ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance SO8 * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * Motor drive * Disconnect switches ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP6A18DN8TA 7'` 12mm 500 units ZXMP6A18DN8TC 13'` 12mm 2500 units PINOUT DEVICE MARKING ZXMP 6A18 Top view ISSUE 1 - MAY 2005 1 ZXMP6A18DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -60 V Gate-Source Voltage V GS 20 V Continuous Drain Current@V GS =10V; T A =25C (b)(d) @V GS =10V; T A =70C (b)(d) @V GS =10V; T A =25C (a)(d) ID -4.8 -3.8 -3.7 A A A Pulsed Drain Current (c) I DM -23 A Continuous Source Current (Body Diode) (b) IS -3.3 A Pulsed Source Current (Body Diode) (c) I SM -23 A Power Dissipation at TA=25C (a)(d) Linear Derating Factor PD 1.25 10 W mW/C Power Dissipation at TA=25C (a)(e) Linear Derating Factor PD 1.8 14 W mW/C Power Dissipation at TA=25C (b)(d) Linear Derating Factor PD 2.1 17 W mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R JA 100 C/W Junction to Ambient (b)(e) R JA 69 C/W Junction to Ambient (b)(d) R JA 58 C/W Notes (a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. ISSUE 1 - MAY 2005 2 ZXMP6A18DN8 CHARACTERISTICS ISSUE 1 - MAY 2005 3 ZXMP6A18DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) g fs Input Capacitance TYP. MAX. UNIT CONDITIONS STATIC V I D =-250A, V GS =0V -1.0 A V DS =-60V, V GS =0V 100 nA V I =-250A, D V DS = V GS V GS =-10V, I D =-3.5A V GS =-4.5V, I D =-2.9A 8.7 S V DS =-15V,I D =-3.5A C iss 1580 pF Output Capacitance C oss 160 pF Reverse Transfer Capacitance C rss 140 pF Turn-On Delay Time t d(on) 4.6 ns Rise Time tr 5.8 ns Turn-Off Delay Time t d(off) 55 ns Fall Time tf 23 ns Gate Charge Qg 23 nC Total Gate Charge Qg 44 nC Gate-Source Charge Q gs 3.9 nC Gate-Drain Charge Q gd 9.8 nC V SD -0.85 DYNAMIC -1.0 V GS =20V, V DS =0V 0.055 0.080 (3) V DS =-30 V, V GS =0V, f=1MHz SWITCHING (2) (3) V DD =-30V, I D =-1A R G 6.0, V GS =-10V V DS =-30V,V GS =-5V, I D =-3.5A V DS =-30V,V GS =-10V, I D =-3.5A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) -0.95 V T J =25C, I S =-4.2A, V GS =0V T J =25C, I F =-2.1A, di/dt= 100A/s t rr 37 ns Q rr 56 nC NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MAY 2005 4 ZXMP6A18DN8 TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2005 5 ZXMP6A18DN8 TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2005 6 ZXMP6A18DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 0 8 0 8 E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 1.27 BSC Min Max 0.050 BSC (c) Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MAY 2005 7