MCP1415/16 Tiny 1.5A, High-Speed Power MOSFET Driver Features General Description * High Peak Output Current: 1.5A (typical) * Wide Input Supply Voltage Operating Range: - 4.5V to 18V * Low Shoot-Through/Cross-Conduction Current in Output Stage * High Capacitive Load Drive Capability: - 470 pF in 13 ns (typical) - 1000 pF in 20 ns (typical) * Short Delay Times: 41 ns (tD1), 48 ns (tD2) (typical) * Low Supply Current: - With Logic `1' Input - 0.65 mA (typical) - With Logic `0' Input - 0.1 mA (typical) * Latch-Up Protected: will withstand 500 mA Reverse Current * Logic Input will withstand Negative Swing up to 5V * Space-saving 5L SOT-23 Package MCP1415/16 devices are high-speed MOSFET drivers that are capable of providing 1.5A of peak current. The inverting or non-inverting single channel output is directly controlled from either TTL or CMOS (3V to 18V) logic. These devices also feature low shootthrough current, matched rise and fall time, and short propagation delays which make them ideal for high switching frequency applications. Applications * * * * * Switch Mode Power Supplies Pulse Transformer Drive Line Drivers Level Translator Motor and Solenoid Drive MCP1415/16 devices operate from a single 4.5V to 18V power supply and can easily charge and discharge 1000 pF gate capacitance in under 20 ns (typical). They provide low enough impedances in both the on and off states to ensure that the intended state of the MOSFET will not be affected, even by large transients. These devices are highly latch-up resistant under any condition within their power and voltage ratings. They are not subject to damage when noise spiking (up to 5V, of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 2.0 kV (HBM) and 300V (MM). Package Types: SOT-23-5 MCP1415 MCP1416 5 OUT NC 1 VDD 2 4 GND IN 3 NC 1 VDD 2 IN MCP1416R 5 VDD GND 2 IN 3 2008-2012 Microchip Technology Inc. 4 GND 3 MCP1415R NC 1 5 OUT NC 1 5 VDD GND 2 4 OUT IN 3 4 OUT DS22092E-page 1 MCP1415/16 Functional Block Diagram Inverting VDD 650 A 300 mV Output Non-inverting Input Effective Input C = 25 pF (Each Input) 4.7V MCP1415 Inverting MCP1416 Non-inverting GND Note: DS22092E-page 2 Unused inputs should be grounded. 2008-2012 Microchip Technology Inc. MCP1415/16 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDD, Supply Voltage............................................. +20V VIN, Input Voltage.............. (VDD + 0.3V) to (GND - 5V) Package Power Dissipation (TA = 50C) 5L SOT23...................................................... 0.39W ESD Protection on all Pins ......................2.0 kV (HBM) ....................................................................400V (MM) DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25C, with 4.5V VDD 18V Parameters Sym Min Typ Max Units Conditions Logic `1' High Input Voltage VIH 2.4 1.9 -- V Logic `0' Low Input Voltage VIL -- 1.6 0.8 V Input Current IIN -1 -- +1 A Input Voltage VIN -5 -- VDD+0.3 V VOH VDD - 0.025 -- -- V DC Test Low Output Voltage VOL -- -- 0.025 V DC Test Output Resistance, High ROH -- 6 7.5 IOUT = 10 mA, VDD = 18V (Note 2) Output Resistance, Low ROL -- 4 5.5 IOUT = 10 mA, VDD = 18V (Note 2) Input 0V VIN VDD Output High Output Voltage Peak Output Current IPK -- 1.5 -- A VDD = 18V (Note 2) Latch-Up Protection Withstand Reverse Current IREV 0.5 -- -- A Duty cycle 2%, t 300 s (Note 2) Rise Time tR -- 20 25 ns Figure 4-1, Figure 4-2 CL = 1000 pF (Note 2) Fall Time tF -- 20 25 ns Figure 4-1, Figure 4-2 CL = 1000 pF (Note 2) Delay Time tD1 -- 41 50 ns Figure 4-1, Figure 4-2 (Note 2) Delay Time tD2 -- 48 55 ns Figure 4-1, Figure 4-2 (Note 2) VDD 4.5 -- 18 V IS -- 0.65 1.1 mA VIN = 3V IS -- 0.1 0.15 mA VIN = 0V Switching Time (Note 1) Power Supply Supply Voltage Power Supply Current Note 1: 2: Switching times ensured by design. Tested during characterization, not production tested. 2008-2012 Microchip Technology Inc. DS22092E-page 3 MCP1415/16 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise indicated, over operating range with 4.5V VDD 18V. Parameters Sym Min Typ Max Units VIH 2.4 -- -- V -- 0.8 V Conditions Input Logic `1', High Input Voltage Logic `0', Low Input Voltage VIL -- Input Current IIN -10 -- +10 A Input Voltage VIN -5 -- VDD+0.3 V High Output Voltage VOH VDD - 0.025 -- -- V DC Test Low Output Voltage VOL -- -- 0.025 V DC Test Output Resistance, High ROH -- 8.5 9.5 IOUT = 10 mA, VDD = 18V (Note 2) Output Resistance, Low ROL -- 6 7 IOUT = 10 mA, VDD = 18V (Note 2) Rise Time tR -- 30 40 ns Figure 4-1, Figure 4-2 CL = 1000 pF (Note 2) Fall Time tF -- 30 40 ns Figure 4-1, Figure 4-2 CL = 1000 pF (Note 2) Delay Time tD1 -- 45 55 ns Figure 4-1, Figure 4-2 (Note 2) Delay Time tD2 -- 50 60 VDD 4.5 -- 18 V IS -- 0.75 1.5 mA VIN = 3.0V IS -- 0.15 0.25 mA VIN = 0V 0V VIN VDD Output Switching Time (Note 1) Figure 4-1, Figure 4-2 (Note 2) Power Supply Supply Voltage Power Supply Current Note 1: 2: Switching times ensured by design. Tested during characterization, not production tested. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V Parameter Sym Min Typ Max Units Comments Temperature Ranges Specified Temperature Range TA -40 -- +125 C Maximum Junction Temperature TJ -- -- +150 C Storage Temperature Range TA -65 -- +150 C JA -- 256 -- C/W Package Thermal Resistances Thermal Resistance, 5LD SOT23 DS22092E-page 4 2008-2012 Microchip Technology Inc. MCP1415/16 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25C with 4.5V VDD = 18V. 300 400 250 300 Fall Time (ns) Rise Time (ns) 10,000 pF 10,000 pF 350 6,800 pF 250 470 pF 200 3,300 pF 150 100 1,000 pF 50 6,800 pF 200 470 pF 150 3,300 pF 100 1,000 pF 50 0 0 4 6 8 10 12 14 16 18 4 6 8 Supply Voltage (V) FIGURE 2-1: Voltage. FIGURE 2-4: Voltage. Rise Time vs. Supply 225 125 100 75 18V 50 Fall Time (ns) Rise Time (ns) 150 5V 25 18 Fall Time vs. Supply 12V 125 100 75 18V 50 5V 1000 0 100 10000 1000 Capacitive Load (pF) FIGURE 2-2: Load. Rise Time vs. Capacitive FIGURE 2-5: Load. 54 CLOAD = 1000 pF VDD = 18V 25 tRISE 20 tFALL 10000 Capacitive Load (pF) Propagation Delay (ns) Time (ns) 16 150 25 0 100 15 14 175 12V 175 30 12 200 200 35 10 Supply Voltage (V) Fall Time vs. Capacitive VDD = 12V 52 50 tD2 48 46 tD1 44 42 40 10 -40 -25 -10 5 20 35 50 65 80 95 110 125 4 5 Rise and Fall Times vs. 2008-2012 Microchip Technology Inc. 7 8 9 10 11 12 Input Amplitude (V) Temperature (C) FIGURE 2-3: Temperature. 6 FIGURE 2-6: Input Amplitude. Propagation Delay Time vs. DS22092E-page 5 MCP1415/16 115 0.8 105 0.7 95 Quiescent Current (mA) Propagation Delay (ns) Note: Unless otherwise indicated, TA = +25C with 4.5V VDD = 18V. tD1 85 75 65 tD2 55 45 35 VDD = 18V Input = 1 0.6 0.5 0.4 0.3 0.2 Input = 0 0.1 0 4 6 8 10 12 14 16 18 -40 -25 -10 5 Supply Voltage (V) FIGURE 2-7: Supply Voltage. FIGURE 2-10: Temperature. 55 50 45 tD2 40 35 Quiescent Current vs. 3.0 VDD = 18V Input Threshold (V) Propagation Delay (ns) Temperature (C) Propagation Delay Time vs. 60 tD1 30 2.5 2.0 V HI 1.5 VLO 1.0 0.5 -40 -25 -10 5 4 20 35 50 65 80 95 110 125 6 8 FIGURE 2-8: Temperature. Propagation Delay Time vs. FIGURE 2-11: Voltage. 2.0 0.7 1.9 Input Threshold (V) 0.8 0.6 0.5 Input = 1 0.4 0.3 0.2 Input = 0 0.1 10 12 14 16 18 Supply Voltage (V) Temperature (C) Quiescent Current (mA) 20 35 50 65 80 95 110 125 Input Threshold vs. Supply VDD = 12V VHI 1.8 1.7 1.6 1.5 VLO 1.4 1.3 0 4 6 8 10 12 14 16 18 -40 -25 -10 DS22092E-page 6 Quiescent Current vs. 20 35 50 65 80 95 110 125 Temperature (C) Supply Voltage (V) FIGURE 2-9: Supply Voltage. 5 FIGURE 2-12: Temperature. Input Threshold vs. 2008-2012 Microchip Technology Inc. MCP1415/16 Note: Unless otherwise indicated, TA = +25C with 4.5V VDD = 18V. 140 VDD = 18V 140 Supply Current (mA) Supply Current (mA) 160 1 MHz 120 50 kHz 100 100 kHz 80 60 200 kHz 40 500 kHz 20 0 100 VDD = 18V 470 pF 100 1,000 pF 80 3,300 pF 60 40 6,800 pF 20 0 1000 10 10000 100 Supply Current (mA) 80 FIGURE 2-16: Frequency. Supply Current vs. 120 VDD = 12V 70 50 kHz 60 50 100 kHz 40 200 kHz 30 20 500 kHz 10 0 100 1000 60 3,300 pF 40 1,000 pF 20 1000 35 FIGURE 2-17: Frequency. Supply Current vs. VDD = 6V 60 1 MHz 30 50 kHz 25 20 100 kHz 15 10 5 200 kHz 500 kHz 0 100 1000 10000 Supply Current vs. 2008-2012 Microchip Technology Inc. Supply Current vs. VDD = 6V 10,000 pF 50 40 30 6,800 pF 470 pF 3,300 pF 20 1,000 pF 10 0 100 1000 10000 Frequency (kHz) Capacitive Load (pF) FIGURE 2-15: Capacitive Load. 10000 Frequency (kHz) Supply Current (mA) Supply Current (mA) 40 6,800 pF 470 pF 80 Capacitive Load (pF) FIGURE 2-14: Capacitive Load. 10,000 pF 100 0 100 10000 Supply Current vs. V DD = 12V 1 MHz Supply Current (mA) FIGURE 2-13: Capacitive Load. 1000 Frequency (kHz) Capacitive Load (pF) 90 10,000 pF 120 FIGURE 2-18: Frequency. Supply Current vs. DS22092E-page 7 MCP1415/16 Note: Unless otherwise indicated, TA = +25C with 4.5V VDD = 18V. 30 25 Crossover Energy (A*sec) VIN = 0V (MCP1415) VIN = 5V (MCP1416) ROUT-HI () TA = +125C 20 15 10 T A = +25C 5 0 4 6 8 10 12 14 16 18 1E-07 1E-08 1E-09 1E-10 4 6 FIGURE 2-19: Output Resistance (Output High) vs. Supply Voltage. 12 14 16 18 FIGURE 2-21: Supply Voltage. Crossover Energy vs. VIN = 5V (MCP1415) VIN = 0V (MCP1416) 20 ROUT-LO () 10 Supply Voltage (V) Supply Voltage (V) 25 8 15 T A = +125C 10 TA = +25C 5 0 4 6 8 10 12 14 16 18 Supply Voltage (V) FIGURE 2-20: Output Resistance (Output Low) vs. Supply Voltage. DS22092E-page 8 2008-2012 Microchip Technology Inc. MCP1415/16 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE SOT-23-5 3.1 Symbol Pin MCP1415/6 MCP1415R/6R 1 NC NC Description No Connection 2 VDD GND Supply Input 3 IN IN Control Input 4 GND OUT Ground 5 OUT VDD Output Supply Input (VDD) 3.3 Ground (GND) VDD is the bias supply input for the MOSFET driver and has a voltage range of 4.5V to 18V. This input must be decoupled to ground with a local capacitor. This bypass capacitor provides a localized low impedance path for the peak currents that are to be provided to the load. Ground is the device return pin. The ground pin should have a low impedance connection to the bias supply source return. High peak currents will flow out the ground pin when the capacitive load is being discharged. 3.2 3.4 Control Input (IN) The MOSFET driver input is a high impedance, TTL/ CMOS compatible input. The input also has hysteresis between the high and low input levels, allowing them to be driven from a slow rising and falling signals, and to provide noise immunity. 2008-2012 Microchip Technology Inc. Output (OUT) The output is a CMOS push-pull output that is capable of sourcing and sinking 1.5A of peak current (VDD = 18V). The low output impedance ensures the gate of the external MOSFET will stay in the intended state even during large transients. This output also has a reverse current latch-up rating of 500 mA. DS22092E-page 9 MCP1415/16 4.0 APPLICATION INFORMATION 4.1 General Information VDD = 18V MOSFET drivers are high-speed, high current devices which are intended to source/sink high peak currents to charge/discharge the gate capacitance of external MOSFETs or IGBTs. In high frequency switching power supplies, the PWM controller may not have the drive capability to directly drive the power MOSFET. A MOSFET driver like the MCP1415/16 family can be used to provide additional source/sink current capability. 4.2 1 F Input 0.1 F Ceramic Output CL = 1000 pF MCP1416 MOSFET Driver Timing The ability of a MOSFET driver to transition from a fullyoff state to a fully-on state are characterized by the drivers rise time (tR), fall time (tF), and propagation delays (tD1 and tD2). The MCP1415/16 family of drivers can typically charge and discharge a 1000 pF load capacitance in 20 ns along with a typical turn on (tD1) propagation delay of 41 ns. Figure 4-1 and Figure 4-2 show the test circuit and timing waveform used to verify the MCP1415/16 timing. 1 F 0.1 F Ceramic Input 10% tD1 tF 18V tD1 90% Output tD2 tR tD2 10% 0V 90% tF 10% Non-Inverting Driver Timing Decoupling Capacitors To operate the MOSFET driver over a wide frequency range with low supply impedance, a ceramic and a low ESR film capacitor are recommended to be placed in parallel between the driver VDD and GND. A 1.0 F low ESR film capacitor and a 0.1 F ceramic capacitor placed between pins 2 and 4 is required for reliable operation. These capacitors should be placed close to the driver to minimize circuit board parasitics and provide a local source for the required current. 90% 18V 10% Careful layout and decoupling capacitors are required when using power MOSFET drivers. Large current are required to charge and discharge capacitive loads quickly. For example, approximately 720 mA are needed to charge a 1000 pF load with 18V in 25 ns. MCP1415 0V 0V 4.3 Output CL = 1000 pF +5V 90% Input FIGURE 4-2: Waveform. VDD = 18V Input +5V tR 90% 90% Output 0V FIGURE 4-1: Waveform. DS22092E-page 10 10% 10% Inverting Driver Timing 2008-2012 Microchip Technology Inc. MCP1415/16 4.4 Power Dissipation 4.4.3 The total internal power dissipation in a MOSFET driver is the summation of three separate power dissipation elements. EQUATION 4-1: P T = PL + PQ + P CC OPERATING POWER DISSIPATION The operating power dissipation occurs each time the MOSFET driver output transitions because for a very short period of time both MOSFETs in the output stage are on simultaneously. This cross-conduction current leads to a power dissipation describe in Equation 4-4. EQUATION 4-4: Where: P PT = Total power dissipation PL = Load power dissipation PQ = Quiescent power dissipation PCC = Operating power dissipation 4.4.1 CC = CC f V DD Where: CC = Cross-conduction constant (A*sec) f = Switching frequency VDD = MOSFET driver supply voltage CAPACITIVE LOAD DISSIPATION The power dissipation caused by a capacitive load is a direct function of the frequency, total capacitive load, and supply voltage. The power lost in the MOSFET driver for a complete charging and discharging cycle of a MOSFET is shown in Equation 4-2. EQUATION 4-2: P Where: L = fC V T DD 2 f = Switching frequency CT = Total load capacitance VDD = MOSFET driver supply voltage 4.4.2 QUIESCENT POWER DISSIPATION 4.5 PCB Layout Considerations Proper PCB layout is important in high current, fast switching circuits to provide proper device operation and robustness of design. Improper component placement may cause errant switching, excessive voltage ringing, or circuit latch-up. PCB trace loop area and inductance must be minimized. This is accomplished by placing the MOSFET driver directly at the load and placing the bypass capacitor directly at the MOSFET driver (Figure 4-3). Locating ground planes or ground return traces directly beneath the driver output signal also reduces trace inductance. A ground plane will also help as a radiated noise shield as well as providing some heat sinking for power dissipated within the device (Figure 4-4). The power dissipation associated with the quiescent current draw depends upon the state of the input pin. The MCP1415/16 devices have a quiescent current draw when the input is high of 0.65 mA (typical) and 0.1 mA (typical) when the input is low. The quiescent power dissipation is shown in Equation 4-3. EQUATION 4-3: PQ = IQH D + IQL 1 - D VDD Where: IQH = Quiescent current in the high state D = Duty cycle IQL = Quiescent current in the low state VDD = MOSFET driver supply voltage 2008-2012 Microchip Technology Inc. FIGURE 4-3: (TOP). Recommended PCB Layout FIGURE 4-4: (BOTTOM). Recommended PCB Layout DS22092E-page 11 MCP1415/16 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 5-Lead SOT-23 Example Standard Markings for SOT-23 XXNN Part Number 1 Legend: XX...X Y YY WW NNN e3 * Note: DS22092E-page 12 FYNN Code MCP1415T-E/OT FYNN MCP1416T-E/OT FZNN MCP1415RT-E/OT F7NN MCP1416RT-E/OT F8NN 1 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2008-2012 Microchip Technology Inc. MCP1415/16 /HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU 27 >627@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ b N E E1 3 2 1 e e1 D A2 A c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icrochip Technology Inc. DS22092E-page 13 MCP1415/16 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS22092E-page 14 2008-2012 Microchip Technology Inc. MCP1415/16 APPENDIX A: REVISION HISTORY Revision E (May 2012) The following is the list of modifications: Updated the Electrostatic Discharge (ESD) value to 300V (MM). Revision D (December 2010) The following is the list of modifications: 1. 2. Updated Figure 2-19 and Figure 2-20. Updated the package outline drawings. Revision C (December 2008) The following is the list of modifications: Added the MCP1415R/16R devices throughout the document. Revision B (June 2008) The following is the list of modifications: 1. 2. 3. 4. 5. 6. DC Characteristics table, Switching Time, Rise Time: changed from 13 to 20. DC Characteristics table, Switching Time, Fall Time: changed from 13 to 20. DC Characteristics (Over Operating Temperature Range) table, Switching Time, Rise Time: changed maximum from 35 to 40. DC Characteristics (Over Operating Temperature Range) table, Switching Time, Rise Time: changed typical from 25 to 30. DC Characteristics (Over Operating Temperature Range) table, Switching Time, Fall Time: changed maximum from 35 to 40. DC Characteristics (Over Operating Temperature Range) table, Switching Time, Fall Time: changed typical from 25 to 30. Revision A (June 2008) Original release of this document. 2008-2012 Microchip Technology Inc. DS22092E-page 15 MCP1415/16 NOTES: DS22092E-page 16 2008-2012 Microchip Technology Inc. MCP1415/16 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -X /XX Device Temperature Range Package Examples: a) b) Device: MCP1415T: 1.5A MOSFET Driver, Inverting (Tape and Reel) MCP1415RT:1.5A MOSFET Driver, Inverting (Tape and Reel) MCP1416T: 1.5A MOSFET Driver, Non-Inverting (Tape and Reel) MCP1416RT:1.5A MOSFET Driver, Non-Inverting (Tape and Reel) a) b) MCP1415T-E/OT: 1.5A Inverting, MOSFET Driver 5LD SOT-23 Package MCP1415RT-E/OT: 1.5A Inverting, MOSFET Driver 5LD SOT-23 Package MCP1416T-E/OT: 1.5A Non-Inverting, MOSFET Driver 5LD SOT-23 Package MCP1416RT-E/OT: 1.5A Non-Inverting, MOSFET Driver 5LD SOT-23 Package Temperature Range: E = -40C to +125C Package: * OT = Plastic Thin Small Outline Transistor (OT), 5-Lead * All package offerings are Pb Free (Lead Free) 2008-2012 Microchip Technology Inc. DS22092E-page 17 MCP1415/16 NOTES: DS22092E-page 18 2008-2012 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." 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Analog-for-the-Digital Age, Application Maestro, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2008-2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62076-110-6 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2008-2012 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. DS22092E-page 19 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Japan - Osaka Tel: 81-66-152-7160 Fax: 81-66-152-9310 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 China - Hangzhou Tel: 86-571-2819-3187 Fax: 86-571-2819-3189 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-330-9305 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 DS22092E-page 20 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 11/29/11 2008-2012 Microchip Technology Inc.