1214GN-280 280 Watts - 60 Volts, 300 s, 10% L-Band Radar 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-280 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 17dB gain, 280 Watts of pulsed RF output power at 300s pulse width, 10% duty factor across the 1200 to 1400 MHz band. Market Application - 1214GN-280 is designed for L-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 600 W 150 V -8 to +0 V Maximum Temperatures -55 to +125 C Storage Temperature (TSTG) Operating Junction Temperature +250 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d Dr VSWR-T jc Characteristics Output Power Power Gain Drain Efficiency Droop Load Mismatch Tolerance Thermal Resistance Test Conditions Pout=280W, Freq=1200,1300,1400 MHz Pout=280W, Freq=1200,1300,1400 MHz Pout=280W, Freq=1200,1300,1400 MHz Pout=280W, Freq=1200,1300,1400 MHz Pout=280W, Freq= 1300MHz Min 280 17 47 Typ 300 17.3 55 Max 1.0 3:1 Pulse Width=300uS, Duty=10% 0.3 Units W dB % dB C/W Bias Condition: Vdd=+60V, Idq=50mA average current (Vgs= -2.0 ~ -4.5V typical) FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage VgS = -8V, VD = 60V VgS = -8V, VD = 0V Vgs =-8V, ID = 10mA 10 8 250 Export Classification: EAR-99 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information mA mA V 1214GN-280 280 Watts - 60 Volts, 300 s, 10% L-Band Radar 1200 - 1400 MHz TYPICAL BROAD BAND PERFORMACE DATA Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) 1200 MHz 5.6 312 1.0 -9 53 17.45 Droop (dB) 0.5 1300 MHz 5.6 316 .96 -15 57 17.5 0.3 1400 MHz 5.6 302 .9 -17 58 17.2 0.2 1214GN280 Vdd = 60V, Idq = 50mA, 300uS @ 10% 350 26 300 24 Pout (W) 250 22 200 150 20 100 18 50 16 0 2 3 4 Pin (W) 5 1.2GHz 6 1.3GHz 1.4GHz For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 1214GN-280 280 Watts - 60 Volts, 300 s, 10% L-Band Radar 1200 - 1400MHz TRANSISTOR IMPEDANCE INFORMATION Note: Zsource is looking into the input circuit; Z Load is looking into the output circuit. Impedance Data Freq (GHz) Zs Zl 1.2 2.29 - j2.52 3.18 - j2.32 1.3 2.32 - j1.47 3.61 - j1.43 1.4 2.44 - j.40 4.29 - j.56 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 1214GN-280 280 Watts - 60 Volts, 300 s, 10% L-Band Radar 1200 - 1400 MHz TEST CIRCUIT DIAGRAM Board Material: Roger Duriod 6006 @ 25 Mil Thickness, Er=6.15 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 1214GN-280 280 Watts - 60 Volts, 300 s, 10% L-Band Radar 1200 - 1400 MHz 55-KR PACKAGE DIMENSION Dimension A B C D E F G H I J K L M N Min (mil) 370 498 700 830 1030 101 151 385 130 003 135 105 085 065 Min (mm) 9.40 12.65 17.78 21.08 26.16 2.56 3.84 9.78 3.30 .076 3.43 2.67 2.16 1.65 Max (mil) 372 500 702 832 1032 102 152 387 132 004 137 107 86 66 Max (mm) 9.44 12.7 17.83 21.13 26.21 2.59 3.86 9.83 3.35 0.10 3.48 2.72 2.18 1.68 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 1214GN-280 280 Watts - 60 Volts, 300 s, 10% L-Band Radar 1200 - 1400 MHz The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other missioncritical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp. Revision History Revision Level / Date 0.1 / 18 January 2013 Para. Affected - Description Initial Preliminary Release For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information