For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
GENERAL DESCRIPTION
The 1214GN-280 is an internally matched, COMMON SOURCE, class
AB, GaN on SiC HEMT transistor capable of providing over 17dB gain,
280 Watts of pulsed RF output power at 300μs pulse width, 10% duty
factor across the 1200 to 1400 MHz band.
Market Application – 1214GN-280 is designed for L-Band Pulsed Radar
CASE OUTLINE
55-KR
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 600 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pout=280W, Freq=1200,1300,1400 MHz 280 300 W
Gp Power Gain Pout=280W, Freq=1200,1300,1400 MHz 17 17.3 dB
d Drain Efficiency Pout=280W, Freq=1200,1300,1400 MHz 47 55 %
Dr Droop Pout=280W, Freq=1200,1300,1400 MHz 1.0 dB
VSWR-T Load Mismatch
Tolerance
Pout=280W, Freq= 1300MHz 3:1
Өjc Thermal Resistance Pulse Width=300uS, Duty=10% 0.3 °C/W
Bias Condition: Vdd=+60V, Idq=50mA average cur rent (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off) Drain leakage current VgS = -8V, VD = 60V 10 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 8 mA
BVDSS Drain-source breakdown
voltage
Vgs =-8V, ID = 10mA 250 V
Export Classification: EAR-99
1214GN-280
280 Watts - 60 Volts, 300 s, 10%
L-Band Radar 1200 - 1400 MHz