DATA SH EET
Product specification
Supersedes data of 2002 May 17 2002 Oct 02
INTEGRATED CIRCUITS
74LVC1G08
Single 2-input AND gate
2002 Oct 02 2
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
FEATURES
Wide supply voltage range from 1.65 to 5.5 V
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 to 1.95 V)
JESD8-5 (2.3 to 2.7 V)
JESD8B/JESD36 (2.7 to 3.6 V).
•±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
Specified from 40 to +125 °C.
DESCRIPTION
The 74LVC1G08 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
Input can be driven from either 3.3 or 5 V devices. These
features allow the use of these devices in a mixed
3.3 and 5 V environment.
Schmitttriggeractionatallinputsmakesthecircuittolerant
for slower input rise and fall time.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC1G08 provides the single 2-input AND function.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25°C; tr=t
f2.5 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PDin µW).
PD=C
PD ×VCC2×fi+(C
L×V
CC2×fo) where:
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI= GND to VCC.
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
tPHL/tPLH propagation delay
inputs A, B to output Y VCC = 1.8 V; CL= 30 pF; RL=1k3.4 ns
VCC = 2.5 V; CL= 30 pF; RL= 500 2.2 ns
VCC = 2.7 V; CL= 50 pF; RL= 500 2.5 ns
VCC = 3.3 V; CL= 50 pF; RL= 500 2.1 ns
VCC = 5.0 V; CL= 50 pF; RL= 500 1.7 ns
CIinput capacitance 5 pF
CPD power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 16 pF
2002 Oct 02 3
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PINNING
INPUT OUTPUT
ABY
LLL
LHL
HLL
HHH
TYPE NUMBER PACKAGE
TEMPERATURE
RANGE PINS PACKAGE MATERIAL CODE MARKING
74LVC1G08GW 40 to +125 °C 5 SC-88A plastic SOT353 VE
74LVC1G08GV 40 to +125 °C 5 SC-74A plastic SOT753 V08
PIN SYMBOL DESCRIPTION
1 B data input B
2 A data input A
3 GND ground (0 V)
4 Y data output Y
5V
CC supply voltage
handbook, halfpage
1
2
3
5
4
MNA112
08
VCC
A
Y
GND
B
Fig.1 Pin configuration.
handbook, halfpage
MNA113
B
AY
2
14
Fig.2 Logic symbol.
2002 Oct 02 4
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
handbook, halfpage
MNA114
24
&
1
Fig.3 IEE/IEC logic symbol.
handbook, halfpage
MNA221
A
B
Y
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage 1.65 5.5 V
VIinput voltage 0 5.5 V
VOoutput voltage active mode 0 VCC V
VCC = 0 V; Power-down mode 0 5.5 V
Tamb operating ambient temperature 40 +125 °C
tr, tfinput rise and fall times VCC = 1.65 to 2.7 V 0 20 ns/V
VCC = 2.7 to 5.5 V 0 10 ns/V
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage 0.5 +6.5 V
IIK input diode current VI<0 −−50 mA
VIinput voltage note 1 0.5 +6.5 V
IOK output diode current VO>V
CC or VO<0 −±50 mA
VOoutput voltage active mode; notes 1 and 2 0.5 VCC + 0.5 V
Power-down mode; notes 1 and 2 0.5 +6.5 V
IOoutput source or sink current VO=0toV
CC −±50 mA
ICC, IGND VCC or GND current −±100 mA
Tstg storage temperature 65 +150 °C
PDpower dissipation per package for temperature range from
40 to +125 °C250 mW
2002 Oct 02 5
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP.(1) MAX. UNIT
OTHER VCC (V)
Temperature range 40 to +85 °C
VIH HIGH-level input
voltage 1.65 to 1.95 0.65 ×VCC −−V
2.3 to 2.7 1.7 −−V
2.7 to 3.6 2.0 −−V
4.5 to 5.5 0.7 ×VCC −−V
V
IL LOW-level input
voltage 1.65 to 1.95 −−0.35 ×VCC V
2.3 to 2.7 −−0.7 V
2.7 to 3.6 −−0.8 V
4.5 to 5.5 −−0.3 ×VCC V
VOL LOW-level output
voltage VI=V
IH or VIL
IO= 100 µA 1.65 to 5.5 −−0.1 V
IO= 4 mA 1.65 −−0.45 V
IO= 8 mA 2.3 −−0.3 V
IO= 12 mA 2.7 −−0.4 V
IO= 24 mA 3.0 −−0.55 V
IO= 32 mA 4.5 −−0.55 V
VOH HIGH-level output
voltage VI=V
IH or VIL
IO=100 µA 1.65 to 5.5 VCC 0.1 −−V
I
O
=4 mA 1.65 1.2 −−V
I
O
=8 mA 2.3 1.9 −−V
I
O
=12 mA 2.7 2.2 −−V
I
O
=24 mA 3.0 2.3 −−V
I
O
=32 mA 4.5 3.8 −−V
I
LI input leakage
current VI= 5.5 Vor GND 5.5 −±0.1 ±5µA
Ioff powerOFFleakage
current VIor VO= 5.5 V 0 −±0.1 ±10 µA
ICC quiescent supply
current VI=V
CC or GND;
IO=0 5.5 0.1 10 µA
ICC additionalquiescent
supply current per
pin
VI=V
CC 0.6 V;
IO=0 2.3 to 5.5 5 500 µA
2002 Oct 02 6
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
Note
1. All typical values are measured at VCC = 3.3 V and Tamb =25°C.
Temperature range 40 to +125 °C
VIH HIGH-level input
voltage 1.65 to 1.95 0.65 ×VCC −−V
2.3 to 2.7 1.7 −−V
2.7 to 3.6 2.0 −−V
4.5 to 5.5 0.7 ×VCC −−V
V
IL LOW-level input
voltage 1.65 to 1.95 −−0.35 ×VCC V
2.3 to 2.7 −−0.7 V
2.7 to 3.6 −−0.8 V
4.5 to 5.5 −−0.3 ×VCC V
VOL LOW-level output
voltage VI=V
IH or VIL
IO= 100 µA 1.65 to 5.5 −−0.1 V
IO= 4 mA 1.65 −−0.70 V
IO= 8 mA 2.3 −−0.45 V
IO= 12 mA 2.7 −−0.60 V
IO= 24 mA 3.0 −−0.80 V
IO= 32 mA 4.5 −−0.80 V
VOH HIGH-level output
voltage VI=V
IH or VIL
IO=100 µA 1.65 to 5.5 VCC 0.1 −−V
I
O
=4 mA 1.65 0.95 −−V
I
O
=8 mA 2.3 1.7 −−V
I
O
=12 mA 2.7 1.9 −−V
I
O
=24 mA 3.0 2.0 −−V
I
O
=32 mA 4.5 3.4 −−V
I
LI input leakage
current VI= 5.5 Vor GND 5.5 −−±100 µA
Ioff powerOFFleakage
current VIor VO= 5.5 V 0 −−±200 µA
ICC quiescent supply
current VI=V
CC or GND;
IO=0 5.5 −−200 µA
ICC additionalquiescent
supply current per
pin
VI=V
CC 0.6 V;
IO=0 2.3 to 5.5 −−5000 µA
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP.(1) MAX. UNIT
OTHER VCC (V)
2002 Oct 02 7
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
AC CHARACTERISTICS
GND = 0 V; tr=t
f2.0 ns.
AC WAVEFORMS
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Temperature range 40 to +85 °C
tPHL/tPLH propagation delay
A, B to Y see Figs 5 and 6 1.65 to 1.95 1.0 3.4 8.0 ns
2.3 to 2.7 0.5 2.2 5.5 ns
2.7 0.5 2.5 5.5 ns
3.0 to 3.6 0.5 2.1 4.5 ns
4.5 to 5.5 0.5 1.7 4.0 ns
Temperature range 40 to +125 °C
tPHL/tPLH propagation delay
A, B to Y see Figs 5 and 6 1.65 to 1.95 1.0 10.5 ns
2.3 to 2.7 0.5 7.0 ns
2.7 0.5 7.0 ns
3.0 to 3.6 0.5 6.0 ns
4.5 to 5.5 0.5 5.5 ns
handbook, halfpage
MNA614
tPHL tPLH
VM
VM
A, B input
Y output
GND
VI
VOH
VOL
Fig.5 Input A, B to output Y propagation delay times.
VCC VMINPUT
VItr=t
f
1.65 to 1.95 V 0.5 ×VCC VCC 2.0 ns
2.3 to 2.7 V 0.5 ×VCC VCC 2.0 ns
2.7 V 1.5 V 2.7 V 2.5 ns
3.0 to 3.6 V 1.5 V 2.7 V 2.5 ns
4.5 to 5.5 V 0.5 ×VCC VCC 2.5 ns
VOL and VOH are typical output voltage drop that occur with the output load.
2002 Oct 02 8
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
handbook, full pagewidth
VEXT
VCC
VIVO
MNA616
D.U.T.
CL
RT
RL
RL
PULSE
GENERATOR
Fig.6 Load circuitry for switching times.
VCC VICLRLVEXT
tPLH/tPHL tPZH/tPHZ tPZL/tPLZ
1.65 to 1.95 V VCC 30 pF 1 kopen GND 2 ×VCC
2.3 to 2.7 V VCC 30 pF 500 open GND 2 ×VCC
2.7 V 2.7 V 50 pF 500 open GND 6 V
3.0 to 3.6 V 2.7 V 50 pF 500 open GND 6 V
4.5 to 5.5 V VCC 50 pF 500 open GND 2 ×VCC
Definitions for test circuit:
RL= Load resistor.
CL= Load capacitance including jig and probe capacitance.
RT= Termination resistance should be equal to the output impedance Zo of the pulse generator.
2002 Oct 02 9
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
PACKAGE OUTLINES
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT353
wB
M
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
HE
E
v
M
A
AB
y
0 1 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT353
UNIT A1
max bpcD
E
(2)
e
1
HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28SC-88A
2002 Oct 02 10
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT753 SC-74A
wBM
b
p
D
e
A
A
1
L
p
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT753
UNIT A1bpcDEH
E
L
p
Qywv
mm 0.100
0.013 0.40
0.25 3.1
2.7
0.26
0.10 1.7
1.3
e
0.95 3.0
2.5 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2 0.33
0.23
A
1.1
0.9
02-04-16
2002 Oct 02 11
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
SOLDERING
Introduction to soldering surface mount packages
Thistextgives a verybriefinsight to acomplextechnology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certainsurfacemountICs,but itisnotsuitablefor fine pitch
SMDs. In these situations reflow soldering is
recommended.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuitboard byscreen printing, stencillingor
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Wave soldering
Conventional single wave soldering is not recommended
forsurfacemountdevices (SMDs) orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Forpackageswithleadson foursides,thefootprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2002 Oct 02 12
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. Formore detailed informationon theBGA packagesrefer to the
“(LF)BGAApplication Note
(AN01026); order acopy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE(1) SOLDERING METHOD
WAVE REFLOW(2)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,
HVSON, SMS not suitable(3) suitable
PLCC(4), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(4)(5) suitable
SSOP, TSSOP, VSO not recommended(6) suitable
2002 Oct 02 13
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor atanyother conditionsabovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2002 Oct 02 14
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
NOTES
2002 Oct 02 15
Philips Semiconductors Product specification
Single 2-input AND gate 74LVC1G08
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
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Printed in The Netherlands 613508/04/pp16 Date of release: 2002 Oct 02 Document order number: 9397 750 10068