Semiconductor Group 1 Dec-20-1996
BAS 125W
Preliminary data
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W BAS 125-04W BAS 125-06W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAS 125-04W 14s Q62702- 1 = A1 2 = C2 3=C1/A2 SOT-323
BAS 125-05W 15s Q62702- 1 = A1 2 = A2 3=C1/C2 SOT-323
BAS 125-06W 16s Q62702- 1 = C1 2 = C2 3=A1/A2 SOT-323
BAS 125W 13s Q62702- 1 = A 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
V
R 25 V
Forward current
I
F 100 mA
Surge forward current (
t
≤ 10ms)
I
FSM 500
Total Power dissipation
T
S ≤ 25 °C
P
tot 250 mW
Junction temperature
T
j 150 °C
Storage temperature
T
stg - 55 ... + 150
Thermal Resistance
Junction ambient, BAS125W 1)
R
thJA ≤ 310 K/W
Junction ambient, BAS 125-04W...06W 1)
R
thJA ≤ 425
Junction - soldering point, BAS125W
R
thJS ≤ 230
Junction - soldering point, BAS125-04W...06W
R
thJS ≤ 265
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group 2 Dec-20-1996
BAS 125W
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R = 20 V
V
R = 25 V
I
R
-
--
- 200
150 nA
Forward voltage
I
F = 1 mA
I
F = 10 mA
I
F = 35 mA
V
F
-
-
-
800
530
385
900
650
400 mV
AC Characteristics
Diode capacitance
V
R = 0 V,
f
= 1 MHz
C
T- - 1.1 pF
Differential forward resistance
I
F = 5 mA,
f
= 10 kHz
R
F- 16 - Ω
Semiconductor Group 3 Dec-20-1996
BAS 125W
Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on epoxy
BAS 125W
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
mA
100
I
F
T
S
T
A
Permissible Pulse Load
R
THJS =
f
(
t
p)
BAS 125W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax/
I
FDC =
f
(
t
p)
BAS 125W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 4 Dec-20-1996
BAS 125W
Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on epoxy
BAS 125-04W... (
I
F per diode)
020 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
mA
100
I
F
T
S
T
A
Permissible Pulse Load
R
THJS =
f
(
t
p)
BAS 125-04W...
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax/
I
FDC =
f
(
t
p)
BAS 125-04W...
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 5 Dec-20-1996
BAS 125W
Forward Current
I
F =
f
(
V
F)Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz
Reverse current
I
R =
f
(
V
R)
T
A = Parameter
Differential forward resistance
R
F =
f
(
I
F)
f
= 10kHz
