NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level-Shift, P-Channel SC-88 The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF. http://onsemi.com V(BR)DSS 8.0 V ID MAX 1.3 A 170 mW @ -2.5 V 260 mW @ -1.8 V SIMPLIFIED SCHEMATIC Features * * * * * * * RDS(on) TYP 130 mW @ -4.5 V 4 Extremely Low RDS(on) P-Channel Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ON/OFF Range 1.5 to 8.0 V ESD Rating of 3000 V Pb-Free Package is Available 2,3 Q2 6 Q1 5 1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Input Voltage (VDSS, P-Ch) Symbol Value Unit VIN 8.0 V VON/OFF 8.0 V Continuous Load Current Steady TA = 25C (Note 1) State TA = 85C IL 1.3 A Power Dissipation (Note 1) Steady TA = 25C State TA = 85C PD tp = 10 ms ILM 3.9 A TJ, TSTG -55 to 150 C IS -0.4 A ESD 3.0 kV TL 260 C Characteristic Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 320 C/W Junction-to-Foot - Steady State (Note 1) RqJF 220 ON/OFF Voltage (VGS, N-Ch) Pulsed Load Current Operating Junction and Storage Temperature Source Current (Body Diode) ESD Rating, MIL-STD-883D HBM (100 pF, 1.5 kW) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 0.9 W 0.40 March, 2007 - Rev. 4 TB M G TB = Device Code G M = Date Code 1 G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT D1/G2 6 G1 5 1 S1 S2 4 2 3 D2 D2 ORDERING INFORMATION Device NTJD1155LT1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). (c) Semiconductor Components Industries, LLC, 2007 1 0.20 THERMAL CHARACTERISTICS MARKING DIAGRAM SC-88 (SOT-363) CASE 419B STYLE 30 1 NTJD1155LT1G Package Shipping SC-88 3000/Tape & Reel SC-88 (Pb-Free) 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTJD1155L/D NTJD1155L ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Test Condition Min Q2 Drain-to-Source Breakdown Voltage VIN VGS2 = 0 V, ID2 = 250 mA -8.0 Forward Leakage Current IFL Characteristic Typ Max Unit OFF CHARACTERISTICS VGS1 = 0 V, VDS2 = -8.0 V V TJ = 25C 1.0 TJ = 125C 10 Q1 Gate-to-Source Leakage Current IGSS VDS1 = 0 V, VGS1 = 8.0 V Q1 Diode Forward On-Voltage VSD IS = -0.4 A, VGS1 = 0 V mA 100 nA -1.1 V 1.5 8.0 V -0.8 ON CHARACTERISTICS ON/OFF Voltage VON/OFF Q1 Gate Threshold Voltage VGS1(th) VGS1 = VDS1, ID = 250 mA 0.4 1.0 V VIN VGS1 = VDS1, ID = 250 mA 1.8 8.0 V mW Input Voltage Q2 Drain-to-Source On Resistance RDS(on) Load Current VON/OFF = 1.5 V IL 175 VIN = 2.5 V IL = 1.0 A 170 220 VIN = 1.8 V IL = 0.7 A 260 320 1.0 VDROP 0.3 V, VIN = 2.5 V, VON/OFF = 1.5 V 1.0 2,3 Q2 R1 A VOUT C1 6 ON/OFF 130 VDROP 0.2 V, VIN = 5.0 V, VON/OFF = 1.5 V 4 VIN VIN = 4.5 V IL = 1.2 A 6 5 CO LOAD Q1 1 CI R2 R2 GND Figure 1. Load Switch Application Components Description Values R1 Pullup Resistor Typical 10 kW to 1.0 MW* R2 Optional Slew-Rate Control Typical 0 to 100 kW* Output Capacitance Usually < 1.0 mF Optional In-Rush Current Control Typical 1000 pF CO, CI C1 *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. http://onsemi.com 2 NTJD1155L 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 0.50 0.45 0.40 0.35 TJ = 125C VDROP (V) VDROP (V) TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) TJ = 25C TJ = 125C 0.30 0.25 0.20 TJ = 25C 0.15 0.10 0.05 0.5 1.0 1.5 2.5 2.0 0 0 3.0 0.5 1.0 1.5 IL (AMPS) 0.8 IL = 1 A VON/OFF = 1.5 to 8 V 0.6 0.5 0.4 0.3 0.2 TJ = 125C 0.1 TJ = 25C 0.0 1.0 2.0 3.0 5.0 4.0 VIN (VOLTS) 6.0 7.0 8.0 IL = 1 A VON/OFF = 1.5 to 8 V 0.26 0.21 0.16 0.11 Vin = 5 V 0.06 0.01 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 44 IL = 1 A VON/OFF = 1.5 to 8 V IL = 1 A VON/OFF = 1.5 V Ci = 10 mF Co = 1 mF 40 36 32 1.3 Vin = 5 V 1.1 Vin = 1.8 V tr 28 24 td(off) 20 16 tf 12 0.9 0.7 -50 Vin = 1.8 V Figure 5. On-Resistance Variation with Temperature TIME (ms) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 3.0 0.31 Figure 4. On-Resistance vs. Input Voltage 1.7 2.5 Figure 3. Vdrop vs. IL @ Vin = 4.5 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Vdrop vs. IL @ Vin = 2.5 V 0.7 2.0 IL (AMPS) 8 -25 0 25 50 75 100 125 150 4 0 td(on) 0 TJ, JUNCTION TEMPERATURE (C) 1 2 3 4 5 6 R2 (kW) Figure 6. Normalized On-Resistance Variation with Temperature Figure 7. Switching Variation R2 @ Vin = 4.5 V, R1 = 20 kW http://onsemi.com 3 7 8 NTJD1155L TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 40 22 20 18 td(off) 36 tf 28 14 32 12 10 IL = 1 A Von/off = 3 V Ci = 10 mF Co = 1 mF 8 6 4 2 0 20 16 12 tr 1 2 3 4 5 6 td(on) tf 8 4 td(on) 0 tr 24 TIME (ms) TIME (ms) 16 IL = 1 A VON/OFF = 1.5 V Ci = 10 mF Co = 1 mF 7 0 8 td(off) 0 1 2 3 4 5 6 8 7 R2 (kW) R2 (kW) Figure 8. Switching Variation R2 @ Vin = 4.5 V, R1 = 20 kW Figure 9. Switching Variation R2 @ Vin = 2.5 V, R1 = 20 kW 12 tf 10 TIME (ms) 8 td(off) IL = 1 A Von/off = 3 V Ci = 10 mF Co = 1 mF 6 4 tr 2 0 td(on) 0 1 2 3 4 5 7 6 8 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE R2 (kW) Figure 10. Switching Variation R2 @ Vin = 2.5 V, R1 = 20 kW 10 Normalized to RqJA at Steady State ( 1 inch pad) 1 D = 0.5 0.2 P(pk) 0.1 0.1 0.01 SINGLE PULSE 0.01 0.001 0.02 0.05 t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.1 1 10 SQUARE WAVE PULSE DURATION TIME t, (s) Figure 11. FET Thermal Response http://onsemi.com 4 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 100 1000 NTJD1155L PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE W D e 6 5 4 1 2 3 HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. DIM A A1 A3 b C D E e L HE -E- b 6 PL 0.2 (0.008) M E M INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 A3 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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