PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 - 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 23 60 22 50 Gain G (dB) Gain 21 40 20 30 19 20 Effficiency (%) VDD = 28 V, IDQ = 650 mA, = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz Efficiency 18 10 b090901 gr 1 31 33 35 37 39 41 43 45 47 PTFB090901FA Package H-37265-2 Features Two-carrier WCDMA Drive-up 17 PTFB090901EA Package H-36265-2 0 49 * Input and output internal matching * Typical CW performance, 960 MHz, 28 V - Output power at P1dB = 90 W - Efficiency = 65% * Typical two-carrier WCDMA performance, 960 MHz, 28 V - Average output power = 20 W - Linear Gain = 20.8 dB - Efficiency = 35% - Intermodulation distortion = -35 dBc * Integrated ESD protection * Low thermal resistance * Pb-free and RoHS-compliant * Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power Output Power, Avg. (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 25 W average, = 960 MHz 3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 19 19.5 -- dB Drain Efficiency D 36 40 -- % ACPR -- -35 -31.5 dBc Adjacent Channel Power Ratio All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Target RF Characteristics (cont.) Two-tone Specifications (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 70 W PEP, = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps -- 19.5 -- dB Drain Efficiency D -- 48 -- % Intermodulation Distortion IMD -- -30 -- dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A RDS(on) -- 0.123 -- On-state Resistance VGS = 10 V, VDS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 650 mA VGS -- 3.8 -- V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS -6 to +10 V Junction Temperature TJ 200 C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 85 W CW) RJC 0.73 C/W Ordering Information Type and Version Order Code Package Package Description Shipping PTFB090901EA V1 PTFB090901EAV1XWSA1 H-36265-2 Ceramic open-cavity, bolt-down Tray PTFB090901EA V1 R250 PTFB090901EAV1R250XTMA1 H-36265-2 Ceramic open-cavity, bolt-down Tape & Reel, 250 pcs PTFB090901FA V1 PTFB090901FAV1XWSA1 H-37265-2 Ceramic open-cavity, earless Tray PTFB090901FA V1 R250 PTFB090901FAV1R250XTMA1 H-37265-6/2 Ceramic open-cavity, earless Tape & Reel, 250 pcs Data Sheet 2 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz VDD = 28 V, IDQ = 650 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW 60 50 Efficiency -25 40 IMD Up -30 30 IMD Low -35 35 20 -40 IM3 Low IM3 Up -25 Imd (dBc) -20 -20 Effficiency (%) IMD (dB Bc), ACPR (dBc) -15 10 -30 960 MHz 940 MHz 920 MHz -35 -40 ACPR 0 b090901 gr 3 31 34 37 40 43 46 -45 49 b090901 gr 2 31 35 37 39 41 43 45 47 Output Power, Avg. (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, = 960 MHz, 3GPP WCDMA signal, TM1 w/64 DPCH, 100% clipping, PAR = 10 dB, 3.84 MHz BW Adjacent Chan nnel Power Ratio (dB) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, = 960 MHz, 3GPP WCDMA signal, TM1 w/64 DPCH, 43% clipping, PAR = 7.5 dB, 3.84 MHz BW 60 0 Efficiency -10 50 -20 40 ACPR Low -30 30 ACPR Up -40 20 -50 10 -60 b090901 gr 4 32 35 38 41 44 47 Drain Efficiency (%) Intermodula aion Distortion (dBc) Output Power, Avg. (dBm) 33 0 50 60 Efficiency -10 50 -20 40 -30 30 ACPU -40 20 -50 10 ACPL -60 b090901 gr 5 32 35 38 41 44 47 0 50 Output Power, Avg. (dBm) Output Power, Avg. (dBm) Data Sheet 0 Drain Efficiency (%) -45 3 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Broadband CW Power Sweep VDD = 28 V, IDQ = 620 mA, POUT = 28 W, VDD = 30 V, IDQ = 650 mA, = 960 MHz 50 -10 40 -20 IML3 30 -30 20 -40 Gain 10 855 900 945 990 1035 -50 1080 21 60 Gain 20 19 40 18 17 20 16 10 b090901 gr 7 34 46 Two-tone Drive-up Two-tone Drive-up VDD = 30 V, IDQ = 650 mA, 1 = 960 MHz, 2 = 959 MHz 22 60 50 21 50 40 3rd Order IMD 30 -45 20 Efficiency -55 b090901 gr 8 42 45 48 Gain (dB) G -35 39 0 50 60 Effiiciency (%) IM MD (dBc) 42 Output Power, Avg. (dBm) -25 Gain 20 40 19 30 Efficiencyy 18 20 10 17 10 0 16 51 b090901 gr 9 33 Output Power, PEP (dBm) Data Sheet 38 VDD = 28 V, IDQ = 650 mA, 1 = 960 MHz, 2 = 959 MHz 36 30 Effi i Efficiency Frequency (MHz) 33 50 15 b090901 gr 6 810 70 36 39 42 45 48 Effic ciency (%) Efficiency 22 Efficiiency (%) 0 IRL Ga ain (dB) Gain (dB B), Efficiency (%) . 60 Return Loss (dB) / ACP (dBc) 3GPP WCDMA signal 0 51 Output Power, PEP (dBm) 4 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Intermodulation Distortion vs. Output Power Two-tone Drive-up at selected frequencies VDD = 28 V, IDQ = 650 mA, 1 = 960 MHz, 2 = 959 MHz VDD = 28 V, IDQ = 650 mA, 1 MHz tone spacing -20 3rd Order -30 5th -30 IMD D (dBc) IMD 3rrd Order (dBc) -20 -40 960 MHz 940 MHz 920 MHz -50 -60 36 39 42 45 7th -50 50 -60 -70 b090901 gr 10 33 -40 48 b090901 gr 11 33 51 36 VDD = 28 V, = 960 MHz 50 20 40 19 30 18 +25C 20 17 +85C -30C 10 16 b090901 gr 12 38 40 42 44 46 48 Pow wer Gain (dB) 21 Effficiency (%) Gain G (dB) 23 IDQ = 980 mA 60 Efficiency 51 CW Drive-up Gain 22 21 IDQ = 650 mA 20 19 IDQ = 330 mA 0 18 50 b090901 gr 13 34 Output Power, Avg. (dBm) Data Sheet 48 CW Drive-up (over temperature) 70 36 45 Output Power, PEP (dBm) 23 34 42 Output Power, PEP (dBm) VDD = 28 V, IDQ = 650 mA, = 960 MHz 22 39 36 38 40 42 44 46 48 50 Output Power, Avg. (dBm) 5 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Frequency MHz R jX 900 2.3 920 Z Load R jX -6.4 3.8 -2.6 2.2 -6.2 3.6 -2.3 940 2.1 -6.0 3.5 -2.1 960 1.9 -5.8 3.4 -1.8 980 1.8 -5.6 3.3 -1.6 D Z Source Z Load G S See next page for reference circuit information Data Sheet 6 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Reference Circuit R804 10 Ohm R805 10 Ohm S3 8 C802 100000 pF S2 4 1 In Out NC NC 2 3 6 7 5 C801 100000 pF 3 R803 1200 Ohm R801 1000 Ohm C805 100000 pF C101 33 pF TL106 TL101 C105 10000 pF TL119 TL112 2 TL105 2 4 S 3 E C103 4.7 pF R101 10 Ohm TL114 TL116 3 3 1 2 2 1 TL102 PORT RF_IN TL115 TL108 3 2 1 2 TL113 TL111 r = 3.48 C102 10000 pF 3 1 R103 10 Ohm TL104 C804 100000 pF C R102 5100 TL117 3 1 2 1 B R802 1300 Ohm C104 4710000 pF TL118 3 1 S1 C803 100000 pF C106 4.8 pF C109 8.2 pF TL125 TL126 TL109 TL128 TL103 TL127 TL123 2 H = 20 mil 1 RO/RO4350B1 TL121 TL120 TL124 1 TL107 3 1 2 b090901 TL110 ef a - v1_ B D- i n_ 1- 27 - 2012 TL122 2 3 1 4 C108 1.5 pF PORT GATE DUT 2 3 C107 4.8 pF Reference circuit input schematic for = 960 MHz C207 10000000 pF TL212 1 TL218 2 PORT 1 TL208 TL210 TL209 TL213 1 2 3 TL215 TL235 TL217 1 3 1 2 2 3 DCVS C203 100000 pF C216 10000000 pF C204 1000000 pF 1 3 C205 10000000 pF 3 2 TL239 DRAIN DUT 2 C206 33 pF 1 TL220 TL238 TL204 TL211 1 3 TL216 TL214 TL240 3 2 C211 2.5 pF TL245 2 TL246 3 1 TL203 2 TL202 3 1 1 TL226 C214 33 pF TL225 TL227 TL228 TL224 PORT RF_OUT 2 2 3 4 4 C210 2.5 pF TL237 C201 0.9 pF TL223 C209 10000000 pF TL222 TL221 TL229 TL230 2 TL205 3 1 r = 3.48 H = 20 mil RO/RO4350B1 TL242 C212 1000000 pF C208 33 pF TL207 TL231 TL241 2 TL232 3 3 2 1 C213 100000 pF C215 10000000 pF TL233 TL243 TL244 3 2 1 TL234 TL219 TL201 3 2 TL206 1 1 2 3 1 C202 10000000 pF TL236 3 2 1 b090901 ef a - v1_ B D- out _1 - 27 - 2012 DCVS Reference circuit input schematic for = 960 MHz Data Sheet 7 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB090901EA or PTFB090901FA Test Fixture Part No. LTN/PTFB090901EA (PTFB090901EA) LTN/PTFB090901FA (PTFB090901FA) Rogers RO4350, 0.508 mm [0.020"] thick, 2 oz. copper, r = 3.48 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower PCB Electrical Characteristics at 960 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL102 TL103 TL104 TL105 TL106 TL107 TL108 TL109 0.0064 , 69.6 W = 0.65, L = 1.23 W = 25, L = 48 W = 1.1, L = 23.38 W = 43, L = 921 0.1658 , 69.6 W = 0.65, L = 31.91 W = 25, L = 1256 W = 0.65, L = 3.94 W = 25, L = 155 0.0014 , 26.81 W = 2.79, L = 0.25 W = 110, L = 10 W = 12.37, L = 3.37 W = 487, L = 133 0.0014 , 26.81 W = 2.79, L = 0.25 W = 110, L = 10 0.1238 , 51.53 0.0205 , 69.6 0.0195 , 7.47 0.0369 , 51.53 W = 1.1, L = 6.97 W = 43, L = 275 TL114, TL115, TL116, TL117, TL118, TL119 0.014 , 26.81 W1 = 2.79, W2 = 2.79, W3 = 2.54 W1 = 110, W2 = 110, W3 = 100 TL120 0.0037 , 7.47 W1 = 12.37, W2 = 12.37, W3 = 0.65 W1 = 487, W2 = 487, W3 = 25 TL122 TL123 TL124 TL126, TL128 Data Sheet 0.0294 , 7.47 0.0094 , 51.53 0.0183 , 51.53 0.0055 , 34.08 W = 12.37, L = 5.08 W = 487, L = 200 W1 = 1.1, W2 = 1.1, W3 = 1.78 W1 = 43, W2 = 43, W3 = 70 W = 1.1, L = 3.45 W = 43, L = 136 W = 2.03, L = 1.02 W = 80, L = 40 8 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 960 MHz (cont.) Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics W = 9.25, L = 9.65 W = 364, L = 380 W1 = 8, W2 = 8, W3 = 1.78 W1 = 315, W2 = 315, W3 = 70 W = 8, L = 14.2 W = 315, L = 559 W1 = 1.27, W2 = 1.27, W3 = 1.52 W1 = 50, W2 = 50, W3 = 60 W1 = 1.27, W2 = 1.27, W3 = 2.03 W1 = 50, W2 = 50, W3 = 80 0.009 , 9.74 W1 = 9.25, W2 = 9.25, W3 = 1.52 W1 = 364, W2 = 364, W3 = 60 0.007 , 47.12 W = 1.27, L = 1.4 W = 50, L = 55 W = 9.25, L = 5.21 W = 364, L = 205 W = 1.27, L = 14.05 W = 50, L = 553 W = 1.27, L = 0.38 W = 50, L = 15 W = 1.27, L = 11.2 W = 50, L = 441 W = 9.25, L = 9.65 W = 364, L = 380 Output TL201 TL202 TL203 TL204, TL243 TL205, TL214 TL206, TL213, TL217, TL219 TL207 TL209 TL210 TL211, TL232 TL212 TL215 TL216 TL218 TL221 TL222, TL223 TL224 TL225 TL226 TL231 TL233 TL234 TL235, TL236 TL237, TL239 TL240, TL241 TL242 TL245 Data Sheet 0.055 , 9.74 0.010 , 11.08 0.081 , 11.08 0.008 , 47.12 0.011 , 47.12 0.030 , 9.74 0.075 , 47.12 0.002 , 47.12 0.060 , 47.12 0.055 , 9.74 0.007 , 47.12 0.007 , 47.12 0.006 , 38.69 0.061 , 38.69 0.030 , 51.46 0.012 , 38.69 0.073 , 11.08 0.060 , 47.12 0.075 , 47.12 0.030 , 9.74 0.014 , 9.74 0.082 , 47.12 0.009 , 47.12 0.007 , 47.12 0.017 , 11.08 W = 1.27, L = 1.4 W = 50, L = 55 W1 = 1.27, W2 = 1.27, W3 = 1.27 W1 = 50, W2 = 50, W3 = 50 W = 1.7, L = 1.14 W = 67, L = 45 W = 1.7, L = 11.3 W = 67, L = 445 W = 1.1, L = 5.69 W = 43, L = 224 W = 1.7, L = 2.22 W = 67, L = 87 W = 8, L = 12.7 W = 315, L = 500 W = 1.27, L = 11.2 W = 50, L = 441 W = 1.27, L = 14.05 W = 50, L = 553 W = 9.25, L = 5.21 W = 364, L = 205 W1 = 9.25, W2 = 9.25, W3 = 2.36 W1 = 364, W2 = 364, W3 = 93 W = 1.27, L = 15.35 W = 50, L = 604 W1 = 1.27, W2 = 1.27, W3 = 1.78 W1 = 50, W2 = 50, W3 = 70 W1 = 1.27, W2 = 1.27, W3 = 1.27 W1 = 50, W2 = 50, W3 = 50 W = 8, L = 2.92 W = 315, L = 115 9 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Reference Circuit (cont.) VDD S3 C803 C802 R802 C805 R803 C207 + F 10 C801 VDD C103 R804 C101 C104 S1 C102 C205 C206 + C204 C804 10 F C203 R801 C105 R102 R101 R805 S2 C106 R103 PTFB090901EA RF_IN C108 C109 C216 C211 C214 C210 C201 C107 RF_OUT C215 F 10 + C209 C212 C208 C213 VDD + 10 F C202 PTFB090901_OUT_01 R04350, .020 (62) PTFB090901_IN_01 R04350, .020 (62) b 090901 ef a - v1 _C D _1- 27 - 2012 Reference circuit assembly diagram (not to scale) Component ID Description Suggested Supplier P/N Input C101 Chip capacitor, 33 pF ATC 100B330FW500XB C102 Chip capacitor, 10000 pF ATC 200B103MW C103 Chip capacitor, 4.7 pF ATC 100B4R7BW500XB C104 Chip capacitor, 4.7 F Digi-Key 493-2372-2-ND C105 Chip capacitor, 10000 pF ATC 200B103MW C106, C107 Chip capacitor, 4.8 pF ATC 100B4R8BW500XB C108 Chip capacitor, 1.5 pF ATC 100B1R5BW500XB C109 Chip capacitor, 8.2 pF ATC 100B8R2BW500XB C801, C804 Chip capacitor, 0.1 F Digi-Key PCC104BCT-ND C802, C803, C805 Chip capacitor, 1,000 pF Digi-Key PCC1772CT-ND R801 Resistor, 1.0k Digi-Key P1.0KECT-ND Digi-Key P1.3KECT-ND Digi-Key P1.2KECT-ND Digi-Key P10ECT-ND R802 R803 R804, R805 Resistor, 1.3k Resistor, 1.2k Resistor, 10 table cont. next page Data Sheet 10 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Reference Circuit (cont.) Component ID Description Suggested Supplier P/N S1 Transistor Digi-Key BCP5616TA-ND S2 Potentiometer, 2k Digi-Key 3224W-202ECT-ND S3 Voltage Regulator Digi-Key LM78L05ACM-ND C201 Chip capacitor, 1 pF ATC 100B0R9BW500XB C202, C207, C215, C216 Chip capacitor, 1.0 F ATC 281M5002106K C203 Chip capacitor, 100000 pF Digi-Key PCC104BCT-ND C204 Chip capacitor, 1000000 pF Digi-Key 478-3993-2-ND C205, C209 Capacitor, 10 F Digi-Key 587-1818-2-ND C206, C208 Chip capacitor, 33 pF ATC 100B330JW500XB C210, C211 Chip capacitor, 3 pF ATC 100B2R5BW500XB C212 Chip capacitor, 1000000 pF Digi-Key 478-3993-2-ND C213 Chip capacitor, 100000 pF Digi-Key PCC104BCT-ND C214 Chip capacitor, 33 pF ATC 100B330FW500XB Input (cont.) Output See next page for package outline Data Sheet 11 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Package Outline Specifications Package H-36265-2 45 X 2. 03 [.080] 6. ALL FOUR CORNERS 2X 7.11 [.280] 2.66. 51 [. 105.020] D S FLANGE 9.78 [.385] 3.05 [.120] LID 10.16. 25 [. 400. 010] C L G 2X R1.52 [R. 060] C L 4X R0.63 [R. 025] MAX SPH 1.57 [. 062] 15.49.51 [. 610.020] 4X R1.52 [R.060] 15.23 [.600] 10.16.25 [. 400.010] 3.61.38 [.142.015] h 1.02 [.040] - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 20.31 [.800] 6. Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D - drain, S - source, G - gate. 5. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]. Data Sheet 12 of 14 Rev. 04, 2012-02-23 PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37265-2 45 X 2.03 [.080] 2X 7.11 [.280] D FLANGE 10.16 [.400] 6. ALL FOUR CORNERS 2.66.51 [.105.020] LID 10.16.25 [.400.010] C L 15.49.51 [.610.020] G H- 37265 - 2_po _ 02- 18 - 2010 4X R0.63 [R.025] MAX C L 10.16.25 [.400.010] SPH 1.57 [.062] 3.61.38 [.142.015] 10.16 [.400] 1.02 [.040] S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D - drain, S - source, G - gate. 5. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. 6. Exposed metal plane on top of ceramic insulator. 7. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 13 of 14 Rev. 04, 2012-02-23 PTFB090901EA V1 / PTFB090901FA V1 Confidential, Limited Internal Distribution Revision History: Previous Version: Page all 2012-02-23 2010-11-05, Advance Specification Subjects (major changes since last revision) Products released to production: specifications finalized, circuit information added. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2012-02-23 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 14 of 14 Rev. 04, 2012-02-23