2SK3594-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 200 170 45 180 30 45 258.9 20 5 2.02 270 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C *1 L=205H, Vcc=48V,Tc=25C, See to avalanche Energy Graph *2 Tch < =150C *3 IF< = BVDSS, Tch < = 150C *4 VDS < = -ID, -di/dt=50A/s, Vcc < = 200V *5 VGS=-30V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=30V VDS=0V ID=15A VGS=10V Typ. 200 3.0 5.0 25 250 100 66 Tch=25C Tch=125C ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 V CC=100V ID=30A VGS=10V L=205H Tch=25C IF=30A VGS=0V Tch=25C IF=30A VGS=0V -di/dt=100A/s Tch=25C Max. 10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 45 1.10 1.65 0.19 1.4 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.463 62.0 Units C/W C/W 1 2SK3594-01 FUJI POWER MOSFET Characteristics 300 Allowable Power Dissipation PD=f(Tc) 800 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V 700 IAS=18A 250 600 IAS=27A 200 IAS=45A EAS [mJ] PD [W] 500 150 400 300 100 200 50 100 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [C] Tc [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 120 20V 100 100 10V 8V 7.5V ID[A] ID [A] 80 7.0V 60 6.5V 40 10 1 6.0V 20 VGS=5.5V 0.1 0 0 2 4 6 8 10 0 12 1 2 3 4 5 6 7 8 9 10 VGS[V] VDS [V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 0.20 100 VGS= 6.0V 5.5V 0.15 gfs [S] RDS(on) [ ] 10 6.5V 7.0V 7.5V 8V 0.10 10V 20V 1 0.05 0.1 0.1 0.00 1 10 100 0 20 40 60 80 100 120 ID [A] ID [A] http://store.iiic.cc/ 2 2SK3594-01 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A 200 7.0 6.5 180 6.0 5.5 max. 5.0 140 VGS(th) [V] RDS(on) [ m ] 160 120 100 4.0 3.5 3.0 max. 80 4.5 min. 2.5 60 2.0 typ. 1.5 40 1.0 20 0.5 0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 Tch [C] 50 75 100 125 150 Tch [C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25C 10 1 14 12 Ciss 10 Vcc= 100V 8 0 C [nF] VGS [V] 10 Coss 6 10 -1 4 Crss 2 0 10 0 10 20 30 40 50 60 70 -2 80 10 -1 10 0 Qg [nC] 10 1 10 2 VDS [V] Typical Switching Characteristics vs. ID Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 10 100 3 t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 10 2 td(off) t [ns] IF [A] 10 10 1 0.1 0.00 td(on) 1 tr 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 -1 VSD [V] 10 0 10 1 10 2 ID [A] http://store.iiic.cc/ 3 2SK3594-01 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4