© Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 4
1Publication Order Number:
NTJD1155L/D
NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with
LevelShift, PChannel SC88
The NTJD1155L integrates a P and NChannel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The PChannel device is specifically
designed as a load switch using ON Semiconductor stateoftheart
trench technology. The NChannel, with an external resistor (R1),
functions as a levelshift to drive the PChannel. The NChannel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
VIN and VON/OFF.
Features
Extremely Low RDS(on) PChannel Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 3000 V
PbFree Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Input Voltage (VDSS, PCh) VIN 8.0 V
ON/OFF Voltage (VGS, NCh) VON/OFF 8.0 V
Continuous Load Current
(Note 1)
Steady
State
TA = 25°CIL±1.3 A
TA = 85°C±0.9
Power Dissipation
(Note 1)
Steady
State
TA = 25°CPD0.40 W
TA = 85°C 0.20
Pulsed Load Current tp = 10 msILM ±3.9 A
Operating Junction and Storage Temperature TJ,
TSTG
55 to
150
°C
Source Current (Body Diode) IS0.4 A
ESD Rating, MILSTD883D HBM
(100 pF, 1.5 kW)
ESD 3.0 kV
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1) RqJA 320 °C/W
JunctiontoFoot – Steady State (Note 1) RqJF 220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
2,3
5
6
SIMPLIFIED SCHEMATIC
SC88
(SOT363)
CASE 419B
STYLE 30
MARKING
DIAGRAM
TB = Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
3
D2
1
S1
S2
4
2
D2
G1
5
D1/G2
6
4
Q2
Q1
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For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8.0 V 170 mW @ 2.5 V
130 mW @ 4.5 V
RDS(on) TYP
±1.3 A
ID MAXV(BR)DSS
260 mW @ 1.8 V
Device Package Shipping
ORDERING INFORMATION
NTJD1155LT1 SC88 3000/Tape & Reel
NTJD1155LT1G SC88
(PbFree) 3000/Tape & Reel
1
TB M G
G
1
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NTJD1155L
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Q2 DraintoSource Breakdown Voltage VIN VGS2 = 0 V, ID2 = 250 mA8.0 V
Forward Leakage Current IFL VGS1 = 0 V,
VDS2 = 8.0 V
TJ = 25°C 1.0 mA
TJ = 125°C 10
Q1 GatetoSource Leakage Current IGSS VDS1 = 0 V, VGS1 = ±8.0 V ±100 nA
Q1 Diode Forward OnVoltage VSD IS = 0.4 A, VGS1 = 0 V 0.8 1.1 V
ON CHARACTERISTICS
ON/OFF Voltage VON/OFF 1.5 8.0 V
Q1 Gate Threshold Voltage VGS1(th) VGS1 = VDS1, ID = 250 mA0.4 1.0 V
Input Voltage VIN VGS1 = VDS1, ID = 250 mA1.8 8.0 V
Q2 DraintoSource On Resistance RDS(on) VON/OFF = 1.5 V VIN = 4.5 V
IL = 1.2 A
130 175 mW
VIN = 2.5 V
IL = 1.0 A
170 220
VIN = 1.8 V
IL = 0.7 A
260 320
Load Current ILVDROP 0.2 V, VIN = 5.0 V,
VON/OFF = 1.5 V
1.0 A
VDROP 0.3 V, VIN = 2.5 V,
VON/OFF = 1.5 V
1.0
1
2,3
5
6
Figure 1. Load Switch Application
4
Q2
Q1
6
C1
CO
CI
R1
R2
R2
ON/OFF
VIN VOUT
LOAD
GND
Components Description Values
R1 Pullup Resistor Typical 10 kW to 1.0 MW*
R2 Optional SlewRate Control Typical 0 to 100 kW*
CO, CIOutput Capacitance Usually < 1.0 mF
C1 Optional InRush Current Control Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turnon.
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3
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
0.70
0.25
1.50.5
IL (AMPS)
VDROP (V)
0.15
0.05
0
Figure 2. Vdrop vs. IL @ Vin = 2.5 V Figure 3. Vdrop vs. IL @ Vin = 4.5 V
0.2
0.0
Figure 4. OnResistance vs. Input Voltage
VIN (VOLTS)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
50 025 25
1.3
1.1
0.7
50 125100
Figure 6. Normalized OnResistance Variation
with Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
0.8
TJ = 125°C
75 150
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
1.0
1.7
1.0 8.0
Figure 7. Switching Variation
R2 @ Vin = 4.5 V, R1 = 20 kW
3.02.5
0.4
0.10
0.20
0.30
IL = 1 A
VON/OFF = 1.5 to 8 V
TJ = 25°C
0.6
1.5
08
R2 (kW)
44
0
TIME (ms)
28
16
241
td(off)
3.0 5.0 7.0
0.06
0.01
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
0.31
0.16
Vin = 5 V
0.21
Vin = 1.8 V
0.9
56
0.45
0.40
0.35
0.50
0.55
0.60
0.65
2.0
TJ = 125°C
0
0.25
1.50.5
IL (AMPS)
VDROP (V)
0.15
0.05
0
TJ = 25°C
1.0 3.02.5
0.10
0.20
0.30
0.45
0.40
0.35
0.50
2.0
TJ = 125°C
2.0 4.0 6.0 50 025 25 50 12510075 150
0.11
0.26
Vin = 5 V
Vin = 1.8 V
IL = 1 A
VON/OFF = 1.5 V
Ci = 10 mF
Co = 1 mF
37
td(on)
tr
tf
40
24
12
36
20
8
32
4
IL = 1 A
VON/OFF = 1.5 to 8 V
IL = 1 A
VON/OFF = 1.5 to 8 V
0.3
0.1
0.5
0.7
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4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
Figure 8. Switching Variation
R2 @ Vin = 4.5 V, R1 = 20 kW
08
R2 (kW)
22
0
TIME (ms)
14
8
241
td(off)
56
IL = 1 A
Von/off = 3 V
Ci = 10 mF
Co = 1 mF
37
td(on)
tr
tf
20
12
6
18
10
4
16
2
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
SQUARE WAVE PULSE DURATION TIME t, (s)
0.1
10
0.01
SINGLE PULSE
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100 10001010.10.010.001
1
0.2
D = 0.5
0.01
0.02
0.1
0.05
Normalized to RqJA at Steady State ( 1 inch pad)
Figure 9. Switching Variation
R2 @ Vin = 2.5 V, R1 = 20 kW
08
R2 (kW)
0
TIME (ms)
28
16
241
td(off)
56
IL = 1 A
VON/OFF = 1.5 V
Ci = 10 mF
Co = 1 mF
37
td(on)
tr
tf
40
24
12
36
20
8
32
4
Figure 10. Switching Variation
R2 @ Vin = 2.5 V, R1 = 20 kW
08
R2 (kW)
0
TIME (ms)
8
241
td(off)
56
IL = 1 A
Von/off = 3 V
Ci = 10 mF
Co = 1 mF
37
td(on)
tr
tf
12
6
10
4
2
Figure 11. FET Thermal Response
NTJD1155L
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5
PACKAGE DIMENSIONS
SC88 (SOT363)
CASE 419B02
ISSUE W
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B01 OBSOLETE, NEW STANDARD 419B02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
E
b6 PL
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone: 81357733850
NTJD1155L/D
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