
Flex-OneNAND™
OneDRAM™
HARD DRIVES
HARD DISK DRIVES
FLASH-ENABLED DRIVES
HYBRID HARD DRIVES
FLASH SOLID STATE DRIVES
EXTERNAL OPTICAL DRIVES
EXTERNAL DVD
INTERNAL OPTICAL DRIVES
INTERNAL DVD
INTERNAL COMBO
INTERNAL CD
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DDR2 SDRAM REGISTERED MODULES Parity
Density Org Speed (Mbps) Part Number Register Rank Composition Package
512MB 64Mx72 400/533/667 M393T6553EZA-C(CC/D5/E6) Y 1 (64M x8)*9 Lead-free
1GB 128Mx72 400/533 M393T2950EZ3-C(CC/D5) N 1 (128M x4)*18 Lead-free
1GB 128Mx72 400/533 M393T2953EZ3-C(CC/D5) N 2 (64M x8)*18 Lead-free
1GB 128Mx72 400/533/667 M393T2950EZA-C(CC/D5/E6) Y 1 (128M x4)*18 Lead-free
1GB 128Mx72 400/533/667 M393T2953EZA-C(CC/D5/E6) Y 2 (64M x8)*18 Lead-free
2GB 256Mx72 400/533 M393T5750EZ3-C(CC/D5) N 2 (128M x4)*36 Lead-free
2GB 256Mx72 400/533 M393T5660CZ3-C(CC/D5) N 1 (256M x4)*18 Lead-free
2GB 256Mx72 400/533 M393T5663CZ3-C(CC/D5) N 2 (128M x8)*18 Lead-free
2GB 256Mx72 400/533/667 M393T5750EZ3-C(CC/D5/E6) Y 2 (128M x4)*36 Lead-free
2GB 256Mx72 400/533/667 M393T5660CZA-C(CC/D5/E6) Y 1 (256M x4)*18 Lead-free
2GB 256Mx72 533/667 M393T5663CZA-C(D5/E6) Y 2 (128M x8)*18 Lead-free
4GB 512Mx72 400/533 M393T5160CZ0-C(CC/D5) N 2 st. (512M x4)*18 Lead-free
4GB 512Mx72 400/533/667 M393T5160CZA-C(CC/D5/E6) Y 2 st. (512M x4)*18 Lead-free
NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) D5=PC2-4200 (DDR2-533 @ CL=4) E6=PC2-5300 (DDR2-667 @ CL=5) Voltage:1.8V Module Height=1.2"
DDR2 SDRAM FULLY BUFFERED MODULES
Density Org Speed (Mbps) Part Number Rank Composition Package
512MB 64Mx72 533 M395T6553EZ4-CD5(50/60/20) 1 (64M x8)*9 Lead-free
512MB 64Mx72 667 M395T6553EZ4-CE6(50/60/20) 1 (64M x8)*9 Lead-free
1GB 128Mx72 533 M395T2953EZ4-CD5(50/60/20) 2 (64M x8)*18 Lead-free
1GB 128Mx72 667 M395T2953EZ4-CE6(50/60/20) 2 Lead-free
2GB 256Mx72 533 M395T5750EZ4-CD5(50/60/20) 2 Lead-free
2GB 256Mx72 667 M395T5750EZ4-CE6(50/60/20) 2 (128M x4)*36 Lead-free
4GB 512Mx72 533 M395T5160CZ4-CD5(50/60/20) 2 st. (512M x4)*18 Lead-free
4GB 512Mx72 533 M395T5160CZ4-CE6(50/60/20) 2 st. (512M x4)*18 Lead-free
NOTES: 50=Intel AMB 60: IDT AMB Voltage for AMB:1.5V Voltage for DRAM:1.8V Module Height=1.2" 20: NEC AMB
MEMORY AND ST ORA GE
3
DDR3 / DDR2 SDRAM
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
DDR3 SDRAM COMPONENTS Package
Density Org Speed (Mbps) Part Number Package Dimension
1Gb 256M x4 800/1066/1333 K4B1G0446C-ZC(F7/F8/H9) 94ball FBGA 11x18mm
1Gb 128M x8 800/1066/1333 K4B1G0846C-ZC(F7/F8/H9) 94ball FBGA 11x18mm
1Gb 64M x16 800/1066/1333 K4B1G1646C-ZC(F7/F8/H9) 112ball FBGA 11x18mm
NOTES: E7=DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) G9=DDR3-1333 (9-9-9) Voltage: 1.5V
DDR3 SDRAM UNBUFFERED MODULES
Density Org Speed (Mbps) Part Number Rank Composition Package
512MB 64Mx64 800/1066/1333 M378B6474CZ0-C(F7/F8/H9) 1 1Gb(64M x16) * 4 RoHS
1GB 128Mx64 800/1066/1333 M378B2873CZ0-C(F7/F8/H9) 1 1Gb(128M x8) * 8 RoHS
2GB 256Mx64 800/1066/1333 M378B5673CZ0-C(F7/F8/H9) 2 1Gb(128M x8) * 16 RoHS
NOTES: E7=DDR3-800 (5-5-5) F8 = DDR3-1066 (7-7-7) G9=DDR3-1333 (8-8-8) Voltage: 1.5V
DDR2 DRAM SODIMM MODULES
Density Org Speed (Mbps) Part Number Rank Composition Package
512MB 64Mx64 533/667 M470T6554EZ3-C(D5/E6) 2 (32M x16)*8 Lead-free
1GB 128Mx64 533/667 M470T2953EZ3-C(D5/E6) 2 (64M x8)*16 Lead-free
1GB 128Mx64 533/667 M470T2864DZ3-C(D5/E6) 2 (64M x16)*8 Lead-free
2GB 256Mx64 533/667 M470T5663CZ3-C(D5/E6) 2 st.(256M x8)*8 Lead-free
NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) D5 =PC2-4200 (DDR2-533 @ CL=4) E6=PC2-5300 (DDR2-667 @ CL=5) Voltage: 1.8V Module Height=1.2"
MEMORY AND ST ORA GE
4
DDR2 / DDR SDRAM
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007
BR-07-ALL-001
DDR SDRAM DIMM MODULES: UNBUFFERED
Density Org Speed (Mbps) Composition Part Number Notes
512MB 64MX64 333/400 (64M x8) *8 M368L6523DUS-CB3/CCC Pb-free
512MB 64Mx72 333/400 (64M x 8)*9 M381L6523DUM-CB3/CCC Pb-free
1GB 128Mx64 333/400 (64M x 8)*16 M368L2923DUN-CB3/CCC Pb-free
1GB 128Mx72 333/400 (64M x 8)*18 M381L2923DUM-CB3/CCC Pb-free
NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
Type: 184-pin Package:TSOP components Voltage: 2.5V
DDR SDRAM 1U DIMM MODULES: REGISTERED Component # Banks
Density Org Speed (Mbps) Composition Part Number Package Module Notes
512MB 64Mx72 333/400 (64Mx8)*9 M312L6523DZ3 - CB3/CCC FBGA 1 Pb-free
1GB 128Mx72 333/400 (128Mx4)*18 M312L2920DZ3 -CB3/CCC FBGA 1 Pb-free
2GB 256Mx72 333/400 (128Mx4)*36 M312L5720DZ3-CB3/CCC FBGA 2 Pb-free
NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
Type: 184-pin
DDR DRAM SODIMM MODULES
Density Org Speed (Mbps) Composition Part Number Notes
512MB 64Mx64 333 (32M x 16)*4 M470L6524DU0-CB300 Pb-free
1GB 128MX64 333 (64M x 8)*16 M470L2923BN0 - C(L)B3
1GB 128MX64 333 (64M x 8)*16 M470L2923DV0-CB300 Pb-free
NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
Type: 200-pin, Double Sided Height(in): 1.25
DDR2 SDRAM COMPONENTS Package
Density Org Speed (Mbps) Part Number Package Dimension
512Mb 128M x4 400/533/667 K4T51043QE-ZC(CC/D5/E6) 60ball FBGA 10x11mm
512Mb 64M x8 400/533/667/800 K4T51083QE-ZC(CC/D5/E6/E7) 60ball FBGA 10x11mm
512Mb 32M x16 400/533/667 K4T51163QE-ZC(CC/D5/E6) 84ball FBGA 11x13mm
1Gb 256M x4 533/667 K4T1G044QC-ZC(D5/E6) 68ball FBGA 11x18mm
1Gb 128M x8 533/667 K4T1G084QD-ZC(D5/E6) 68ball FBGA 11x18mm
1Gb 128M x8 533/667 K4T1G084QD-ZC(D5/E6) 68ball FBGA 11x18mm
1Gb 64M x16 533/667 K4T1G164QD-ZC(D5/E6) 84ball FBGA 11x18mm
NOTES: CC=DDR2-400 (3-3-3) D5 = DDR2-533 (4-4-4) E6=DDR2-667 (5-5-5) E7=DDR2-800 (5-5-5) Voltage: 1.8V
DDR2 SDRAM UNBUFFERED MODULES
Density Org Speed (Mbps) Part Number Rank Composition Package
512MB 64Mx64 533/667/800 M378T6553EZS-C(D5/E6/E7/F7) 1 (64M x8)*8 Lead-free
1GB 128Mx64 533/667/800 M378T2953EZ3-C(D5/E6/E7/F7) 2 (64M x8)*16 Lead-free
1GB 128MX72 533/667/800 M378T2863DZS-C(D5/E6/E7/F7) 1 (128MX8)*9 Lead-free
2GB 256Mx64 533/667 M378T5663DZ3-C(D5/E6) 2 (128M x8)*16 Lead-free
NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) D5 = PC2-4200 (DDR2-533 @ CL=4) E6=PC2-5300 (DDR2-667 @ CL=5) E7=PC2-6400 (DDR2-800 @ CL=5) Voltage: 1.8V
Module Height =1.2" F7=PC2-6400
5
DDR SDAM / SDRAM
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
DDR SDRAM COMPONENTS
Density Org Speed (Mbps) Part Number Package Notes
256M 64Mx4 266 K4H560438H-UC(L)B0 66 pin TSOP Pb-free
256M 64Mx4 333/400 K4H560438H-ZC(L)CC/B3 60 ball FBGA Pb-free
256M 32Mx8 333/400 K4H560838H-UC(L)B3/CCC 66 pin TSOP Pb-free
256M 32Mx8 333/400 K4H560838H-ZC(L)B3/CCC 60 ball FBGA Pb-free
256M 16Mx16 333/400 K4H561638H-UC(L)/B3/CCC 66 pin TSOP Pb-free
256M 16Mx16 333/400 K4H561638H-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 128Mx4 333/400 K4H510438D-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 128Mx4 333/400 K4H510438D-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 64Mx8 333/400 K4H510838D-UC(L)B3/CCC 66 pin TSOP Pb-free
512M 64Mx8 333/400 K4H510838D-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 64Mx8 333/400 K4H510838D-UC(L)B3/CCC 66 pin TSOP Pb-free
512M 32Mx16 333/400 K4H511638D-UC(L)B3/CCC 66 pin TSOP Pb-free
512M 32Mx16 333/400 K4H511638D-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 32Mx16 333/400 K4H511638D-UC(L)B3/CCC 66 pin TSOP Pb-free
NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
1U SDRAM DIMM MODULES, PC133 / PC100 COMPLIANT: REGISTERED
LOW-PROFILE DIMMs (1.2-INCH HEIGHT) # Banks
Density Org Speed Composition Part Number Module Refresh Remarks
128MB** 16Mx72 PC133 (16x8)*9 M390S1723TU - C7A00 1 4K
256MB 32Mx72 PC133 (32Mx8)*9 M390S3253HUU - C7A00 1 8K
512MB 64Mx72 PC133 (64Mx4)*18 M390S6450HUU - C7A00 2 8K stacked
1GB 128Mx72 PC133 (St.128Mx4)*18 M390S2858ETU - C7A00 2 8K
1GB 128Mx72 PC133 (128Mx4)*18 M390S2950DUU - C7A00 2 8K
2GB 256Mx72 PC133 (St.128Mx4)*18 M390S5658DUU - C7A00 2 8K
NOTES: St.= Stacked components Type: 168 pin, Double sided Package:TSOP Components Voltage: 3.3V stacked, avail Q204
SDRAM SODIMM MODULES Height # Banks
Density Org Speed Composition Part Number (in) Module
128MB 16Mx64 PC133 (8Mx16)*8 M464S1724ITS-L7A00 1.15 1
256MB 32Mx64 PC133 (16Mx16)*8 M464S3254HUS-L7A00 1.25 1
256MB 32Mx64 PC133 (32Mx16)*4 M464S3354DUS-C(L)7A 1.25 1
512MB 64Mx64 PC133 (32Mx16)*8 M464S6554DUS-C(L)7A 1.18 1
512MB 64Mx64 PC133 (64Mx8)*16 M464S6453HV0-C75/L7500 1.25 2
NOTES: DS = Double-Sided L = Commercial Temp., Low Power Interface: SSTL-2 # Banks: 4 Latency: CL6 Refresh: 8K/32ms
SDRAM DIMM MODULES, PC133 COMPLIANT: UNBUFFERED # Banks
Density Org Speed (Mbps) Composition Part Number Module
128MB 16Mx72 PC133 128M: (16Mx8)*9 M374S1723KUS-C7A00 1
256MB 32Mx64 PC133 256M: (16Mx8)*16 M366S3323KUS- C7A00 2
256MB 32Mx72 PC133 256M: (16Mx8)*18 M374S3323KUS-C7A00 2
256MB 32Mx64 PC133 256M: (32Mx8)*8 M366S3253HUS-C7A00 1
256MB 32Mx64 PC133 256M: (32Mx8)*8 M366S3253HUS-C7A00 1
512MB 64Mx64 PC133 256M: (32Mx8)*16 M366S6453HUS-C7A00 2
1GB 128Mx64 PC133 512M: (64Mx8)*16 M366S2953DUS-C7A00 2
NOTES: Type: 168 pin Package:TSOP components Voltage: 3.3V
MEMORY AND ST ORA GE
6
SDRAM / MOBILE SDRAM
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007
BR-07-ALL-001
SDRAM COMPONENTS
Density Org Speed (Mbps) Part Number Refresh Pkg TSOP Remarks
64Mb** 8Mx8 133 K4S640832K-UC(75)000 4K 54
64Mb** 4Mx16 133/143/166 K4S641632K-UC(L)(75/60)000 4K 54
128Mb** 16Mx8 133 K4S280832I-UC(L)(75)000 4K 54
128Mb** 8Mx16 133/166 K4S281632I-UC(L)(75/60)000 4K 54
256Mb 64Mx4 133 K4S560432H-UC(L)(75)000 8K 54
256Mb 32Mx8 133 K4S560832H-UC(L)(75)000 8K 54
256Mb 16Mx16 133/166 K4S561632H-UC(L)(75/60)000 8K 54
512Mb 128Mx4 133 K4S510632D-UC(L)(75)000 8K 54 stacked
512Mb 64Mx8 133 K4S510732D-UC(L)(75)000 8K 54 stacked
512Mb 128Mx4 133 K4S510432D-UC(L)(75)000 8K 54
512Mb 64Mx8 133 K4S510832D-UC(L)(75)000 8K 54
512Mb 32Mx16 133 K4S511632D-UC(L)(75)000 8K 54
NOTES:
1 L = Commercial Temp.,Low Power
2 # Banks: 4 3 Package:TC = TSOP; UC = Lead Free
4 Voltage: 3.3V 5 Speed: PC133 (133MHz CL=3/PC100 CL2)
6 For Ind.Temp., check with SSI Marketing
MOBILE SDRAM COMPONENTS # Pins
Density Org Part Number Refresh Power TSOP/BGA
64Mb 4Mx16 K4M641633K-(1)(2)(3)(4) 4K 3.0V FBGA-54balls
64Mb 4Mx16 K4M64163LK-(1)(2)(3)(4) 4K 2.5V FBGA-54balls
64Mb 4Mx16 K4M64163PK-(1)(2)(3)(4) 4K 1.8V FBGA-54balls
128Mb 8MX16 K4M281633H-(1)(2)(3)(4) 4K 3.0V FBGA-54balls
128Mb 8MX16 K4M28163LH-(1)(2)(3)(4) 4K 2.5V FBGA-54balls
128Mb 8MX16 K4M28163PH-(1)(2)(3)(4) 4K 1.8V FBGA-54balls
128Mb 4MX32 K4M283233H-(1)(2)(3)(4) 4K 3.0V FBGA-90balls
128Mb 4MX32 K4M28323LH-(1)(2)(3)(4) 4K 2.5V FBGA-90balls
128Mb 4MX32 K4M28323PH-(1)(2)(3)(4) 4K 1.8V FBGA-90balls
256Mb 16Mx16 K4M561633G-(1)(2)(3)(4) 8K 3.0V FBGA-54balls
256Mb 16Mx16 K4M56163LG-(1)(2)(3)(4) 8K 2.5V FBGA-54balls
256Mb 16Mx16 K4M56163PG-(1)(2)(3)(4) 8K 1.8V FBGA-54balls
256Mb 16Mx16 K4X56163PG-(1)(2)(3)(4) 8K 1.8V FBGA-60balls
256Mb 8Mx32 K4M563233G-(1)(2)(3)(4) 8K 3.0V FBGA-90balls
256Mb 8Mx32 K4M56323LG-(1)(2)(3)(4) 8K 2.5V FBGA-90balls
256Mb 8Mx32 K4M56323PG-(1)(2)(3)(4) 8K 1.8V FBGA-90balls
256Mb 8Mx32 K4X56323PG-(1)(2)(3)(4) 8K 1.8V FBGA-90balls
512Mb 32Mx16 K4M511633E-(1)(2)(3)(4) 8K 3.0V FBGA-54balls
512Mb 32Mx16 K4M51163LE-(1)(2)(3)(4) 8K 2.5V FBGA-54balls
512Mb 32Mx16 K4M51163PE-(1)(2)(3)(4) 8K 1.8V FBGA-54balls
512Mb 32Mx16 K4X51163PE-(1)(2)(3)(4) 8K 1.8V FBGA-60balls
512Mb 16Mx32 K4M513233E-(1)(2)(3)(4) 8K 3.0V FBGA-90balls
512Mb 16Mx32 K4M51323LE-(1)(2)(3)(4) 8K 2.5V FBGA-90balls
512Mb 16Mx32 K4M51323PE-(1)(2)(3)(4) 8K 1.8V FBGA-54balls
512Mb 16Mx32 K4X51323PE-(1)(2)(3)(4) 8K 1.8V FBGA-54balls
S/D: 90balls FBGA
Monolithic (11mm x 13mm)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
M/E: 90balls FBGA DDP
(2) Temp & Power:
C: Commercial (-25 ~ 70’C), Normal
L: Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR &
PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial (-40~85’C), Normal
P: Industrial, Low
H: Industrial, Low, i-TCSR &
PASR & DS PASR & TCSR
(3)~(4) Speed:
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
NOTES:
(1) Package: Leaded / Lead Free
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X /Z: 54balls BOC Mono
J /V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch
MEMORY AND ST ORA GE
7
RDRAM / GRAPHICS MEMORY
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
RIMM™MODULES
Density Org Speed (Mbps) # of Devices Part Number Component
128MB ECC x18 800/1066Mbps 4 MR18R1624EG0-CM8/T9 288Mb
256MB ECC x18 800/1066Mbps 8 MR18R1628EG0-CM8/T9 288Mb
512MB ECC x18 800/1066Mbps 16 MR18R162GEG0-CM8/T9 288Mb
128MB NON-ECC x16 800/1066Mbps 4 MR16R1624EG0-CM8/T9 256Mb
256MB NON-ECC x16 800/1066Mbps 8 MR16R1628EG0-CM8/T9 256Mb
RDRAM COMPONENTS
Density Org Speed (Mbps) Part Number Refresh Package
288Mb x18 800/1066 K4R881869E-GCM8/T9 16K/32ms 92ball FBGA
128Mb * x16 800/1066 K4R271669F-SCK8/S8 16K/32ms 54ball FBGA
NOTES: Voltage:2.5 v
GRAPHICS MEMORY SELECTION GUIDE
Type Density Org Part Number Package VDD/VDDQ Speed Bin (MHz)
GDDR4 512Mb 16Mx32 K4U52324Q 136 FBGA* 1.8/1.8V 1100/1200/1400
1.95/1.95V 1600 CS
GDDR3 512Mb 16Mx32 K4J52324Q 136 FBGA* 1.8/1.8V 700/800
1.9/1.9V 900/1000/1200
256Mb 8Mx32 K4J55323Q 136 FBGA 1.8/1.8V 700/800/
1.9/1.9V 900/1000
GDDR2 512Mb 32Mx16 K4N51163Q 84 FBGA 1.8/1.8V 350/400
1.9/1.9V 450/500
256Mb 16Mx16 K4N56163Q 84 FBGA 1.8/1.8V 350/400/450/500
GDDR1 256Mb 16Mx16 K4D551638 66 TSOPII 2.5/2.5V 200/250
128Mb 4Mx32 K4D263238 144 FBGA 2.5/2.5V 200/250
8Mx16 K4D261638 66 TSOPII 2.5/2.5V 200/250
NOTES: *lead free only * clock cycle time ** all products are 4 banks
Part No.Suffix 07 08 09 1A 11 12 14 16 20 22 25 2A 33 40 50
Description 0.71ns 0.83ns 0.90ns 1ns 1.11ns 1.25ns 1.429ns 1.667ns 2.0 ns 2.2 ns 2.5 ns 2.86 NS 3.3 ns 4.0 ns 5.0 ns
(1400MHz)(1200MHz)(1100MHz) (1000MHz) (900MHz) (800MHz) (700MHz) (600MHz) (500MHz) (450MHz) (400MHz) (350MHz) (300MHZ)(250MHz) (200MHz)
Product chart for fusion memory solution, OneDRAM, is on page 23.
MEMORY AND ST ORA GE
8
DRAM Ordering Information
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2. DRAM:4
3. Small Classification
A:Advanced Dram Technology
B:DDR3 SDRAM
D: DDR SGRAM
E: EDO
F: FP
H: DDR SDRAM
J: GDDR3 SDRAM
K: Mobile SDRAM PEA
L: Mobile L2RAM
M: Mobile SDRAM
N: DDR SGRAM II
R: Direct RDRAM
S: SDRAM
T: DDR SDRAM II∫
U: GDDR4 SDRAM
V: Mobile DDR SDRAM PEA
X: Mobile DDR SDRAM
Y: XDR DRAM
Z:Value Added DRAM
°∞PEA: Power Efficient Address
4~5. Density, Refresh
111: 1G, 64K/16ms
15: 16M, 1K/16ms
16: 16M, 2K/32ms
17: 16M, 4K/64ms
26: 128M, 4K/32ms
27: 128M, 16K/32ms
28: 128M, 4K/64ms
32: 32M, 2K/32ms
40: 4M, 512/8ms
41: 4M, 1K/16ms
44: 144M, 16K/32ms
50: 512M, 32K/16ms
51: 512M, 8K/64ms
52: 512M, 8K/32ms
54: 256M, 16K/16ms
55: 256M, 4K/32ms
56: 256M, 8K/64ms
57: 256M, 16K/32ms
58: 256M, 8K/32ms
62: 64M, 2K/16ms
64: 64M, 4K/64ms
66: 64M, 8K/64ms
68: 768M, 8K/64ms
72: 72M, 8K/32ms
76: 576M, 32K/32ms
80: 8M, 2K/32ms
88: 288M, 16K/32ms
89: 288M, 8K/32ms
1G: 1G, 8K/64ms
2G: 2G, 8K/64ms
4G: 4G, 8K/64ms
2A: 128M, 4K/64ms with TCSR
5A: 256M, 8K/64ms with TCSR
6A: 64M, 4K/64ms with TCSR
6~7. Organization
01: x1 02: x2 03:x2
(Including x1)
04: x4 05: x4 (2CS)
06: x4 Stack (Flexframe)
07: x8 Stack (Flexframe)
08: x8 09: x9 15: x16 (2CS)
16: x16 17: x16 (Including x8/ x4)
18: x18 30: x32 (2CS, 2CKE)
31: x32 (2CS) 32: x32 36: x36
A8: x8 Stack (70-mono)
8. Bank
1: 1Bank 2: 2Bank 3: 4Bank
4: 8Bank 5: 16Bank 6: 32Bank
9. Interface,VDD,VDDQ
0: NONE, NONE, NONE
1:TTL, 5.0V, 5.0V
2: LVTTL, 3.3V, 3.3V
3: LVTTL, 3.0V, 3.0V
4: LVTTL, 2.5V, 2.5V
5: SSTL(LP), 1.8V, 1.8V
6: SSTL, 1.5V, 1.5V
7: SSTL-2, 3.3V, 2.5V
8: SSTL-2, 2.5V, 2.5V
9: RSL, 2.5V, 2.5V
A: SSTL, 2.5V, 1.8V
H: SSTL-2 DLL, 3.3V, 2.5V
J: LVTTL, 3.0V, 1.8V
L: LVTTL, 2.5V, 1.8V
M: LVTTL, 1.8V, 1.5V
N: LVTTL, 1.5V, 1.5V
P: LVTTL, 1.8V, 1.8V
Q: SSTL, 1.8V, 1.8V
R: SSTL-2, 2.8V, 2.8V
S: SSTL-2, 2.2V, 1.8V
U: DRSL, 1.8V, 1.2V
Y: SSTL(LP), 2.5V, 2.5V
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
E: 6th Generation
F: 7th Generation
G: 8th Generation
H: 9th Generation
I: 10th Generation
J: 11th Generation
K: 12th Generation
Y: Partial DRAM(2nd)
Z: Partial DRAM (for RAMOSTAK Product)
11.“ ----”
12. Package
- Advanced DRAM Technology
G:WBGA L:TSOP2-400F(LF)
T:TSOP2 Z: BOC(LF)
- DDR SDRAM
J:TSOP2-400(LF, DDP) T:TSOP2-400
K:TSOP2-400(DDP) U:TSOP2-400(LF)
G: BOC,WBGA Z: BOC(LF)
P: BOC(DDP) Q: ISM
N: STSOP2 V:STSOP2(LF)
S: POP(DDP) X: POP(LF, DDP)
- DDR SDRAM II
G: BOC Z: BOC(LF)
S: BOC(Smaller) Y:BOC(Smaller, LF)
R:WLP
- DDR3 SDRAM
G: BOC Z: BOC(LF)
- DDR SGRAM
E: FBGA(LF, DDP) G : FBGA
J: FBGA(DDP) V:FBGA(LF)
P: FBGA(LLDDP) M: FBGA(1DQS)
N: FBGA(1DQS,LF) H: BOC
L:TSOP2-400(LF) T:TSOP2-400
Q:TQFP U:TQFP(LF)
MEMORY AND ST ORA GE
9
DRAM Ordering Information
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
- DDR SGRAM II
G: FBGA, BOC Z: BOC (LF)
- GDDR3 SDRAM
A: 136-FBGA, BOC B:136-FBGA, BOC(LF)
G: FBGA, BOC V:FBGA, BOC(LF)
- Direct RDRAM
F:WBGA G:WBGA(LF)3)
H:WBGA(LF, B/ L 320) J: MWBGA(LF)
M: µBGA®packages1) (M)2)
N: µBGA®packages
P: MWBGA R: 54-WBGA
S: 54-µBGA®packages T: 54-WBGA(LF)
- EDO
B: SOJ-300 J: SOJ-400
N: STSOP2
T:TSOP2-400 U:TSOP2-400(LF)
F:TSOP2-300 H:TSOP2-300(LF)
- FP
B: SOJ-300 J: SOJ-400
F:TSOP2-300 H:TSOP2-300(LF)
N: STSOP2
T:TSOP2-400 U:TSOP2-400(LF)
- Mobile SDRAM
1: MCP 6: MCP(LF)
2: 90-FBGA(DDP) 3: 90-FBGA(DDP,LF)
4: 96-FBGA 5: 96-FBGA(LF)
R: 54-CSP B: 54-CSP(LF)
J:WBGA V:WBGA(LF)
M: FBGA(MCP) E: FBGA(LF, MCP)
F: Smaller 90 FBGA
H: Smaller 90 FBGA(LF)
Y: 54-CSP(DDP) P: 54-CSP(LF,DDP)
T:TSOP2-400 Q: ISM
S: 90-FBGA D: 90-FBGA(LF)
Mobile SDRAM PEA
F: Smaller 90-FBGA
H: Smaller 90-FBGA(LF)
S: 90-FBGA D: 90-FBGA(LF)
Mobile DDR SDRAM
1: MCP 6: MCP(LF)
4: 96-FBGA 5: 96-FBGA(LF)
7: 90-FBGA 8: 90-FBGA(LF)
F:WBGA(LF, 0.8MM) J:WBGA
L:WBGA(0.8MM) T:TSOP2
V:WBGA(LF) Q: ISM
S: POP X: POP(LF, DDP)
Mobile DDR SDRAM PEA
6: POP MONO(LF) 7: 90-FBGA
8: 90-FBGA(LF) F: 60-FBGA(LF)
L: 60-FBGA Q: ISM
S: POP(DDP) X: POP(LF, DDP)
XDR DRAM
J: BOC(LF) P: BOC
SDRAM
1: MCP 2: 90-FBGA(DDP)
3: 90-FBGA(DDP, LF) 4: 96-FBGA
5: 96-FBGA(LF) A: 52-CSP(LF)
G: CSP(except 54 Pin) R: 54-CSP
B: 54-CSP(LF) D: 90-FBGA(LF)
E: 90-FBGA (LF, MCP) S: 90-FBGA
M: 90-FBGA(MCP) F: Smaller 90FBGA
H: Smaller 90FBGA(LF) K:TSOP2-400(DDP)
N: STSOP2 V:STSOP2(LF)
T:TSOP2-400 U:TSOP2-400(LF)
Y: 54-CSP(DDP) P: 54-CSP(LF,DDP)
X: BOC Z: BOC(LF)
DRAM COMMON
C: CHIP BIZ W:WAFER
(M): Mirror (LF): Lead Free
13.Temp, Power
- COMMON (Temp, Power)
0: NONE, NONE
A:Automotive, Normal
C: Commercial, Normal
J: Commercial, Medium
L: Commercial, Low
F: Commercial, Low,PASR & TCSR
B: Commercial, Super Low
R: Commercial, Super Low,PASR & TCSR
K: Commercial, Reduced
E: Extended, Normal
N: Extended, Low
G: Extended, Low,PASR & TCSR
U: Extended, Super Low
S: Extended, Super Low,PASR & TCSR
X: Extra Extend, Normal
I: Industrial, Normal
P: Industrial, Low
H: Industrial, Low,PASR & TCSR
D: Industrial, Super Low
T: Industrial, Super Low, PASR & TCSR
- WAFER,CHIP BIZ Level Classification
0: NONE, NONE
1: DC test only
2: DC test,WBI
3: DC, several AC test,WBI
14~15. Speed (Wafer/Chip Biz/BGD: 00)
- DDR SDRAM
A0: 10ns@CL2 A1: 8ns
A2: 7.5ns@CL2
AA :7.5ns@CL2,TRCD2,TRP2
B0: 7.5ns@CL2.5 B3: 6ns@CL2.5
B4: 5ns@CL2.5 C3: 6ns@CL3
C4: 5ns@CL3 C5: 3.75ns@CL3
CA: 5.5ns@CL3
CC: 5ns@CL3,TRCD3,TRP3 CD: 4ns@CL3
CE: 5ns@CL3,TRCD3, TRPS3(2.5V)
D4: 5ns@CL4 DS: Daisychain
M0: 10ns@CL1.5
<Only DDR SDRAM TPB code>
S0: SH BIN(TPB) V0:SH 2/ 2/ 2 BIN
W0: SH 3/ 3/ 3 BIN X0: Uniq. BIN
Y0: SH 3/ 4/ 4 BIN
- DDR SDRAM II
C4: 5ns@CL3 C5: 3.75ns@CL3
CC: 5ns@CL3,TRCD3,TRP3
CF: 3.75ns@CL3(1.9V)
D4: 5ns@CL4 D5: 3.75ns@CL4
D6: 3.0ns@CL4 D7: 2.5ns@CL4
DH: 3ns@CL4(1.9V)
DS: Daisychain Sample E4: 5ns@CL5
E5: 3.75ns@CL5 E6: 3.0ns@CL5
E7: 2.5ns@CL5 F6: 3.0ns@CL6
F7: 2.5ns@CL6
- DDR3 SDRAM
E7: 2.5ns@CL5 F6: 3.0ns@CL6
F7: 2.5ns@CL6
MEMORY AND ST ORA GE
10
DRAM Ordering Information
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
- EDO & FP (tRAC)
40: 40ns 45: 45ns
50: 50ns 60: 60ns
- Direct RDRAM (tCC, tRAC)
C6: 300MHz, 53.3ns w/ consumer PKG
C8: 400MHz, 45ns w/ consumer PKG
C9: 533MHz, 32ns w/ consumer PKG
G6: 300MHz(3.3ns), 53.3ns
K7: 356MHz(2.8ns), 45ns
K8: 400MHz(2.5ns), 45ns
M8: 400MHz(2.5ns), 40ns
M9: 533MHz(1.9ns), 35ns
N1: 600MHz(1.667ns), 32ns
N9: 533MHz(1.9ns), 32ns
P3: 667Mhz(1.5ns), 31ns
R6: 800Mhz(1.25ns), 27ns
S8: 400MHz, 45ns SC
S9: 533MHz(1.9ns), 35ns SC
T9: 533MHz(1.9ns), 32ns,tDAC 3
DS: Daisychain Sample
*SC (Short channel)
- Mobile SDRAM
15: 15ns@CL2 1H: 10ns@CL2
1L: 10ns@CL3 75: 7.5ns@CL3
80: 8ns@CL3
90: 9.0ns@CL3(12ns@CL2)
95: 9.5ns@CL3(12ns@CL2)
DP: Daisychain (PCB)
DS: Daisychain Sample
DY: Daisychain (Sanyo PCB)
- Mobile SDRAM PEA
1L: 10ns@CL3 60: 6ns@CL3
75: 7.5ns@CL3
90: 9.0ns@CL3(12ns@CL2)
- Mobile DDR SDRAM
C0: 15ns@CL3 C2: 10ns@CL3
C3: 7.5ns@CL3 C6: 6ns@CL3
CA: 9ns@CL3
DP: Daisychain (PCB)
DS: Daisychain
DY: Daisychain (Sanyo PCB)
- Mobile DDR SDRAM PEA
C3: 7.5ns@CL3 C6: 6ns@CL3
CA: 9ns@CL3
- Mobile L2RAM
L0: 100Mhz, CL3 L1: 133Mhz, CL3
L2: 166Mhz, CL4
- SDRAM (tCC: Default CL3)
10: 10ns, PC66 12: 12ns
15: 15ns
1H: 10ns@CL2, PC100 1L: 10ns,PC100
33: 3.3ns 40: 4ns
45: 4.5ns 50: 5ns
55: 5.5ns 56: 5.6ns
60: 6ns 67: 6.7ns
70: 7ns 74: 7.4ns
75: 7.5ns, PC133
7B: 7.5ns PC133, CL3,TRCD2,TRP2
7C: 7.5ns PC133, CL2,TRCD2,TRP2
80: 8ns 90: 9ns
96: 9.6ns
DP: Daisychain (PCB) DS: Daisychain
DY: Daisychain (Sanyo PCB)
< Only SDRAM TPB Code >
S0: 7.0ns BIN T0: 5.5ns BIN
U0: 6.0ns BIN V0: 7.5ns BIN
W0: 8.0ns BIN G0: 5.6ns BIN
-DDR SGRAM (tCC: Default CL3)
20: 2.0ns 21: 2.1ns(475MHz)
22: 2.2ns(450MHz) 25: 2.5ns
30: 3ns 33: 3.3ns
35: 3.5ns 36: 3.6ns
3N 3.32ns(301MHz) 40: 4ns
45: 4.5ns 50: 5ns
55: 5.5ns 60: 6ns
70: 7ns 2A: 2.86ns(350MHz)
2B: 2.94ns(340MHz) 2C: 2.66ns(375MHz)
5A: 5ns@CL3(TRCD3,TRP3)
< Only SDRAM TPB Code>
S0: 4.0ns BIN
- DDR SGRAM II
12: 1.25ns 14: 1.429ns
15: 1.5ns (667MHz) 16: 1.667ns
18: 1.818ns 1K: 1.996ns
2A: 2.86ns(350MHz) 20: 2ns
22: 2.2ns 25: 2.5ns
30: 3.0ns 33: 3.3ns
37: 3.75ns
- GDDR3 SDRAM
11: 1.1ns 12: 1.25ns
14: 1.429ns 15: 1.5ns(667MHz)
16: 1.667ns 18: 1.818ns
20: 2.0ns 22: 2.2ns
25: 2.5ns 30: 3.0ns
33: 3.3ns 36: 3.6ns
40: 4.0ns 1A: 1.0ns
2A: 2.86ns
- GDDR4 SDRAM
15: 1.5ns(667MHz)
XDR DRAM
A2: 2.4Gbps, 36ns, 16Cycles
A3: 3.2Gbps, 27ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
B4: 4.0Gbps, 28ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
DRAM COMMON
00: NONE
16. Packing Type (16 digit)
Common to all products, except of Mask ROM
Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray,Tube, Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
NOTES:
1) µgBGA® packages are registered trademarks of Tessera.
2) (M): Mirror
3) (LF): Lead Free
MEMORY AND ST ORA GE
11
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
NAND Flash
NAND FLASH DISCRETE COMPONENTS
Density Part Number Organization Voltage(V) Package Comments
SLC NAND
256Mb K9F5608x0D-PCB x8 1.8V; 3.3V TSOP48
256Mb K9F5608x0D-JIB x8 1.8V; 3.3V BGA63
512Mb K9F1208x0C-PCB x8 1.8V; 3.3V TSOP48
512Mb K9F1208x0C-JIB x8 1.8V; 3.3V BGA63
1Gb K9F1G08U0B-PCB x8 3.3V TSOP48
1Gb K9F1G08R0B-JIB x8 1.8V BGA63
2Gb K9F2G08U0A-PCB x8 3.3V TSOP48
2Gb K9F2G08R0A-JIB x8 1.8V BGA63
4Gb K9F4G08U0A-PCB x8 3.3V TSOP48
8Gb K9K8G08U0A-PCB x8 3.3V TSOP48 DDP
16Gb K9WAG08U1A-PCB x8 3.3V TSOP48 QDP
32Gb K9NBG08U5A-PCB x8 3.3V TSOP48 DSP
MLC NAND
8Gb K9G8G08U0M-PCB x8 3.3V TSOP48 mono;moving to A-die
16Gb K9LAG08U0M-PCB x8 3.3V TSOP48 DDP
32Gb K9HBG08U1M-PCB x8 3.3V TSOP48 QDP
64Gb K9MCG08U5M-PCB x8 3.3V TSOP48 DSP
Product charts for flash fusion memory products – OneNAND, moviNAND and Flex-OneNAND – are located on page 23.
MEMORY AND ST ORA GE
AUGUST 2007BR-07-ALL-001
12
NAND Flash Ordering Information
SAMSUNG SEMICONDUCTOR, INC.
NAND FLASH ORDERING INFORMATION
K 9 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2. NAND Flash: 9
3. Small Classification (SLC: Single Level Cell, MLC:
Multi Level Cell, SM: SmartMedia, S/B: Small Block)
A: SLC + Muxed I/F Chip
B: Muxed I/F Chip
S: SLC Single SM
D: SLC Dual SM
Q: 4CHIP SM
T: SLC SINGLE (S/B)
E: SLC DUAL (S/B)
R: SLC 4DIE STACK (S/B)
F: SLC Normal
G: MLC Normal
K: SLC 2-Die Stack
W:SLC 4-Die Stack
J: Non-Muxed OneNAND
U: 2 STACK MSP
V: 4 STACK MSP
4~5. Density
12: 512M 16: 16M
28: 128M 32: 32M
40: 4M 56: 256M
64: 64M 80: 8M
1G: 1G 2G: 2G
4G: 4G 8G: 8G
00: NONE
6~7. Organization
00: NONE 08: x8
16: x16
8.Vcc
C: 5.0V(4.5V~5.5V)
D: 2.65V(2.4V~2.9V)
E: 2.3V~3.6V
Q: 1.8V(1.7V~1.95V)
T: 2.4V~3.0V
U: 2.7V~3.6V
V: 3.3V(3.0V~3.6V)
W:2.7V~5.5V,3.0V~5.5V
0: NONE
9. Mode
O: Normal
1: Dual nCE & Dual Rn/B
4: Quad nCE & Single RnB
A: Mask Option 1
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
Y: Partial NAND(2nd)
Z: Partial NAND(1st)
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
Y: Partial NAND(2nd)
Z: Partial NAND(1st)
11.“--”
12. Package
A: COB B:TBGA
C: CHIP BIZ D: 63-TBGA
E:TSOP1(LF,1217) F:WSOP1(LF)
G: FBGA H:TBGA(LF)
J: FBGA(LF) K:TSOP1(1217)
L: LGA M: tLGA
P:TSOP1(LF) Q:TSOP2(LF)
R:TSOP2-R S: SMARTMEDIA
T:TSOP2 V:WSOP
W:WAFER Y:TSOP1
13.Temp
C: Commercial I: Industrial
0: NONE
14. Bad Block
B: Include Bad Block
D: Daisychain Sample
L: 1~5 Bad Block
N: Ini.All Good,Add. 10 Blocks
S:All Good Block
0: NONE
15. NAND-Reserved
0: Reserved
16. Packing Type (16 digit)
Common to all products, except of Mask ROM
Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray,Tube, Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
MEMORY AND ST ORA GE
13
Asynchronous SRAM
SAMSUNG SEMICONDUCTOR, INC.
HIGH-SPEED (4Mbit) ASYNCHRONOUS FAST SRAM
Operating Operating Standby Production
Density Part Number Organization Vcc (V) Speed (ns) Temp Current (mA) Current (uA) Package Status
4Mbit K6R4016C1D 256Kx16 5 10 I 65,55 20,5 44SOJ,44TSOP2,48TBGA Mass Production
K6R4016V1D 256Kx16 3.3 10 I 80, 65 20, 5(1.2) 44SOJ,44TSOP2,48TBGA Mass Production
K6R4008C1D 512Kx8 5 10 I 65, 55 20,5 36 SOJ,44 TSOP2 Mass Production
K6R4008V1D 512Kx8 3.3 10 I 80, 65 20,5 36 SOJ,44 TSOP2 Mass Production
NOTE: Ordering Information: http://www.samsung.com/Products/Semiconductor/Support/Label_CodeInfo/Async_SRAM.pdf
UtRAM (High Density & Low Power) Operating Operating Standby Production
Density Part Number Organization Vcc (V) Speed (ns) Temp Current (mA) Current (uA) Package Status
32Mbit K1S321611C 2Mx16 3 70 I 35 100 48-FBGA Mass Production
K1S32161CD 2Mx16 3 70 I 35 100 48-FBGA Mass Production
K1S32161BCD 2Mx16 1.8 70 I 35 100 48-FBGA Mass Production
K1S32161CD 2Mx16 3 70 E 35 100 48-TBGA Mass Production
AUGUST 2007 BR-07-ALL-001
MEMORY AND ST ORA GE
14
Asynchronous SRAM
Ordering Information
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
ASYNCHRONOUS SRAM ORDERING INFORMATION
K 6 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2.Async SRAM: 6
3. Small Classification
E: Corner Vcc/Vss + Fast SRAM
F: fCMOS Cell + LPSRAM
H: High Speed(LPSRAM)
X: High Voltage(LPSRAM)
J: BICMOS
L: Poly Load Cell + LPSRAM
R: Center Vcc/Vss + Fast SRAM
T:TFT Cell + LPSRAM
4~5. Density
06: 64K 08: 256K 09: 512K
10: 1M 16: 16M 20: 2M
30: 3M 32: 32M 40: 4M
60: 6M 64: 64M 80: 8M
6~7. Organization
01: x1 04: x4 08: x8
16: x16 18: x18 24: x24
32: x32
8.Vcc
5: 1.5V C: 5.0V
Q:VDD 3.0V/VDDQ 1.8V
R: 1.65V~2.2V
S: 2.5V T: 2.7V~3.6V U: 3.0V
V: 3.3V W: 2.2V~3.3V
9. Mode
1: CS Low Active
2: CS1, CS2 - Dual Chip Select Signal
3: Single Chip Select with /LB,/UB(tOE)
4: Single Chip Select with /LB,/UB(tCS)
5: Dual Chip Select with /LB,/UB(tOE)
6: Dual Chip Select with /LB,/UB(tCS)
7: I/Os Control with /BYTE
8: CDMA Function
9: Multiplexed Address
A: Mirror Chip Option
10. Generation
M: 1st Generation
A: 2nd Generation B: 3rd Generation
C: 4th Generation D: 5th Generation
E: 6th Generation F: 7th Generation
G: 8th Generation H: 9th Generation
11. " ----"
12. Package
A:TBGA(LF) B: SOP(LF)
C: CHIP BIZ D: DIP
E:TBGA F: FBGA
G: SOP H: BGA
J: SOJ K: SOJ(LF)
L:TSOP1-0813.4F(LF)
P:TSOP1-0820F(LF)
Q:TSOP2-400R(LF) R:TSOP-R
T:TSOP U:TSOP2-400(LF)
W:WAFER Z: UBGA
* Exception
- 1MFSRAM B-ver
32-SOJ-300 > S
28-SOJ-300 > S
- 512K/1M/2M/4M LPSRAM
32-TSOP1-0813.4F > Y
32-TSOP1-0813.4 > Y
32-TSOP1-0813.4R > N
- 4M LPSRAM
32-TSOP2-400F > V
32-TSOP2-400R > M
13. 1st Chip Speed
- COMMON (Temp,Power)
A:Automotive,Normal
B: Commercial,Low Low
C: Commercial,Normal
D: Extended,Low Low
E: Extended,Normal
F: Industrial,Low Low
I: Industrial,Normal
L: Commercial,Low
M: Military,Normal
N: Extended,Low
P: Industrial,Low
Q:Automotive,Low
R: Industrial,Super Low
T: Extended,Super Low
U: Commercial,Ultra Super Low
0: NONE,NONE
- WAFER, CHIP BIZ Level Division
0: NONE,NONE
1: Hot DC sort
2: Hot DC,selected AC sort
3: Cold/Hot DC,selected AC sort
14~15. Speed (
t
AA)
- fCMOS Cell + LPSRAM & Poly Load Cell +
LPSRAM & TFT Cell + LPSRAM
10: 100ns
12: 120ns
15: 150ns
25: 25ns(only fCMOS Cell)
30: 300ns
35: 35ns(except Poly Load Cell)
45: 45ns(except fCMOS Cell)
55: 55ns
60: 60ns(only fCMOS Cell)
70: 70ns
85: 85ns
90: 90ns(only fCMOS Cell)
DS: Daisychain Sample
- High Speed (LPSRAM)
20: 20ns 25: 25ns
- High Voltage (LPSRAM)
55: 55ns 70: 70ns 85: 85ns
- Corner Vcc/Vss + Fast SRAM
10: 10ns 12: 12ns 13: 13ns
15: 15ns 17: 17ns 20: 20ns
25: 25ns 30: 30ns 35: 35ns
45 :45ns
- BICMOS & Center Vcc/Vss + Fast SRAM
06: 6ns 08: 8ns 09: 9ns
10: 10ns 12: 12ns 13: 13ns
15: 15ns 17: 17ns 20: 20ns
25: 25ns
30: 30ns(only Center Vcc/Vss + Fast SRAM)
35: 35ns(only Center Vcc/Vss + Fast SRAM)
7A: 7.2ns(only BICMOS)
8A: 8.6ns(only BICMOS)
DS: Daisychain Sample
- Async SRAM COMMON
00: NONE
(Containing Wafer, CHIP BIZ, Exception code)
16. Packing Type (16 digit)
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray,Tube, Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
MEMORY AND ST ORA GE
15
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
Synchronous SRAM
SPB & FT (36Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A323630C 1Mx36 SPB 3.3, 2.5 3.1 200 3.3, 2.5 100TQFP Pb-free 2E1D
K7A321830C 2Mx18 SPB 3.3, 2.5 3.1 200 3.3, 2.5 100TQFP Pb-free 2E1D
K7B323635C 1Mx36 SB 3.3, 2.5 7.5 118 3.3, 2.5 100TQFP Pb-free Ind Temp only
K7B321835C 2Mx18 SB 3.3, 2.5 7.5 118 3.3, 2.5 100TQFP Pb-free Ind Temp only
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable
200MHz could cover 167MHz, 133MHz speed option
SPB & FT (18Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A163630B 512Kx36 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3,2.5 100TQFP Pb-free 2E1D
K7A163631B 512Kx36 SPB 3.3, 2.5 3.1 200 3.3, 2.5 100TQFP Pb-free 2E2D
K7A161830B 1Mx18 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3,2.5 100TQFP Pb-free 2E1D
K7A161831B 1Mx18 SPB 3.3, 2.5 3.1 200 3.3, 2.5 100TQFP Pb-free 2E2D
K7B163635B 512Kx36 SB 3.3, 2.5 7.5 117 3.3, 2.5 100TQFP Pb-free -
K7B161835B 1Mx18 SB 3.3, 2.5 7.5 117 3.3, 2.5 100TQFP Pb-free -
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable
250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
SPB & FT (4Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A403600B 128Kx36 SPB 3.3 3.5 167 3.3, 2.5 100TQFP (LF only) Not for new designs 2E1D
K7A401800B 256Kx18 SPB 3.3 3.5 167 3.3, 2.5 100TQFP (LF only) Not for new designs 2E1D
K7A403609B 128Kx36 SPB 3.3 2.4 250 3.3, 2.5 100TQFP (LF only) Not for new designs 2E1D
K7A401809B 256Kx18 SPB 3.3 2.4 250 3.3, 2.5 100TQFP (LF only) Not for new designs 2E1D
K7A403200B 128Kx32 SPB 3.3 3.5 167 3.3, 2.5 100TQFP (LF only) Not for new designs 2E1D
K7B403625B 128Kx36 SB 3.3 6.5 133 3.3, 2.5 100TQFP (LF only) Not for new designs
K7B401825B 256Kx18 SB 3.3 6.5 133 3.3, 2.5 100TQFP (LF only) Not for new designs
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable Recommended speed options for SPB are 250MHz and 167MHz
2E2D = 2-cycle Enable and 2-cycle Disable Recommended access speed option for SB is 6.5ns
SPB & FT (8Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A803600B 256x36 SPB 3.3 3.5 167 3.3,2.5 100TQFP (LF only) Not for new designs 2E1D
K7A803609B 256x36 SPB 3.3 2.6 250 3.3,2.5 100TQFP (LF only) Not for new designs 2E1D
K7A801800B 512x18 SPB 3.3 3.5 167 3.3,2.5 100TQFP (LF only) Not for new designs 2E1D
K7A801809B 512x18 SPB 3.3 2.6 250 3.3,2.5 100TQFP (LF only) Not for new designs 2E1D
K7B803625B 256x36 SB 3.3 6.5 133 3.3,2.5 100TQFP (LF only) Not for new designs -
K7B801825B 512x18 SB 3.3 6.5 133 3.3,2.5 100TQFP (LF only) Not for new designs -
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable Recommended speed options for SPB are 250MHz and 167MHz
2E2D = 2-cycle Enable and 2-cycle Disable Recommended access speed option for SB is 6.5ns
NtRAM™(72Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7N643645M 2Mx36 SPB 2.5 2.6, 3.5 250, 167 2.5 100TQFP, 165FBGA
K7N641845M 4Mx18 SPB 2.5 2.6, 3.5 250, 167 2.5 100TQFP, 165FBGA
NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option All packages are Pb-free
MEMORY AND ST ORA GE
16
Synchronous SRAM
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
NtRAM™(18Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N161831B 1Mx18 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 "100TQFP, 165FBGA"
K7N163631B 512Kx36 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 "100TQFP, 165FBGA"
K7M161835B 1Mx18 FT(SB) 3.3 6.5 133 3.3, 2.5 100TQFP
K7M163635B 512Kx36 FT(SB) 3.3 6.5 133 3.3, 2.5 100TQFP
NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option / 6.5ns could cover 7.5ns speed option
All packages are Pb-free
NtRAM (8Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N803601B 256Kx36 SPB 3.3 3.5 167 3.3,2.5 100TQFP Not for new designs
K7N801801B 512Kx18 SPB 3.3 3.5 167 3.3,2.5 100TQFP Not for new designs
K7N803609B 256Kx36 SPB 3.3 2.6 250 3.3,2.5 100TQFP Not for new designs
K7N801809B 512Kx18 SPB 3.3 2.6 250 3.3,2.5 100TQFP Not for new designs
K7N803645B 256Kx36 SPB 2.5 3.5 167 2.5 100TQFP Not for new designs
K7N801845B 512Kx18 SPB 2.5 3.5 167 2.5 100TQFP Not for new designs
K7N803649B 256Kx36 SPB 2.5 2.6 250 2.5 100TQFP Not for new designs
K7N801849B 512Kx18 SPB 2.5 2.6 250 2.5 100TQFP Not for new designs
K7M801825B 512Kx18 FT 3.3 6.5 133 3.3, 2.5 100TQFP Not for new designs
K7M803625B 256Kx36 FT 3.3 6.5 133 3.3, 2.5 100TQFP Not for new designs
NOTE: All packages are Pb-free
NtRAM (4Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N403609B 128Kx36 SPB 3.3 3.0 200 3.3,2.5 100TQFP Not for new designs
K7N401809B 256Kx18 SPB 3.3 3.0 200 3.3,2.5 100TQFP Not for new designs
NOTE: All packages are Pb-free
NtRAM™(36Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N323635C 1Mx36 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 100TQFP, 165FBGA
K7N321835C 2Mx18 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 100TQFP, 165FBGA
K7M323631C 1Mx36 FT 3.3, 2.5 7.5 118 3.3, 2.5 100TQFP
K7M321831C 2Mx18 FT 3.3, 2.5 7.5 118 3.3, 2.5 100TQFP
NOTES: Recommended speed options for SPB are 250MHz and 167MHz Recommended access speed option for SB is 7.5ns
250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
LATE-WRITE R-R (32Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7P321874C 2Mx18 SP 1.8 / 2.5V 1.6, 2.0 300,250 1.5 (Max 1.8) 119BGA C/S
K7P323674C 1Mx36 SP 1.8 / 2.5V 1.6, 2.0 300,250 1.5 (Max 1.8) 119BGA C/S
MEMORY AND ST ORA GE
17
Synchronous SRAM
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
LATE-WRITE R-R (16Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7P161874C 1Mx18 SP 2.5 2 250 1.5 (Max 1.9) 119BGA C/S
K7P163674C 512Kx36 SP 2.5 1.6 300 1.5 (Max.1.9) 119BGA C/S
DDR (16Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status
K7D161874B 1Mx18 1.8~2.5 2.3 330, 300 1.5~1.9 153BGA
K7D163674B 512Kx36 1.8~2.5 2.3 330, 300 1.5~1.9 153BGA
LATE-WRITE R-R & R-L (4Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7P401822B 256Kx18 SP 3.3 2.5,2.7,3.0 250,200,167 2.5/3.3 119BGA Not for new designs
K7P401823B 256Kx18 SP 3.3 6.5 167 2.5/3.3 119BGA Not for new designs
K7P403622B 128Kx36 SP 3.3 2.5,2.7,3.0 250,200,167 2.5/3.3 119BGA Not for new designs
DDR (8Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status
K7D803671B 256Kx36 2.5 1.7/1.9/2.1 333, 330, 250 1.5(Max 2.0) 153BGA Not for new designs
K7D801871B 512Kx18 2.5 1.7/1.9/2.1 333, 330, 250 1.5(Max 2.0) 153BGA Not for new designs
LATE-WRITE R-R (8Mbit) SRAM
Part Operating Access Time Speed I/O
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7P801811B 512Kx18 SP 3.3 1.6 300 1.5 (Max.2.0) 119BGA Not for new designs
K7P803611B 256Kx36 SP 3.3 1.6 300 1.5 (Max.2.0) 119BGA Not for new designs
K7P801866B 512Kx18 SP 2.5 2.0 250 1.5 (Max.2.0) 119BGA Not for new designs
K7P803666B 256Kx36 SP 2.5 2.0 250 1.5 (Max.2.0) 119BGA Not for new designs
DDR (32Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status
K7D321874A 2Mx18 1.8~2.5 2.0 400, 375, 333 1.5~1.8 153BGA EOL in June`07
K7D323674A 1Mx36 1.8~2.5 2.0 400, 375, 333 1.5~1.8 153BGA EOL in June`07
K7D321874C 2Mx18 1.8~2.5 2.0 400, 375, 333 1.5~1.8 153BGA
K7D323674C 1Mx36 1.8~2.5 2.0 400, 375, 333 1.5~1.8 153BGA
MEMORY AND ST ORA GE
18
Synchronous SRAM
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
DDR
II
CIO/SIO (18Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7I161882B 1Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA CIO-2B
K7I161884B 1Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA CIO-4B
K7J161882B 1Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA SIO-2B
K7J163682B 512Kx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA SIO-2B
K7I163682B 512Kx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA CIO-2B
K7I163684B 512Kx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA CIO-4B
NOTES: 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O
DDR
II
CIO/SIO (36Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7I321882C 2Mx18 1.8 0.45 333,300,250 1.5,1.8 165FBGA CIO-2B
K7I321884C 2Mx18 1.8 0.45 333,300,250 1.5,1.8 165FBGA CIO-4B
K7J321882C 2Mx18 1.8 0.45 333,300,250 1.5,1.8 165FBGA SIO-2B
K7I323682C 1Mx36 1.8 0.45 333,300,250 1.5,1.8 165FBGA CIO-2B
K7I323684C 1Mx36 1.8 0.45 333,300,250 1.5,1.8 165FBGA CIO-4B
K7J323682C 1Mx36 1.8 0.45 333,300,250 1.5,1.8 165FBGA SIO-2B
NOTES: 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O
C-die will support high-speed bins only 330, 300, 250MHz, which can cover slow-speed bins (200MHz, 167MHz) using stable DLL circuit.
DDR
II
+ CIO (18Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7K1618T2C 1Mx18 1.8 0.45 450, 400, 333 1.5 165FBGA DDRII + CIO-2B
K7K1636T2C 512Kx36 1.8 0.45 450, 400, 333 1.5 165FBGA DDRII + CIO-2B
NOTE: Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand.
DDR
II
+ CIO (36Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7K3218T2C 2Mx18 1.8 0.45 450, 400, 333 1.5 165FBGA DDRII + CIO-2B
K7K3236T2C 1Mx36 1.8 0.45 450, 400, 333 1.5 165FBGA DDRII + CIO-2B
NOTE: Offer 2-clock latency now; we can also support 2.5-clock latency with 450MHz speed based on demand.
DDR
II
CIO/SIO (72Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7I641882M 4Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA CIO-2B
K7I641884M 4Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA CIO-4B
K7J641882M 4Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA SIO-2B
K7I643682M 2Mx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA CIO-2B
K7I643684M 2Mx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA CIO-4B
K7J643682M 2Mx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA SIO-2B
NOTES: 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O
MEMORY AND ST ORA GE
19
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
Synchronous SRAM
QDR
I
,
II
(18Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7R160982B 2Mx9 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA QDR II - 2B
K7R161882B 1Mx18 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA QDR II - 2B
K7R161884B 1Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA QDR II - 4B
K7Q161862B 1Mx18 1.8v / 2.5v 2.5 167 1.5,1.8 165FBGA QDR I - 2B
K7Q161864B 1Mx18 1.8v / 2.5v 2.5 167 1.5,1.8 165FBGA QDR I - 4B
K7R163682B 512Kx36 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA QDR II - 2B
K7R163684B 512Kx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA QDR II - 4B
K7Q163662B 512Kx36 1.8v / 2.5v 2.5 167 1.5,1.8 165FBGA QDR I - 2B
K7Q163664B 512Kx36 1.8v / 2.5v 2.5 167 1.5,1.8 165FBGA QDR I - 4B
NOTES: 2B = Burst of 2 4B = Burst of 4
QDR
II
+
(18Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7S1618T4C 1Mx18 1.8 0.45 450, 400, 333 1.5 165FBGA QDR II + 4B
K7S1636T4C 512Kx36 1.8 0.45 450, 400, 333 1.5 165FBGA QDR II + 4B
NOTE: Offer 2-clock latency now; we can also support 2.5-clock latency with 450MHz speed based on demand.
QDR
II
+ (36Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7S3218T4C 1Mx36 1.8 0.45 450, 400, 333 1.5 165FBGA QDR II + 4B
K7S3236T4C 2Mx18 1.8 0.45 450, 400, 333 1.5 165FBGA QDR II + 4B
NOTE: Offer 2-clock latency now; we can also support 2.5-clock latency with 450MHz speed based on demand.
QDR
II
(72Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7R640982M 8Mx9 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA QDR II-2B
K7R641882M 4Mx18 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA QDR II-2B
K7R641884M 4Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA QDR II-4B
K7R643682M 2Mx36 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA QDR II-2B
K7R643684M 2Mx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA QDR II-4B
NOTES: 2B = Burst of 2 4B = Burst of 4
The recommended speed bins are 250MHz, 200MHz for 2B part, 300MHz, 250MHz for 4B part.
QDR
II
(36Mbit) SRAM
P art Access Time Cycle Time I/O
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7R320982C 4Mx9 1.8 0.45 300,250, 200 1.5,1.8 165FBGA QDR II-2B
K7R321882C 2Mx18 1.8 0.45 300,250, 200 1.5,1.8 165FBGA QDR II-2B
K7R321884C 2Mx18 1.8 0.45 333,300, 250 1.5,1.8 165FBGA QDR II-4B
K7R323682C 1Mx36 1.8 0.45 300,250, 200 1.5,1.8 165FBGA QDR II-2B
K7R323684C 1Mx36 1.8 0.45 333,300, 250 1.5,1.8 165FBGA QDR II-4B
NOTES: 2B = Burst of 2 4B = Burst of 4
C-die will support high-speed bins only 300, 250, 200MHz, which can cover slow-speed bin (167MHz) using stable DLL circuit.
MEMORY AND ST ORA GE
Synchronous SRAM Ordering Information
20 SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
SYNCHRONOUS SRAM ORDERING INFORMATION
K 7 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2. Sync SRAM: 7
3. Small Classification
A: Sync Pipelined Burst
B: Sync Burst
C: Custom Product
D: Double Data Rate
I: Double Data Rate II, Common I/O
J: Double Data Rate, Separate I/O
K: Double Data II+, Common I/O
L: Late Select
M: Sync Burst + NtRAM
N: Sync Pipelined Burst + NtRAM
P: Sync Pipe
Q: Quad Data Rate I
R: Quad Data Rate II
S: Quad Data Rate II+
4~5. Density
10: 1M 80: 8M
20: 2M 16: 18M
40: 4M 32: 36M
64: 72M 44: 144M
6~7. Organization
08: x8 09: x9
18: x18 32: x32
36: x36 44: x144
72: x72
8~9.Vcc, Interface, Mode
00: 3.3V,LVTTL,2E1D WIDE
01: 3.3V,LVTTL,2E2D WIDE
08: 3.3V,LVTTL,2E2D Hi SPEED
09: 3.3V,LVTTL,Hi SPEED
11: 3.3V,HSTL,R-R
12: 3.3V,HSTL,R-L
14: 3.3V,HSTL,R-R Fixed ZQ
22: 3.3V,LVTTL,R-R
23: 3.3V,LVTTL,R-L
25: 3.3V,LVTTL,SB-FT WIDE
30: 1.8/2.5/3.3V,LVTTL,2E1D
31: 1.8/2.5/3.3V,LVTTL,2E2D
35: 1.8/2.5/3.3V,LVTTL,SB-FT
44: 2.5V,LVTTL,2E1D
45: 2.5V,LVTTL,2E2D
49: 2.5V,LVTTL,Hi SPEED
52: 2.5V,1.5/1.8V,HSTL,Burst2
54: 2.5V,1.5/1.8V,HSTL,Burst4
62: 2.5V/1.8V,HSTL,Burst2
64: 2.5V/1.8V,HSTL,Burst4
66: 2.5V,HSTL,R-R
70: 2.5V,HSTL,4-1-1-1
71: 2.5V,HSTL,3-1-1-1
73: 1.5V,1.8V,HSTL,All
74: 1.8V,2.5V,HSTL,All
80: 1.8V,LVCMOS,2E1D
82: 1.8V,HSTL,Burst2
84: 1.8V,HSTL,Burst4
85: 1.8V,LVCMOS,2E2D,Hi SPEED
88: 1.8V,HSTL,R-R
91: 1.5V,HSTL,All
95: 1.0V,HSTL,All
T2: 1.8V,2Clock Latency,Burst2
T4: 1.8V,2Clock Latency,Burst4
U2: 1.8V,2.5Clock Latency,Burst2
U4: 1.8V,2.5Clock Latency,Burst4
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
Z:TEMPORARY CODE
11.“--”
12. Package
H: BGA,FCBGA,PBGA
G: BGA, FCBGA, FBGA (LF)
F: FBGA
E: FBGA (LF)
Q: (L)QPF
P: (L)QFP(LF)
C: CHIP BIZ
W:WAFER
13.Temp, Power
- COMMON (Temp,Power)
0: NONE,NONE (Containing of Error handling code)
A:Automotive,Normal
B: Commercial,Low Low
C: Commercial,Normal
E: Extended,Normal
I: Industrial,Normal
- WAFER, CHIP BIZ Level Division
0: NONE,NONE
1: Hot DC sort
2: Hot DC, selected AC sort
14~15. Speed
- Sync Burst,Sync Burst + NtRAM
& < Mode is R-L >(Clock Accesss Time)
10: 10ns(Sync Burst, Sync Burst + NtRAM)
38: 3.8ns 43: 4.3ns
48: 4.8ns
50: 5ns(Only Sync Pipe)
55: 5.5ns 60: 6ns
65: 6.5ns 67: 6.7ns
70: 7ns 75: 7.5ns
80: 8ns 85: 8.5ns
90: 9ns
- Other Small Classification (Clock Cycle Time)
10: 100MHz 11: 117MHz
13: 133MHz 14: 138MHz
15: 150MHz 16: 166MHz
17: 175MHz 18: 183MHz
19: 143MHz 20: 200MHz
21: 200MHz(2.0ns) 22: 225MHz
25: 250MHz
26: 250MHz(1.75ns) 27: 275MHz
30: 300MHz 33: 333MHz
35: 350MHz
36: 366MHz(t-CYCLE) 37: 375MHz
40: 400MHz(t-CYCLE) 42: 425MHz
45: 450MHz
50: 500MHz(except Sync Pipe)
6A: 600MHz 6F: 650Mhz(Only CSRAM)
7F: 750MHz
16. Packing Type (16 digit)
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray,Tube, Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
MEMORY AND ST ORA GE
21
SAMSUNG SEMICONDUCTOR, INC.
MCPs
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007
MCP: NAND/DRAM
DENSITY VCC (V) ORGANIZATION PACKAGE INFORMATION
FLASH DRAM Memory Combination FLASH DRAM FLASH DRAM Part No. Size Type
256Mb 256Mb ND256256 1.8V 1.8V x8 x16 K5D5657ACC-D090000 10.5x13x1.4 107FBGA
256Mb 512Mb ND256512 3.0V 2.5V x8 x32 K5D5613HCA-D075000 10.5x13x1.2 137FBGA
256Mb 1Gb NDD256512512 3.0V 2.5V x8 x16 KAL005005M-DGYY000 10.5X13X1.4 137FBGA
512Mb 256Mb ND512256 1.8V 1.8V x8 x16 K5D1257ACC-D090000 10.5x13x1.2 107FBGA
2.7V 1.8V x8 x16 K5D12571CM-D090000 10.5x13x1.4 107FBGA
1.8V 1.8V x8 x16 K5E1257ACM-D075000 10.5x13x1.2 107FBGA
2.65V 1.8V x8 x32 K5D1258DCA-A090000 10.5x13x1.2 137FBGA
512Mb 512Mb ND512512 1.8V 1.8V x8 x16 K5D12121CM-D090000 10.5x13x1.4 107FBGA
1.8V 1.8V x8 x32 K5D12131CM-D090000 10.5x13x1.4 137FBGA
1.8V 1.8V x8 x32 K5D1213ACE-D090000 10.5x13x1.2 137FBGA
1Gb 256Mb ND1G256 1.8V(L) 1.8V x8 x16 K5D1G572CM-D075000 10.5x13x1.2 107FBGA
1.8V(L) 1.8V x8 x32 K5E1G58ACM-D060000 10.5x13x1.2 107FBGA
1Gb 512Mb ND1G512 1.8V(L) 1.8V x8 x16 K5D1G12ACD-D075000 10.5x13x1.4 107FBGA
1.8V(L) 1.8V x8 x32 TBD 10.5x13x1.2 137FBGA
1.8V(L) 1.8V(D) x8 x32 K5E1G131CA-D075000 10.5x13x1.4 137FBGA
1Gb 1Gb NDD1G512512 1.8V(L) 1.8V(D) x8 x32 KAL00X001M-AJYY000 11.5x13x1.4 137FBGA
1.8V(L) 1.8V x8 x16 KAL00X00VM-DJYY000 10.5x13x1.4 137FBGA
2Gb 512Mb NND1G1G512 1.8V(L) 1.8V x8 x32(D) KAG001002A-DJJY000 11.5x13x1.4 137FBGA
1.8V(L) 2.65V x8 x16 KAG006003B-DJJ5000 10.5x13x1.4 137FBGA
ND2G512 1.8V 1.8V x8 x16 K5E2G12ACM-D075000 12.0x14x1.4 107FBGA
2Gb 1Gb NDD2G512512 1.8V 1.8V x8 x32 KAL009001M-D1YY000 12x14x1.4 137FBGA
ND2G1G 1.8V 1.8V x8 x32 K5E2G1GACM-D060000 12x14x1.2 137FBGA
NOTES: 1. N = NAND, D= DRAM memory combination indicates the type, density,and number of die stacks in the MCP. (Ex. NDD256256256 = 256Mb NAND + 256Mb DRAM + 256Mb DRAM).
2.When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5D5629ACC-D090T00)
3. (D) Denotes DDR SDRAM packaged in MCP
4. (L) Denotes Large Block NAND packaged in MCP
MCP: NOR/SRAM AND NOR/UtRAM
DENSITY Memory VCC (V) ORGANIZATION PACKAGE INFORMATION
FLASH SRAM Combination FLASH SRAM FLASH SRAM BOOT NOR OPR. Part No. Size Type
32Mb 8Mb RC3208 1.8V 1.8V x16 x16 TOP Sync. Mux, Ut2 K5N3208ATM-SF66000 8x9.2x1.2 56FBGA
16Mb RU3216 3.0V 3.0V x16 x16 TOP/BOM Async. No Page TBD 8x11x1.2 69FBGA
64Mb 32Mb RU6432 3.0V 3.0V x16 x16 TOP Async. No Page K5J6332CTM-D770000 8x11.6x1.4 69FBGA
1.8V 1.8V x16 x16 TOP Async. DeMux K5L6532ATM-D870000 8x12x1.2 115FBGA
128Mb 32Mb RU12832 3.0V 3.0V x16 x16 TOP/BOT Async. Page Mode K5L2931CAA-D770000 8x11.6x1.2 64FBGA
1.8V 1.8V x16 x16 TOP Sync Mux K5L2931CAM-D770000 8.0x9.2x1.2 56FBGA
128Mb 64Mb RU12864 3.0V 3.0V x16 x16 TOP/BOT Async Page Mode K5L2963CAM-D770000 8x11.6x1.2 64FBGA
RC12864 1.8V 1.8V x16 x16 BOT Sync Mux K5N2866ABM-DF66000 8x9.2x1.2 56FBGA
256Mb 64Mb RU25664 3.0V 3.0V x16 x16 TOP/BOT Async Page Mode K5L5563CAM-D770000 8x11.6x1.2 84FBGA
RC25664 1.8V 1.8V x16 x16 TOP Sync Mux, Ut2 K5N5666ATM-SS66000 8x9.2x1.2 56FBGA
256Mb 128Mb RU256128 2.7V 2.7V x16 x16 TOP/BOT Async Page Mode K5L5527CAM-D770000 8x11.6x1.2 84FBGA
1.8V 1.8V x16 x16 TOP Sync DeMux K5L5628ATA-DF66000 8x11.6x1.3 84FBGA
NOTES: 1. R= NOR, S= SRAM, U= UtRAM Memory combination indicates the type, density,and number of die stacks in the MCP. (Ex. RRU646432 = 64Mb NOR + 64Mb NOR + 32Mb UtRAM).
2.When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5A3240CTM-F755T00)
3.All NOR Flash have demuxed Add/Data lines unless otherwise indicated in NOR OPR column.
4.All packages are pin compatible to Spansion's MCP pin out.
BR-07-ALL-001
MEMORY AND ST ORA GE
MCP: OneNAND/DRAM
DENSITY VCC (V) ORGANIZATION PACKAGE INFORMATION
FLASH DRAM Memory Combination FLASH DRAM FLASH DRAM Part No. Size Type
256Mb 256Mb OD256256 3.3V 3.3V x16 x32 K5R5658VCM-DR75000 8x13x1.4 188FBGA
3.3V 1.8V x16 x32 K5R5658LCM-DR75000 8x13x1.4 188FBGA
512Mb 512Mb OD512512 1.8V 1.8V x16 x32 K5R1213ACB-DK75000 11.5x13x1.4 202FBGA
1Gb 512Mb OD1G512 1.8V 1.8V x16 x16(D) K5W1G12ACD-DK75000 11.5x13x1.4 167FBGA
2Gb 512Mb OD2G512 1.8V 1.8V x16 x16 K5R2G12ACM-DK90000 11.5x13x1.4 202FBGA
NOTES: 1. O= OneNAND, D= DRAM Memory combination indicates the type, density,and number of die stacks in the MCP. (Ex. OD1G512 = 1Gb OneNAND + 512Mb SDRAM).
2.When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5R5658VCM-DR75T00)
3. (D) Denotes DDR SDRAM packaged in MCP.
4.All OneNAND Flash have demuxed Add/Data lines.
MCP: NOR/DRAM
DENSITY Memory VCC (V) ORGANIZATION PACKAGE INFORMATION
FLASH SRAM Combination FLASH SRAM FLASH DRAM BOOT NOR OPR. Part No. Size Type
64Mb 256Mb RD64256 3.0V 1.8V x16 x32 TOP Async. No Page K5H6358LTM-D7750CD 10x11x0.8 145FBGA
64Mb 512Mb RD64512 3.0V 1.8V x16 x32(D) TOP Async. No Page K5Y6313LTM-D790000 10.5x12x1.4 151FBGA
512Mb 256Mb RRD512256 1.8V 1.8V x16 x16(D) TOP Sync MLC KAS35000AM-S44Y000 11x10x1.3 133FBGA
512Mb 512Mb RRD256256512 1.8V 1.8V x16 x16 T+B Sync KAS280003M-DUU5000 11.5x13x1.4 167FBGA
NOTES: 1. R= NOR, D= DRAM Memory combination indicates the type, density,and number of die stacks in the MCP. (Ex. RDD32128128 = 32Mb NOR + 128Mb DRAM + 128Mb DRAM).
2.When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5H6358ETA-D775T00)
3.All NOR Flash have demuxed Add/Data lines
MCP: MOST COMMONLY USED MCP CONFIGURATIONS
Memory NAND Density DRAM Density/Organization Voltage (NAND-DRAM) Package
NAND & DRAM 256Mb 128Mb (x16) 1.8V - 1.8V 107FBGA
256Mb 256Mb (x16) 2.65V - 1.8/1.8V 107FBGA
256Mb 512Mb (x32) 3V - 3/2.5V 137FBGA
512Mb 256Mb (x16/x32) 2.65/1.8V - 1.8V 107FBGA/137FBGA
512Mb 512Mb (x16/x32) 2.65/1.8V - 1.8V 107FBGA/137FBGA
1Gb 256Mb (x16) 2.65V - 1.8V 107FBGA
1Gb 512Mb (x16/x32) 3.0/2.65/1.8V - 3.0/2.65/1.8V 137/107FBGA
2Gb 512Mb (x16/x32) 3.0/2.65/1.8V - 3.0/2.65/1.8V 137/107FBGA
2Gb 1Gb (x32) 2.65/1.8V - 1.8V 137FBGA
NOR & UtRAM 64Mb 32Mb 3.0V - 3.0V 69FBGA
128Mb 32Mb 3.0/1.8V - 3.0/1.8V 56FBGA/64FBGA
128Mb 64Mb 3.0/1.8V - 3.0/1.8V 64FBGA
256Mb 64Mb 3.0V - 3.0V 84FBGA
256Mb 128Mb 3.0V - 3.0V 84FBGA
OneNAND & DRAM 256Mb 256Mb (x32) 3.3V - 3.3/1.8V 188FBGA/167FBGA
512Mb 512Mb (x16/x32) 1.8V-1.8V 167FBGA/202FBGA
1Gb 512Mb (x16/x32) 1.8V-1.8V 167FBGA/202FBGA
1Gb 1Gb (x16/x32) 1.8V-1.8V 202FBGA
NOTES: This list represents the most commonly used MCPs; more options are available.
All NAND organization is x8; all NOR and UtRAM organization is x16 each.
22
MCPs
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
MEMORY AND ST ORA GE
23
Fusion Memory
AUGUST 2007
FLASH: OneNAND
OneNAND is a monolothic IC that combines a NAND flash array with a NOR flash interface plus an SRAM buffer. It’s ideal for high-performance,
high-density applications.
Density Org Speed (MHz) Voltage(V) Part Number Package Temperature Comments
256Mb X16 54Mhz 3.3 KFG5616U1A-PIB5000 48TSOP (12x20) Industrial
256Mb X16 54Mhz 1.8 KFG5616Q1A-DEB5000 67 FBGA Extended
256Mb X16 66MHz 1.8 KFG5616Q1A-DEB6000 67 FBGA Extended
256Mb X16 54MHz 3.3 KFG5616U1A-DIB5000 FBGA (7x9) Industrial
256Mb X16 66MHZ 3.3 KFG5616U1A-DIB6000 FBGA (7x9) Industrial
512Mb X16 54MHz 1.8 KFG1216Q2B-DEB5000 63 FBGA Extended
512Mb X16 66MHz 1.8 KFG1216Q2B-DEB6000 63 FBGA Extended
512Mb X16 54MHZ 3.3 KFG1216U2B-DIB5000 FBGA (9.5x12) Industrial
512Mb X16 66MHz 3.3 KFG1216U2B-DIB6000 FBGA (9.5x12) Industrial
1Gb X16 83Mhz 1.8 KFG1G16Q2B-DEB8000 63 FBGA(10x13) Extended
2Gb X16 83Mhz 1.8 KFG2G16Q2M-DEB8000 63 FBGA (11x13) Extended
4Gb X16 83Mhz 1.8 KFH4G16Q2M-DEB8000 63 FBGA (10x13) Extended
NOTE: All parts are lead free For ordering information, refer to page 11.
FLASH: moviNAND
Combining high-density MLC NAND flash with an MMC controller in a single chip that has an MMC interface, moviNAND delivers dense, cost-effective storage for
embedded applications.
Density Org Speed (MHz) Voltage(V) Part Number Package Package Size Comments
512MB x8 52MHz 1.8/3.3 KMAIN0000A-S998000 153FBGA 11.5x13x1.3t
1GB x8 52MHz 1.8/3.3 KMAFN0000M-S998000 169FBGA 12.0x18x1.2t
2GB x8 52MHz 1.8/3.3 KMBDN0000M-S998000 169FBGA 12.0x18x1.2t
2GB x8 52MHz 1.8/3.3 KMBDE0000A-S998000 153FBGA 11.5x13x1.3t
2GB x8 52MHz 1.8/3.3 KMAKE0000M-B998000 169FBGA 12.0x18x1.2t
4GB x8 52MHz 1.8/3.3 KMCEN0000M-S998000 169FBGA 12.0x18x1.2t
4GB x8 52MHz 1.8/3.3 KMCEE0000A-S998000 153FBGA 11.5x13x1.3t
4GB x8 52MHz 1.8/3.3 KMBLE0000M-B998000 169FBGA 12.0x18x1.2t
8GB x8 52MHz 1.8/3.3 KMCME0000M-B998000 169FBGA 12.0x18x1.3t
NOTE: All parts are lead free. For ordering information, refer to page 11.
DRAM: OneDRAM
OneDRAM is a dual-port, low power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications.
Density Org Speed (MHz) Voltage(V) Part Number Package Comments
512Mb X16 133MHz Coming Second Half 2007
NOTE: All parts are lead free
FLASH: FLEX-OneNAND
A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables partitioning into SLC and MLC areas so the chip can be configured
for storage or high-speed access.
Density Org Speed (MHz) Voltage(V) Part Number Package Comments
4Gb x16 DDP ES
8Gb x16 DDP ES
16Gb x16 QDP ES
NOTE: All parts are lead free
AUGUST 2007 BR-07-ALL-001
MEMORY AND ST ORA GE
24
Hard Disk Drives
SAMSUNG SEMICONDUCTOR, INC.
3.5" HARD DISK DRIVES
Family Capacity (GB) RPM Interface Buffer Model
T1665 500 7200 SATA-2 8 HD500LJ
500 7200 SATA-2 16 HD501LJ
320 7200 SATA-2 8 HD320KJ
320 7200 SATA-2 16 HD321KJ
T1335 400 7200 SATA-2 8 HD400LI
400 7200 SATA-2 16 HD401LI
300 7200 SATA-2 8 HD300LI
T133 400 7200 PATA 8 HD400LD
300 7200 PATA 8 HD300LD
S166S 160 7200 SATA-2 8 HD161HJ
120 7200 SATA-2 8 HD120HJ
80 7200 SATA-2 2 HD081GJ
80 7200 SATA-2 8 HD082GJ
40 7200 SATA-2 2 HD041GJ
40 7200 SATA-2 8 HD042GJ
P120S 250 7200 SATA-2 8 SP2504C
250 7200 SATA-2 8 SP2004C
P120 250 7200 PATA 8 SP2514N
200 7200 PATA 8 SP2014N
P80SD 160 7200 SATA-2 8 HD160JJ
120 7200 SATA-2 8 HD120IJ
80 7200 SATA-2 8 HD080HJ
P80SD 160 7200 PATA 2 SP1644N
160 7200 PATA 8 SP1654N
120 7200 PATA 2 SP1243N
120 7200 PATA 8 SP1253N
80 7200 PATA 2 SP0842N
2.5" HARD DISK DRIVES
Family Capacity (GB) RPM Interface Buffer Model
M5S 250 5400 SATA 8 HM250JI
160 5400 SATA 8 HM160HI
120 5400 SATA 8 HM121HI
80 5400 SATA 8 HM080GI
60 5400 SATA 8 HM061GI
M80S 160 5400 SATA 8 HM160JI
120 5400 SATA 8 HM120II
80 5400 SATA 8 HM080HI
M80 160 5400 PATA 8 HM160JC
120 5400 PATA 8 HM120IC
80 5400 PATA 8 HM080HC
M60S 120 5400 SATA 8 HM120JI
100 5400 SATA 8 HM100JI
60 5400 SATA 8 HM060HI
M60 120 5400 PATA 8 HM120JC
100 5400 PATA 8 HM100JC
60 5400 PATA 8 HM060HC
M40S 40 5400 SATA 8 HM040HI
M40S 40 5400 PATA 8 MP0402H
AUGUST 2007BR-07-ALL-001
MEMORY AND ST ORA GE
25
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
1.8“ HARD DISK DRIVES
Family Capacity (GB) RPM Interface Buffer Model
N1 (3600rpm) 60 3600 PATA 2 HS061HA
60 3600 CEATA 2 HS061HP
40 3600 PATA 2 HS041HA
40 3600 CEATA 2 HS041HP
30 3600 PATA 2 HS031GA
30 3600 CEATA 2 HS031GP
20 3600 PATA 2 HS021GA
20 3600 CEATA 2 HS021GP
N1 (4200rpm) 60 4200 PATA 2 HS060HB
60 4200 CEATA 2 HS060HQ
40 4200 PATA 2 HS040HB
40 4200 CEATA 2 HS040HQ
30 4200 PATA 2 HS030GB
30 4200 CEATA 2 HS030GQ
20 4200 PATA 2 HS020GB
20 4200 CEATA 2 HS020GQ
MEMORY AND ST ORA GE
26
Flash-Enabled Drives
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
2.5“ HYBRID HARD DRIVES
Family Capacity (GB) RPM Interface Buffer Model
MH80S 160 5400 SATA 8 HM16HJI
120 5400 SATA 8 HM12HII
80 5400 SATA 8 HM08HHI
NAND-FLASH BASED SSD
Capacity Form Factor Idle Power Part Number Noise Interface
4GB 2.5" 0.1W MC4GE04G5APP-0XA 0dB ATA5
8GB 2.5" 0.1W MC8DE08G5APP-0XA 0dB ATA5
16GB 2.5" 0.1W MC8DE16G5APP-0XA 0dB ATA5
32GB 2.5" 0.1W MCAQE32G5APP-0XA 0dB ATA5
4GB 1.8" 0.1W MC4GE04G8APR-0X 0dB ATA5
8GB 1.8" 0.1W MC8DE08G8APR-0XA 0dB ATA5
16GB 1.8" 0.1W MCAQE16G8APR-0XA 0dB ATA5
32GB 1.8" 0.1W MCBOE32G8APR-0XA 0dB ATA5
64GB 1.8" 0.1W 0dB ATA5
8GB Slim Card Module 0.1W 0dB ATA5
16GB Slim Card Module 0.1W 0dB ATA5
32GB Slim Card Module 0.1W 0dB ATA5
MEMORY AND ST ORA GE
27
Optical Storage Solutions
SAMSUNG SEMICONDUCTOR, INC.
AUGUST 2007 BR-07-ALL-001
EXTERNAL DVD DRIVES
External DVD Writer Slot-in Slim External DVD Writer
SE-S184M SE-T084L
Drive T ype External External, Slot-in, Slim
Dimensions (WxHxD) 163x50x232mm 143x19x157mm
Interface USB 2.0 USB 2.0
Buffer Memory 2MB 2MB
Disc Capacity (Max) Up to 4.7GB Single Layer / 8.5GB Double Layer Up to 4.7GB Single Layer / 8.5GB Double Layer
Seek T ime (Ave) DVD-ROM: 130ms DVD-ROM: 130ms
CD-ROM: 110ms CD-ROM: 130ms
Data Transfer Rate Media TypeMB/s Write MB/s Read Media Type MB/s Write MB/s Read
(Max) DVD+R 24.3 18x 16.2 12x DVD+R 10.8 8x 10.8 8x
DVD+R DL 10.8 8x 10.8 8x DVD+R DL 8.1 6x 10.8 8x
DVD+RW 10.8 8x 10.8 8x DVD+RW 10.8 8x 10.8 8x
DVD-R 24.3 18x 16.2 12x DVD-R 10.8 8x 10.8 8x
DVD-R DL 10.8 8x 10.8 8x DVD-R DL 5.4 4x 10.8 8x
DVD-RAM 21.6 12x 21.6 12x DVD-RAM 6.75 5x 6.75 5x
DVD-RW 8.1 6x 10.8 8x DVD-RW 8.1 6x 10.8 8x
DVD-ROM - - 21.6 16x DVD-ROM - - 10.8 8x
CD-ROM - - 7.2 48x CD-ROM - - 3.6 24x
CD-R 7.2 48x 6.0 40x CD-R 3.6 24x 3.6 24x
CD-RW 7.2 32x 6.0 40x CD-RW 3.6 24x 3.6 24x
Burst Transfer Rate (Max) PIO Mode 16.6MB/s
Ultra DMA Mode 2 33.3MB/s
LightScribe V1.2 <20min Draft <20min Draft
Full Labling Time <28min Normal <28min Normal
<36min Best <36min Best
Supported Disks DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM
DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM
CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA
CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD
CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text
LightScribe DVD±R / LightScribe CD-R LightScribe DVD±R / LightScribe CD-R
Other RoHS Compliant Both 12cm and 8cm standard round discs supported
Vertical Mount ing Supported Operates on either AC Adaptor or USB Power
Manual Disc Ejection in case of power loss
MEMORY AND ST ORA GE
28
Optical Storage Solutions
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
INTERNAL DVD DRIVES Internal DVD-ROM Drives Internal DVD Writer
SH-D163A/B SH-D162C SH-S182D/M/F
Drive Type Internal Internal Internal
Dimensions (WxHxD) 148.2x42x170mm 148.2x42x184mm 148.2x42x170mm
Interface S-ATA EIDE / ATAPI EIDE / ATAPI
Buffer Memory 198KB 256KB 2MB
Disc Capacity (Max) CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer Up to 4.7GB Single Layer / 8.5GB Double Layer
Seek T ime (Ave) DVD: 150ms DVD: 150ms DVD-ROM: 130ms
CD: 130ms CD: 130ms CD-ROM: 110ms
Data Transfer Rate (Max) Media Activity MB/s Read Media Activity MB/s Read Media MB/sWrite MB/s Read
Type Type Type
DVD Read 21.6 48x DVD Read 21.6 48x DVD+R 24.3 18x 16.2 12x
CD Read 7.2 16x CD Read 7.2 16x DVD+R DL 10.8 8x 10.8 8x
DVD+R DL (SH-S128F) 10.8 10x 10.8 8x
DVD+RW 10.8 8x 10.8 8x
DVD-R 24.3 18x 16.2 12x
DVD-R DL 10.8 8x 10.8 8x
DVD-RAM 16.2 12x 16.2 12x
DVD-RW 8.1 6x 10.8 8x
DVD-ROM - - 21.6 16x
CD-ROM - - 7.2 48x
CD-R 7.2 48x 6.0 40x
CD-RW 4.8 32x 6.0 40x
Burst Transfer Rate (Max) S-ATA 1.5Gb/s PIO Mode 4 16.6MB/s PIO Mode 4 16.6MB/s
DMA Mode 2 16.6MB/s Ultra DMA Mode 2 33.3MB/s Ultra DMA Mode 2 33.3MB/s
LightScribe V1.2 Full Labling Time <20min Draft (SH-S128M only) <28min Normal (SH-S128M only) <36min Best (SH-S128M only)
Supported Disks DVD+R / DVD+RW / DVD-RAM DVD+R / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM
DVD-R / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM
CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA
Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex CD-Audio / Video-CD / Photo CD
CD-I (FMV) / CD-Extra / CD-Text
LightScribe DVD±R / LightScribe CD-R (SH-S128M only)
Other RoHS Compliant RoHS Compliant RoHS Compliant
Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported Buffer Under Run Free
Motorized Tray Motorized Tray
MPEG II Card and Soft MPEG Compatible MPEG II Card and Soft MPEG Compatible
MEMORY AND ST ORA GE
29
Optical Storage Solutions
SAMSUNG SEMICONDUCTOR, INC.
INTERNAL DVD DRIVES 20x DVD Writer Internal S-ATA DVD Writer 20x S-ATA DVD Writer
SH-S202G SH-S183A/L SH-S203B
Drive Type Internal Internal Internal
Dimensions (WxHxD) 148.2x42x170mm 148.2x42x170mm 148.2x42x170mm
Interface EIDE / ATAPI S-ATA S-ATA
Buffer Memory 2MB 2MB 2MB
Disc Capacity (Max) Up to 4.7GB Single Layer / 8.5GB Double Layer Up to 4.7GB Single Layer / 8.5GB Double Layer Up to 4.7GB Single Layer / 8.5GB Double Layer
Seek T ime (Ave) DVD-ROM: 130ms DVD-ROM: 130ms DVD-ROM: 130ms
CD-ROM: 110ms CD-ROM: 110ms CD-ROM: 110ms
Data Transfer Rate (Max) Media MB/s Write MB/s Read Media MB/s Write MB/s Read Media MB/s Write MB/s Read
Type Type Type
DVD+R 27.0 20x 21.6 16x DVD+R 24.3 18x 16.2 12x DVD+R 27.0 20x 21.6 16x
DVD+R DL 16.2 12x 16.2 12x DVD+R DL 10.8 8x 10.8 8x DVD+R DL 21.6 16x 16.2 12x
DVD+RW 10.8 8x 16.2 12x DVD+RW 10.8 8x 10.8 8x DVD+RW 10.8 8x 16.2 12x
DVD-R 27.0 20x 21.6 16x DVD-R 24.3 18x 16.2 12x DVD-R 27.0 20x 21.6 16x
DVD-R DL 16.2 12x 16.2 12x DVD-R DL 10.8 8x 10.8 8x DVD-R DL 16.2 12x 16.2 12x
DVD-RAM 16.2 12x 16.2 12x DVD-RAM 16.2 12x 21.6 12x DVD-RAM 16.2 12x 16.2 12x
DVD-RW 8.1 6x 16.2 12x DVD-RW 8.1 6x 10.8 8x DVD-RW 8.1 6x 16.2 12x
DVD-ROM - - 21.6 12x DVD-ROM - - 21.6 16x DVD-ROM - - 21.6 16x
CD-ROM - - 7.2 48x CD-ROM - - 7.2 48x CD-ROM - - 7.2 48x
CD-R 7.2 48x 6.0 40x CD-R 7.2 48x 6.0 40x CD-R 7.2 48x 6.0 40x
CD-RW 4.8 32x 6.0 40x CD-RW 4.8 32x 6.0 40x CD-RW 4.8 32x 6.0 40x
Burst Transfer Rate (Max) PIO Mode 16.6MB/s S-ATA 1.5Gb/s S-ATA 1.5Gb/s
Ultra DMA Mode 2 33.3MB/s
LightScribe V1.2 Full Labling Time <20min Draft (SH-S183L only)
<28min Normal (SH-S183L only)
<36min Best (SH-S183L only)
Supported Disks DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM
DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM
CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA
CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD
CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text
LightScribe DVD±R / LightScribe CD-R (SH-S183L only)
Other RoHS Compliant RoHS Compliant RoHS Compliant
Buffer Under Run Free Buffer Under Run Free Buffer Under Run Free
Motorized Tray
Supports Mt. Rainier
AUGUST 2007 BR-07-ALL-001
MEMORY AND ST ORA GE
30
Optical Storage Solutions
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
INTERNAL DVD DRIVES Slim DVD Writers
SN-T082A/L SN-S082M SN-S082D
Drive Type Internal Internal Internal
Dimensions (WxHxD) 128x12.7x129mm 128x12.7x129mm 128x12.7x129mm
Interface EIDE / ATAPI EIDE / ATAPI EIDE / ATAPI
Buffer Memory 2MB 2MB 2MB
Disc Capacity (Max) Up to 4.7GB Single Layer / 8.5GB Double Layer Up to 4.7GB Single Layer / 8.5GB Double Layer Up to 4.7GB Single Layer / 8.5GB Double Layer
Seek T ime (Ave) DVD-ROM: 110ms DVD-ROM: 110ms DVD-ROM: 110ms
CD-ROM: 110ms CD-ROM: 110ms CD-ROM: 110ms
Data Transfer Rate (Max) Media MB/s Write MB/s Read Media MB/s Write MB/s Read Media MB/s Write MB/s Read
Type Type Type
DVD+R 10.8 8x 10.8 8x DVD+R 10.8 8x 10.8 8x DVD+R 10.8 8x 10.8 8x
DVD+R DL 8.1 6x 10.8 8x DVD+R DL 8.1 6x 10.8 8x DVD+R DL 8.1 6x 10.8 8x
DVD+RW 10.8 8x 10.8 8x DVD+RW 10.8 8x 10.8 8x DVD+RW 10.8 8x 10.8 8x
DVD-R 10.8 8x 10.8 8x DVD-R 10.8 8x 10.8 8x DVD-R 10.8 8x 10.8 8x
DVD-R DL 5.4 4x 10.8 8x DVD-R DL 5.4 4x 10.8 8x DVD-R DL 5.4 4x 10.8 8x
DVD-RAM 6.75 5x 6.75 5x DVD-RAM 6.75 5x 6.75 5x DVD-RAM 6.75 5x 6.75 5x
DVD-RW 8.1 6x 10.8 8x DVD-RW 8.1 6x 10.8 8x DVD-RW 8.1 6x 10.8 8x
DVD-ROM - - 10.8 8x DVD-ROM - - 10.8 8x DVD-ROM - - 10.8 8x
CD-ROM - - 3.6 24x CD-ROM - - 3.6 24x CD-ROM - - 3.6 24x
CD-R 3.6 24x 3.6 24x CD-R 3.6 24x 3.6 24x CD-R 3.6 24x 3.6 24x
CD-RW 3.6 24x 3.6 24x CD-RW 3.6 24x 3.6 24x CD-RW 3.6 24x 3.6 24x
Burst Transfer Rate (Max) PIO Mode 4 16.6MB/s
DMA Mode 2 16.6MB/s
Ultra DMA Mode 2 33.3MB/s
LightScribe V1.2 Full Labling Time <20min Draft (SN-T082L only) <20min Draft
<28min Normal (SN-T082L only) <28min Normal
<36min Best (SN-T082L only) <36min Best
Supported Disks DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD+R / DVD+R DL / DVD+RW / DVD-RAM
DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM
CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-ROM / CD-ROM/XA
CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD
CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text CD-I (FMV) / CD-Extra / CD-Text
LightScribe DVD±R / LightScribe CD-R (SM-T082L only) LightScribe DVD±R / LightScribe CD-R
Other Slot-In Type Loader RoHS Compliant RoHS Compliant
Supports disc buringin from USB BUS Power Buffer Under Run Free Buffer Under Run Free
Both 12cm and 8cm round discs supported Drawer Type Tray Drawer Type Tray
Manual Disc Ejection in case of power loss
MEMORY AND ST ORA GE
31
Optical Storage Solutions
SAMSUNG SEMICONDUCTOR, INC.
INTERNAL COMBO DRIVES
Internal Combo Slim Drive Internal Combo Drives
SN-M242D SH-M523A/B SH-M522C
Drive Type Internal Internal Internal
Dimensions (WxHxD) 128x12.7x129mm 148.2x42x170mm 148.2x42x184mm
Interface EIDE / ATAPI S-ATA EIDE / ATAPI
Buffer Memory 2MB 2MB 2MB
Disc Capacity (Max) CD-RW Type 80 700MB / CD-R Type 90 800MB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer
Seek T ime (Ave) DVD: 120ms DVD: 150ms DVD: 150ms
CD: 130ms CD: 130ms CD: 130ms
Data Transfer Rate (Max) Media Type Activity MB/s Read Media Type Activity MB/s Read Media Type Activity MB/s Read
CD Record 3.6 24x CD Record 7.8 52x CD Record 7.8 52x
CD Rewrite 3.6 24x CD Rewrite 4.8 32x CD Rewrite 4.8 32x
CD Read 3.6 24x CD Read 7.8 52x CD Read 7.8 52x
DVD Read 10.8 8x DVD Read 21.6 16x DVD Read 21.6 16x
Burst Transfer Rate (Max) PIO Mode 4 16.6MB/s S-ATA 1.5Gb/s PIO Mode 4 16.6MB/s
DMA Mode 2 16.6MB/s DMA Mode 2 16.6MB/s
Ultra DMA Mode 2 33.3MB/s Ultra DMA Mode 2 33.3MB/s
Supported Disks DVD+R / DVD+RW / DVD-RAM DVD+R / DVD+RW / DVD-RAM DVD+R / DVD+RW / DVD-RAM
DVD-R / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-RW / DVD-Video / DVD-ROM
CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA
CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD CD-Audio / Video-CD / Photo CD
CD-I / CD-Extra / CD-Text CD-I / CD-Extra / CD-Text CD-I / CD-Extra / CD-Text
Other RoHS Compliant RoHS Compliant RoHS Compliant
Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported
Drawer T ype Tray Motorized Tray Motorized Tray
Buffer Under Run Free Buffer Under Run Free Buffer Under Run Free
Supports Mt. Rainier Supports Mt. Rainier
AUGUST 2007 BR-07-ALL-001
MEMORY AND ST ORA GE
INTERNAL CD DRIVES Internal CD-ROM Drives CD-ROM Slim Drive
SH-C523A SH-C522C SN-C242C
Drive Type Internal Internal Internal
Dimensions (WxHxD) 148.2x42x184mm 148.2x42x184mm 128x12.7x129mm
Interface S-ATA EIDE / ATAPI EIDE / ATAPI
Buffer Memory 96KB 96KB 96KB
Disc Capacity (Max) CD-RW T ype 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer CD-RW Type 80 700MB / CD-R Type 90 800MB
Seek Time (Ave) CD: 90ms CD: 90ms CD: 130ms
Data Transfer Rate (Max) Media Type Activity MB/s Read Media Type Activity MB/s Read Media Type Activity MB/s Read
CD Read 7.8 52x CD Read 7.8 52x CD Read 3.6 24x
Burst Transfer Rate (Max) S-ATA 1.5Gb/s PIO Mode 4 16.6MB/s PIO Mode 4 16.6MB/s
DMA Mode 2 16.6MB/s DMA Mode 2 16.6MB/s
Ultra DMS Mode 2 33.3MB/s
Supported Disks CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA DVD+R / DVD+RW / DVD-RAM / DCD-R
Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex DVD-ROM / DVD-Video / Video-CD / Photo CD
CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA
CD-I / CD-Extra / CD-Text / CD-I / CD-Extra / CD-Text
Other RoHS Compliant RoHS Compliant RoHS Compliant
Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported Horizontal or Vertical Drive Mounting Supported
Motorized Tray Motorized T r ay Drawer Type Tray
Optional Ultra DMA Burst Transfer 80mm and 120mm CD Disc Diameter
INTERNAL CD DRIVES Internal CD-RW Drive
SH-R522C
Drive T ype Internal
Dimensions (WxHxD) 148.2x42x184mm
Interface EIDE / ATAPI
Buffer Memory 2MB
Disc Capacity (Max) CD-RW Type 80 700MB / CD-R Type 90 800MB
Seek T ime (Ave) CD: 100ms
Data Transfer Rate (Max) Media Type Activity MB/s Read
CD Record 7.8 52x
CD Rewrite 4.8 32x
CD Read 7.8 52x
Burst Transfer Rate PIO Mode 4 16.6MB/s
DMA Mode 2 16.6MB/s
Ultra DMA Mode 2 33.3MB/s
Supported Disks CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA
Video-CD / Photo CD / CD-I / CD-Extra / CD-Text
Other RoHS Compliant
Horizontal or Vertical Drive Mounting Supported
Motorized Tray
Buffer Under Run Free
Supports Mt. Rainier
32
Optical Storage Solutions
SAMSUNG SEMICONDUCTOR, INC. AUGUST 2007BR-07-ALL-001
MEMORY AND ST ORA GE
Samsung offers the industr y’s broadest memor y
portfolio and has maintained its leadership in
memory technology for 14 straight years. Its
DRAM, flash and SRAM products are found in
computers – from ultra-mobile portables to
powerful servers – and in a wide range of
handheld devices such as smartphones and MP3
players. Samsung also delivers the industry’s
widest line of storage products. These include
optical and hard disk drives as well as flash
storage, such as the all-flash Solid State Drive
and a range of embedded and removable flash
storage products.
For more information, visit our website: www.usa.samsungsemi.com
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time
of publication. Samsung assumes no responsibility,however,for possible errors or omissions,or for any consequences
resulting from the use of the information contained herein. Samsung reserves the right to make changes in its prod-
ucts or product specifications with the intent to improve function or design at any time and without notice and is not
required to update this documentation to reflect such changes. This publication does not convey to a purchaser of
semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no
warranty,representation, or guarantee regarding the suitability of its products for any particular purpose,nor does
Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims
any and all liability, including without limitation any consequential or incidental damages.
www.usa.samsungsemi.com
Copyright 2007. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. All other names and brands may be claimed as the
property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice.
BR-07-ALL-001 Printed 8/07
