High speed switching transistor (60V, 5A) 2SC5103 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation Junction temperature Storage temperature PC Tj Tstg Limits 100 60 5 5 10 1 10 150 -55 to +150 Unit V V V A(DC) A(Pulse) W W(Tc=25C) C C 5.1 6.5 0.65 1.5 2.5 ROHM : CPT3 EIAJ : SC-63 9.5 0.5 0.8Min. C0.5 2.3 0.9 1.5 2.3 5.5 0.9 2.3 (3) (2) (1) 1.0 0.5 Absolute maximum ratings (Ta=25C) 0.75 Dimensions (Unit : mm) Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 s at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. (1) Base (2) Collector (3) Emitter Single pulse Pw=100ms Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5103 CPT3 Q TL 2500 Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO BVEBO ICBO IEBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) 100 60 5 - - - - - - 120 40 - - - - - - - - - - 0.15 - - - - - 120 80 - - 0.1 - - - 10 10 0.3 0.5 1.2 1.5 270 - - - 0.3 1.5 0.3 V V V A A V V V V - - MHz pF s s s Parameter DC current transfer ratio hFE Transition frequency Output capacitance Turn-on time Storage time Fall time fT Cob ton tstg tf Conditions IC = 50A IC = 1mA IE = 50A VCB = 100V VEB = 5V IC/IB = 3A/0.15A IC/IB = 4A/0.2A IC/IB = 3A/0.15A IC/IB = 4A/0.2A VCE/IC = 2V/1A VCE/IC = 2V/3A VCB = 10V , IE = -0.5A , f = 30MHz VCE = 10V , IE = 0A , f = 1MHz IC = 3A , RL = 10 IB1 = -IB2 = 0.15A VCC 30V Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.A 2SC5103 Data Sheet Electrical characteristics curves 10 5 35mA 25mA 20mA 15mA 2 10mA IB= 5mA 1 0 1 2 3 1 0.5 0.2 0.1 0.05 0.02 0.01 0.001 0 0.2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) TRANSITION FREQUENCY : fT(MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) VBE(sat) 0.5 25C 100C 0.2 0.1 0.05 Ta=100C 0.02 0.01 0.01 0.02 VCE(sat) -25C 0.05 0.1 0.2 25C 0.5 1 2 5 10 tstg 0.5 tf 0.1 ton 0.05 0.02 0.01 0.05 0.1 0.2 0.5 1 2 1.2 500 1.4 5 10 COLLECTOR CURRENT : IC (A) Fig.7 Switching characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. -25C 20 10 5 2 1 0.01 0.02 1.6 100 50 20 10 5 2 1 -0.001-0.002 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 5 Pw=100ms 10ms 1 0.5 0.2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area 2/3 1 2 5 10 10000 Ta=25C IE=0A f=1MHz 5000 2000 1000 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) DC Tc=25C 0.1 Single nonrepetitive 0.05 pulse 0.5 1 2 0.5 Fig.3 DC current gain vs. collector current -1 Ic MAX (Pulse) 2 0.05 0.1 0.2 COLLECTOR CURRENT : IC (A) 200 10 COLLECTOR CURRENT : IC (A) TURN ON TIME : ton (s) STRAGE TIME : tstg (s) FALL TIME : tf (s) 2 0.2 1.0 Fig.6 Collector output capacitance vs. collector-base voltage Fig.5 Gain bandwidth product vs.emitter current IC=20 IB1= -20 IB2 PULSE 1 25C 50 EMITTER CURRENT : IE (A) Fig.4 Collector-emitter saturation voltage Base-emitter saturation voltage -collector current 5 0.8 Ta=25C VCE=10V COLLECTOR CURRENT : IC (A ) 10 0.6 1000 Ta= -25C 1 0.4 Fig.2 Ground emitter propagation characteristics IC/IB=20 5 2 100 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics 10 Ta=100C 200 0.005 0.002 Ta=25C 4 5 0 2 COLLECTOR OUTPUT CAPACITWANCE : Cob(pF) 3 VCE=2V 500 DC CURRENT GAIN : hFE 30mA 4 1000 VCE= 2V TRANSIENT THERMAL RESISTANCE : Rth(C/W) 40mA 45mA Ta=1 00C 25C -25C A m 50 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 5 10000 (1)Using infinite heat sink (2)Unmounted 1000 (2) 100 (1) 10 1 0.1 0.01 0.001 0.01 0.1 1 10 100 1000 TIME : t (s) Fig.9 Transient thermal resistance 2009.12 - Rev.A 2SC5103 Data Sheet RL=10 IB VIN IB1 IC IB2 IB1 T.U.T. - 30V VCC IB2 IC 90% IC PW PW=50s duty cycle 10% 1% ton -VBB tstg tf Fig.10 Switching characteristic circuit www.rohm.com c 2009 ROHM Co., Ltd. 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