SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.055 ;I
D= -4.8A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
thatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•Low profile SOIC package
APPLICATIONS
•Motor drive
•Disconnect switches
DEVICE MARKING
ZXMP
6A18
ZXMP6A18DN8
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DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH QUANTITY
PER REEL
ZXMP6A18DN8TA 7’‘ 12mm 500 units
ZXMP6A18DN8TC 13’‘ 12mm 2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
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PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) RθJA 100 °C/W
Junction to Ambient (b)(e) RθJA 69 °C/W
Junction to Ambient (b)(d) RθJA 58 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGS ⫾20 V
Continuous Drain Current@VGS=10V; TA=25⬚C(b)(d)
@VGS=10V; TA=70⬚C(b)(d)
@VGS=10V; TA=25⬚C(a)(d)
ID-4.8
-3.8
-3.7
A
A
A
Pulsed Drain Current (c) IDM -23 A
Continuous Source Current (Body Diode)(b) IS-3.3 A
Pulsed Source Current (Body Diode)(c) ISM -23 A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor PD1.25
10 W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor PD1.8
14 W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor PD2.1
17 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -60 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1.0 ␮AV
DS=-60V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250␮A,
VDS=V
GS
Static Drain-Source On-State Resistance (1) RDS(on) 0.055
0.080 ⍀
⍀VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-2.9A
Forward Transconductance (1)(3) gfs 8.7 S VDS=-15V,ID=-3.5A
DYNAMIC (3)
Input Capacitance Ciss 1580 pF VDS=-30 V, VGS=0V,
f=1MHz
Output Capacitance Coss 160 pF
Reverse Transfer Capacitance Crss 140 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 4.6 ns
VDD =-30V, ID=-1A
RG≅6.0⍀,V
GS=-10V
Rise Time tr5.8 ns
Turn-Off Delay Time td(off) 55 ns
Fall Time tf23 ns
Gate Charge Qg23 nC VDS=-30V,VGS=-5V,
ID=-3.5A
Total Gate Charge Qg44 nC VDS=-30V,VGS=-10V,
ID=-3.5A
Gate-Source Charge Qgs 3.9 nC
Gate-Drain Charge Qgd 9.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -0.95 V TJ=25°C, IS=-4.2A,
VGS=0V
Reverse Recovery Time (3) trr 37 ns TJ=25°C, IF=-2.1A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 56 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
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Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A 1.35 1.75 0.053 0.069 e 1.27 BSC 0.050 BSC
A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020
D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010
H 5.80 6.20 0.228 0.244 ⍜0° 8° 0° 8°
E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020
PACKAGE DIMENSIONS