REJ03G1758-0100 Rev.1.00 Nov 28, 200 8
Page 1 of 5
RKS101KG
Silicon Epitaxial Planar Diode for High Voltage Switching
REJ03G1758-0100
Rev.1.00
Nov 28, 2008
Features
• Short reverse recovery time enable fast switching.
• Ultra small Resin Package (URP) is suitable for compact and high-density surface mount design.
Ordering Information
Part No. Laser Mark Package Name Package Code
RKS101KG H3 URP PTSP0002ZA-A
Pin Arrangement
Cathode mark
Mark
12
H3
1. Cathode
2. Anode
RKS101KG
REJ03G1758-0100 Rev.1.00 Nov 28, 200 8
Page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM 420 V
Reverse voltage VR 400 V
Peak forward current IFM 300 mA
Non-Repetitive peak forward surge current IFSM *1 2 A
Average rectified current IO *2 100 mA
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. 10 ms sine wave 1 pulse.
2. See from Fig.4 to Fig.6.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF — — 1.5 V IF = 100 mA
Reverse current IR — — 10 µA VR = 400 V
Capacitance C — — 3 pF VR = 0 V, f = 1 MHz
Reverse recovery time trr — — 100 ns IF = IR = 30mA, Irr = 3mA, RL = 50 Ω
Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1
Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
RKS101KG
REJ03G1758-0100 Rev.1.00 Nov 28, 200 8
Page 3 of 5
Main Characteristics
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
Reverse current I
R
(A)
Forward current I
F
(A)
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
Capacitance C (pF)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage V
R
(V)
0.2
00.40.81.21.0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
0.6
Pulse test
5000100 400
300
200
10
-5
10
-6
10
-7
10
-8
10
-9
Ta = 25°C
Ta = 75°C
Ta = 50°C
Pulse test
1.0
1.0
0.1
10
0.1 100
f = 1MHz
Pulse test
Ta = 75°C
Ta = 50°C
Ta = 25°C
RKS101KG
REJ03G1758-0100 Rev.1.00 Nov 28, 200 8
Page 4 of 5
Reverse power dissipation Pd (W)
Average rectified current I
O
(A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Fig.5
Reverse
power dissipation vs. Reverse voltage
Reverse voltage V
R
(V)
Fig.4 Forward power dissipation vs.
Forward current
Forward current I
F
(A)
Forward power dissipation Pd (W)
00.1
D=1/6
D=1/3
DC
0.05
t
T
0A
D
=
—
T
t
Ta = 25°C
0.15
D=1/2
0.2
0.05
0.1
0.15 Sin
0
0.04
0.02
0.06
0.08
005010025 75 125-25
0.1
0.12 V
R
= 200V
Tj = 150°C
Rth(j-a) = 600°C/W
D=1/3
Sin(θ=180°)
D=1/6
DC
D=1/2
150
0.05
0
100 300
D=1/2
D=2/3
Sin
D=5/6
t
T
0V
D = —
T
t
Tj = 150°C
0
0.1
0.15
0.2
200 400 500
RKS101KG
REJ03G1758-0100 Rev.1.00 Nov 28, 200 8
Page 5 of 5
Package Dimensions
b
D
EHE
A1
A2
b2
l1
l1
e1
Pattern of terminal position areas
0-0.1
A1
0.75 0.90 1.05
A2
0.15 0.30 0.45
1.10 1.25 1.40
b
1.55 1.70 1.85
2.35 2.65
-0.80
2.50
-
-2.30 -
D
-0.80 -
E
HE
b2
e1
l1
Dimension in Millimeters
Min Nom Max
Reference
Symbol
SC-76A 0.004g
MASS[Typ.]
URP / URPVPTSP0002ZA-A
RENESAS CodeJEITA Package Code Previous Code
Package Name
URP
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