SKM 145GB174DN www.DataSheet4U.com 5 ./ 6) Absolute Maximum Ratings Symbol Conditions IGBT 1)7 ) );< 17 (> 1 SEMITRANSTM 2N Low Loss IGBT Modules SKM 145GB174DN 5 ./ 9- 6) 5 , ?7;*? @ Typical Applications *) ( !( /0/ 0/- 1 *) 2) # ( 0/- ,.-- 12) # 3 $ $4 % Units ,0-,:- ,,- .-= . A- 444 B ,/- ,./ 1 * * 1 6) CA-- 1 ,A/ ,-- .-- * * 0.- * ,A/ ,-- .-- * * 0.- * *) , 4 & &;< 5 ./ 9- 6) 5 , &< 5 ,- D 4D > 5 ,/- 6) Freewheeling diode & &;< 5 ./ 9- 6) 5 , &< 5 ,- D 4D > 5 ,/- 6) 5 ./ 6) Characteristics Symbol Conditions IGBT ! " # $ % & ' % ( )* ! ! + ! ! ,- ! ! .- Values Inverse diode SKM 145GAL174DN Features % ! 17 )7 1)7? )7 17 5 1)7 ) 5 / * 17 5 - 1)7 5 1)7 > 5 ./ ,./ 6) > 5 ./ ,./ 6) 17 5 ,/ 1 > 5 ./ ,./ 6) 1)7 ) ) ) ) )7 ! % ! 17 5 - 1)7 5 ./ 1 % 5 , <"F ;))GB77G 4 5 ./ ,./ 6) ! ! % 1)) 5 ,.-- 1 ) 5 ,-- * ; 5 ; %% 5 ,/ E > 5 ,./ 6) 17 5 = ,/ 1 7 %% 5 ,-- * 17 5 ,/ 1 % ! min. typ. A/ // -, :/ -C 1 * 1 E . : C . C C C : 1 0 ,, -A 9/ ,/ -: ./ & & & " ( 7 %% max. Units - 0/ , E H9H-9- /- 0- I Inverse diode 1& 5 17) 1? ;;< J & 5 ,-- *D 17 5 - 1D > 5 ./ ,./ 6) > 5 ./ ,./ 6) > 5 ./ ,./ 6) & 5 ,-- *D > 5 ,./ 6) !K! 5 .A-- *KL 7 17 5 - 1 . . , H . 0 . A 1 ,C H ,:C. ,/ ,. 1 E * L) ,A I FWD 1& 5 17) 1? ;;< J & 5 ,-- *D 17 5 - 1 > 5 ./ ,./ 6) > 5 ./ ,./ 6) > 5 ./ ,./ 6) & 5 ,-- *D > 5 ,./ 6) !K! 5 .A-- *KL 7 17 5 - 1 . . , H ,C H ,:C. . 0 . A ,/ ,. ,A 1 1 E * L) I Thermal characteristics ;> ;>2 ;>&2 ( 2 ! &+2 - ,: -C -C MK+ MK+ MK+ ; ! - -/ MK+ / / ,:- Mechanical data GB 1 GAL < < N <: </ 14-09-2005 RAA C ./ (c) by SEMIKRON SKM 145GB174DN www.DataSheet4U.com Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-09-2005 RAA (c) by SEMIKRON SKM 145GB174DN www.DataSheet4U.com Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-09-2005 RAA (c) by SEMIKRON SKM 145GB174DN www.DataSheet4U.com Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm * ) 2 HC ) 2 HA O 2 HC ) 2 HC This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-09-2005 RAA (c) by SEMIKRON