HEXFET® Power MOSFET
Notes through are on page 9
Features and Benefits
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features Benefits
Low R
DSon
(≤ 4.1mΩ) Lower Conduction Losses
Low Thermal Resistance to PCB (
≤
0.8°C/W)
Enables better thermal dissipation
100% Rg tested Increased Reliability
Low Profile (
≤
0.9 mm)
results in
Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
V
DS
60 V
R
DS(on) max
(@V
GS
= 10V)
4.1 mΩ
Q
g (typical)
69 nC
R
G (typical)
1.2 Ω
I
D
(@T
mb
= 25°C)
100
h
A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
mb
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
mb
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation
g
P
D
@ T
mb
= 25°C Power Dissipation
g
Linear Derating Factor
g
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
21
100
h
400
±20
60
17
100
h
-55 to + 150
3.6
0.029
156
IRFH5006PbF
Form
Quantity
IRFH5006PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5006TRPBF
Base part number Package Type
Standard Pack
Orderable part number
PQFN 5X6 mm
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IRFH5006PbF
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D
S
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.5 4.1
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -8.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 92 ––– ––– S
Q
g
Total Gate Charge ––– 69 104
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 12 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 6.8 –––
Q
gd
Gate-to-Drain Charge ––– 20 –––
Q
godr
Gate Charge Overdrive ––– 30.2 ––– See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 26.8 –––
Q
oss
Output Charge ––– 23 ––– nC
R
G
Gate Resistance ––– 1.2 –––
Ω
t
d(on)
Turn-On Delay Time ––– 9.6 –––
t
r
Rise Time ––– 13 –––
t
d(off)
Turn-Off Delay Time ––– 30 –––
t
f
Fall Time ––– 12 –––
C
iss
Input Capacitance ––– 4175 –––
C
oss
Output Capacitance ––– 550 –––
C
rss
Reverse Transfer Capacitance ––– 255 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
h
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 28 42 ns
Q
rr
Reverse Recovery Charge ––– 130 195 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
GS
= 10V
Typ.
–––
R
G
=1.8Ω
V
DS
= 25V, I
D
= 50A
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
mΩ
μA
I
D
= 50A
T
J
= 25°C, I
F
= 50A, V
DD
= 30V
di/dt = 500A/μs
e
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 20V
V
GS
= -20V
V
DS
= 60V, V
GS
= 0V
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 10V
I
D
= 50A
V
GS
= 0V
V
DS
= 30V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
e
pF
nC
Conditions
See Fig.15
Max.
285
50
ƒ = 1.0MHz
V
DS
= 30V
–––
V
DS
= V
GS
, I
D
= 150μA
A
100
––– ––– 400
––– –––
nA
ns
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC-mb
Junction-to-Mounting Base 0.5 0.8
R
θ
JC
(Top) Junction-to-Case
f
––– 15 °C/W
R
θ
JA
Junction-to-Ambient
g
––– 35
R
θ
JA
(<10s) Junction-to-Ambient
g
––– 22
IRFH5006PbF
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Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.8V
≤60μs PULSE WIDTH
Tj = 25°C
3.8V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
3.8V
≤60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.8V
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
VGS = 10V
234567
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 25V
≤60μs PULSE WIDTH
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 102030405060708090100
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 50A
IRFH5006PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th), Gate threshold Voltage (V)
ID = 150μA
ID = 500μA
ID = 1.0mA
ID = 1.0A
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
25 50 75 100 125 150
TC , Case Temperature (°C)
0
25
50
75
100
125
150
ID, Drain Current (A)
Limited By Package
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
DC
IRFH5006PbF
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Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
46810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
3
4
5
6
7
8
9
10
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 50A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 7.9A
14A
BOTTOM 50A
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 125°C and
Tstart =25°C (Single Pulse)
IRFH5006PbF
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Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
1K
VCC
DUT
0
L
s
IRFH5006PbF
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "G" Package Details
IRFH5006PbF
8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
PQFN 5x6 Tape and Reel
Bo
W
P1
Ao
Ko
CODE
TAPE DIMENSIONS
REEL DIMENSIONS
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Dimens i on des ign to accommodate the component width
Dimens i on des i gn to accommodate the component lenght
Dimens ion des ign to accommodate the component thicknes s
Pitch between s ucces s ive cavity centers
Over al l wi dth of the car r i er tape
DE S CR IP T ION
Type
Package
5 X 6 PQFN
Note: All dimens ion are nominal
Diameter
Reel QT Y
Width
Reel
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
Quadr ant
Pin 1
(Inch) W1
(mm)
13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
XXXX
XYWWX
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
MARKING CODE
(Per Marking Spec)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
DATE CODE
PIN 1
IDENTIFIER LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Part Marking
IRFH5006PbF
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Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.23mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test
capability.
MS L 1
(per JE DEC J-S T D-020D††† )
RoHS compliant Yes
PQFN 5mm x 6mm
Qualification information†
Moisture Sensitivity Level
Qualification level Industrial††
(per JE DEC JES D47F ††† guidelines )
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
•
Updated package outline for “option B” and added package outline for “option G” on page 7.
•
Updated tape and reel on page 8.
•
Updated package outline for “option G” on page 7.
•
Updated "IFX logo" on page 1 and page 9.
4/28/2015
5/19/2015
