Data Sheet Switching Diode UMN1N Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) (5) 0.150.05 2.10.1 1.6 (4) 1.250.1 Features 1) Small mold type. (UMD5) 2) High reliability. 0.9 0.35 2.00.2 0.25 0.1 Each lead has same dimension 0.05 00.1 (2) 0.65 0.65 0.65 0.1Min (1) (3) UMD5 0.65 0.7 1.30.1 0.90.1 Construction Silicon epitaxial planar Structure ROHM : UMD5 JEDEC : SOT-353 JEITA : SC-88A dot (year week factory) Taping specifications (Unit : mm) 1.550.1 0 2.00.05 0.30.1 Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Limits 2.40.1 8.00.2 00.5 2.40.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg 1.10.1 4.00.1 2.250.1 0 5.50.2 2.450.1 3.50.05 1.750.1 4.00.1 1.150.1 Unit V V mA mA mA mW C C 80 80 80 25 250 150 150 55 to 150 Min. Typ. Max. Unit Conditions IF=5mA - - 0.9 V Reverse current IR - - 0.1 A VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B Data Sheet UMN1N 100 100000 Ta=150 Ta=25 Ta=-25 1 1000 Ta=75 100 Ta=25 10 Ta=-25 1 0.1 0.01 0.1 200 300 400 500 600 700 800 0.1 0 900 1000 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 700 690 680 AVE:682.7mV 660 0 80 70 60 50 40 30 AVE:7.689nA 20 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 10 AVE:2.50A 5 8 7 6 5 4 3 2 10 1 0 0 AVE:1.91pF Ct DISPERSION MAP 10 15 0 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 8 7 6 5 4 AVE:1.26ns 3 2 1 5 0 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 0 1 IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=1mA 1ms IF=10mA time ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 Ta=25 VR=0V f=1MHz n=10pcs 9 IR DISPERSION MAP 20 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 VF DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 80 Ta=25 VR=70V n=10pcs 90 Ta=25 IF=5mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 20 30 40 50 60 70 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 100 710 670 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MHz 1 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 10 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 10 Ta=150 10000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Ta=75 AVE:2.06kV AVE:0.57kV 300us 10 0.001 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 1000 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A