®
TMMBAT 42
TMMBAT 43
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage fast switching.
These devices have integrated protect ion against
excessive voltage such as electrostatic discharges.
August 1999 Ed: 1A
MINIMELF
(Glass)
Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 30 V
IFForward Continuous Current Tl = 25 °C200 mA
IFRM Repetitive Peak Fordware Current tp ≤ 1s
δ ≤ 0.5 500 mA
IFSM Surge non Repetitive Forward Current tp = 10ms 4 A
Ptot Power Dissipation Tl = 65 °C200 mW
Tstg
TjStorage and Junction Temperature Range - 65 to 150
- 65 to 125 °C
°C
TLMaximum Temperature for Soldering during 15s 260 °C
ABSOLUTE RATINGS (limiting values )
Symbol Test Conditions Value Unit
Rth(j-l) Junction-leads 300 °C/W
THERMAL RESISTANCE
1/4
* Pu lse t es t: tp ≤ 300µs
δ
<
2%.
Symbol Test Conditions Min. Typ. Max. Unit
VBR Tj = 25°CI
R
= 100µA30 V
VF*Tj = 25°CIF = 200mA All Types 1 V
Tj = 25°CIF = 10mA BAT 42 0.4
Tj = 25°CIF = 50mA 0.65
Tj = 25°CIF = 2mA BAT 43 0.26 0.33
Tj = 25°CIF = 15mA 0.45
IR*Tj = 25°CVR = 25V 0.5 µA
Tj = 100°C100
STATIC CHAR ACTERISTICS
ELECTRI CAL CHARACTERISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
CTj = 25°CV
R
= 1V f = 1MHz 7pF
trr Tj = 25°CI
F
= 10mA IR = 10mA irr = 1mA RL = 100Ω5ns
ηT
j
= 25°CR
L
= 15KΩCL = 300pF f = 45MHz Vi = 2V 80 %
DYNA MIC CHA RA CTERIS T ICS
2/4
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
TMMBAT 42/TMMBAT 43
Figure 3. Reverse current versus junction
temperature. Figure 4. Rever se current versus continuous
reverse voltage (typi cal values).
Figure 5. Forward current versus forward
voltage (typical values).
3/4
TMMBAT 42/TMM B AT 43
Marki ng: ring at cathode end.
Weight: 0.05g
PACKAGE M ECH ANICAL DATA
FOOT PRINT DIMENSIONS (Millimeter)
MINIMELF G lass
B
A
C
C
O
/
2.5
5
2
4/4
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 3.30 3.40 3.6 0.130 0.134 0.142
B 1.59 1.60 1.62 0.063 0.063 0.064
C 0.40 0.45 0.50 0.016 0.018 0.020
D 1.50 0.059
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use of such in formation nor for any infringement of patents or other rights of th ir d parties which may result from i ts use. N o license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Speci fications mentioned in this publication are s ubj e c t to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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TMMBAT 42/TMMBAT 43
