DATA SH EET
Product specification
Supersedes data of 1998 Jan 08 1998 Mar 26
DISCRETE SEMICONDUCTORS
BAS316
High-speed diode
d
book, halfpage
M3D049
1998 Mar 26 2
Philips Semiconductors Product specification
High-speed diode BAS316
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS316 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD323 SMD plastic package.
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: A6.
Cathode side indicated by a bar.
handbook, halfpage
MAM157
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the cathode tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 85 V
VRcontinuous reverse voltage 75 V
IFcontinuous forward current Ts=90°C; note 1; see Fig.2 250 mA
IFRM repetitive peak forward current 500 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs4A
t=1ms 1A
t=1s 0.5 A
Ptot total power dissipation Ts=90°C; note 1 400 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
1998 Mar 26 3
Philips Semiconductors Product specification
High-speed diode BAS316
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Soldering point of the cathode tab.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.3
IF= 1 mA 715 mV
IF= 10 mA 855 mV
IF=50mA 1 V
I
F= 150 mA 1.25 V
IRreverse current see Fig.5
VR= 25 V 30 nA
VR=75V 1 µA
V
R= 25 V; Tj= 150 °C30µA
V
R
= 75 V; Tj= 150 °C; 50 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 1.5 pF
trr reverse recovery time when switched from IF= 10 mA to IR= 10 mA;
RL= 100 ; measured at IR= 1 mA; see Fig.7 4ns
V
fr forward recovery voltage when switched from IF= 10 mA; tr= 20 ns; see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point note 1 150 K/W
1998 Mar 26 4
Philips Semiconductors Product specification
High-speed diode BAS316
GRAPHICAL DATA
Fig.2 Maximum permissible continuous
forward current as a function of
soldering point temperature.
handbook, halfpage
0 100 15050 200
400
500
300
200
0
100
MGM762
Ts (oC)
IF
(mA)
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
101104
102103
10
1
1998 Mar 26 5
Philips Semiconductors Product specification
High-speed diode BAS316
Fig.5 Reverse current as a function of
junction temperature.
105
104
10 200
0
MGA884
100 T ( C)
jo
IR
(nA)
103
102
75 V
25 V
typ
max
V = 75 V
R
typ
Fig.6 Diode capacitance as a function of
reverse voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
1998 Mar 26 6
Philips Semiconductors Product specification
High-speed diode BAS316
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) IR= 1 mA.
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ= 0.05;
Oscilloscope: rise time tr= 0.35 ns.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SIF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Forward recovery voltage test circuit and waveforms.
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp100 ns; duty factor δ≤0.005.
trt
tp
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k 450
D.U.T.
MGA882
Vfr
t
output
signal
V
1998 Mar 26 7
Philips Semiconductors Product specification
High-speed diode BAS316
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD323 98-09-14
0 1 2 mm
scale
SOD323
UNIT bpcDEQv
mm 0.40
0.25
+ 0.05
0.05 0.25
0.10 0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3 0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
12
H
E
L
p
A
E
b
p
A
1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
,
vMA
A
c
(1)
1998 Mar 26 8
Philips Semiconductors Product specification
High-speed diode BAS316
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1998 Mar 26 9
Philips Semiconductors Product specification
High-speed diode BAS316
NOTES
1998 Mar 26 10
Philips Semiconductors Product specification
High-speed diode BAS316
NOTES
1998 Mar 26 11
Philips Semiconductors Product specification
High-speed diode BAS316
NOTES
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Printed in The Netherlands 115104/00/03/pp12 Date of release: 1998 Mar 26 Document order number: 9397 750 03406