©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 06/06/18
General Purpose ESD Protection - SP1054
Notes:
1. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
IPP Peak Current (tp=8/20μs) 3 1A
TOP Operating Temperature -40 to 125 °C
TSTOR Storage Temperature -55 to 150 °C
Electrical Characteristics (TOP=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR≤1μA 12 V
Breakdown Voltage VBR IR=1mA 13 15 V
Reverse Leakage Current ILEAK VR=12V 0.02 0.5 μA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Fwd 18.5 22 V
IPP=3A, tp=8/20µs, Fwd 22.5 27 V
Dynamic Resistance2RDYN TLP, tP=100ns, I/O to I/O 0.48 Ω
ESD Withstand Voltage1VESD
IEC 61000-4-2 (Contact Discharge) ±24 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance1CDReverse Bias=0V 11 14 pF
Note:
1 Parameter is guaranteed by design and/or component characterization.
2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
Clamp voltage vs. IPP for 8/20μs Waveshape
0.0
5.0
10.0
15.0
20.0
25.0
11.5 22.5 3
Clamp Voltage-Vc (V)
Peak Pulse Current-I
PP
(A)
Capacitance vs. Reverse Bias
0.0
3.0
6.0
9.0
12.0
012345678910 11 12
Capacitance (pF)
Reverse Bias Voltage (V)
SP1312