MAC8DG - LITTELFUSE - Datasheet.Live

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/19/21

MAC8DG, MAC8MG, MAC8NG

Surface Mount – 400V -800V

■Blocking Voltage to 800 Volts

■ On−State Current Rating of

8.0 Amperes RMS at 100°C

■Uniform Gate Trigger Currents

in Three Quadrants

■High Immunity to dv/dt − 250

V/µs minimum at 125°C

■Minimizes Snubber Networks

for Protection

■Industry Standard TO−220

Package

■High Commutating di/dt − 6.5

A/ms minimum at 125°C

■These Devices are Pb−Free

and are RoHS Compliant

Features

Designed for high performance full−wave ac control applications

where high noise immunity and high commutating di/dt are

required. The MAC8xG series is designed for high performance

full-wave AC control applications where high noise immunity and

high commutating di/dt are required.

Description

Additional Information

Functional Diagram

MT 1

MT 2

Pin Out

CASE 221A

STYLE 4

Resources Accessories Samples

RoHS

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/19/21

MAC8DG, MAC8MG, MAC8NG

Surface Mount – 400V -800V

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)

MAC8DG

MAC8MG

MAC8NG

VDRM,

VRRM

400

600

800

On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C) IT (RMS) 8.0 A

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz, TC= 125°C) ITSM 80 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 26 A²sec

Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 16 W

Average Gate Power (t=8.3ms, TJ = 80°C) PG(AV) 0.35 W

Operating Junction Temperature Range TJ-40 to +125 °C

Storage Temperature Range Tstg -40 to +150 °C

Maximum Ratings (TJ = 25°C unless otherwise noted)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Thermal Characteristics

Rating Symbol Value Unit

Thermal Resistance, Junction−to−Case (AC)

Junction−to−Ambient

RƟJC

RƟJA

2.2

62.5 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL260 °C

Characteristic Symbol Min Ty p Max Unit

Peak On−State Voltage (Note 4) (ITM = ±6.0 A) VTM −1. 3 1. 6 V

Gate Trigger Current

(Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

IGT

5.0 13 35.0

mAMT2(+), G(−) 5.0 16 35.0

MT2(−), G(−) 5.0 18 35.0

Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA)) IH– 20 40 mA

Latching Current

(VD = 24 V, IG = 35 mA)

MT2(+), G(+)

_ 20 50

mAMT2(+), G(−) _ 30 80

MT2(−), G(−) _ 20 50

Gate Trigger Voltage

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

VGT

0.5 0.69 1. 5

VMT2(+), G(−) 0.5 0.77 1. 5

MT2(−), G(−) 0.5 0.72 1. 5

Gate Non−Trigger Voltage

(TJ = 125°C)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

VGD

0.2 − −

MT2(+), G(−) 0.2 − −

MT2(−), G(−) 0.2 − −

Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both

directions)

Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both

directions)

Characteristic Symbol Min Ty p Max Unit

Peak Repetitive Blocking Current

(VD = VDRM = VRRM; Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

- - 0.01 mA

- - 2.0

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/19/21

MAC8DG, MAC8MG, MAC8NG

Surface Mount – 400V -800V

Voltage Current Characteristic of SCR

Quadrant Definitions for a Triac

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

VTM Maximum On State Voltage

IHHolding Current

Dynamic Characteristics

+C urrent

+V oltage

VTM

IDR M at VDR M

on stat e

off stat e

IRR M at VRR M

Quadrant 1

Main Terminal 2 +

Quadrant 3

Main Terminal 2 VTM

All polarities are referenced to MT1.

With in phase signals (using standard AC lines) quadrants I and III are used

MT 1

(+) IGT

GA TE

(+) MT 2

RE F

MT 1

() IGT

GA TE

(+) MT 2

RE F

MT 1

(+) IGT

GA TE

() MT 2

RE F

MT 1

() IGT

GA TE

() MT 2

RE F

MT2 NEGA TIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

VItnardauQIIItnardauQ

ItnardauQIItnardauQ

IGT +I GT

Characteristic Symbol Min Ty p Max Unit

Rate of Change of Commutating Current See Figure 10.(VD = 400 V, ITM =

4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C, f = 250 Hz, No

Snubber) CL = 10 µF LL = 40 mH

(dv/dt)c 6.5 − − A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 250 − − V/µs

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/19/21

MAC8DG, MAC8MG, MAC8NG

Surface Mount – 400V -800V

Figure 4. Thermal Response

Figure 5. Hold Current Variation

Figure 3. On−State Characteristics

t, TIME (ms)

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.1

0.01 4

10001001010.1

TJ, JUNCTION TEMPERA TURE (°C)

IH, HOLD CURRENT (mA)

500901

MT2 POSITIVE

MT2 NEGATIVE

IT(RMS )

125

120

115

110

105

100

TC, CASE TEMPERATURE (C )°

α = 120, 90, 60, 30°

α = 180°

0 1 2 3 4 5 6 7 8

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

120°

IT(RMS )

PAV

, AVERAGE POWER (WATTS)

α = 30°

180°

90°

60°

0 1 2 3 4 5 6 7 8

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/19/21

MAC8DG, MAC8MG, MAC8NG

Surface Mount – 400V -800V

Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation

Figure 10. Simpliﬁed Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)

LL1N4007

200 V

MEASURE

CHARGE

CONTROL

CHARGE TRIGGER

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential) Figure 9. Critical Rate of Rise of CommutatingVoltage

(di/dt)

c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

VDRM

(di/dt)

c = 6f ITM

1000

f = 1

2 tw

TJ = 125°C 100 °C 75°C

0601

100

(dv/dt) , CRITICAL RATE OF RISE OF

(V/s )µ

COMMUTATING VOLTAGE

15 20 25 30 35 40 45 50 55

Note: Component values are for veriﬁcation of rated (di/dt)c. See AN1048 for additional information

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/19/21

MAC8DG, MAC8MG, MAC8NG

Surface Mount – 400V -800V

Device Package Shipping

MAC8DG

TO-220AB

(Pb-Free) 1000 Units / Box

MAC8MG

MAC8NG

Dimensions Part Marking System

12 3

SEATING

PLANE

Pin Assignment

1Main Terminal 1

2Main Terminal 2

3 Gate

4 No Connection

Ordering Information

TO 220AB

CASE 221A

STYLE 12

123

1. Dimensioning and tolerancing per ansi y14.5m, 1982.

2. Controlling dimension: inch.

3. Dimension z deﬁnes a zone where all body and lead irregularities are allowed.

Dim Inches Millimeters

Min Max Min Max

A0.590 0.620 14.99 15.75

B0.380 0.420 9.65 10.67

C0.178 0.188 4.52 4.78

D0.025 0.035 0.64 0.89

F0.142 0.147 3.61 3.73

G0.095 0.105 2.41 2.67

H0.110 0.13 0 2.79 3.30

J0.018 0.024 0.46 0.61

K0.540 0.575 13.72 14.61

L0.060 0.075 1.52 1.91

N0.195 0.205 4.95 5.21

Q0.105 0.115 2.67 2.92

R0.085 0.095 2.16 2.41

S0.045 0.060 1. 14 1.52

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1. 15 ---

Z--- 0.080 --- 2.04

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not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.

MAC8xG

YMAXX

x =D, M, or N

Y =Year

M =Month

A =Assembly Site

XX =Lot Serial Code

G =Pb-Free Package