FGH60T65SHD_F155 - ON SEMICONDUCTOR

Publication Order Number:

FGH60T65SHD-F155/D

September-2017, Rev. 2

FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT

Absolute Maximum Ratings

Symbol Description FGH60T65SHD-F155 Unit

VCES Collector to Emitter Voltage 650 V

VGES

Gate to Emitter Voltage  20 V

Transient Gate to Emitter Voltage  30 V

Collector Current @ TC = 25oC 120 A

Collector Current @ TC = 100oC 60 A

ILM (1) Pulsed Collector Current @ TC = 25oC 180 A

ICM (2) Pulsed Collector Current 180 A

Diode Forward Current @ TC = 25oC 60 A

Diode Forward Current @ TC = 100oC 30 A

IFM (2) Pulsed Diode Maximum Forward Current 180 A

Maximum Power Dissipation @ TC = 25oC 349 W

Maximum Power Dissipation @ TC = 100oC 174 W

TJ Operating Junction Temperature -55 to +175 oC

Tstg Storage Temperature Range -55 to +175 oC

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 oC

TC = 25°C unless otherwise noted

Notes:

1. VCC = 400 V, VGE = 15 V, IC =180 A, RG = 27  Inductive Load

2. Repetitive rating: Pulse width limited by max. junction temperature

FGH60T65SHD

650 V, 60 A Field Stop Trench IGBT

Features

• Maximum Junction Temperature : TJ =175oC

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A

• 100% of the Parts Tested for ILM(1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• RoHS Compliant

TO-247

long leads

General Description

Using novel field stop IGBT technology, ON Semiconductor's

new series of field stop 3rd generation IGBTs offer the

optimum performance for solar inverter, UPS, welder, telecom,

ESS and PFC applica-tions where low conduction and

switching losses are essential.

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT

Thermal Characteristics

Symbol Parameter FGH60T65SHD-F155 Unit

RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.43 oC/W

RJC(Diode) Thermal Resistance, Junction to Case, Max. 1.25 oC/W

RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantit

FGH60T65SHD-F155 FGH60T65SHD TO-247 G03 Tube - - 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA 650 - - V

BVCES /

TJ

Temperature Coefficient of Breakdown

Voltage IC = 1 mA, Reference to 25oC- 0.6 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A

IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 60 mA, VCE = VGE 4.0 5.5 7.5 V

VCE(sat) Collector to Emitter Saturation Voltage

IC = 60 A, VGE = 15 V - 1.6 2.1 V

IC = 60 A, VGE = 15 V,

TC = 175oC- 2.14 - V

Dynamic Characteristics

Cies Input Capacitance

VCE = 30 V, VGE = 0 V,

f = 1MHz

- 2980 - pF

Coes Output Capacitance - 110 - pF

Cres Reverse Transfer Capacitance - 36 - pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 400 V, IC = 60 A,

RG = 6 , VGE = 15 V,

Inductive Load, TC = 25oC

- 26 - ns

trRise Time - 48 - ns

td(off) Turn-Off Delay Time - 87 - ns

tfFall Time - 47 - ns

Eon Turn-On Switching Loss - 1.69 - mJ

Eoff Turn-Off Switching Loss - 0.63 - mJ

Ets Total Switching Loss - 2.32 - mJ

td(on) Turn-On Delay Time

VCC = 400 V, IC = 60 A,

RG = 6 , VGE = 15 V,

Inductive Load, TC = 175oC

- 25 - ns

trRise Time - 60 - ns

td(off) Turn-Off Delay Time - 93 - ns

tfFall Time - 72 - ns

Eon Turn-On Switching Loss - 2.54 - mJ

Eoff Turn-Off Switching Loss - 1.04 - mJ

Ets Total Switching Loss - 3.58 - mJ

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FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT

Electrical Characteristics of the IGBT (Continued)

Symbol Parameter Test Conditions Min. Typ. Max Unit

QgTotal Gate Charge

VCE = 400 V, IC = 60 A,

VGE = 15 V

- 102 - nC

Qge Gate to Emitter Charge - 18.4 - nC

Qgc Gate to Collector Charge - 37.5 - nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

VFM Diode Forward Voltage IF = 30 A TC = 25oC - 2.3 2.7 V

TC = 175oC - 1.9 -

Erec Reverse Recovery Energy

IF =30 A, dIF/dt = 200 A/s

TC = 175oC - 50 - uJ

trr Diode Reverse Recovery Time TC = 25oC - 34.6 - ns

TC = 175oC - 197 -

Qrr Diode Reverse Recovery Charge TC = 25oC - 58.6 - nC

TC = 175oC - 810 -

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FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case

Characteristics Temperature at Variant Current Level

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

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FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT

Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.

Gate Resistance Gate Resistance

Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.

Gate Resistance Collector Current

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FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT

Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.

Collector Current Collector Current

Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

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FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT

Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

Figure 21.Transient Thermal Impedance of IGBT

Figure 22.Transient Thermal Impedance of Diode

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