Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.4 * High breakdown voltage (VCEO300V). * Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). * Adoption of MBIT process. 1.5 7.5 3.0 11.0 Features 15.5 3.0 1.6 0.8 0.8 0.7 0.75 1 2 3 ( ) : 2SA1480 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML 1.7 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Conditions Ratings Unit VCBO VCEO (-)300 V (-)300 V VEBO IC (-)5 (-)100 mA ICP (-)200 mA 1.5 W Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C V 7 W 150 C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)200V, IE=0 (-)0.1 A Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)0.1 A DC Current Gain hFE fT VCE=(-)10V, IC=(-)10mA Gain-Bandwidth Product 40* VCE=(-)30V, IC=(-)10mA 150 * : The 2SA1480/2SC3790 are classified by 10mA hFE as follows : Rank C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 320* MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3103TN (KT)/71598HA (KT)/4087TA, TS No.2254-1/5 2SA1480/2SC3790 Continued from preceding page. Parameter Symbol Output Capacitance Cob Reverse Transfer Capacitance typ VCB=(-)30V, f=1MHz VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage min VCB=(-)30V, f=1MHz Cre Collector-to-Emitter Saturation Voltage Ratings Conditions max Unit 2.6 pF (3.1) pF 1.8 pF (2.3) pF IC=(-)20mA, IB=(-)2mA (-)0.6 V IC=(-)20mA, IB=(-)2mA (-)1.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(-)10A, IE=0 (-)300 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(-)1mA, RBE= (-)300 V Emitter-to-Base Breakdown Votage V(BR)EBO (-)5 V IC -- VCE 2SA1480 --18 --16 --140A --120A --14 --80A --10 --60A --8 --40A --6 --4 --20A --2 120A 100A 16 14 80A 12 10 60A 8 40A 6 4 20A 2 0 0 --1 IB=0 --2 --3 --4 --5 --6 --7 --8 --9 --10 Collector-to-Emitter Voltage, VCE - V ITR03783 0 2SA1480 IB=0 0 1 2 3 4 5 60A --8 --50A 8 50A --7 --40A Collector Current, IC - mA 9 Collector Current, IC - mA --60A --30A --4 --20A --3 --10A --2 --1 9 10 ITR03784 40A 6 30A 5 4 20A 3 2 10A 1 0 IB=0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 Collector-to-Emitter Voltage, VCE - V ITR03785 0 IB=0 0 10 20 30 40 50 60 70 80 Collector-to-Emitter Voltage, VCE - V IC -- VBE --120 90 100 ITR03786 IC -- VBE 120 2SA1480 VCE=--10V --100 2SC3790 VCE=10V --40 --20 --25C 80 25C --25C Collector Current, IC - mA --60 25C Ta=75C 100 --80 0 7 Ta=75C 0 8 2SC3790 --9 --5 7 IC -- VCE 10 --6 6 Collector-to-Emitter Voltage, VCE - V IC -- VCE --10 Collector Current, IC - mA 2SC3790 18 --100A --12 IC -- VCE 20 Collector Current, IC - mA --20 Collector Current, IC - mA IE=(-)10A, IC=0 60 40 20 0 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE - V --1.0 ITR03787 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE - V 1.0 ITR03788 No.2254-2/5 2SA1480/2SC3790 hFE -- IC 1000 7 2SC3790 VCE=10V 7 5 3 3 DC Current Gain, hFE DC Current Gain, hFE 5 hFE -- IC 1000 2SA1480 VCE=--10V Ta=75C 2 25C --25C 100 --25C 100 Ta=75C 25C 2 7 5 3 2 7 5 3 2 10 7 5 7 --1.0 2 5 7 --10 2 5 3 3 Collector Current, IC - mA 2SA1480 VCE=--30V 7 5 3 2 100 7 5 3 2 10 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC - mA 7 --100 2 1.0 10 2 3 5 7 100 2 ITR03790 2SC3790 VCE=30V 3 2 100 7 5 3 2 10 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC - mA 7 100 2 ITR03792 Cob -- VCB 2SC3790 f=1MHz 2 Output Capacitance, Cob - pF 3 7 fT -- IC 3 5 5 5 10 7 5 3 2 1.0 7 7 5 7 --1.0 2 3 5 5 7 2 3 5 7 --100 2 --10 Collector-to-Base Voltage, VCB -- V ITR03793 Cre -- VCB 2 10 7 5 3 2 1.0 7 5 7 --1.0 5 7 1.0 2 3 2 3 5 7 --10 2 3 5 7 --100 2 Collector-to-Base Voltage, VCB -- V ITR03795 5 7 10 2 3 5 7 100 2 ITR03794 Collector-to-Base Voltage, VCB -- V Cre -- VCB 3 2SA1480 f=1MHz Reverse Transfer Capacitance, Cre - pF 3 Reverse Transfer Capacitance, Cre - pF 3 7 2 7 5 2 ITR03791 10 5 7 1.0 1000 2SA1480 f=1MHz 2 5 Collector Current, IC - mA Cob -- VCB 3 Output Capacitance, Cob - pF 5 2 ITR03789 fT -- IC 1000 Gain-Bandwidth Product, fT - MHz 7 --100 Gain-Bandwidth Product, fT - MHz 10 2SC3790 f=1MHz 2 10 7 5 3 2 1.0 7 5 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR03796 Collector-to-Base Voltage, VCB -- V No.2254-3/5 2SA1480/2SC3790 VCE(sat) -- IC 2SA1480 IC / IB=10 7 5 2 --1.0 7 5 3 2 --0.1 5 3 2 1.0 7 5 3 2 0.1 7 5 7 5 5 7 --1.0 5 7 --10 3 2 3 5 Collector Current, IC - mA 2 2 3 5 7 2 10 3 5 VBE(sat) -- IC 2SC3790 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE (sat) - V 7 3 2 7 100 2 ITR03798 Collector Current, IC - mA 10 5 5 3 2 1.0 7 5 3 5 7 5 7 --10 3 2 3 Collector Current, IC - mA 2 --1.0 5 7 ASO 2 100 Collector Current, IC - mA 5 3 Collector-to-Emitter Voltage, VCE - V ITR03801 o (T pera a= tio 25 n C ) 2 10 25 C ) n 7 c= io 5 7 100 2 ITR03800 at 3 (T DC 3 7 3 2 IC=100mA 5 3 10 5 2SC3790 7 5 7 3 ASO 100 5 5 2 er 7 7 10 op --10 5 C 2 3 Collector Current, IC - mA s 0 50 s 1m0ms 1 o (T pera c= tio 25 n DC C op ) (T era a= ti 25 on C ) 3 2 D DC 7 1.0 ICP=200mA 2 s 0 50 s 1m 0ms 1 IC=-100mA 7 5 3 2SA1480 5 5 3 2 --100 7 ITR03799 ICP=-200mA --100 2 7 1.0 ITR03797 --1.0 Collector Current, IC - mA 3 5 2 --100 2SA1480 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) - V 7 VBE(sat) -- IC --10 2 2SC3790 IC / IB=10 7 3 3 VCE(sat) -- IC 10 Collector-to-Emitter Saturation Voltage, VCE (sat) - V Collector-to-Emitter Saturation Voltage, VCE (sat) - V --10 2 5 7 10 2 3 5 7 100 2 3 5 Collector-to-Emitter Voltage, VCE - V ITR03802 PC -- Ta 8 2SA1480 / 2SC3790 Collector Dissipation, PC - W 7 6 5 4 3 2 No hea t sink 1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR03803 No.2254-4/5 2SA1480/2SC3790 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.2254-5/5