The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 0.92 Revised May 24, 2013
SiT8920
-55 to +125°C Oscillator
Preliminary
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdge™ option for EMI reduction.
Features Applications
Any frequency between 1 MHz and 110 MHz accurate to 6 decimal
places
Ruggedized equipment in harsh operating environment
Operating temperature from -55°C to 125°C
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±25 PPM
Industry best G-sensitivity of 0.1 PPB/G
Low power consumption of 3.6 mA typical
Standby mode for longer battery life
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm
Pb-free, RoHS and REACH compliant
Optional unique device ID for complete traceability (contact SiTime)
Electrical Characteristics[1, 2]
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
Frequency Range
Output Frequency Range f1–110MHz
Frequency Stability and Aging
Frequency Stability F_stab -25 – +25 PPM Inclusive of Initial tolerance at 25°C, and variations over
operating temperature, rated power supply voltage and load.
-50 – +50 PPM
Aging Ag –1.5 – 1.5 PPM 1st year at 25°C
Operating Temperature Range
Operating Temperature Range T_use -55 – +125 °C
Supply Voltage and Current Consumption
Supply Voltage Vdd 1.62 1.8 1.98 V Contact SiTime for 1.5V support
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.7 3.0 3.3 V
2.97 3.3 3.63 V
2.25 – 3.63 V
Current Consumption Idd – 3.9 5 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
– 3.6 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V
Standby Current I_std – 2.5 10 AST
= GND, Vdd = 3.0V or 3.3V, Output is Weakly Pulled Down
–2.510AST
= GND, Vdd = 2.5V or 2.8V, Output is Weakly Pulled Down
–15AST
= GND, Vdd = 1.8V, Output is Weakly Pulled Down
LVCMOS Output Characteristics
Duty Cycle DC 45 – 55 % All Vdds
Rise/Fall Time Tr, Tf – 1.2 2.5 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
– 1.5 3.5 ns Vdd =1.8V, 20% - 80%
– 1.5 3 ns Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage VIH 70% – – Vdd Pin 1, OE or ST
Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST
Input Pull-up Impedence Z_in – 100 250 kPin 1, OE logic high or logic low, or ST logic high
2––MPin 1, ST logic low