PROFET(R) BTS621L1 Smart Two Channel Highside Power Switch Features Product Summary Overvoltage protection Operating voltage * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) 43 5.0 ... 34 V V both channels: On-state resistance RON Load current (ISO) IL(ISO) Current limitation IL(SCr) each parallel 100 50 m 4.4 8.5 A 8 8 A TO-220AB/7 7 1 Application Standard * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits 7 1 7 1 Straight leads SMD General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Voltage source V 3 IN1 6 IN2 5 ST ESD Overvoltage protection Current limit 1 4 Logic Voltage Level shifter sensor Rectifier 1 Logic Limit for unclamped ind. loads 1 Charge pump 2 PROFET 1 Temperature sensor 1 Gate 2 protection Current limit 2 Limit for unclamped ind. loads 2 Open load Short to Vbb detection 2 GND 2 OUT1 Open load Short to Vbb detection 1 Charge pump 1 Level shifter Rectifier 2 1) + V bb Gate 1 protection Signal GND OUT2 7 Temperature sensor 2 R R O1 Load O2 GND Load GND With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group 1 of 15 2003-Oct-01 PROFET(R) BTS621L1 Pin Symbol Function 1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1 2 GND Logic ground 3 IN1 Input 1, activates channel 1 in case of logical high signal 4 Vbb 5 ST Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure 6 IN2 Input 2, activates channel 2 in case of logical high signal 7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2 Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 2.7 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. one channel, IL = 4.4 A, ZL = 32 mH, 0 : both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 : Symbol Vbb Vbb Values 43 34 Unit V V 60 V IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 75 A C EAS 395 790 mJ 1.0 2.0 kV -10 ... +16 2.0 5.0 V mA VLoad dump4) W see diagrams on page 9 Electrostatic discharge capability (ESD) (Human Body Model) IN: VESD all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) Current through input pin (DC) Current through status pin (DC) VIN IIN IST see internal circuit diagrams page 7 2) 3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Semiconductor Group 2 2003-Oct-01 PROFET(R) BTS621L1 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA SMD version, device on PCB5): min ---- Values typ max -1.7 -3.4 -75 35 Unit K/W Electrical Characteristics Parameter and Conditions, each channel Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 2 A Tj=25 C: RON each channel Tj=150 C: Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C 5) 3.5 6.8 80 160 4.4 8.5 -- -- --10 ton toff 80 80 200 200 400 400 s dV /dton 0.1 -- 1 V/s -dV/dtoff 0.1 -- 1 V/s IL(GNDhigh) -- 100 200 m A mA Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 3 2003-Oct-01 PROFET(R) BTS621L1 Parameter and Conditions, each channel Symbol Values min typ max Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump see diagram page 13 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Tj =-40...+150C: Ibb=40 mA Standby current (pin 4) VIN=0 Tj=-40...+25C: Tj= 150C: Vbb(on) Vbb(under) Vbb(u rst) 5.0 3.5 -- ---- Vbb(ucp) -- Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 2)8), VIN=5 V both channels on, Tj =-40...+150C Operating current (Pin 2)8) one channel on, Tj =-40...+150C: at Tj = 25 C, Vbb = 12 V unless otherwise specified Operating Parameters Operating voltage6) Undervoltage shutdown Undervoltage restart 6) 7) 8) Unit V V V 5.6 34 5.0 5.0 7.0 7.0 -- 0.2 -- V 34 33 -42 --0.5 47 43 ---- V V V V 14 17 -- 30 35 12 A IL(off) ---- IGND -- 4 6 mA IGND -- 2 3 mA Ibb(off) V A At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 4 2003-Oct-01 PROFET(R) BTS621L1 Parameter and Conditions, each channel Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Protection Functions9) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 10) Reverse battery voltage drop (Vout > Vbb) IL = -2.9 A, each channel Tj=150 C: Diagnostic Characteristics Open load detection current (on-condition) Values min typ max Unit IL(SCp) 11 9 5 18 14 8 25 22 14 A -- 8 -- A 41 150 --- 47 -10 -- 53 --32 V C K V -- 610 -- mV 20 20 --- 400 300 mA 2 3 4 V 4 10 30 k IL(SCr) VON(CL) Tjt Tjt -Vbb -VON(rev) Tj=-40 C: IL (OL) Tj=25 ..150C: Open load detection voltage11) (off-condition) VOUT(OL) Tj=-40..150C: Internal output pull down (pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150C RO 9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). 11) External pull up resistor required for open load detection in off state. Semiconductor Group 5 2003-Oct-01 PROFET(R) BTS621L1 Parameter and Conditions, each channel Symbol Values min typ max RI 2.5 3.5 6 k VIN(T+) VIN(T-) VIN(T) IIN(off) 1.7 1.5 -1 --0.5 -- 3.5 --50 V V V A On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150C IIN(on) 20 50 90 A Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 12), Tj =-40..+150C Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 12), Tj =-40..+150C Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+25C, IST = +1.6 mA: Tj = +150C, IST = +1.6 mA: td(ST OL4) 100 320 800 s td(ST OL5) -- 5 20 s td(ST) -- 200 600 s 5.4 --- 6.1 --- -0.4 0.6 V at Tj = 25 C, Vbb = 12 V unless otherwise specified Input and Status Feedback12) Input resistance Tj=-40..150C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150C 12) VST(high) VST(low) Unit If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 6 2003-Oct-01 PROFET(R) BTS621L1 Truth Table Normal operation Channel 1 Open load Channel 2 Channel 1 Short circuit to Vbb Channel 2 both channel Overtemperature Channel 1 Channel 2 Undervoltage/ Overvoltage L = "Low" Level H = "High" Level IN1 IN2 OUT1 OUT2 ST BTS621L1 L L H H L L H L H X L L H L H L H L H X L L H L H X L L H H Z Z H L H X H H H L H L H L H X Z Z H L H X L H X L X H L H X X X L L H L H X X X L H X L H X L L L L L X X L H H H L L L X X L L L H H H H H(L13)) H L H(L13)) H L 14) L H H(L15)) L14) H H(L15)) H L L H L H L H X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13) Terms V bb Input circuit (ESD protection) I IN1 4 3 Ibb Vbb IN1 OUT1 I IN2 6 IN2 I ST ST V V IN1 IN2 V 5 ST 1 PROFET OUT2 GND GND IN I L1 I GND I ESD-ZD I I L2 I I GND 7 V OUT1 2 R R V ON1 VON2 ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). VOUT2 13) With additional external pull up resistor An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 15) Low resistance to V may be detected in the ON-state by the no-load-detection bb 14) Semiconductor Group 7 2003-Oct-01 PROFET(R) BTS621L1 Open-load detection Status output ON-state diagnostic condition: VON < RON * IL(OL); IN high +5V R ST(ON) + V bb ST ESDZD GND VON ON ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Inductive and overvoltage output clamp OUT Open load detection Logic unit OFF-state diagnostic condition: VOUT > 3 V typ.; IN low + V bb V Z R EXT VON OFF OUT GND V OUT PROFET Open load detection Logic unit VON clamped to 47 V typ. R O Signal GND Overvolt. and reverse batt. protection + V bb IN1 V RI GND disconnect Z2 V IN2 4 bb Logic R ST 3 ST IN1 Ibb Vbb OUT1 V 6 Z1 GND 5 R GND PROFET ST GND OUT2 7 2 V Signal GND VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ, RGND= 150 Semiconductor Group IN2 1 V V IN1 IN2 ST V GND Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. 8 2003-Oct-01 PROFET(R) BTS621L1 GND disconnect with GND pull up Inductive Load switch-off energy dissipation E bb 4 3 V Vbb IN1 OUT1 IN1 6 V IN2 PROFET IN2 OUT2 ST 5 E AS 1 GND IN 7 V bb = V ST OUT PROFET 2 V ELoad Vbb ST GND GND ZL { L RL EL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load Energy stored in load inductance: 2 EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is 4 3 Vbb IN1 OUT1 high 6 5 EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, 1 PROFET IN2 OUT2 ST GND with an approximate solution for RL > 0 : IL* L IL*RL ) EAS= 2*R *(Vbb + |VOUT(CL)|)* ln (1+ |V L OUT(CL)| 7 2 V Maximum allowable load inductance for a single switch off (both channels parallel) L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 bb Normal load current can be handled by the PROFET itself. L [mH] 10000 Vbb disconnect with charged external inductive load 4 3 IN1 1000 Vbb OUT1 high 6 5 IN2 PROFET OUT2 ST 1 GND D 7 100 2 V bb 10 If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 1 3 5 7 9 11 IL [A] Semiconductor Group 9 2003-Oct-01 PROFET(R) BTS621L1 Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W] 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Typ. transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W] 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Semiconductor Group 10 2003-Oct-01 PROFET(R) BTS621L1 Timing diagrams Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN1 IN IN2 V bb t ST d(ST) *) V OUT1 V OUT V OUT2 IL I L(OL) ST open drain t t *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp: Figure 3a: Short circuit shut down by overtempertature, reset by cooling IN IN other channel: normal operation ST V IL OUT I L(SCp) I IL(SCr) L t ST t Heating up may require several milliseconds, depending on external conditions Semiconductor Group 11 2003-Oct-01 PROFET(R) BTS621L1 Figure 4a: Overtemperature: Reset if Tj <Tjt Figure 5b: Open load: detection in ON-state, turn on/off to open load IN1 IN IN2 channel 2: normal operation ST V OUT1 V OUT I L1 channel 1: open load T t J d(ST OL4) t t d(ST) d(ST OL5) t Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load Figure 5a: Open load: detection in ON-state, open load occurs in on-state IN1 IN1 channel 2: normal operation IN2 channel 2: normal operation V VOUT1 OUT1 channel 1: open load IL1 t ST t IN2 d(ST) normal load t d(ST OL1) t d(ST OL2) I L1 open load t d(ST OL1) ST t d(ST OL2) channel 1: open load t d(ST) t d(ST) t d(ST OL5) ST t t td(ST OL5) depends on external circuitry because of high impedance td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ Semiconductor Group 12 2003-Oct-01 PROFET(R) BTS621L1 Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN V IN bb Vbb V ON(CL) Vbb(over) V bb(o rst) Vbb(u cp) V V bb(under) bb(u rst) V OUT V OUT ST ST open drain t t Figure 6b: Undervoltage restart of charge pump off-state on-state V V bb(u rst) V V V bb(over) off-state VON(CL) V on bb(o rst) bb(u cp) bb(under) V bb charge pump starts at Vbb(ucp) =5.6 V typ. Semiconductor Group 13 2003-Oct-01 PROFET(R) BTS621L1 Package and Ordering Code All dimensions in mm Standard TO-220AB/7 BTS621L1 TO 220AB/7, Opt. E3230 BTS621L1 E3230 Semiconductor Group SMD TO 220AB/7, Opt. E3128 Ordering code Ordering code Q67060-S6304-A2 BTS621L1 E3128A T&R: Q67060-S6304-A4 Changed since 04.96 Date Change Dec td(ST OL4) max reduced from 1500 1996 to 800s, typical from 400 to 320s, min limit unchanged EAS maximum rating and diagram added Zth specification added max Output leakage current IL(off) reduced from 20 to 12 A increased ESD capability Typ. reverse battery voltage drop VON(rev) added Ordering code Q67060-S6304-A3 14 2003-Oct-01 PROFET(R) BTS621L1 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 15 2003-Oct-01