SiT8920 Preliminary -55 to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications Any frequency between 1 MHz and 110 MHz accurate to 6 decimal places Operating temperature from -55C to 125C 100% pin-to-pin drop-in replacement to quartz-based XO Excellent total frequency stability as low as 25 PPM Industry best G-sensitivity of 0.1 PPB/G Low power consumption of 3.6 mA typical Standby mode for longer battery life LVCMOS/HCMOS compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm Pb-free, RoHS and REACH compliant Optional unique device ID for complete traceability (contact SiTime) Ruggedized equipment in harsh operating environment Electrical Characteristics[1, 2] Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 - 110 MHz Frequency Stability and Aging Frequency Stability Aging F_stab Ag -25 - +25 PPM -50 - +50 PPM Inclusive of Initial tolerance at 25C, and variations over operating temperature, rated power supply voltage and load. - 1.5 PPM 1st year at 25C -1.5 Operating Temperature Range Operating Temperature Range T_use -55 - +125 C Supply Voltage and Current Consumption Supply Voltage Current Consumption Standby Current Vdd Idd I_std 1.62 1.8 1.98 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 - 3.63 V - 3.9 5 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V - 3.6 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V - 2.5 10 A ST = GND, Vdd = 3.0V or 3.3V, Output is Weakly Pulled Down - 2.5 10 A ST = GND, Vdd = 2.5V or 2.8V, Output is Weakly Pulled Down 1 5 A ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down - Contact SiTime for 1.5V support LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 - 55 % All Vdds Tr, Tf - 1.2 2.5 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% - 1.5 3.5 ns Vdd =1.8V, 20% - 80% - 1.5 3 ns Vdd = 2.25V - 3.63V, 20% - 80% Output High Voltage VOH 90% - - Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL - - 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input High Voltage VIH 70% - - Vdd Pin 1, OE or ST Input Low Voltage VIL - - 30% Vdd Pin 1, OE or ST Input Pull-up Impedence Z_in - 100 250 k Pin 1, OE logic high or logic low, or ST logic high 2 - - M Pin 1, ST logic low Input Characteristics Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdgeTM option for EMI reduction. SiTime Corporation Rev. 0.92 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised May 24, 2013 SiT8920 -55 to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Electrical Characteristics[1, 2](continued) Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time Enable/Disable Time Resume Time T_start - - 5 ms T_oe - - 150 ns T_resume - - 5 ms Measured from the time Vdd reaches its rated minimum value Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter T_jitt RMS Phase Jitter (random) T_phj - 2 4 ps f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V - 2 4.5 ps f = 20 MHz, Vdd = 1.8V - 0.7 1 ps Integration bandwidth = 900 kHz to 7.5 MHz - 1.5 3 ps Integration bandwidth = 12 kHz to 20 MHz Notes: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdgeTM option for EMI reduction. Pin Description Pin 1 Symbol H or Open[3]: specified frequency output L: output is high impedance. Only output driver is disabled. Standby H or Open[3]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. OE/ ST 2 GND Power Electrical ground[4] 3 OUT Output Oscillator output 4 Top View Functionality Output Enable VDD Power Power supply voltage OE/ST 1 4 VDD GND 2 3 OUT [4] Notes: 3. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment. 4. A capacitor value of 0.1 F between Vdd and GND is recommended. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C VDD -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C Junction Temperature - 150 C Thermal Consideration JA, 4 Layer Board JA, 2 Layer Board JC, Bottom 7050 191 263 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 124 227 26 Package C/W) (C/W) (C/W) Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C Rev. 0.92 Page 2 of 5 www.sitime.com SiT8920 -55 to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Dimensions and Patterns Package Size - Dimensions (Unit: mm)[5] Recommended Land Pattern (Unit: mm)[6] 2.0 x 1.6 x 0.75 mm 0.65 2.00.05 #3 #1 0.48 1.2 0.750.05 YXXXX #2 1.5 #4 0.93 1.60.05 #3 #2 #1 0.8 #4 0.68 0.9 2.5 x 2.0 x 0.75 mm 1.9 2.2 2.5 0.05 #3 1.5 1.9 #2 #2 1.0 1.2 0.5 YXXXX #1 #4 1.1 #3 2.0 0.05 #4 1.00 #1 0.75 0.05 0.75 1.4 1.1 3.2 x 2.5 x 0.75 mm 3.2 0.05 #3 #4 0.7 1.9 0.9 #2 #1 0.9 0.75 0.05 #2 1.2 YXXXX #1 2.2 2.1 #3 2.5 0.05 #4 1.4 5.0 x 3.2 x 0.75 mm 2.54 5.0 0.05 #2 #4 #2 #1 2.2 1.1 1.6 #1 0.75 0.05 YXXXX #3 0.8 #3 3.2 0.05 #4 2.39 1.15 1.5 Notes: 5. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 6. A capacitor of value 0.1 F between Vdd and GND is recommended. Rev. 0.92 Page 3 of 5 www.sitime.com SiT8920 -55 to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Dimensions and Patterns Package Size - Dimensions (Unit: mm)[7] Recommended Land Pattern (Unit: mm)[8] 7.0 x 5.0 x 0.90 mm 5.08 3.81 2.6 5.08 0.90 0.10 2.0 1.1 YXXXX 5.0 0.05 7.0 0.05 1.4 2.2 Notes: 7. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 8. A capacitor of value 0.1 F between Vdd and GND is recommended. Rev. 0.92 Page 4 of 5 www.sitime.com SiT8920 -55 to +125C Oscillator The Smart Timing Choice The Smart Timing Choice Ordering Information SiT8920AM -12-18E - 25 .000000T Packing Method "T": 12 mm Tape & Reel, 3ku reel "Y": 12 mm Tape & Reel, 1ku reel "D": 8 mm Tape & Reel, 3ku reel "E": 8 mm Tape & Reel, 1ku reel Blank for Bulk Part Family "SiT8920" Revision Letter "A" is the revision Frequency 1.00000 to 110.00000 MHz Temperature Range Feature Pin "E" for Output Enable "S" for Standby "M" for -55C to 125C Output Driver Strength[9] "-" Default Supply Voltage "18" for 1.8V 10% "25" for 2.5V 10% "28" for 2.8V 10% "30" for 3.0V 10% "33" for 3.3V 10% "XX" for 2.25V to 3.63V Package Size "7" for 2.0 x 1.6 mm "1" for 2.5 x 2.0 mm "2" for 3.2 x 2.5 mm "3" for 5.0 x 3.2 mm "8" for 7.0 x 5.0 mm Frequency Stability "2" for 25 PPM "3" for 50 PPM Note: 9. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdgeTM option for EMI reduction. Ordering Codes for Supported Tape & Reel Packing Method[10] Device Size 8 mm T&R (3ku) 8 mm T&R (1ku) 12 mm T&R (3ku) 12 mm T&R (1ku) 16 mm T&R (3ku) 16 mm T&R (1ku) 2.0 x 1.6 mm D E - - - - 2.5 x 2.0 mm D E - - - - 3.2 x 2.5 mm D E - - - - 5.0 x 3.2 mm - - T Y - - 7.0 x 5.0 mm - - - - T Y Note: 10. For "-", contact SiTime for availability. (c) SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. 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Rev. 0.92 Page 5 of 5 www.sitime.com The Smart Timing Choice The Smart Timing Choice Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com The Smart Timing Choice The Smart Timing Choice Silicon MEMS Outperforms Quartz SiTime Corporation 990 Almanor Avenue Silicon MEMS Outperforms Quartz Rev. 1.0 Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised January 16, 2013 Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime's oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class: * SiTime's MEMS resonators are vacuum sealed using an advanced Epi-SealTM process, which eliminates foreign particles and improves long term aging and reliability * World-class MEMS and CMOS design expertise Why is SiTime Best in Class: * Internal differential architecture for best common mode noise rejection * Electrostatically driven MEMS resonator is more immune to EMS SiTime vs Quartz Electro Magnetic Susceptibility (EMS) Mean Time Between Failure (Million Hours) - 30 - 39 500 IDT (Fox) 38 SiTime 20X Better 28 Epson TXC 16 Pericom 14 Average Spurs (dB) SiTime - 40 - 40 - 42 - 43 - 45 - 50 - 60 SiTime 54X Better - 70 - 73 - 80 - 90 200 0 Kyocera 600 400 Figure 1. Reliability Comparison[1] Epson TXC CW SiLabs SiTime Figure 3. Electro Magnetic Susceptibility (EMS)[3] Best Aging Best Power Supply Noise Rejection Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. SiTime's MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. * SiTime's MEMS resonators are vacuum sealed using an advanced Epi-SealTM process, which eliminates foreign particles and improves long term aging and reliability * Inherently better immunity of electrostatically driven MEMS resonator SiTime MEMS vs. Quartz Aging 10 SiTime MEMS Oscillator Quartz Oscillator 8.0 Aging (PPM) 8 SiTime 2X Better 6 4 2 0 3.0 3.5 1.5 1-Year 10-Year Figure 2. Aging Comparison[2] Silicon MEMS Outperforms Quartz Rev. 1.0 Why is SiTime Best in Class: * On-chip regulators and internal differential architecture for common mode noise rejection * Best analog CMOS design expertise Additive Integrated Phase Jitter per mVp-p Injected Noise (ps/mv) Why is SiTime Best in Class: Power Supply Noise Rejection SiTIme 5.0 NDK Epson Kyocera 4.0 3.0 2.0 SiTime SiTime 3X Better 1.0 0.0 10 100 1,000 Power Supply Noise Frequency (kHz) 10,000 Figure 4. Power Supply Noise Rejection[4] www.sitime.com Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime's oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class: * The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz * Center-anchored MEMS resonator is the most robust design * The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz * Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC Epson Connor Winfield Kyocera SiLabs 100.00 10.00 1.00 SiTime Up to 30x Better 0.10 10 100 Vibration Frequency (Hz) Figure 5. Vibration Robustness[5] 1000 Peak Frequency Deviation (PPM) Vibration Sensitivity vs. Frequency SiTime 16 14 Differential XO Shock Robustness - 500 g 14.3 12.6 12 10 8 SiTime Up to 25x Better 6 3.9 4 2.9 2.5 2 0.6 0 Kyocera Epson TXC CW SiLabs SiTime Figure 6. Shock Robustness[6] Notes: 1. Data Source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): * According to IEC EN61000-4.3 (Electromagnetic compatibility standard) * Field strength: 3V/m * Radiated signal modulation: AM 1 kHz at 80% depth * Carrier frequency scan: 80 MHz - 1 GHz in 1% steps * Antenna polarization: Vertical * DUT position: Center aligned to antenna Devices used in this test: SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: * MIL-STD-883F Method 2002 * Condition A: half sine wave shock pulse, 500-g, 1ms * Continuous frequency measurement in 100 s gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3 7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. Silicon MEMS Outperforms Quartz Rev. 1.0 www.sitime.com Document Feedback Form The Smart Timing Choice The Smart Timing Choice SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com. 1. Does the Electrical Characteristics table provide complete information? Yes No If No, what parameters are missing? _________________________________________________________________________________________________ 2. Is the organization of this document easy to follow? Yes No If "No," please suggest improvements that we can make: _________________________________________________________________________________________________ 3. Is there any application specific information that you would like to see in this document? (Check all that apply) EMI Termination recommendations Shock and vibration performance Other If "Other," please specify: _________________________________________________________________________________________________ 4. Are there any errors in this document? Yes No If "Yes", please specify (what and where): _________________________________________________________________________________________________ 5. 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