PROFET® BTS621L1
Semiconductor Group 1 of 15 2003-Oct-01
Smart Two Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application
• µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
IN1
ST
Signal GND
ESD
PROFET
OUT1
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection 1
Short to Vbb
Level shifter
Temperature
sensor 1
Rectifier 1
Limit for
unclamped
ind. loads 1
Gate 1
protection
Current
limit 1
3
5
2
4
1
Load GND
Load
VLogic
Overvoltage
protection
OUT2
Open load
detection 2
Short to Vbb
Level shifter
Temperature
sensor 2
Rectifier 2
Limit for
unclamped
ind. loads 2
Gate 2
protection
Current
limit 2
7
IN2
6
GND
RR
O1 O2
Charge
pump 1
Charge
pump 2
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection Vbb(AZ) 43 V
Operating voltage Vbb(on) 5.0 ... 34 V
channels: each both
parallel
On-state resistance RON 100 50 mΩ
Load current (ISO) IL(ISO) 4.4 8.5 A
Current limitation IL(SCr) 8 8 A
TO-220AB/7
1
7
Standard
1
7
Straight leads 1
7
SMD
PROFET® BTS621L1
Semiconductor Group 2 2003-Oct-01
Pin Symbol Function
1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1
2 GND Logic ground
3 IN1 Input 1, activates channel 1 in case of logical high signal
4 Vbb Positive power supply voltage,
the tab is shorted to this pin
5 ST Diagnostic feedback: open drain, low on failure
6 IN2 Input 2, activates channel 2 in case of logical high signal
7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Vbb 34 V
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high
VLoad dump4) 60 V
Load current (Short circuit current, see page 5) IL self-limited A
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), TC ≤ 25 °C Ptot 75 W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, T
j,start = 150°C, T
C = 150°C const.
one channel, IL = 4.4 A, ZL = 32 mH, 0 Ω:
EAS 395 mJ
both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 Ω: 790
see diagrams on page 9
Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
VESD 1.0
2.0
kV
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
IIN
IST
±2.0
±5.0
mA
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
PROFET® BTS621L1
Semiconductor Group 3 2003-Oct-01
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case, both channels:
each channel:
junction - ambient (free air):
RthJC
RthJA
--
--
--
--
--
--
1.7
3.4
75
K/W
SMD version, device on PCB5): 35
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
IL = 2 A T
j=25 °C:
each channel T
j=150 °C:
RON
--
80
160
100
200
mΩ
Nominal load current, ISO Norm (pin 4 to 1 or 7)
VON = 0.5 V, T
C = 85 °C each channel:
both channels parallel:
IL(ISO)
3.5
6.8
4.4
8.5 --
--
A
Output current (pin 1 or 7) while GND disconnected
or GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 8
IL(GNDhigh) -- -- 10 mA
Turn-on time IN to 90% VOUT:
Turn-off time IN to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
ton
toff
80
80
200
200
400
400
µs
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
dV /dton 0.1 -- 1 V/µs
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
-dV/dtoff 0.1 -- 1 V/µs
PROFET® BTS621L1
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Semiconductor Group 4 2003-Oct-01
Operating Parameters
Operating voltage6) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart Tj =-40...+25°C:
Tj =+150°C:
Vbb(u rst) -- -- 5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 13 Tj =-40...+150°C:
Vbb(ucp) -- 5.6 7.0 V
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under) -- 0.2 -- V
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.5 -- V
Overvoltage protection7) Tj =-40...+150°C:
Ibb=40 mA
Vbb(AZ) 42 47 -- V
Standby current (pin 4)
VIN=0 T
j=-40...+25°C:
T
j= 150°C:
Ibb(off)
--
--
14
17
30
35
µA
Leakage output current (included in Ibb(off))
VIN=0
IL(off) -- -- 12 µA
Operating current (Pin 2)8), VIN=5 V
both channels on, Tj =-40...+150°C
IGND -- 4 6 mA
Operating current (Pin 2)8)
one channel on, Tj =-40...+150°C:
IGND -- 2 3 mA
6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
7) See also VON(CL) in table of protection functions and circuit diagram page 8.
8) Add IST, if IST > 0, add IIN, if VIN>5.5 V
PROFET® BTS621L1
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Semiconductor Group 5 2003-Oct-01
Protection Functions9)
Initial peak short circuit current limit (pin 4 to 1
or 7)
IL(SCp)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
11
9
5
18
14
8
25
22
14
A
Repetitive short circuit shutdown current limit IL(SCr)
Tj = Tjt (see timing diagrams, page 11) -- 8 -- A
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C:
VON(CL)
41
47 53 V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
∆
Tjt -- 10 -- K
Reverse battery (pin 4 to 2) 10) -Vbb -- -- 32 V
Reverse battery voltage drop (Vout > Vbb)
IL = -2.9 A, each channel T
j=150 °C:
-VON(rev)
--
610 -- mV
Diagnostic Characteristics
Open load detection current Tj=-40 °C:
(on-condition) Tj=25 ..150°C:
IL (OL) 20
20
--
--
400
300
mA
Open load detection voltage11) (off-condition)
Tj=-40..150°C:
VOUT(OL) 2 3 4V
Internal output pull down
(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C
RO
4
10 30 kΩ
9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
11) External pull up resistor required for open load detection in off state.
PROFET® BTS621L1
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Semiconductor Group 6 2003-Oct-01
Input and Status Feedback12)
Input resistance
Tj=-40..150°C, see circuit page 7
RI 2.5 3.5 6 kΩ
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.7 -- 3.5 V
Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.5 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current (pin 3 or 6), VIN = 0.4 V,
Tj =-40..+150°C
IIN(off) 1 -- 50 µA
On state input current (pin 3 or 6), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on) 20 50 90 µA
Delay time for status with open load after switch
off (other channel in off state)
(see timing diagrams, page 12), Tj =-40..+150°C
td(ST OL4) 100 320 800 µs
Delay time for status with open load after switch
off (other channel in on state)
(see timing diagrams, page 12), Tj =-40..+150°C
td(ST OL5) -- 5 20 µs
Status invalid after positive input slope
(open load) Tj=-40 ... +150°C:
td(ST)
-- 200 600 µs
Status output (open drain)
Zener limit voltage T
j =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+25°C, IST = +1.6 mA:
T
j = +150°C, IST = +1.6 mA:
VST(high)
VST(low)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
12) If a ground resistor RGND is used, add the voltage drop across this resistor.
PROFET® BTS621L1
Semiconductor Group 7 2003-Oct-01
Truth Table
IN1 IN2 OUT1 OUT2 ST
BTS621L1
Normal operation L
L
H
H
L
H
L
H
L
L
H
H
L
H
L
H
H
H
H
H
Open load Channel 1 L
L
H
L
H
X
Z
Z
H
L
H
X
H(L13))
H
L
Channel 2 L
H
X
L
L
H
L
H
X
Z
Z
H
H(L13))
H
L
Short circuit to Vbb Channel 1 L
L
H
L
H
X
H
H
H
L
H
X
L14)
H
H(L15))
Channel 2 L
H
X
L
L
H
L
H
X
H
H
H
L14)
H
H(L15))
Overtemperature both channel L
X
H
L
H
X
L
L
L
L
L
L
H
L
L
Channel 1 L
H
X
X
L
L
X
X
H
L
Channel 2 X
X
L
H
X
X
L
L
H
L
Undervoltage/ Overvoltage X X L L H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
13) With additional external pull up resistor
14) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
15) Low resistance to Vbb may be detected in the ON-state by the no-load-detection
Terms
PROFET
V
IN2
ST
OUT2
GND
bb
VST
VIN1
IST
IIN1
Vbb
Ibb
IL2
VOUT2
IGND
V
ON2
1
2
4
3
5
IN1
VIN2
IIN2
VOUT1
V
ON1
IL1
OUT1
6
7
RGND
Input circuit (ESD protection)
IN
GND
I
R
ESD-ZD
I
I
I
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
PROFET® BTS621L1
Semiconductor Group 8 2003-Oct-01
Status output
ST
GND
ESD-
ZD
+5V
RST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Inductive and overvoltage output clamp
+ Vbb
OUT
GND PROFET
VZ
VON
VON clamped to 47 V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN2
ST
ST
R
GND
GND
R
Signal GND
Logic
VZ2
IN1
RI
VZ1
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 kΩ typ,
RGND= 150 Ω
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
Open load
detection
Logic
unit
+ Vbb
OUT
ON
VON
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Open load
detection
Logic
unit
VOUT
Signal GND
REXT
RO
OFF
GND disconnect
PROFET
V
IN2
ST
OUT2
GND
bb
Vbb
Ibb
1
2
4
3
5
IN1
OUT1
6
7
VIN1V
IN2 V
ST V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
PROFET® BTS621L1
Semiconductor Group 9 2003-Oct-01
GND disconnect with GND pull up
PROFET
V
IN2
ST
OUT2
GND
bb
Vbb
1
2
4
3
5
IN1
OUT1
6
7
VIN1
VIN2
VST VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
PROFET
V
IN2
ST
OUT2
GND
bb
Vbb
1
2
4
3
5
IN1
OUT1
6
7
high
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive load
PROFET
V
IN2
ST
OUT2
GND
bb
1
2
4
3
5
IN1
OUT1
6
7
Vbb
high
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
L
R
L
{Z
L
Energy stored in load inductance:
EL = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= IL· L
2·RL·(Vbb + |VOUT(CL)|)· ln (1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
L [mH]
1
10
100
1000
10000
357911
IL [A]
PROFET® BTS621L1
Semiconductor Group 10 2003-Oct-01
Typ. transient thermal impedance chip case
ZthJC = f(tp), one Channel active
ZthJC [K/W]
0.01
0.1
1
10
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
tp [s]
Typ. transient thermal impedance chip case
ZthJC = f(tp), both Channel active
ZthJC [K/W]
0.01
0.1
1
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
tp [s]
PROFET® BTS621L1
Semiconductor Group 11 2003-Oct-01
Timing diagrams Both channels are symmetric and consequently the diagrams
are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on:
IN2
V
OUT1
t
V
bb
ST open drain
IN1
V
OUT2
Figure 2a: Switching a lamp:
IN
ST
OUT
L
t
V
I
Figure 2b: Switching an inductive load
IN
ST
L
t
V
I
*)
OUT
td(ST)
IL(OL)
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
IN
ST
L
t
I
other channel: normal operation
L(SCr)
I
IL(SCp)
Heating up may require several milliseconds, depending on
external conditions
PROFET® BTS621L1
Semiconductor Group 12 2003-Oct-01
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
OUT
J
t
V
T
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
IN2 channel 2: normal operation
OUT1
t
V
ST
IN1
IL1
td(ST OL1) td(ST OL2) td(ST OL1) td(ST OL2)
open
load
open
load
normal
load
channel 1:
td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ
Figure 5b: Open load: detection in ON-state, turn
on/off to open load
OUT1
t
V
ST
IN1
IL1
t
d(ST) td(ST OL4)
t
d(ST) td(ST OL5)
IN2 channel 2: normal opera tion
channel 1: open load
Figure 5c: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load
t
V
ST
IN1
IL1
td(ST) d(ST OL5)
channel 1: open load
td(ST) t
OUT1
IN2 channel 2: normal operation
td(ST OL5) depends on external circuitry because of high
impedance
PROFET® BTS621L1
Semiconductor Group 13 2003-Oct-01
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST open drain
VV
bb(under) bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
bb(under)
V
Vbb(u rst)
Vbb(over)
Vbb(o rst)
Vbb(u cp)
off-state
on-state
V
ON(CL)
Vbb
Von
off-state
charge pump starts at Vbb(ucp) =5.6 V typ.
Figure 7a: Overvoltage:
IN
V
OUT
t
V
bb
ST
ON(CL)
VVbb(over) Vbb(o rst)
PROFET® BTS621L1
Semiconductor Group 14 2003-Oct-01
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/7 Ordering code
BTS621L1 Q67060-S6304-A2
TO 220AB/7, Opt. E3230 Ordering code
BTS621L1 E3230 Q67060-S6304-A3
SMD TO 220AB/7, Opt. E3128 Ordering code
BTS621L1 E3128A T&R: Q67060-S6304-A4
Changed since 04.96
Date Change
Dec
1996
td(ST OL4) max reduced from 1500
to 800µs, typical from 400 to
320µs, min limit unchanged
EAS maximum rating and diagram
added
Zth specification added
max Output leakage current IL(off)
reduced from 20 to 12 µA
increased ESD capability
Typ. reverse battery voltage drop -
VON(rev) added
PROFET® BTS621L1
Semiconductor Group 15 2003-Oct-01
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
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approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
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and/or protect human life. If they fail, it is reasonable to
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endangered.
