Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ALD1107/ALD1117
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1107/ALD1117 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC, operating environment. The ALD1107/ALD1117
are building blocks for differential amplifier input stages, transmission
gates, and multiplexer applications, current sources and many precision
analog circuits.
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog signal processing
BLOCK DIAGRAM
FEATURES
• Low threshold voltage of -0.7V
• Low input capacitance
• Low Vos 2mV typical
• High input impedance -- 1014Ω typical
• Negative current (IDS) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 109
• Low input and output leakage currents
• RoHS compliant
PIN CONFIGURATION
TOP VIEW
SBL, PBL, DB PACKAGES
TOP VIEW
SAL, PAL, DA PACKAGES
Operating Temperature Range*
0°C to +70°C0°C to +70°C -55°C to +125°C
8-Pin SOIC 8-Pin Plastic Dip 8-Pin CERDIP
Package Package Package
ALD1117SAL ALD1117PAL ALD1117DA
14-Pin SOIC 14-Pin Plastic Dip 14-Pin CERDIP
Package Package Package
ALD1107SBL ALD1107PBL ALD1107DB
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
DP2
GP2
SP2
GP1
SP1
1
2
3
45
6
7
8
DP1
V+
V-
ALD1117
DP2
GP2
SP2
GP3
SP3
GP1
SP1
DP4
GP4
1
2
3
4
5
6
78
9
10
11
12
13
14
DP1
V
+
V
-
DP3
SP4
ALD1107
D
P1
(1) D
P2
(8)
~
G
P1
(2)
S
P1
(3) S
P2
(6)
V - (4)
V+ (5)
G
P2
(7)
ALD1117
D
P1
(1) D
P2
(14)
G
P1
(2)
S
P1
(3) S
P2
(12)
V+ (11)
G
P2
(13)
D
P3
(10) D
P4
(5)
G
P3
(9)
S
P3
(8) S
P4
(7)
~
V- (4)
V+ (11)
G
P4
(6)
ALD1107
ALD1107/ALD1117 Advanced Linear Devices 2 of 11
Drain-source voltage, VDS -10.6V
Gate-source voltage, VGS -10.6V
Power dissipation 500mW
Operating temperature range SAL, PAL, SBL, PBL packages 0°C to +70°C
DA, DB packages -55°C to +125°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ABSOLUTE MAXIMUM RATINGS
Gate Threshold VT-0.4 -0.7 -1.0 -0.4 -0.7 -1.0 V IDS = -1.0µA VGS = VDS
Voltage
Offset Voltage VOS 2 10 2 10 mV IDS = -10µA VGS = VDS
VGS1-VGS2
Gate Threshold
Temperature TCVT -1.3 -1.3 mV/°C
Drift2
On Drain IDS (ON) -1.3 -2 -1.3 -2 mA VGS = VDS = -5V
Current
Transconductance GIS 0.25 0.67 0.25 0.67 mmho VDS = -5V IDS = -10mA
Mismatch ∆Gfs 0.5 0.5 %
Output GOS 40 40 µmho VDS = -5V IDS = -10mA
Conductance
Drain Source RDS (ON) 1200 1800 1200 1800 ΩVDS = -0.1V VGS = -5V
On Resistance
Drain Source
On Resistance ∆RDS (ON) 0.5 0.5 % VDS = -0.1V VGS = -5V
Mismatch
Drain Source
Breakdown BVDSS -12 -12 V IDS = -1.0µA VGS = 0V
Voltage
Off Drain IDS (OFF) 10 400 10 400 pA VDS = -12V VGS = 0V
Current144nAT
A
= 125°C
Gate Leakage IGSS 0.1 10 0.1 10 pA VDS = 0V VGS = -12V
Current 1 1 nA TA = 125°C
Input CISS 13 13pF
Capacitance2
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
ALD1107 ALD1117 Test
Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
Notes: 1 Consists of junction leakage currents
2 Sample tested parameters
ALD1107/ALD1117 Advanced Linear Devices 3 of 11
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE CURRENT
(mA)
-10
-7.5
-5.0
-2.5
0
V
BS
= 0V
T
A
= 25°C
-10V
-8V
-6V
-4V
-2V
0-8-2 -6-4 -10 -12
V
GS
= -12V
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE CURRENT
(µA)
-320 -160 0 160 320
-500
500
250
0
-250
-4V
V
GS
= -12V
-6V
V
BS
= 0V
T
A
= 25°C
-2V
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
GATE SOURCE VOLTAGE (V)
0 -0.8 -1.6 -2.4 -3.2 -4.0
-20
-15
-10
-5
0
DRAIN SOURCE CURRENT
(µA)
V
BS
= 0V
4V
6V
8V
10V
12V
V
GS
= V
DS
T
A
= 25°C
2V
-12
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (V)
0-8-2 -6-4 -10
FORWARD TRANSCONDUCTANCE
(mmho)
1.0
0.5
0.2
0.1
0.05
0.02
0.01
V
BS
= 0V
f = 1KHz I
DS
= -5mA
T
A
= +125°C
T
A
= +25°C
I
DS
= -1mA
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE
(KΩ)
100
10
1
0.1 -20 -4 -6 -8 -10 -12
V
DS
= 0.4V
V
BS
= 0V
T
A
= +125°C
T
A
= +25°C
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
OFF DRAIN SOURCE CURRENT
(pA)
-50 -25 +25 +50 +75 +125+1000
V
DS
= -12V
V
GS
= V
BS
= 0V
1
10
100
1000
ALD1107/ALD1117 Advanced Linear Devices 4 of 11
DIFFERENTIAL AMPLIFIER CURRENT SOURCE MULTIPLICATION
CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL
TYPICAL APPLICATIONS
ISET RSET
Q3
V+ = +5V
I SOURCE
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
I SOURCE = ISET
= V+ -Vt
RSET
= 4
RSET
~
Q1Q2
V+ = +5V
Q4
1/2 ALD1106
or ALD1116
1/2 ALD1107
or ALD1117
V+
PMOS PAIR Q
4
V
IN
-
NMOS PAIRQ
2
Q
1
V
IN
+
Current
Source
Q
3
Q
1
, Q
2
: N - Channel MOSFET
Q
3
, Q
4
: P - Channel MOSFET
V
OUT
1/2 ALD1106
or ALD1116
1/2 ALD1107
or ALD1117
Q
SET,
Q
1
..Q
N
: ALD1106 or ALD1116
N - Channel MOSFET
I
SET
V+ = +5V
I
SOURCE
= I
SET
x N
R
SET
Q
2
Q
3
Q
SET
Q
1
Q
N
V+ = +5V
Q
4
I
SOURCE
R
SET
Q
1
Q
3
I
SET
ON
OFF
Digital Logic Control
of Current Source
Q
1
: N - Channel MOSFET
Q
3,
Q
4
: P - Channel MOSFET
1/2 ALD1107
or ALD1117
1/4 ALD1106
or 1/2 ALD1116
ALD1107/ALD1117 Advanced Linear Devices 5 of 11
CASCODE CURRENT SOURCES
BASIC CURRENT SOURCES
P- CHANNEL CURRENT SOURCE
N- CHANNEL CURRENT SOURCE
ISOURCE
V+ = +5V
RSET
ISET
1
2
3Q1
56
8
Q2
7
ISOURCE = ISET = V+ - Vt
RSET = V+ - 1.0
RSET
Q1, Q2 : N - Channel MOSFET
~= 4
RSET
~
1/2 ALD1106
or ALD1116
V+ = +5V
2
35
67
8
Q
4
I
SOURCE
Q
3
R
SET
I
SET
Q
3
, Q
4
: P - Channel MOSFET
1/2 ALD1107
or ALD1117
I
SET
V+ = +5V
Q
2
I
SOURCE
R
SET
Q
3
Q
1
Q
1
, Q
2
, Q
3
, Q
4
: N - Channel MOSFET
(ALD1101 or ALD1103)
Q
4
ALD1106
I
SET
V+ = +5V
Q
1
Q
3
Q
2
Q
4
I
SOURCE
Q1, Q2, Q3, Q4: P - Channel MOSFET
 (ALD1102 or ALD1103)
I
SOURCE
= I
SET
= V+ - 2Vt
R
SET
= 3
R
SET
~
R
SET
ALD1107
TYPICAL APPLICATIONS (cont.)
ALD1107/ALD1117 Advanced Linear Devices 6 of 11
8 Pin Plastic SOIC Package
SOIC-8 PACKAGE DRAWING
Millimeters Inches
Min Max Min MaxDim
A
A
1
b
C
D-8
E
e
H
L
S
1.75
0.25
0.45
0.25
5.00
4.05
6.30
0.937
8°
0.50
0.053
0.004
0.014
0.007
0.185
0.140
0.224
0.024
0°
0.010
0.069
0.010
0.018
0.010
0.196
0.160
0.248
0.037
8°
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.35
0.18
4.69
3.50
5.70
0.60
0°
0.25
ø
L
C
H
S (45°)
ø
e
A
A
1
b
D
S (45°)
E
ALD1107/ALD1117 Advanced Linear Devices 7 of 11
8 Pin Plastic DIP Package
PDIP-8 PACKAGE DRAWING
b
1
S
b
EE1
D
e
A2
A
1
A
L
ce
1
ø
Millimeters Inches
Min Max Min MaxDim
A
A
1
A
2
b
b
1
c
D-8
E
E
1
e
e
1
L
S-8
ø
3.81
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
0°
5.08
1.27
2.03
1.65
0.51
0.30
11.68
7.11
8.26
2.79
7.87
3.81
2.03
15°
0.105
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
0°
0.200
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
15°
ALD1107/ALD1117 Advanced Linear Devices 8 of 11
8 Pin CERDIP Package
CERDIP-8 PACKAGE DRAWING
A
A
1
b
b
1
C
D-8
E
E
1
e
e
1
L
L
1
L
2
S
Ø
3.55
1.27
0.97
0.36
0.20
--
5.59
7.73
3.81
3.18
0.38
--
0°
5.08
2.16
1.65
0.58
0.38
10.29
7.87
8.26
5.08
--
1.78
2.49
15°
Millimeters Inches
Min Max Min MaxDim 0.140
0.050
0.038
0.014
0.008
--
0.220
0.290
0.150
0.125
0.015
--
0°
0.200
0.085
0.065
0.023
0.015
0.405
0.310
0.325
0.200
--
0.070
0.098
15°
2.54 BSC
7.62 BSC
0.100 BSC
0.300 BSC
EE
1
C
e
1
ø
s
b
L
D
b
1
e
A
L
2
A
1
L
1
ALD1107/ALD1117 Advanced Linear Devices 9 of 11
Millimeters Inches
Min Max Min MaxDim
A
A
1
b
C
D-14
E
e
H
L
S
1.75
0.25
0.45
0.25
8.75
4.05
6.30
0.937
8°
0.50
0.053
0.004
0.014
0.007
0.336
0.140
0.224
0.024
0°
0.010
0.069
0.010
0.018
0.010
0.345
0.160
0.248
0.037
8°
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.35
0.18
8.55
3.50
5.70
0.60
0°
0.25
ø
14 Pin Plastic SOIC Package
SOIC-14 PACKAGE DRAWING
E
D
e
A
A
1
b
S (45°)
L
C
H
S (45°)
ø
ALD1107/ALD1117 Advanced Linear Devices 10 of 11
14 Pin Plastic DIP Package
PDIP-14 PACKAGE DRAWING
b
1
D
S
be
A
2
A
1
A
L
EE1
ce
1
ø
Millimeters Inches
Min Max Min MaxDim
A
A
1
A
2
b
b
1
c
D-14
E
E
1
e
e
1
L
S-14
ø
3.81
0.38
1.27
0.89
0.38
0.20
17.27
5.59
7.62
2.29
7.37
2.79
1.02
0°
5.08
1.27
2.03
1.65
0.51
0.30
19.30
7.11
8.26
2.79
7.87
3.81
2.03
15°
0.105
0.015
0.050
0.035
0.015
0.008
0.680
0.220
0.300
0.090
0.290
0.110
0.040
0°
0.200
0.050
0.080
0.065
0.020
0.012
0.760
0.280
0.325
0.110
0.310
0.150
0.080
15°
ALD1107/ALD1117 Advanced Linear Devices 11 of 11
EE
1
C
e
1
ø
D
s
b
1
e
b
L
A
L
2
A
1
L
1
A
A
1
b
b
1
C
D-14
E
E
1
e
e
1
L
L
1
L
2
S
Ø
3.55
1.27
0.97
0.36
0.20
--
5.59
7.73
3.81
3.18
0.38
--
0°
5.08
2.16
1.65
0.58
0.38
19.94
7.87
8.26
5.08
--
1.78
2.49
15°
Millimeters Inches
Min Max Min MaxDim 0.140
0.050
0.038
0.014
0.008
--
0.220
0.290
0.150
0.125
0.015
--
0°
0.200
0.085
0.065
0.023
0.015
0.785
0.310
0.325
0.200
--
0.070
0.098
15°
2.54 BSC
7.62 BSC
0.100 BSC
0.300 BSC
14 Pin CERDIP Package
CERDIP-14 PACKAGE DRAWING