For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
GENERAL DESCRIPTION
The 1214GN-280 is an internally matched, COMMON SOURCE, class
AB, GaN on SiC HEMT transistor capable of providing over 17dB gain,
280 Watts of pulsed RF output power at 300μs pulse width, 10% duty
factor across the 1200 to 1400 MHz band.
Market Application – 1214GN-280 is designed for L-Band Pulsed Radar
CASE OUTLINE
55-KR
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 600 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pout=280W, Freq=1200,1300,1400 MHz 280 300 W
Gp Power Gain Pout=280W, Freq=1200,1300,1400 MHz 17 17.3 dB
d Drain Efficiency Pout=280W, Freq=1200,1300,1400 MHz 47 55 %
Dr Droop Pout=280W, Freq=1200,1300,1400 MHz 1.0 dB
VSWR-T Load Mismatch
Tolerance
Pout=280W, Freq= 1300MHz 3:1
Өjc Thermal Resistance Pulse Width=300uS, Duty=10% 0.3 °C/W
Bias Condition: Vdd=+60V, Idq=50mA average cur rent (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off) Drain leakage current VgS = -8V, VD = 60V 10 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 8 mA
BVDSS Drain-source breakdown
voltage
Vgs =-8V, ID = 10mA 250 V
Export Classification: EAR-99
1214GN-280
280 Watts - 60 Volts, 300 s, 10%
L-Band Radar 1200 - 1400 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
TYPICAL BROAD BAND PERFORMACE DATA
Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) Droop
(dB)
1200 MHz 5.6 312 1.0 -9 53 17.45 0.5
1300 MHz 5.6 316 .96 -15 57 17.5 0.3
1400 MHz 5.6 302 .9 -17 58 17.2 0.2
1214GN-280
280 Watts - 60 Volts, 300 s, 10%
L-Band Radar 1200 - 1400 MHz
1214GN280
Vdd=60V,Idq=50mA,300uS@10%
0
50
100
150
200
250
300
350
23456
Pin(W)
Pout(W)
16
18
20
22
24
26
1.2GHz 1.3GHz 1.4GHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
TRANSISTOR IMPEDANCE INFORMATION
Note: Zsource is looking into the input circuit;
Load
Z is looking into the output circuit.
Impedance Data
Freq (GHz) Zs Zl
1.2 2.29 – j2.52 3.18 – j2.32
1.3 2.32 – j1.47 3.61 – j1.43
1.4 2.44 – j.40 4.29 – j.56
1214GN-280
280 Watts - 60 Volts, 300 s, 10%
L-Band Radar 1200 - 1400MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
TEST CIRCUIT DIAGRAM
Board Material: Roger Duriod 6006 @ 25 Mil Thickness, Er=6.15
1214GN-280
280 Watts - 60 Volts, 300 s, 10%
L-Band Radar 1200 - 1400 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
55-KR PACKAGE DIMENSION
Dimension Min (mil) Min (mm) Max (mil) Max (mm)
A 370 9.40 372 9.44
B 498 12.65 500 12.7
C 700 17.78 702 17.83
D 830 21.08 832 21.13
E 1030 26.16 1032 26.21
F 101 2.56 102 2.59
G 151 3.84 152 3.86
H 385 9.78 387 9.83
I 130 3.30 132 3.35
J 003 .076 004 0.10
K 135 3.43 137 3.48
L 105 2.67 107 2.72
M 085 2.16 86 2.18
N 065 1.65 66 1.68
1214GN-280
280 Watts - 60 Volts, 300 s, 10%
L-Band Radar 1200 - 1400 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
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Revision History
Revision Lev el / Date Para. Affected Description
0.1 / 18 January 2013 - Initial Preliminary Release
1214GN-280
280 Watts - 60 Volts, 300 s, 10%
L-Band Radar 1200 - 1400 MHz