HMC1016 v00.1111 Amplifiers - Linear & Power - Chip GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Typical Applications Features TheHMC1016 is ideal for: P1dB Output Power: +24 dBm * Point-to-Point Radios Psat Output Power: +26 dBm * Point-to-Multi-Point Radios High Gain: 22 dB * VSAT & SATCOM Output IP3: +34 dBm * Military & Space Supply Voltage: Vdd = +6V @ 250 mA 50 Ohm Matched Input/Output Die Size: 0.90 x 2.22 x 0.1 mm Functional Diagram General Description The HMC1016 is a four stage GaAs PHEMT MMIC Medium Power Amplifier die which operates between 34 and 46.5 GHz. The amplifier provides 22 dB of gain, +26 dBm of saturated output power, and 17% PAE from a +6V supply. With up to +37 dBm IP3 the HMC1016 is ideal for high linearity applications in miltary and space as well as point-to-point and point-to-multi-point radios. The HMC1016 amplifier I/Os are internally matched facilitating integration into mutli-chip-modules (MCMs). All data shown herein was measured with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25 C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 250 mA [1] Parameter Min. Frequency Range Max. Min. 34 - 40 Gain 19 Gain Variation Over Temperature Input Return Loss Output Return Loss 22 21 Saturated Output Power (Psat) [2] Total Supply Current Typ. 40 - 46.5 20 Max. Units GHz 23 dB 0.028 0.038 dB/ C 13 18 dB 11 Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Typ. 12 dB 24 dBm 26 26 dBm 34 34 dBm 250 250 mA 24 21 [1] Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical. [2] Measurement taken at Pout / tone = +14 dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Gain & Return Loss Gain vs. Temperature 26 10 GAIN (dB) RESPONSE (dB) 20 S21 S11 S22 0 18 -10 +25C +85C -55C 14 -20 10 -30 33 35 37 39 41 43 FREQUENCY (GHz) 45 47 49 33 35 37 41 43 45 47 49 Output Return Loss vs. Temperature 0 0 +25C +85C -55C +25C +85C -55C -5 RETURN LOSS (dB) -5 -10 -15 -20 -10 -15 -20 -25 -30 -25 33 35 37 39 41 43 45 47 49 33 35 37 FREQUENCY (GHz) 39 41 43 45 47 49 FREQUENCY (GHz) P1dB vs. Temperature P1dB vs Supply Voltage 30 30 +25C +85C -55C 28 26 28 5V 5.5V 6V 26 24 P1dB (dBm) P1dB (dBm) 39 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 22 Amplifiers - Linear & Power - Chip 30 30 22 20 24 22 20 18 18 16 16 14 14 33 35 37 39 41 FREQUENCY (GHz) 43 45 47 33 35 37 39 41 43 45 47 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz 30 28 28 26 26 24 24 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 30 22 20 +25C +85C -55C 18 20 5.0V 5.5V 6.0V 16 14 14 33 35 37 39 41 43 45 47 33 35 37 FREQUENCY (GHz) 30 28 28 26 26 24 24 Psat (dBm) 30 22 20 200 mA 225 mA 250 mA 43 45 47 43 45 47 45 46 47 22 200 mA 225 mA 250 mA 20 18 16 16 14 14 33 35 37 39 41 43 45 47 33 35 FREQUENCY (GHz) 39 41 Output IP3 vs. Supply Current, Pout/tone = +14 dBm 40 40 35 35 30 +25C +85C -55C 25 37 FREQUENCY (GHz) IP3 (dBm) IP3 (dBm) 41 Psat vs. Supply Current P1dB vs. Supply Current 18 39 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/tone = +14 dBm 30 200 mA 225 mA 250 mA 25 20 20 34 35 36 37 38 39 40 41 42 43 44 FREQUENCY (GHz) 3 22 18 16 P1dB (dBm) Amplifiers - Linear & Power - Chip Psat vs. Temperature 45 46 47 34 35 36 37 38 39 40 41 42 43 44 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Output IP3 vs. Supply Voltage, Pout/tone = +14 dBm Output IM3 @ Vdd = +5V 40 50 35 IM3 (dBc) IP3 (dBm) 40 30 5V 5.5V 6V 30 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 45 GHz 20 25 10 0 20 34 35 36 37 38 39 40 41 42 43 44 45 46 6 47 8 10 60 50 50 40 40 30 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 45 GHz 10 16 18 20 16 18 20 30 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 45 GHz 20 10 0 0 6 8 10 12 14 16 18 20 6 8 10 Pout/TONE (dBm) 14 Reverse Isolation vs. Temperature 35 0 Pout Gain PAE 30 -10 ISOLATION (dB) 25 20 15 10 +25C +85C -55C -20 -30 -40 -50 5 0 -10 12 Pout/TONE (dBm) Power Compression @ 40 GHz Pout (dBm), GAIN (dB), PAE (%) 14 Output IM3 @ Vdd = +6V 60 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd =+5.5V 20 12 Pout/TONE (dBm) FREQUENCY (GHz) Amplifiers - Linear & Power - Chip 60 -60 -7 -4 -1 2 INPUT POWER (dBm) 5 8 33 35 37 39 41 43 45 47 49 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Gain & Power vs. Supply Current @ 40 GHz Gain & Power vs. Supply Voltage @ 40 GHz 30 Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 27 24 21 GAIN (dB) P1dB (dBm) Psat (dBm) 18 15 200 220 230 240 24 21 GAIN (dB) P1dB (dBm) Psat (dBm) 18 250 5 5.2 5.4 Idd (mA) 5.6 5.8 6 Vdd (V) Power Dissipation 3 34 GHz 36 GHz 38 GHz 40 GHz 42 GHz 45 GHz 2.5 2 1.5 1 0.5 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) 5 27 15 210 POWER DISSIPATION (W) Amplifiers - Linear & Power - Chip 30 +7 Vdc Gate Bias Voltage (Vgg) -3 to 0 Vdc RF Input Power (RFIN) +15 dBm Channel Temperature 150 C Continuous Pdiss (T= 85 C) (derate 24 mW/C above 85 C) 1.57 W Thermal Resistance (channel to die bottom) 41.3 C/W Storage Temperature -65 to 150C Operating Temperature -55 to 85 C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +5 250 +5.5 250 +6 250 Adjust Vgg1 to achieve Idd = 250 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] For more information refer to the "Packaging Information" Document in the Product Support Section of our website. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS 0.004" 3. TYPICAL BOND PAD IS 0.004" SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE 0.002" For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Linear & Power - Chip Outline Drawing 6 HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Amplifiers - Linear & Power - Chip Pad Descriptions 7 Pad Number Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. 2 Vgg Gate control for PA. Adjust Vgg to achieve recommendedbias current. External bypass capacitors 100 pF, 10 nF, and 4.7 F are required. 3 RFOUT This pad is AC coupled and matched to 50 Ohms. 4, 5 Vdd1, Vdd2 Drain bias voltage. External bypass capacitors of 100pF, 10 nF, and 4.7uF are required for each pad. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Linear & Power - Chip Assembly Diagram 8 HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Amplifiers - Linear & Power - Chip Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1016 v00_1111 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz Amplifiers - Linear & Power - Chip Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 10