SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 2 - October 1997 ✪
FEATURES:
*Low VF
* High Current Capability
APPLICATIONS:
* DC - DC converters
* Mobile telecomms
*PCMCIA
PARTMARK DETAIL: ZS7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR40 V
Forward Current (Continuous) IF750 mA
Forward Voltage @ IF =750mA V
F490 mV
Average Peak Forward Current; D.C. = 50% IFAV 1500 mA
Non Repetitive Forward Current t≤100µs
t≤10ms
IFSM 12
5.2 A
A
Power Dissipation at Tamb
=25°C P
tot 500 mW
Storage Temperature Range Tstg -55 to + 150 ° C
Junction Temperature Tj125 ° C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage V(BR)R 40 60 V IR= 300µA
Forward Voltage VF225
235
290
340
390
440
530
280
310
350
420
490
540
650
mV
mV
mV
mV
mV
mV
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
Reverse Current IR50 100 µAVR=30V
Diode Capacitance CD25 pF f= 1MHz,VR= 25V
Reverse Recovery
Time trr 12 ns switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2%.
ZHCS750
1
3
C
1
A
3
2
SOT23
75 125
110100
030
1.20
030
VF- Forward Voltage (V)
IFv VF
0.01
10
IF- Forward Current (A)
IF(av)
Average Forward Current (A)
1.2
0
TC - Case Temperature (°C)
IF(av) v TC
Ta - Ambient Temp (° C)
125
75
VR- Reverse Voltage (V)
Tav VR
+50°C
+25°C
IR- Reverse Current (A)
+100°C
10n
VR- Reverse Voltage (V)
IRv VR
PF(av)
Average Power Dissipation (mW)
0.5
0
IF(av) Average Forward Current (A)
PF(av) v IF(av)
CD- Diode Capacitance (pF)
200
100
0
VR - Reverse Voltage (V)
CDv VR
Rth=100° C/W
-55°C
+125°C
10 20
+25°C
+125°C
0.1
1
00.40.80.2 0.6 10 20
-55°C
0.4
0.8
85 95 105 115
DC
D=0.5
D=0.2
D=0.1
D=0.05
DC
D=0.5
D=0.2
D=0.1
D=0.05
0.4
0.3
0.2
0.1
0.4 0.8
Rth=200°C/W
Rth=300° C/W
100
100n
1µ
10µ
100µ
1m
10m
100m
Typical Typical
Tj=125°C
Typical
TYPICAL CHARACTERISTICS
Typical
p
t
1
t1
D=t /tpIF(pk)
IF(av)=D x IF(pk)
F(av)
PF(av)
=I x VF
p
t
1
t1
D=t /tpIF(pk)
IF(av)=D x IF(pk)
ZHCS750
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
MAXIMUM TRANSIENT THERMAL RESISTANCE
TYPICAL CHARACTERISTICS
ZHCS750
