. TOSHIBA {DISCRETE/OPTO} Sb DEP soa7eso ooo79449 o r 9097250 TOSHIBA CDISCRETE/OPTO) gC 01949 ~~ OD T-33+29 SILICON NPNTRIPLE DIFFUSED TYPE . (DARLINGTON POWER) INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS . Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 103MAX, 3 FEATURES: 120 | Laze02 LJ] a =) . High DC Current Gain : hpg=2000(Min.) (VcR=2V, Ic=2A) of | Id 9 oF 3 ae ha o a MAXIMUM RATINGS (Ta=25 C) 6 tet CHARACTERISTIC SYMBOL | RATING | UNIT | } 2 | Collector-Base Voltage VcBo 300 v 3 | ars Collector-Emitt Volt 250 v ollector-Emitter Voltage VCEO poh nas Emitter-Base Voltage VEBO Vv 22 x Collector Current Ic 6 A $9 ol = oS Base Current Ip 1 A 3 as ~ Collector Power Ta=25'C 2.0 28 Dissipation o Pc W Te=25 c 25 5 1, BASE Junction Temperature Ty 150 Cc 2. COLLECTOR - 5 & BMITTER Storage Temperature Range Tstg ~55~ 150 c - JuDEC - EQUIVALENT CIRCUIT - COLLECTOR BLAT ~ BASE \ _ 1 TOSHIBA 2-10L1A \ ' Weight : 2.1lg ee ee ee eee le : o EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL. TEST CONDITION MIN.| TYP.}| MAX.|UNIT Collector Cut-off Current IcBo Vcp=300V, Ip=0 - ~ 0.5 | mA Emitter Cut-off Current IEBO VEB=5V, Ic=0 - - 0.5 | mA Collector-Emitter Tc=0.5A, L=40mH 250 - - V Sustaining Voltage Vezo(susy tc Ay 5 DC Current Gain hRE(1) VcE=2V, Tc=2A 2000 ~ - hpe(2) | Vce=2V, Ic=4A 200 ~ - Collector-Emitter _ - - _ Saturation Voltage VcE(sat) | Ic=4A, Tp=0,04A 2.0 v BaseEmitter . = _ _ Saturation Voltage Vpe(sat) | Ic=4A, Tp=0. 044 2.5 v Collector Output Capacitance Cob Vcp=50V, Igs0, f=1LMHz - 35 - pF Turn-on Time ton ee ENPUT r anu n wey - 1 - I; Bhi 2 al | ipa S Switching Time | Storage Time tstg BR veil e - 8 - uS Ipi=Tpeg=Q04a = Fall Time tf DUTY GYCLES1% Voo=100V - 5 ~ TOSHIBA CORPORA TION isiiuisniesnnneisuisesseneasetiegeu esse scans AMUN eRe ee aU URC 882TOSHIBA {DISCRETE/OPTO} Sh DEB) qoieso ooo7sso & T 9087250 TOSHIBA (DISCRETE/OPTO) "Set OT950 0% T-33-29 -9spi410 To Vor : hre Ic COMMON EMITTER Ig (A) To=25C a q & a i 3 # & g oa os 500 o 3 a oO 3 A COMMON EMITTER VopRrv 0 100 0.08 O1 a3 1 3 10 20 30 40 50 60 %0O 80 COLLECTOR CURRENT Ig (A) COLLECTOR- EMITTER VOLTAGE Vo CV) Vor(sat) Ic COMMON EMITTER = So mt 3 Ig/ Ip= 100 SAPE OPERATING AREA om ge a Ig MAX (PULSED) 3X & PP a a @ Bw rf Sty aS 6 r (cONTI- 5 a nuous) Be O < 29 25 o de 100 2 ee o - o os Ol as 1 3 10 Ps COLLECTOR CURRENT Ig (A) g Dp o VeR(sat) ~ Ic t OOMMON EMITTER a Ig/ Ip= 100 3 o o Q057 x SINGLE NONREPETITIVE PULSE Tc=25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 001 5 10 COLLECTOR- EMITTER VOLTAGE Vop (V) BASE-EMITTER SATURATION VOLTAGE Vee(eat) CV) a 05 O12 as 1 3 10 COLLECTOR CURRENT Ig (A) { {MINAUUCLATeEUOEERUANSAUANEGEELEASHGSU UU AEUULUEOUEU ISAO OUASLUETGL AULA SUGGES LU TOSHIBA CORPORATION 883