ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92549m-AAS /A1
0.26
20.32
19.32
3.35
4.0
3.0
0.5 13°
Max
7.0
6.0
2.54
1.2
0.5
3.0
1.2
3.0
3.35
7.0
6.0
0.5
0.5
7.62
0.26
13°
Max
2.54
TLP626
3.0
10.16
9.16 4.0
3.0
3.35
0.5
7.0
6.0
7.62
1.2
13°
Max
0.5 0.26
2.54
Dimensions in mm
LOW INPUT CURRENT A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
1
2
3
7
8
16
15
10
4 13
11
12
14
9
6
5
4
8
7
6
2
1
35
4
3
1
2
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The TLP626, TLP626-2, TLP626-4 series of
optically coupled isolators consist of two infrared
light emitting diodes connected in inverse parallel
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lLow input current ± 0.5mA IF
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lAC or polarity insensitive input
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lTelephone sets, Telephone exchangers
lSignal transmission between systems of
different potentials and impedances
5.08
4.084.0
3.0
7.62
TLP626, TLP626-2,TLP626-4
TLP626-2
TLP626-4
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
10.46
9.86
0.6
0.1 1.25
0.75
DB92549m-AAS/A1
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.0 1.15 1.3 VIF = ± 10mA
Output Collector-emitter Breakdown (BVCEO)55 VIC = 0.5mA
( Note 2 )
Emitter-collector Breakdown (BVECO)6VIE = 100µA
Collector-emitter Dark Current (ICEO)100 nA VCE = 24V
Coupled Current Transfer Ratio (CTR) (Note 2) 100 1200 %± 1mAIF , 0.5V VCE
Low Input CTR 50 %± 0.5mAIF,1.5V VCE
Collector-emitter Saturation VoltageVCE (SAT) 0.4 V± 1mAIF , 0.5mAIC
0.2 V± 1mAIF , 1mAIC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Rise Time tr 8µsVCC = 10V ,
Fall Time tf 8µs IC= 2mA, RL= 100Ω
Turn-on Time ton 10 µs
Turn-off Time toff 8µs
7/12/00
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ± 50mA
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 55V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
DB92549m-AAS/A1
7/12/00
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation P C (mW)
60
30
20
10
0
40
50
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
Ambient temperature TA ( °C )
100
0
0.5
1.0
1.5 IF = ±1mA
VCE = 0.5V
Forward current I F (±mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100 125
-30 0 25 50 75 100 125
-30 0 25 50 75 100
Ambient temperature TA ( °C )
0
0.5
1.0
1.5
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
IF = ± 0.5mA
VCE = 1.5V
0
1.2
1.6
2.0
2.4
2.8
VCE = 0.5V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (±mA)
0.8
0.4
0.1 0.2 0.5 1.0 2 5
0
0.8
1.2
1.6
2.0
2.4
0.4
2.8
VCE = 1.5V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (±mA)
0.1 0.2 0.5 1.0 2 5
